Fairchild Semiconductor 2N5400 Datasheet
2N5400
2N5400
Discrete POWER & Signal
Technologies
C
B
E
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring high voltages. Sourced from Process
74. See 2N5401 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 120 V
Collector-Base Voltage 130 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
2N5400
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 120 V
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 13 0 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
5.0 V
Collector Cutoff Current VCB = 100 V, IE = 0
= 100 V, IE = 0, TA = 100 °C
V
CB
Emit ter Cutoff C u rre nt VEB = 3.0 V, IC = 0 50 nA
DC Cur rent Ga in VCE = 5.0 V, IC = 1.0 mA
V
= 5.0 V, IC = 10 mA
CE
V
= 5.0 V, IC = 50 mA
Collector-Emitter Saturation Voltag e IC = 10 mA, IB = 1.0 mA
)
Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
)
CE
I
= 50 mA, IB = 5.0 mA
C
I
= 50 mA, IB = 5.0 mA
C
30
40
40
100
100
180
0.2
0.5
1.0
1.0
nA
µ
A
V
V
V
V
2N5400
SMALL SIGNAL CHARACTERISTICS
C
ob
f
T
h
fe
NF Noise Figure
Output Capacitance VCB = 10 V, f = 1.0 MHz 6.0 pF
Current Gain - Bandwidth Product IC = 10 mA, VCE = 10 V,
Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V,
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 10 0 M Hz
f = 1. 0 kHz
= 5.0 V, IC = 250 µA,
V
CE
= 1.0 kΩ,
R
S
f = 10 Hz to 15.7 kHz
100 400
30 200
8.0 V
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