Fairchild Semiconductor 2N4953 Datasheet
2N4953
2N4953
Discrete POWER & Signal
Technologies
E
C
B
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 19. See PN2222A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 30 V
Collector-Base Voltage 60 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 1.0 A
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
2N4953
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
V
BE(on)
Collector-Emitter Breakdown Voltage* IC =10 mA, IB = 0 30 V
C oll ec t or -Base Breakd ow n Volt age IC = 10 µA, IE = 0 60 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
5.0 V
Colle c tor Cu tof f Cu r ren t VCB = 40 V, IE = 0 50 nA
Emit ter Cutoff C u rre nt VEB = 3.0 V, IC = 0 50 nA
DC Cu r re n t Ga in VCE = 10 V, IC = 1.0 mA
V
= 10 V, IC = 10 mA
CE
= 10 V, IC = 150 mA
V
Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA 0.3 V
)
Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA 1.3 V
)
CE
75
150
200 600
Base- Emi tt er O n V oltage VCE = 10 V, IC = 150 mA 1.2 V
2N4953
SMALL SIGNAL CHARACTERISTICS
C
ob
h
fe
t
on
t
off
Output Capacitance VCB = 10 V, f = 1.0 MHz 8.0 pF
Small-Signal Current Gain IC = 20 mA, VCE = 10 V,
Turn-On Time VCC = 30 V, IC = 150 mA, 40 ns
Turn-Off Time
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 10 0 M Hz
I
= I
= 15 mA
B1
B2
2.5
400 ns
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