Fairchild Semiconductor CNY17-3, CNY17-2-M, CNY17-2, CNY17-1-M, CNY17-4 Datasheet

DESCRIPTION

The CNY17 series consists of a Gallium Arsenide IRED
coupled with an NPN phototransistor.

CNY17-1 CNY17-3
CNY17-2 CNY17-4

APPLICATIONS

• Power supply regulators • Digital logic inputs

• Microprocessor inputs • Appliance sensor systems

• Industrial controls

FEATURES

• CNY17-1/2/3 are also available in white package by specifying -M suffix (eg. CNY17-2-M)

• UL recognized (File # E90700)

• VDE recognized

-102497 for white package -Add option V for white package (e.g., CNY17-2V-M)

-File #102497 -Add option ‘300’ for black package (e.g., CNY17-2.300)

-File #94766

• Current transfer ratio in select groups

• High BV

CEO

70V minimum

SCHEMATIC

Parameters Symbol Device Value Units

TOTAL DEVICE

T

STG

All -55 to +150 °C

Storage Temperature
Operating Temperature T

OPR

All -55 to +100 °C

Lead Solder Temperature T

SOL

All 260 for 10 sec °C

Total Device Power Dissipation @ 25°C (LED plus detector)

-M

250

mW

non -M 260

Derate Linearly From 25°C P

D

-M 2.94
mW/°C

non -M 3.50

EMITTER

I

F

-M 60

mA

Continuous Forward Current

non -M 90

Reverse Voltage V

R

All 6 V

Forward Current - Peak (1 µs pulse, 300 pps) IF(pk)

-M 1.5

A

non -M 3.0

LED Power Dissipation 25°C Ambient

-M

120

mW

Derate Linearly From 25°C P

D

non -M 135

-M

1.41
mW/°C

non -M

1.8

DETECTOR

-M

150

mW

Detector Power Dissipation @ 25°C

P

D

non -M

200

Derate Linearly from 25°C

-M

1.76
mW/°C

non -M 2.67



2001 Fairchild Semiconductor Corporation

DS300208 6/06/01 1 OF 11 www.fairchildsemi.com

WHITE PACKAGE (-M SUFFIX)

BLACK PACKAGE (NO -M SUFFIX)

6

1

6

6

1

1

6

1

6

1

6

1

PHOTOTRANSISTOR OPTOCOUPLERS

ANODE

CATHODE

1

2

3

6

5 COL

4 EMITTER

BASE

Parameters Test Conditions Symbol Device Min Typ Max Units

EMITTER

I

F

= 60 mA -M 1.35 1.65

V

Input Forward Voltage I

F

= 10 mA

V

F

non -M 1.15 1.50

Capacitance VF= 0 V, f = 1.0 MHz C

J

non -M

50

pF

-M

18

Reverse Leakage Current VR= 6 V

I

R

All 0.001 10 µA

DETECTOR

Breakdown Voltage

Collector to Emitter

I

C

= 1.0 mA, IF= 0 BV

CEO

All 70

100

V

Collector to Base IC= 10 µA, IF= 0 BV

CBO

All 70 120 V

Emitter to Collector IE= 100 µA, IF= 0 BV

ECO

All 7 10 V

Leakage Current

Collector to Emitter

V

CE

= 10 V, IF= 0 I

CEO

All 1 50 nA

Collector to Base

V

CB

= 10 V, IF= 0 I

CBO

All 20

nA

Capacitance

pF

Collector to Emitter

V

CE

= 0, f = 1 MHz C

CE

All 8

Collector to Base

V

CB

= 0, f = 1 MHz

C

CB

All 20

pF

Emitter to Base

V

EB

= 0, f = 1 MHz

C

EB

All 10 pF

INDIVIDUAL COMPONENT CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

(TA= 25°CUnless otherwise specified.)

www.fairchildsemi.com 2 OF 11 6/06/01 DS300208

PHOTOTRANSISTOR OPTOCOUPLERS

CNY17-1 CNY17-3
CNY17-2 CNY17-4

Characteristic Test Conditions Symbol Device Min Typ** Max Units

Input-Output Isolation Voltage f = 60 Hz, t = 1 min. V

ISO

Black Package

5300 Vac(rms)*

‘-M’ White Package

7500 Vac(pk)

Isolation Resistance V

I-O

= 500 VDC R

ISO

All 10

11

!

Isolation Capacitance V

I-O

= ", f = 1 MHz C

ISO

Black Package

0.5
pF

‘-M’ White Package

0.2

ISOLATION CHARACTERISTICS

Note
* 5300 Vac(rms) for 1 minute equates to approximately 9000 Vac (pk) for 1 second
** Typical values at T

A

= 25°C

DC Characteristics Test Conditions Symbol Device Min Typ Max Units

CNY17-1/-1-M 40 80

Current Transfer Ratio,

I

F

= 10 mA, VCE= 5 V CTR

CNY17-2/-2-M 63 125

%

Collector to Emitter CNY17-3/-3-M 100 200

CNY17-4 160 320

Saturation Voltage

I

F

= 10 mA, IC= 2.5 mA

V

CE(SAT)

All .40 V

AC Characteristics Test Conditions Symbol Device Min Typ Max Units

Non-Saturated Switching Times

Turn-On Time (Fig.19 and Fig.20)

RL= 100 Ω, IC= 2 mA, VCC= 10 V t

on

non -M 10 µs

Turn-Off Time (Fig.19 and Fig.20) R

L

= 100 Ω, IC= 2 mA, VCC= 10 V

t

off

non -M 10 µs

Delay Time (Fig.19 and Fig.20)

I

F

= 10 mA, VCC= 5 V ,

R

L

= 75 Ω

t

d

-M 5.6

µs

Rise Time (Fig.19 and Fig.20)

I

F

= 10 mA, VCC= 5 V ,

R

L

= 75 Ω

t

r

-M 4.0

µs

Storage Time (Fig.19 and Fig.20)

I

F

= 10 mA, VCC= 5 V ,

R

L

= 75 Ω

t

s

-M 4.1

µs

Fall Time (Fig.19 and Fig.20)

I

F

= 10 mA, VCC= 5 V ,

R

L

= 75 Ω

t

f

-M 3.5

µs

Saturated Switching Times IF= 20 mA, VCE= 0.4 V

CNY17-1 5.5

Turn-On Time (Fig.19 and Fig.20)

I

F

= 10 mA, VCE= 0.4 V

t

on

CNY17-2, CNY17-3,

8.0

µs

CNY17-4

IF= 20 mA, VCE= 0.4 V

CNY17-1 4.0

I

F

= 10 mA, VCE= 0.4 V

CNY17-2, CNY17-3,

6.0

Rise-Time (Fig.19 and Fig.20)

CNY17-4

µs

I

F

= 20 mA, VCC= 5 V ,

R

L

= 1 KΩ

t

r

CNY17-1-M 4.0

I

F

= 10 mA, V

CC

= 5 V , RL= 1 KΩ CNY17-2-M,CNY17-3-M 6.0

Delay Time (Fig.19 and Fig.20)

I

F

= 20 mA, VCC= 5 V ,

R

L

=1 KΩ

t

d

CNY17-1-M

5.5
µs

I

F

= 10 mA, VCC= 5 V ,

R

L

=1 KΩ

CNY17-2, CNY17-3

8.0

IF= 20 mA, VCE= 0.4 V

CNY17-1 34.0

Turn-Off Time (Fig.19 and Fig.20)

I

F

= 10 mA, VCE= 0.4 V

t

off

CNY17-2, CNY17-3,

39.0

µs

CNY17-4

IF= 20 mA, VCE= 0.4 V

CNY17-1 20.0

I

F

= 10 mA, VCE= 0.4 V

CNY17-2, CNY17-3,

24.0

Fall-Time (Fig.19 and Fig.20) t

f

CNY17-4

µs

I

F

= 20 mA, VCC= 5 V ,

R

L

=1 KΩ

CNY17-1-M 20.0

I

F

= 10 mA, VCC= 5 V , RL= 1 KΩ

CNY17-2-M,CNY17-3-M

24.0

Storage Time (Fig.19 and Fig.20)

I

F

= 20 mA, VCC= 5 V ,

R

L

=1 KΩ

t

s

CNY17-1-M

34.0
µs

I

F

= 10 mA, VCC= 5 V ,

R

L

=1 KΩ

CNY17-2-M,CNY17-3-M

39.0

TRANSFER CHARACTERISTICS

(TA= 25°C Unless otherwise specified.)

PHOTOTRANSISTOR OPTOCOUPLERS

CNY17-1 CNY17-3
CNY17-2 CNY17-4

DS300208 6/06/01 3 OF 11 www.fairchildsemi.com

PHOTOTRANSISTOR OPTOCOUPLERS

CNY17-1 CNY17-3
CNY17-2 CNY17-4

www.fairchildsemi.com 4 OF 11 6/06/01 DS300208

Fig.1 Normalized CTR vs. Forward Current

1.4
VCE = 5.0V

= 25˚C

T

A

1.2

1.0

0.8

0.6

NORMALIZED CTR

0.4

0.2

0.0

0 5 10 15 20

(Black Package)

IF - FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA)

Fig. 3 Normalized CTR vs. Ambient Temperature

(Black Package)

1.6

1.4

1.2

1.0

IF = 10 mA

Normalized to

= 10 mA

I

F

Fig.2 Normalized CTR vs. Forward Current

(White Package)

1.6
VCE = 5.0V

= 25˚C

T

A

1.4

1.2

1.0

0.8

0.6

0.4

NORMALIZED CTR

0.2

0.0

02468101214161820

Normalized to

= 10 mA

I

F

Fig. 4 Normalized CTR vs. Ambient Temperature

(White Package)

1.4

1.2

1.0

0.8

IF = 5 mA IF = 5 mA

IF = 10 mA

0.8

NORMALIZED CTR

0.6
Normalized to

= 10 mA

I

F

= 25˚C

T

A

0.4

-75 -50 -25 0 25 50 75 100 125

IF = 20 mA

TA - AMBIENT TEMPERATURE (˚C) TA - AMBIENT TEMPERATURE (˚C)

Fig. 5 CTR vs. RBE (Unsaturated)

(Black Package)

1.0

)

0.9

0.8

RBE(OPEN)

0.7

/ CTR

0.6

RBE

0.5

0.4

0.3

0.2

0.1

0.0

NORMALIZED CTR ( CTR

10 100 1000

IF = 20 mA

IF = 10 mA

IF = 5 mA

RBE- BASE RESISTANCE (kΩ) RBE- BASE RESISTANCE (kΩ)

VCE= 5.0 V

0.6

IF = 20 mA

NORMALIZED CTR

0.4
Normalized to

= 10 mA

I

F

= 25˚C

T

A

0.2

-60 -40 -20

0

20 40 60 80 100

Fig. 6 CTR vs. RBE (Unsaturated)

(White Package)

)

1.0

0.9
IF = 20 mA

0.8

RBE(OPEN)

0.7

/ CTR

0.6

RBE

0.5

0.4

0.3

0.2

0.1

0.0

NORMALIZED CTR ( CTR

10 100 1000

IF = 10 mA

IF = 5 mA

VCE= 5.0 V