Fairchild Semiconductor 2N4123 Datasheet
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2N4123
2N4123
Discrete POWER & Signal
Technologies
C
B
E
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA. Sourced
from Process 23. See 2N3904 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 30 V
Collector-Base Voltage 40 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
2N4123
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
CE
(sat)
V
(sat)
BE
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
f
T
NF Noise Figure VCE = 5.0 V, IC = 100 µA,
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 30 V
Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
5.0 V
Collector Cutoff Current VCB = 20 V, IE = 0 50 nA
Emit ter Cutoff C u rre nt VEB = 3.0 V, IC = 0 50 nA
DC Cu r re n t Ga in VCE = 1.0 V, IC = 2.0 mA
V
= 1.0 V, IC = 50 mA
CE
50
25
150
Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.3 V
Base-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.95 V
Output Capacitance VCB = 5.0 V, f = 100 kHz 4.0 pF
Input Capacitance VEB = 0.5 V, f = 0.1 MHz 8.0 pF
Small-Signal Current Gain IC = 2.0 mA, VCE = 10 V,
f = 1. 0 kHz
= 10 mA, VCE = 20 V,
I
C
f = 100 MHz
Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V
50
200
2.5
250 MHz
f = 100 MHz
6.0 dB
= 1.0 kΩ,
R
S
= 10 Hz to 15.7 kHz
B
W
2N4123
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