DYNEX MP04HBT590-14, MP04HBP590-14, MP04HBP590-16, MP04HBP590-18, MP04HBN590-16 Datasheet
...
MP04---590
1/10
www.dynexsemi.com
FEATURES
■ Dual Device Module
■ Electrically Isolated Package
■ Pressure Contact Construction
■ International Standard Footprint
■ Alumina (Non Toxic) Isolation Medium
■ Integral Water Cooled Heatsink
APPLICATIONS
■ Motor Control
■ Controlled Rectifier Bridges
■ Heater Control
■ AC Phase Control
VOLTAGE RATINGS
ORDERING INFORMATION
Order As:
MP04HBT590-18 or MP04HBT-16 or MP04HBT14
MP04HBP590-18 or MP04HBP-16 or MP04HBP14
MP04HBN590-18 or MP04HBN-16 or MP04HBN14
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
DRM
1800V
I
T(AV)
595A
I
TSM(per arm)
16800A
V
isol
3000V
MP04---590
Dual Thyristor, Thyristor/Diode Module
Replaces April 2001 version, DS5371-2.2 DS5371-3.1 October 2001
1800
1600
1400
MP04---590-18
MP04---590-16
MP04---590-14
Conditions
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 50mA
V
DSM
= V
RSM
=
V
DRM
= V
RRM
+ 100V
respectively
Lower voltage grades available.
Type Number Repetitive Peak
Voltages
V
DRM VRRM
V
Code
Circuit
HBT
HBP
HBN
Fig. 2 Electrical connections - (not to scale)
Fig.1 Circuit diagrams
Module type code: MP04.
For further information see Package Details.
MP04---590
2/10
www.dynexsemi.com
Test Conditions
Half wave resistive load T
case
= 75˚C
T
case
= 85˚C
T
case
= 75˚C
8.3ms half sine, T
j
= 125˚C
V
R
= 0
8.3ms half sine, T
j
= 125˚C
V
R
= 50% V
DRM
10ms half sine, Tj = 125˚C
V
R
= 0
10ms half sine, T
j
= 125˚C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Symbol
I
T(AV)
I
T(RMS
I
TSM
I2t
I
TSM
I2t
I
TSM
I2t
I
TSM
I2t
V
isol
Units
A
A
A
kA
A
2
s
kA
A
2
s
kA
A
2
s
kA
A
2
s
V
Max.
595
505
935
16.8
1411 X 10
3
13.5
911 X 10
3
15.7
1232 X 10
3
12.6
794 X 10
3
3000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Parameter
Mean on-state current
RMS value
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
MP04---590
3/10
www.dynexsemi.com
Test Conditions
dc
Half wave
3 Phase
Mounting torque = 5Nm
with mounting compound
Reverse (blocking)
-
Mounting - M6
Electrical connections - M10
-
Parameter
Thermal resistance - junction to case
(per thyristor or diode)
Thermal resistance - case to heatsink
(per thyristor or diode)
Virtual junction temperature
Storage temperature range
Screw torque
Weight (nominal)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-hs)
T
vj
T
stg
-
-
Units
˚C/kW
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
Nm (lb.ins)
Nm (lb.ins)
g
Max.
0.056
0.060
0.066
0.02
125
130
6 (35)
12 (106)
1580
Min.
-
-
-
-
-
–40
-
-
-
Units
mA
V/µs
A/µs
V
mΩ
Test Conditions
At V
RRM/VDRM
, Tj = 125˚C
To 67% V
DRM
, Tj = 125˚C
From 67% V
DRM
to 1500A, gate source 1.5A,
t
r
= 0.5µs, Tj = 125˚C
At T
vj
= 125˚C. See note 1
At T
vj
= 125˚C. See note 1
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
I
RRM/IDRM
dV/dt
dI/dt
V
T(TO)
r
T
Max.
50
1000
500
0.85
0.38
Min.
-
-
-
-
-
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
Loading...