Fairchild Semiconductor 2N5087, 2N5086 Datasheet
Discrete POWER & Signal
Technologies
2N5086 / MMBT5086 / 2N5087 / MMBT5087
2N5086
2N5087
C
B
E
TO-92
MMBT5086
MMBT5087
C
SOT-23
Mark: 2P / 2Q
B
E
PNP General Purpose Amplifier
This device is designed for low level, high gain, low noise general
purpose amplifier applications at collector currents to 50 mA.
Sourced from Process 62.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Collector-Emitter Voltage 50 V
Collector-Base Voltage 50 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 100 mA
Operating and Storage Junction Temperature Range -55 to +150
°
C
Thermal Characteristics TA= 25°C unless otherwise noted
Symbol Characteristic Max Units
P
D
R
θ
JC
R
θ
JA
Total Device Dissipation
Derate above 25°C
Thermal Resist ance, Junction to Case 83.3
Thermal Resist ance, Junction to Ambient 200 357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
ã 1997 Fairchild Semiconductor Corporation
2N5086
2N5086
625
5.0
*MM BT5086
*MM BT5087
350
2.8
mW
mW/°C
C/W
°
C/W
°
(BR)
(BR)
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
CEO
V
CBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitte r Breakdown Voltage* IC = 1.0 mA, IB = 0 50 V
Collector-Base Breakdown Voltag e
I
= 100 µA, IE = 0
C
50 V
Collector Cutoff Current VCB = 10 V, IE = 0
V
= 35 V, IE = 0
CB
Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 nA
DC Current Gain
I
= 100 µA, VCE = 5.0 V
C
2N5086
2N5087
I
= 1.0 mA, VCE = 5.0 V
C
2N5086
2N5087
I
= 10 mA, VCE = 5.0 V
C
2N5086
2N5087
Collector-Emitte r Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.3 V
)
150
250
150
250
150
250
Base-Emitter On Voltage IC = 1.0 mA, VCE = 5.0 V 0.85 V
10
50
500
800
nA
nA
2N5086 / MMBT5086 / 2N5087 / MMBT5087
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
h
fe
NF Noise Figure
Current Gain - Band width Product
I
= 500 µA,V
C
Collector-Base Capacitance VCB = 5.0 V, I
Small-Si gnal Current Gain IC = 1.0 mA, V
f = 1.0 kHz
I
= 100 µA, VCE = 5.0 V,
C
R
= 3.0 kΩ, f = 1.0 kHz
S
I
= 20 µA, VCE = 5.0 V,
C
R
= 10 kΩ,
S
f = 10 Hz to 15.7 kHz
= 5.0 V,f = 20 MHz
CE
= 0, f = 100 kHz 4.0 pF
E
= 5.0,
2N5086
CE
2N5087
2N5086
2N5087
2N5086
2N5087
40 MHz
150
250
600
900
3.0
2.0
3.0
2.0
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
Spice Model
PNP (Is=6.734f Xti=3 Eg=1.11 Vaf=45.7 Bf=254.1 Ne=1.741 Ise=6.734f Ikf=.1962 Xtb=1.5 Br=2.683 Nc=2
Isc=0 Ikr=0 Rc=1.67 Cjc=6.2p Mjc=.301 Vjc=.75 Fc=.5 Cje=7.5p Mje=.2861 Vje=.75 Tr=10.1n Tf=467.8p
Itf=.17 Vtf=5 Xtf=8 Rb=10)
dB
dB
dB
dB
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