Fairchild Semiconductor 2N5210 Datasheet
2N5210
2N5210
Discrete POWER & Signal
Technologies
C
B
E
TO-92
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 50 V
Collector-Base Voltage 50 V
Em i t ter - Bas e V oltage 4. 5 V
Collector Current - Continuous 100 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteristic Max Units
2N5210
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 °C/W
625
5.0
mW
mW/°C
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
h
fe
NF Noise Figure IC = 20 µA, VCE = 5.0 V,
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage IC = 1.0 m A, IB = 0 50 V
Collector-Base Breakdown Voltage IC = 0.1 m A, IE = 0 50 V
Collector Cutoff Current VCB = 35 V, IE = 0 50 nA
Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA
DC Cu r re n t Ga in
= 100 µA, VCE = 5.0 V
I
C
= 1.0 m A, VCE = 5.0 V
I
C
IC = 10 mA, VCE = 5.0 V*
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.7 V
)
200
250
250
Base-Em i tt er On Vol tage IC = 1.0 m A, VCE = 5.0 V 0.85 V
Current Gain - Bandwidth Product
= 500 µA,V
I
C
CE
= 5.0 V,
30 MHz
f= 20 MHz
Collector-Base Capacitance VCB = 5.0 V, I
Small-Signal Current Gain IC = 1.0 m A, V
= 0, f = 100 kHz 4.0 pF
E
CE
= 5.0 V,
250 900
f = 1. 0 kHz
RS = 22 kΩ, f = 10 Hz to 15.7 kHz
= 20 µA, VCE = 5.0 V,
I
C
= 10 kΩ, f = 1.0 kHz
R
S
600
2.0
3.0
dB
dB
2N5210
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