Fairchild Semiconductor BC184L Datasheet
BC184L
DISCRETE POWER & SIGNAL
TECHNOLOGIES
SILICON NPN SMALL SIGNAL TRANSISTOR
BVCEO . . . . 30 V (Min)
hFE . . . . 130 (Min) @ VCE = 5.0 V, IC = 100 mA
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
TEMPERATURES
Storage Temperature -55 Degrees C to 150 Degrees C
Operating Junction Temperature 150 Degrees C
POWER DISSIPATION (NOTES 2 & 3)
Total Device Dissipation at TA = 25
VOLTAGES & CURRENT
VCEO Collector to Emitter 30 V
VCBO Collector to Base 45 V
VEBO Emitter to Base 5 V
IC Collector Current 500 mA
1 2 3
B C E
1 2 3
0.175 - 0.185
(4.450 - 4.700)
LOGOXYY
BC
184L
0.135 - 0.145
(3.429 - 3.683)
0.175 - 0.185
(4.450 - 4.700)
0.500
(12.70)
0.016 - 0.021
(0.410- 0.533)
0.045 - 0.055
(1.143- 1.397)
0.095 - 0.105
(2.413 - 2.667)
SEATING
PLANE
MIN
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
BVCBO Collector to Base Voltage 45 V IC = 10 uA
BVCEO Collector to Emitter Voltage 30 V IC = 2.0 mA
BVEBO Emitter to Base Voltage 5 V IE = 10 uA
ICBO Collector Cutoff Current 15 nA VCB = 30 V
IEBO Emitter Cutoff Current 15 nA VEB = 4 V
hFE DC Current Gain 100 VCE = 5.0 V IC = 10 uA
130 VCE = 5.0 V IC = 100 mA
VCE(sat) Collector-Emitter Saturation Voltage C = 10mA IB = 0.5mA
0.6 V IC = 100mA IB = 5.0mA
VBE(sat) Base-Emitter Saturation Voltage C = 100mA IB = 5.0mA
VBE(on) Base -Emitter On Voltage 0.55 0.7 V VCE = 5.0 V IC = 2mA
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DISCRETE POWER & SIGNAL
TECHNOLOGIES
BC184L
SILICON NPN SMALL SIGNAL TRANSISTOR
ELECTRICAL CHARACTERISTICS Con’t (25 Degrees C Ambient Temperature unless otherwise stated)
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
COB Output Capacitance 5.0 pF VCB = 10 V, f = 1 MHz
fT Current Gain - Bandwidth Product CE = 5 V IC = 10 mA
f = 100 Mhz
hfe Small Signal Current Gain 240 900 - VCE = 5 V, IC=2.0 mA, f =1KHz
NF Noise Figure 4 dB VCE = 5 V, IC = 200 uA,
Rg = 2 Kohms, f = 30Hz-15kHz
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
These ratings are based on a maximum junction temperature of 150 degrees C.
Page 2 of 2
Pr1094
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