Page 1
FDB8860
N-Channel Logic Level PowerTrench® MOSFET
30V, 80A, 2.6mΩ
FDB8860 N-Channel Logic Level PowerTrench
December 2010
Features
R
Q
Low Miller Charge
Low QRR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
= 1.9mΩ (Typ), VGS = 5V, ID = 80A
DS(ON)
= 89nC (Typ), V
g(5)
GS
= 5V
Applications
DC-DC Converters
®
MOSFET
FDB8860 Rev A2
©2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2
www.fairchildsemi.com1
Page 2
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current
Continuous (V
Continuous (V
Continuous (V
= 10V, TC < 163oC)
GS
= 5V, TC < 162oC) 80 A
GS
= 10V, TC = 25oC, with R
GS
Pulsed Figure 4 A
S i n g l e P u l s e A v a l a n c h e E n e r g y ( N o t e 1 ) 9 4 7 mJ
Power Dissipation 254 W
o
Derate above 25
C1.7W/oC
Operating and Storage Temperature -55 to +175
= 25°C unless otherwise noted
C
= 43oC/W) 31 A
θJA
80 A
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case 0.59
Thermal Resistance Junction to Ambient (Note 2) 62
Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area 43
o
C/W
o
C/W
o
C/W
FDB8860 N-Channel Logic Level PowerTrench
o
C
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDB8860 FDB8860 TO-263AB 330mm 24mm 800units
Electrical Characteristics T
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(ON)
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V 30 - - V
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20V - - ±100 nA
Gate to Source Threshold Voltage VDS = VGS, ID = 250μA 1 1.7 3 V
Drain to Source On Resistance
Input Capacitance
Output Capacitance - 1710 2275 pF
Reverse Transfer Capacitance - 1050 1575 pF
Gate Resistance f = 1MHz - 1.8 - Ω
Total Gate Charge at 10V V
Total Gate Charge at 5V V
Threshold Gate Charge V
Gate to Source Gate Charge - 26 - nC
Gate Charge Threshold to Plateau - 18 - nC
Gate to Drain “Miller” Charge - 33 - nC
= 25°C unless otherwise noted
J
V
= 24V
DS
V
= 0V
GS
ID = 80A, VGS = 10V - 1.6 2.3
ID = 80A, VGS = 5V - 1.9 2.6
ID = 80A, VGS = 4.5V - 2.1 2.7
I
= 80A, VGS = 10V,
D
TJ = 175°C
VDS = 15V, VGS = 0V,
f = 1MHz
= 0V to 10V
GS
= 0V to 5V - 89 115 nC
GS
= 0V to 1V - 9.1 12 nC
GS
- - 1
= 150°C - - 250
T
J
- 2.5 3.6
- 9460 12585 pF
- 165 214 nC
V
= 15V
DD
I
= 80A
D
Ig = 1.0mA
μA
mΩ
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2
2
www.fairchildsemi.com
Page 3
Electrical Characteristics T
Symbol Parameter Test Conditions Min Typ Max Units
= 25°C unless otherwise noted
J
Switching Characteristics
t
(on)
t
d(on)
t
r
t
d(off)
t
f
t
off
Turn-On Time
Turn-On Delay Time - 14 - ns
Turn-On Rise Time - 213 - ns
Turn-Off Delay Time - 79 - ns
V
= 15V, ID = 80A
DD
V
= 5V, RGS = 1Ω
GS
Turn-Off Fall Time - 49 - ns
Turn-Off Time - - 192 ns
- - 340 ns
Drain-Source Diode Characteristics
I
= 80A - - 1.25 V
V
SD
t
rr
Q
rr
Notes:
1: Starting T
2: Pulse width = 100s
= 25oC, L =0.47mH, I
J
Source to Drain Diode Voltage
Reverse Recovery Time I
Reverse Recovery Charge I
= 64A , V
AS
DD
= 30V, V
GS
= 10V.
SD
= 40A - - 1.0 V
I
SD
= 80A, dISD/dt = 100A/μs- - 43 ns
SD
= 80A, dISD/dt = 100A/μs- - 29 nC
SD
FDB8860 N-Channel Logic Level PowerTrench
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2
www.fairchildsemi.com3
Page 4
0 25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
POWER DISSIPATION MULIPLIER
TC, CASE TEMPERATURE( oC)
25 50 75 100 125 150 175
0
75
150
225
300
VGS = 10V
V
GS
= 5V
CURRENT LIMITED
BY PACKAGE
I
D
, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
NORMALIZED THERMAL
IMPEDANCE Z
θJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
2
DUTY CYCLE-DESCENDING ORDER
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJC
x R
θJC
+ T
C
P
DM
t
1
t
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
1000
I
(PK)
, PEAK CURRENT (A)
t, PULSE WIDTH (s)
SINGLE PULSE
3000
50
TC = 25oC
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
FDB8860 N-Channel Logic Level PowerTrench
Typical Characteristics T
= 25°C unless otherwise noted
J
Figure 1. Normalized Power Dissipation vs Case
Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2
www.fairchildsemi.com4
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
Page 5
Typical Characteristics T
110
0.1
1
10
100
1000
10us
10ms
DC
100ms
1ms
100us
I
D
, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE(V)
60
LIMITED BY R
DS(ON)
AREA MAY BE
OPERATION IN THIS
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
BY PACKAGE
CURRENT LIMITED
0.1 1 10 100 1000 10000
1
10
100
STARTING TJ = 150
o
C
I
AS
, AVALANCHE CURRENT (A)
tAV, TIME IN AVALANCHE (ms)
STARTING TJ = 25
o
C
500
tAV = (L)(IAS)/(1.3*RATED BV
DSS
- VDD)
If R = 0
If R
≠
0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BV
DSS
- VDD) +1]
1.0 1.5 2.0 2.5 3.0 3.5
0
40
80
120
160
TJ = -55oC
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.00.20.40.60.81.0
0
20
40
60
80
100
120
VGS = 4V
VGS = 10V
VGS = 5V
V
GS
= 3V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
345678910
1.5
2.0
2.5
3.0
3.5
4.0
TJ = 25oC
PULSE DURATION = 80μs
DUTY CYCLE=0.5% MAX
R
DS(ON)
, DRAIN TO SOURCE
ON-RESISTANCE
(mΩ)
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 40A
TJ = 175oC
-80 -40 0 40 80 120 160 200
0.6
0.8
1.0
1.2
1.4
1.6
ID = 80A
V
GS = 10V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
T
J
, JUNCTION TEMPERATURE( OC)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
= 25°C unless otherwise noted
J
FDB8860 N-Channel Logic Level PowerTrench
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
www.fairchildsemi.com5
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Page 6
-80 -40 0 40 80 120 160 200
0.2
0.4
0.6
0.8
1.0
1.2
1.4
NORMALIZED GATE
THRESHOLD VOLTAGE
TJ, JUNCTION TEMPERATURE( oC)
VGS = V
DS
ID = 250μA
-80 -40 0 40 80 120 160 200
0.90
0.95
1.00
1.05
1.10
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
TJ, JUNCTION TEMPERATURE( oC)
ID = 1mA
0.1 1 10
1000
10000
30
C
rss
C
oss
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
iss
f = 1MHz
V
GS
= 0V
500
20000
0 20406080100120140160180
0
2
4
6
8
10
ID = 1A
V
GS
, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE (nC)
VDD = 15V
ID = 80A
FDB8860 N-Channel Logic Level PowerTrench
Typical Characteristics T
= 25°C unless otherwise noted
J
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
®
MOSFET
Figure 13. Capacitance vs Drain to Source
©2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2
www.fairchildsemi.com6
Figure 14. Gate Charge vs Gate to Source Voltage
Voltage
Page 7
tm
®
tm
tm
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor an d/or its globa l subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
®
®
ESBC™
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FETBench™
FlashWriter
®
*
FPS™
®
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
PDP SPM™
Power-SPM™
®
®
®
PowerTrench
PowerXS™
SM
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®*
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
®
®
™
®
®
®
The Power Franchise
The Right Technology for Your Success™
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
®
®
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the in dustry. All manufactures of semiconductor products are experi encing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit part s experi ence ma ny pr oblems such as lo ss of brand r eput ation, sub stan dard perfor mance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild part s either di rectly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fai r child’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct o r from authorized distr ibutors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any ti me without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
www.fairchildsemi.com7
Rev. I51
Loading...