Fairchild Semiconductor 2N4410 Datasheet
2N4410
2N4410
Discrete POWER & Signal
Technologies
C
B
E
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 50 mA. Sourced
from Process 16. See 2N5551 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 80 V
Collector-Base Voltage 120 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
2N4410
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CEX
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
V
BE(on)
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 80 V
Collector-Emitter Breakdown Voltage IC = 500 µA, V
RBE = 8.2 k
= 5.0 V
BB
120 V
Ω
C oll ec t or -Base Breakd ow n Volt age IC = 10 µA, IE = 0 120 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
Colle c tor Cu tof f Cu r ren t VCB = 100 V, IE = 0
= 100 V, IE = 0, TA = 100 °C
V
CB
5.0 V
10
1.0
Emit ter Cutoff C u rre nt VEB = 4.0 V, IC = 0 100 nA
DC Cu r re n t Ga in VCE = 1.0 V, IC = 1.0 mA
= 1.0 V, IC = 10 mA
V
Collector-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA 0.2 V
)
Base-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA 0.8 V
)
CE
60
60 400
Base- Emi tt er O n V oltage VCE = 5.0 V, IC = 1.0 mA 0.8 V
nA
µ
A
2N4410
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
Output Capacitance VCB = 10 V, f = 100 kHz 12 pF
Input Capacitance VEB = 0.5 V, f = 100 kHz 50 pF
Small-Signal Current Gain IC = 10 mA, VCE = 10 V,
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 30 MHz
2.0 10
Loading...