Fairchild Semiconductor 2N4125 Datasheet
2N4125
2N4125
Discrete POWER & Signal
Technologies
C
B
E
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents of 10 µA to 100 mA.
Sourced from Process 66. See 3906 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 30 V
Collector-Base Voltage 30 V
Emitter-Base Voltage 4.0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteristi c Max Units
2N4125
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
C/W
°C/W
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
CE(
sat
V
sat
BE(
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
NF Noise Figure
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown
IC = 1.0 mA, IB = 0 30 V
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
= 10 µA, IE = 0
I
C
= 10 µA, IC = 0
I
E
30 V
4.0 V
Co llecto r-C uto ff Cur rent VCB = 20 V, IE = 0 50 nA
Emitter-Cutoff Current VEB = 3.0 V, IC = 0 50 nA
DC Current Gain VCE = 1.0 V, IC = 2.0 mA
V
= 1.0 V, IC = 50 mA
Collector-Emitter Saturation Voltage IC = 50 mA , IB = 5.0 mA 0.4 V
)
Base-Emitter Saturation Voltage IC = 50 mA , IB = 5.0 mA 0.95 V
)
CE
50
25
Output Capacitance VCB = 5.0 V, f = 100 kHz 4.5 pF
Input Capacitance VBE = 0.5 V, f = 100 kHz 10 pF
Small-Signal Current Gain IC = 2.0 mA, VCE = 10 V,
f = 1.0 kHz
= 10 mA, VCE = 20 V,
I
C
f = 100 MHz
50
2.0
VCE = 5.0 V, IC = 100 µA,
= 1.0 kΩ,
R
S
f = 10Hz to 15.7 kHz,
150
200
5.0 dB
2N4125
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