Fairchild Semiconductor 2N4402 Datasheet
2N4402
2N4402
Discrete POWER & Signal
Technologies
C
B
E
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 40 V
Collector-Base Voltage 40 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 800 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
2N4402
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BL
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 40 V
Em i t ter - Bas e B r e akdown Vol tage
= 100 µA, IC = 0
I
E
5.0 V
Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1
Base Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1
DC Cu r re n t Ga in VCE = 1.0 V, IC = 1.0 mA
V
= 1.0 V, IC = 10 mA
CE
= 2.0 V, IC = 150 mA
V
CE
= 2.0 V, IC = 500 mA
V
Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
)
Base- Emi tt er Saturation Voltage IC = 150 mA, IB = 15 mA
)
CE
= 500 mA, IB = 50 mA
I
C
= 500 mA, IB = 50 mA
I
C
30
50
50
20
0.75 0.95
150
0.40
0.75
1.30
µ
A
µ
A
V
V
V
V
2N4402
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
h
fe
h
ie
h
re
h
oe
Output Capacitance VCB = 10 V, f = 140 kHz 8.5 pF
Input Capacitance VEB = 0.5 V, f = 140 kHz 30 pF
Small-Signal Current Gain IC = 20 mA, VCE = 10 V,
Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, 30 250
Input Impedance f = 1.0 kHz 0.75 7.5
Voltage Feedback Ratio 0.10 8.0
Output Adm i ttance 1.0 100 µmhos
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time VCC = 30 V, IC =150 mA, 15 ns
Rise Time
St or age Tim e VCC = 30 V, IC =150 mA, 225 ns
Fall Time IB1 = I
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 100 MHz
= 15 mA, V
I
B1
= 15 mA 30 ns
B2
BE
( off )
= 2.0 V
1.5
kΩ
x10
20 ns
-4
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