Fairchild Semiconductor 2N3703 Datasheet
2N3703
2N3703
Discrete POWER & Signal
Technologies
E
C
B
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 68. See PN200 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 30 V
Collector-Base Voltage 50 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
2N3703
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
)
V
BE(on)
SMALL SIGNAL CHARACTERISTICS
C
ob
f
T
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 30 V
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 50 V
Em i t ter - Bas e B reakdo w n Volt age
= 100 µA, IC = 0
I
E
5.0 V
Collector Cutoff Current VCB = 20 V, IE = 0 100 nA
Emitter Cu toff Curre n t VEB = 3.0 V, IC = 0 100 nA
DC Cu r re n t Ga in VCE = 5.0 V, IC = 50 mA 30 150
Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 0.25 V
Base- Emi tt er O n V oltage VCE = 5.0 V, IC = 50 mA 0.6 1.0 V
Output Capacitance VCB = 10 V, f = 1.0 MHz 12 pF
Current Gain - Bandwidth Product IC = 50 mA, VCE = 5.0 V,
100 MHz
f = 20 MHz
2N3703
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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