Fairchild Semiconductor 2N5462, 2N5461, 2N5460 Datasheet
Discrete POWER & Signal
Technologies
2N5460 / 2N5461 / 2N5462 / MMBF5460 / MMBF5461
2N5460
2N5461
MMBF5460
MMBF5461
2N5462
G
D
G
S
D
P-Channel General Purpose Amplifier
This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources. Sourced
from Process 89.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
-
Symbol Parameter Value Units
V
DG
V
GS
I
GF
TJ ,T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Drain-Gate Voltage - 40 V
Gate-Source Voltage 40 V
Forward Gate Current 10 mA
Operating and Storage Junction Temperature Range -55 to +150
TO-92
SOT-23
Mark: 6E / 61U
S
C
°
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N5460 *MMBF5460
P
D
R
θ
JC
R
θ
JA
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
ã 1997 Fairchild Semiconductor Corporation
Total Devi ce Dissipation
Derate above 25°C
Ther mal Resist ance, Junction to C ase 83.3
Thermal Resistance, Junction to Ambient 200 357
625
5.0
350
2.8
mW
mW/°C
C/W
°
C/W
°
(BR)
µ
)
µ
µ
µ
µ
P-Channel General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
V
GSS
I
GSS
V
GS(off
V
GS
ON CHARACTERISTICS
I
DSS
Gate-Source Breakdow n Voltage
I
= 10 µA, VDS = 0
G
Gate Reverse Current VGS = 20 V, VDS = 0
V
= 20 V, VDS = 0, TA = 100°C
Gate-Source Cuto ff Voltage
GS
V
= 15 V, ID = 1.0 µA
DS
Gate-Source Voltage VDS = 15 V, ID = 0.1 mA
V
= 15 V, ID = 0.2 mA
DS
= 15 V, ID = 0.4 mA
V
DS
Zero-Gate Voltage Drain Current* VDS = 15 V, VGS = 0
2N5460
2N5461
2N5462
2N5460
2N5461
2N5462
2N5460
2N5461
2N5462
40 V
5.0
1.0
0.75
1.0
1.8
0.5
0.8
1.5
- 1.0
- 2.0
- 4.0
6.0
7.5
9.0
4.0
4.5
6.0
- 5.0
- 9.0
- 16
nA
A
V
V
V
V
V
V
mA
mA
mA
2N5460 / 2N5461 / 2N5462 / MMBF5460 / MMBF5461
SMALL SIGNAL CHARACTERISTICS
g
fs
g
os
C
iss
C
rss
NF Noise Figure VDS = 15 V, VGS = 0,
e
n
Forward Transfer Conductance VDS = 15, VGS = 0, f = 1.0 kHz
Output Conductance VDS = 15, VGS = 0, f = 1.0 kHz 75
Input Capacitance VDS = 15, VGS = 0, f = 1.0 MHz 5.0 7.0 pF
Reverse Transfer Capacitance VDS = 15, VGS = 0, f = 1.0 MHz 1.0 2.0 pF
R
= 1.0 megohm, f = 100 Hz,
G
BW = 1.0 Hz
Equivalent Short-Circuit Input
Noise Voltage
VDS = 15 V, VGS = 0, f = 100 Hz,
BW = 1.0 Hz
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2%
2N5460
2N5461
2N5462
1000
1500
2000
4000
5000
6000
mhos
mhos
mhos
mhos
1.0 2.5 dB
60 115
nV/ÖHz
Typical Characteristics (continued)
2N5460 / 2N5461 / 2N5462 / MMBF5460 / MMBF5461
P-Channel General Purpose Amplifier
(continued)
Transfer Characteristics
Common Drain-Source
Transfer Charactersitics
Parameter Interactions
Leakage Current vs. Voltage
Channel Resistance vs.
Temperature
Typical Characteristics (continued)
2N5460 / 2N5461 / 2N5462 / MMBF5460 / MMBF5461
P-Channel General Purpose Amplifier
(continued)
Output Conductance vs.
Drain Current
Noise Voltage vs. Frequency Capacitance vs. Voltage
Transconductance vs.
Drain Current
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