Fairchild Semiconductor 2N5089, 2N5088 Datasheet
Discrete POWER & Signal
Technologies
2N5088 / MMBT5088 / 2N5089 / MMBT5089
2N5088
2N5089
C
B
E
TO-92
MMBT5088
MMBT5089
C
SOT-23
Mark: 1Q / 1R
B
E
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
Sourced from Process 07.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage
Collector-Base Voltage
Em i t ter- Base Voltage 4. 5 V
Col l ector Cur re nt - Continuous 100 mA
Operating and Storage Junction Temperature Range -55 to +150 °C
2N5088
2N5089
2N5088
2N5089
30
25
35
30
V
V
V
V
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
P
D
R
θ
JC
R
θ
JA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junctio n t o C ase 83.3
Thermal Resistance, Junctio n t o A m bi ent 200 357 °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
2N5088
2N5089
625
5.0
*MMBT5088
*MMBT5089
350
2.8
mW
mW/°C
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitter Breakdown Voltage* IC = 1.0 m A, IB = 0 2N5088
2N5089
C oll ector -Base Br eakdow n Voltag e
= 100 µA, IE = 0 2N5088
I
C
2N5089
30
25
35
30
Colle c tor Cu tof f Curr ent VCB = 20 V, IE = 0 2N5088
= 15 V, IE = 0 2N5089
V
CB
Emit ter Cu toff Curre nt VEB = 3.0 V, IC = 0
= 4.5 V, IC = 0
V
EB
DC Cu r re n t Ga in
= 100 µA, VCE = 5.0 V 2N5088
I
C
2N5089
= 1.0 m A, VCE = 5.0 V 2N5088
I
C
2N5089
= 10 mA, VCE = 5.0 V* 2N5088
I
C
2N5089
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.5 V
)
300
400
350
450
300
400
Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V 0.8 V
50
50
50
100
900
1200
V
V
V
V
nA
nA
nA
nA
2N5088 / MMBT5088 / 2N5089 / MMBT5089
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
C
eb
h
fe
NF Noise Figure
Current Gain - Bandwidth Product
= 500 µA,V
I
C
f = 20 MHz
Collector-Base Capacitance VCB = 5.0 V, I
Em i t ter- Base C a paci tance VBE = 0.5 V, I
Small-Signal Current Gain IC = 1.0 m A, V
f = 1. 0 kHz 2N5089
= 100 µA, VCE = 5.0 V, 2N5088
I
C
= 10 kΩ, 2N5089
R
S
f = 10 Hz to 15.7 kHz
= 5.0 m A,
CE
= 0, f = 100 kHz 4. 0 pF
E
= 0, f = 100 kHz 10 pF
C
= 5.0 V, 2N5088
CE
50 MHz
350
450
1400
1800
3.0
2.0
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271
Nc=2 Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n
Tf=821.7p Itf=.35 Vtf=4 Xtf=7 Rb=10)
dB
dB
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