Fairchild Semiconductor 2N3903 Datasheet
2N3903
2N3903
Discrete POWER & Signal
Technologies
C
B
E
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA. Sourced
from Process 23. See 2N3904 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 40 V
Collector-Base Voltage 60 V
Em i t ter - Bas e V olt ag e 6. 0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
2N3903
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
NPN General Purpose Amplifier
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
z
I
BL
ON CHARACTERISTICS*
h
FE
V
CE(
sat
V
sat
BE(
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
6.0 V
Collector Cutoff Current VCE = 30 V, VOB = 3.0 V 50 nA
Base Cutoff Current VCE = 30 V, VOB = 3.0 V 50 nA
DC Cu r re n t Ga in VCE = 1.0 V, IC = 0.1 mA
V
= 1.0 V, IC = 1.0 mA
CE
= 1.0 V, IC = 10 mA
V
CE
VCE = 1.0 V, IC = 50 mA
= 1.0 V, IC = 100 mA
V
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
)
Base- Emi tt er Saturation Voltage IC = 10 mA, IB = 1.0 mA
)
CE
= 50 mA, IB = 5.0 mA
I
C
= 50 mA, IB = 5.0 mA
I
C
20
35
50
30
15
0.65 0.85
150
0.2
0.3
0.95
2N3903
(continued)
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
h
fe
h
ie
h
re
h
oe
NF Noise Figure
Output Capacitance VCB = 5.0 V, f = 100 kHz 4.0 pF
Input Capacitance VEB = 0.5 V, f = 100 kHz 8.0 pF
Small-Signal Current Gain IC = 10 mA, VCE = 20 V,
Small-Signal Current Gain VCE = 10 V, IC = 1.0 mA 50 200
Input Impedance f = 1.0 kHz 1.0 8.0 kΩ
Voltage Feedback Ratio 0.1 5.0
Output Admittance 1.0 40 µmhos
SWITCHING CHARACTERISTICS
t
d
t
r
t
s
t
f
Delay Time VCC = 3.0 V, IC = 10 mA, 35 ns
Rise Time
St or age Tim e VCC = 3.0 V, IC = 10 mA 175 ns
Fall Time IB1 = IB2 = 1.0 mA 50 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 100 MHz
= 5.0 V, IC = 100 µA,
V
CE
= 1.0 kΩ,
R
S
BW = 10 Hz to 15.7 kHz
= 1.0 mA , V
I
B1
ob ( off )
= 0.5 V
2.5
x 10
6.0 dB
35 ns
-4
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