Fairchild Semiconductor 2N3663 Datasheet
2N3663
2N3663
Discrete POWER & Signal
Technologies
E
C
B
TO-92
NPN RF Transistor
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43. See PN918 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 12 V
Collector-Base Voltage 30 V
Em i t ter - Bas e V olt ag e 3. 0 V
Collector Current - Continuous 50 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Un i ts
2N3663
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissipat i on
Derate above 25°C
Thermal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient 357 °C/W
350
2.8
mW
mW/°C
°C/W
NPN RF Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
SMALL SIGNAL CHARACTERISTICS
f
T
C
ob
rb’C
C
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 12 V
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 30 V
Em i t ter - Bas e B r e akdown Vol tage
= 100 µA, IC = 0
I
E
Collector-Cutoff Current VCB = 15 V, IE = 0 0.5
Emitter-Cutoff Current VEB = 2.0 V, IC = 0 0.5
3.0 V
µ
µ
DC Cu r ren t Gain VCE = 10 V, IC = 8.0 mA 20
Current Gain - Bandwidth Product IC = 5.0 mA, VCE = 10 V,
700 2100 MHz
f = 100 MHz
Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 0.8 1.7 pF
Collector Base Time Constant IC = 8.0 mA, VCE = 10 V,
80 pS
f = 79.8 MHz
A
A
2N3663
FUNCTIONAL TEST
NF Noise Figure IC = 1.0 mA, VCE = 6.0 V,
f = 60 MHz, Rg = 40 0 Ω
G
pe
Ampl ifier Pow er Gain IC = 6.0 mA, VCE = 12 V,
f = 20 0 M Hz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
6.5 dB
1.5 dB
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