Fairchild Semiconductor 2N4124 Datasheet

2N4124 MMBT4124

C

B

E

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23. See 2N3904
for characteristics.

TO-92

C

SOT-23

Mark: ZC

2N4124 / MMBT4124

Discrete POWER & Signal

Technologies

E

B

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

V

CEO

V

CBO

V

EBO

I

C

TJ, T

stg

Collector-Emitter Voltage 25 V
Collector-Base Voltage 30 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteri st ic Max Units

2N4124 *MMBT4124

P

D

R

θ

JC

R

θ

JA

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

Total De vice Dissip at i on

Derate above 25°C

Thermal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200 357 °C/W

625

5.0

350

2.8

mW

mW/°C

°C/W

 1997 Fairchild Semiconductor Corporation

NPN General Purpose Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

ON CHARACTERISTICS*

h

FE

V

sat

CE(

V

sat

BE(

SMALL SIGNAL CHARACTERISTICS

f

T

C

obo

C

ibo

C

cb

h

fe

NF Noise Figure

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Collector-Emitter Breakdown Voltage IC = 1.0 m A, IB = 0 25 V
C oll ec t or -Base Breakd ow n Volt age IC = 10 µA, IE = 0 30 V
Em i t ter - Bas e B r e akdown Vol tage

= 10 µA, IC = 0

I

C

Colle c tor Cu tof f Cu r ren t VCB = 20 V, I

= 0 50 nA

E

5.0 V

Emit ter Cutoff C u rre nt VEB = 3.0 V, IC = 0 50 nA

DC Cu r re n t Ga in IC = 2.0 m A, VCE = 1.0 V

I

= 50 mA, VCE = 1.0 V

Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.3 V

)

Base-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.95 V

)

C

Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,

120

60

300 MHz

f = 10 0 M Hz

Output Capacitance VCB = 5.0 V, IE = 0,

f = 10 0 kHz

Input Capacitance VBE = 0.5 V, IC = 0,

f = 1. 0 kHz

Collector-Base Capcitance VCB = 5.0 V, IE = 0,

f = 10 0 kHz

Small-Signal Current Gain VCE = 10 V, IC = 2.0 mA,

120 480

f = 1. 0 kHz

= 100 µA, VCE = 5.0 V,

I

C

=1.0kΩ, f=10 Hz to 15.7 kHz

R

S

360

4.0 pF

8.0 pF

4.0 pF

5.0 dB

2N4124 / MMBT4124