Fairchild Semiconductor 2N3905 Datasheet
2N3905
2N3905
Discrete POWER & Signal
Technologies
C
B
E
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA. Sourced
from Process 66. See 2N3906 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 40 V
Collector-Base Voltage 40 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
2N3905
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BL
ON CHARACTERISTICS*
h
FE
V
CE(
sat
V
sat
BE(
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
5.0 V
Collector Cutoff Current VCE = 30 V, VOB = 3.0 V 50 nA
Base Cutoff Current VCE = 30 V, VOB = 3.0 V 50 nA
DC Cu r re n t Ga in VCE = 1.0 V, IC = 0.1 mA
V
= 1.0 V, IC = 1.0 mA
CE
= 1.0 V, IC = 10 mA
V
CE
VCE = 1.0 V, IC = 50 mA
= 1.0 V, IC = 100 mA
V
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
)
Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
)
CE
= 50 mA, IB = 5.0 mA
I
C
= 50 mA, IB = 5.0 mA
I
C
30
40
50
30
15
0.65 0.85
150
0.25
0.40
0.95
V
V
V
V
2N3905
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
h
fe
h
re
h
ie
h
oe
NF Noise Figure VCE = 5.0 V, IC = 100 µA,
Output Capacitance VCB = 5.0 V, f = 1.0 MHz 4.5 pF
Input Capacitance VEB = 0.5 V, f = 1.0 MHz 10 pF
Small-Signal Current Gain IC = 10 mA, VCE = 20 V,
f = 10 0 M Hz
Small-Signal Current Gain IC = 1.0 mA, VCE =10 V, 50 200
Voltage Feedback Ratio f = 1.0 KHz 0.1 5.0
Input Impedance 0.5 8.0
Output Impedance 1.0 40 µmh os
RS = 1.0 kΩ,
BW = 10 Hz to 15.7 KHz
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time VCC = 3.0 V, ICS = 10 mA, 35 ns
Rise Time
= 1.0 mA ,V
I
B1
OB
( off )
= 3.0 V
St or age Tim e VCC = 3.0 V, ICS = 10 mA, 200 ns
Fall Time IB1 = IB2 = 1.0 mA 60 ns
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
2.0
x10
kΩ
5.0 dB
35 ns
-4
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