Fairchild FDB8860 service manual

FDB8860

N-Channel Logic Level PowerTrench® MOSFET

30V, 80A, 2.6mΩ

FDB8860 N-Channel Logic Level PowerTrench

December 2010

Features

 R

 Q

 Low Miller Charge

 Low QRR Body Diode

 UIS Capability (Single Pulse and Repetitive Pulse)

 RoHS Compliant

= 1.9mΩ (Typ), VGS = 5V, ID = 80A

DS(ON)

= 89nC (Typ), V

g(5)

GS

= 5V

Applications



DC-DC Converters

®

MOSFET

FDB8860 Rev A2

©2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2

www.fairchildsemi.com1

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current
Continuous (V

Continuous (V

Continuous (V

= 10V, TC < 163oC)

GS

= 5V, TC < 162oC) 80 A

GS

= 10V, TC = 25oC, with R

GS

Pulsed Figure 4 A

S i n g l e P u l s e A v a l a n c h e E n e r g y ( N o t e 1 ) 9 4 7 mJ

Power Dissipation 254 W

o

Derate above 25

C1.7W/oC

Operating and Storage Temperature -55 to +175

= 25°C unless otherwise noted

C

= 43oC/W) 31 A

θJA

80 A

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case 0.59

Thermal Resistance Junction to Ambient (Note 2) 62

Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area 43

o

C/W

o

C/W

o

C/W

FDB8860 N-Channel Logic Level PowerTrench

o

C

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB8860 FDB8860 TO-263AB 330mm 24mm 800units

Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(ON)

Dynamic Characteristics

C

ISS

C

OSS

C

RSS

R

G

Q

g(TOT)

Q

g(5)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V 30 - - V

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

Gate to Source Threshold Voltage VDS = VGS, ID = 250μA 1 1.7 3 V

Drain to Source On Resistance

Input Capacitance

Output Capacitance - 1710 2275 pF

Reverse Transfer Capacitance - 1050 1575 pF

Gate Resistance f = 1MHz - 1.8 - Ω

Total Gate Charge at 10V V

Total Gate Charge at 5V V

Threshold Gate Charge V

Gate to Source Gate Charge - 26 - nC

Gate Charge Threshold to Plateau - 18 - nC

Gate to Drain “Miller” Charge - 33 - nC

= 25°C unless otherwise noted

J

V

= 24V

DS

V

= 0V

GS

ID = 80A, VGS = 10V - 1.6 2.3

ID = 80A, VGS = 5V - 1.9 2.6

ID = 80A, VGS = 4.5V - 2.1 2.7

I

= 80A, VGS = 10V,

D

TJ = 175°C

VDS = 15V, VGS = 0V,
f = 1MHz

= 0V to 10V

GS

= 0V to 5V - 89 115 nC

GS

= 0V to 1V - 9.1 12 nC

GS

- - 1

= 150°C - - 250

T

J

- 2.5 3.6

- 9460 12585 pF

- 165 214 nC

V

= 15V

DD

I

= 80A

D

Ig = 1.0mA

μA

mΩ

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2

2

www.fairchildsemi.com

Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units

= 25°C unless otherwise noted

J

Switching Characteristics

t

(on)

t

d(on)

t

r

t

d(off)

t

f

t

off

Turn-On Time

Turn-On Delay Time - 14 - ns

Turn-On Rise Time - 213 - ns

Turn-Off Delay Time - 79 - ns

V

= 15V, ID = 80A

DD

V

= 5V, RGS = 1Ω

GS

Turn-Off Fall Time - 49 - ns

Turn-Off Time - - 192 ns

- - 340 ns

Drain-Source Diode Characteristics

I

= 80A - - 1.25 V

V

SD

t

rr

Q

rr

Notes:
1: Starting T
2: Pulse width = 100s

= 25oC, L =0.47mH, I

J

Source to Drain Diode Voltage

Reverse Recovery Time I

Reverse Recovery Charge I

= 64A , V

AS

DD

= 30V, V

GS

= 10V.

SD

= 40A - - 1.0 V

I

SD

= 80A, dISD/dt = 100A/μs- - 43 ns

SD

= 80A, dISD/dt = 100A/μs- - 29 nC

SD

FDB8860 N-Channel Logic Level PowerTrench

®

MOSFET

©2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2

www.fairchildsemi.com3