Fairchild Semiconductor 2N5306 Datasheet
2N5306
2N5306
Discrete POWER & Signal
Technologies
C
B
E
TO-92
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at currents to 1.0 A. Sourced from
Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 25 V
Collector-Base Voltage 25 V
Em i t ter - Bas e V olt ag e 12 V
Collector Current - Continuous 1.2 A
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Un i ts
2N5306
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
NPN Darlington Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
V
BE(on)
Collector-Emitter Breakdown Voltage* IC =10 mA, IB = 0 25 V
Collector-Base Breakdown Voltage IC = 0.1 µA, IE = 025V
Em i t ter - Bas e B r e akdown Vol tage
= 0.1 µA, IC = 0
I
E
Collector Cutoff Current VCB = 25 V, IE = 0
= 25 V, IE = 0, TA = 100 °C
V
CB
Emitter Cutoff Current VEB = 12 V, IC = 0 0.1
DC Cu r ren t Gain VCE = 5.0 V, IC = 2.0 mA
V
= 5.0 V, IC = 100 mA
Collector-Emitter Saturation Voltage IC = 200 mA, IB = 0.2 mA 1.4 V
)
Base- Emi tt er Saturation Voltage IC = 200 mA, IB = 0.2 mA 1.6 V
)
CE
12 V
0.1
20
7,00 0
70,0 00
20,0 00
µ
A
µ
A
µ
A
Base-Emitter On Voltage IC = 200 mA, VCE = 5.0 V 1.5 V
2N5306
SMALL SIGNAL CHARACTERISTICS
C
cb
h
fe
Collector-Base Capacitance VCB = 10 V, f = 1.0 MHz 10 pF
Small-Signal Current Gain IC =2.0 mA, VCE = 5.0 V,
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 1. 0 kHz
=2.0 mA, VCE = 5.0 V,
I
C
f = 10 MHz
7,000
6.0
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