Fairchild Semiconductor 2N3859A Datasheet
2N3859A
2N3859A
Discrete POWER & Signal
Technologies
E
C
B
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 60 V
Collector-Base Voltage 60 V
Em i t ter - Bas e V olt ag e 6. 0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
2N3859A
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
SMALL SIGNAL CHARACTERISTICS
C
ob
f
T
rb’C
c
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 60 V
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 60 V
Em i t ter - Bas e B r e akdown Vol tage
= 100 µA, IC = 0
I
E
6.0 V
Collector Cutoff Current VCB = 18 V, IE = 0 0.5
Emit ter Cutoff C u rre nt VEB = 4.0 V, IC = 0 0.5
DC Cu r re n t Ga in VCE = 1.0 V, IC = 1.0 mA
V
= 1.0 V, IC = 10 mA
CE
75
100 200
Output Capacitance VCB = 10 V, f = 1.0 MHz 4 pF
Current Gain - Bandwidth Product IC = 2.0 mA, VCE = 10 V 90 250 MHz
Colle c tor - Base T ime Cons t a nt VCE = 10 V, IC = 2.0 mA,
150 pS
f = 31.9 MHz
2N3859A
µ
A
µ
A
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