Fairchild Semiconductor 2N5486, 2N5485, 2N5484 Datasheet

Discrete POWER & Signal

Technologies

2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486

2N5484
2N5485
2N5486

G

S

D

TO-92

MMBF5484
MMBF5485
MMBF5486

G

SOT-23

Mark: 6B / 6M / 6H

S

D

N-Channel RF Amplifier

This device is designed primarily for electronic switching
applications such as low On Resistance analog switching.
Sourced from Process 50.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

DG

V

GS

I

GF

TJ ,T

stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Drain-Gate Voltage 25 V
Gate-Source Voltage - 25 V
Forward Gate Current 10 mA
Operating and Storage Junction Temperature Range -55 to +150

°

C

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N5484 *MMBF5484

P

D

R

θ

JC

R

θ

JA

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

ã 1997 Fairchild Semiconductor Corporation

Total Devi ce Dissipation

Derate above 25°C

Ther mal Resist ance, Junction to C ase 125
Thermal Resistance, Junction to Ambient 357 556

350

2.8

225

1.8

mW

mW/°C

C/W

°

C/W

°

(BR)

µ

)

µ

µ

µ

µ

µ

µ

µ

µ

µ

µ

µ

µ

µ

N-Channel RF Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

OFF CHARACTERISTICS

V

GSS

I

GSS

V

GS(off

ON CHARACTERISTICS

I

DSS

SMALL SIGNAL CHARACTERISTICS

g

fs

Re(y

is)

g

os

Re(y

os)

Re(y

fs)

C

iss

C

rss

C

oss

NF Noise Figure

*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2%

Gate-Source Breakdow n Voltage

I

= - 1.0 µA, VDS = 0

G

Gate Reverse Current VGS = - 20 V, VDS = 0

V

= - 20 V, VDS = 0, TA = 100°C

GS

Gate-Source Cutoff Voltag e VDS = 15 V, ID = 10 nA

Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0

Forward Transfer Conductance VDS = 15, V

Input Conductance VDS = 15, V

V

= 15, V

DS

= 0, f = 1.0 kHz

GS

= 0, f = 100 MHz

GS

= 0, f = 400 MHz

GS

2N5485 / 2N5486

Output Conductance VDS = 15, V

Output Conductance VDS = 15, V

V

= 15, V

DS

= 0, f = 1.0 kHz

GS

= 0, f = 100 MHz

GS

= 0, f = 400 MHz

GS

2N5485 / 2N5486

Forward Transconductance VDS = 15, V

V

= 15, V

DS

Input Capacitance VDS = 15, V
Reverse Transfer Capacitance VDS = 15, V
Output Capacitance VDS = 15, V

V

= 15 V, RG = 1.0 kΩ,

DS

= 0, f = 100 MHz

GS

= 0, f = 400 MHz

GS

= 0, f = 1.0 MHz 5.0 pF

GS

= 0, f = 1.0 MHz 1.0 pF

GS

= 0, f = 1.0 MHz 2.0 pF

GS

f = 100 MHz
V

= 15 V, RG = 1.0 kΩ,

DS

f = 400 MHz
V

= 15 V , RG = 1.0 kΩ,

DS

f = 100 MHz
V

= 15 V, RG = 1.0 kΩ,

DS

f = 400 MHz

2N5485 / 2N5486

2N5485 / 2N5486

2N5484
2N5485
2N5486

2N5484
2N5485
2N5486

2N5484
2N5485
2N5486

2N5484

2N5484
2N5485
2N5486

2N5484

2N5484

2N5485
2N5486

2N5484

2N5484

- 25 V

- 1.0

- 0.2

- 0.3

- 0.5

- 2.0

1.0

4.0

8.0

3000
3500
4000

- 3.0

- 4.0

- 6.0

5.0
10
20

6000
7000
8000

100

1000

50
60
75

75

100

2500
3000

3500

3.0

4.0

2.0

4.0

mA
mA
mA

mhos
mhos
mhos

mhos
mhos

mhos
mhos
mhos

mhos
mhos

mhos
mhos

mhos

2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486

nA

A
V
V
V

dB
dB
dB
dB

Typical Characteristics

2N5484 / 2N5485 / 2N5486 / MMBF5484 / MMBF5485 / MMBF5486

N-Channel RF Amplifier

(continued)

20

V = -4.5V

16

12

8

4

D

I - DRAIN CURRENT (mA)

0

7
6
5
4
3
2
1
0

gfs -- TRANSCONDUCTANCE (mmhos)

Transfer Characteristics

GS(OFF)

O

T = -55 C

A

O

T = +25 C

A

O

T = +125 C

A

T = -55 C

A

T = +25 C

A

T = +125 C

A

-2.5 V

V - GATE-SOURCE VOLTAGE(V)

GS

Transconductance

Characteristics

O

T = -55 C

A

-2.5 V

V - GATE-SOURCE VOLTAGE(V)

GS

O

T = +25 C

A

T = +125 C

A

O

V = 15V

DS

O

O

O

V = 15V

DS

T = -55 C

A

T = +25 C

A

T = +125 C

A

V = -4.5V

GS(OFF)

Chann el Resistance vs Temperature

1000

Ω

500

V = -1.0V

300
200

GS(OFF)

-2.5 V

-5.0V

100

50
30

20

DS

r - DRAIN ON RESISTANCE ( )

-5-4-3-2-10

10

-50 0 50 100 150

-8.0 V

V = 100mV

DS

V = 0 V

GS

°°

°

T - AMBIENT TEMPERATURE ( C)

A

°°

Common Drain-Source

Characteristics

5

4

O

O

O

-5-4-3-2-10

3

2

1

D

I -- DRAIN CURRENT (mA)

0

0 0.2 0.4 0.6 0.8 1

O

T = +25 C

A

TYP V = -5.0V

GS(OFF)

GS

V = 0V

V - DRAIN-SOURCE VOL TAGE(V)

DS

-0.5V

-1.0V

-1.5V

-2.0V

-2.5V

-3.0V

-3.5V

-4.0V

Output Conductance vs

Drain Current

O

T = +25 C

A

f = 1.0 kHz

20
10

V = 5v

DG

5

1

0.5

V = -1.5V

GS(OFF)

0.1

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

gos -- OUTPUT CONDUCTANCE (u mhos)

V = -5.5V

GS(OFF)

10

20

5

15

10
15

20

V = -3.5V

GS(OFF)

I -- DRAIN CURRENT (mA)

D

5.0V
10V

15V

20V

Transconductance

Parameter Interactions

Ω

gfs, I @ V = 15 V, V = 0 PULSE

20

DS

10

r -- DRAIN "ON" RESISTANCE ( )

-

1235710

DSDSS

r @ V = 100mV, V = 0

DS

DS

V @ V = 15V, I = 1nA

GS(OFF)

V - GATE-SOURCE VOLTAGE(V)

GS

--

GS

GS

GS D

--

100
50

30
20

10
5

3
2

1

-

DSS

I -- DRAIN CURRE NT ( mA )

gfs --- TRANSCONDUCTANCE ( mmhos )