DYNEX MP04HB910-26, MP04HB910-28, MP04HB910-30, MP04HB910-24 Datasheet

MP04HB910

MP04HB910

Dual Rectifier Diode Module

Preliminary Information

DS5425-1.2 February 2001

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (Non-toxic) Isolation Medium

APPLICATIONS

■ Power Supplies

■ Large IGBT Circuit 'Front Ends'

■ Rectifiers

■ Battery Chargers

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

MP04HB910-30
MP04HB910-28
MP04HB910-26
MP04HB910-24

3000
2800
2600
2400

T

vj

V

RSM

Conditions

= –40˚ to 150˚C,

= V

+ 100V

RRM

KEY PARAMETERS
V

RRM

I

F(AV)

I

FSM (per arm)

I

F(RMS)

V

isol

1

3000V

20000A

1440A
3000V

Fig.1 HB circuit configuration

915A

2

3

Lower voltage grades available

ORDERING INFORMATION

Order As:

MP04HB910-XX

XX shown in the part number about represents V
selection required.

Note: When ordering, please use the complete part number.
Please quote full part number in all correspondance.

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RRM

/100

Outline type code: MP04

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

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MP04HB910

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.

Symbol Parameter Conditions

I

F(AV)

I

F(RMS)

I

FSM

2

tI

I

I

FSM

2

t

I

V

isol

Surge (non-repetitive) forward current

Surge (non-repetitive) forward current

I
Isolation voltage

Mean forward current

RMS value

2

t for fusing

2

t for fusing 1.28 x 106A2s

Half wave resistive load

T

= 75oC 1440 A

case

T

= 85oC 1305 A

case

T

= 100oC 1090 A

case

10ms half sine; Tj = 150oC

VR = 0

10ms half sine; Tj = 150oC

VR = 50% V

Commoned terminals to base plate AC RMS, 1 min, 50Hz

RRM

T

= 75oC

case

= 85oC 830 A

T

case

T

= 100oC 695 A

case

915 A

20 kA

2.0 x 10

16 kA

3000 V

UnitsMax.

6

A2s

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

T

vj

T

stg

-

-

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Thermal resistance - junction to case
(per diode)

Virtual junction temperature

Storage temperature range

Screw torque

Weight (nominal)

Parameter

Conditions Min. Max. Units

dc

3 Phase

- 0.056

-

0.060Halfwave

- 0.066

Reverse (blocking) - 150

­Mounting
Electrical connections

–40 150

6 (53) -

- 12 (106)

- 1580 g-

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o

C/W

o

C/W

o

C/W

o

C

o

C

Nm (lb.ins)
Nm (lb.ins)

CHARACTERISTICS

MP04HB910

Symbol

I

RRM

Q

S

I

RR

V

TO

r

T

Parameter

Peak reverse current

Total stored charge

Peak recovery current

Threshold voltage. See Note 1.
Slope resistance. See Note 1. 0.29 mΩ

At V

, T

RRM

I

= 1000A, dIRR/dt = 3A/µs

F

= 150˚C, VR = 100V

T

case

= 150˚C - 0.7 V

At T

vj

At Tvj = 150˚C -

Conditions Min. Max. Units

= 150oC-50mA

case

-

µC1600

-85A

Note 1: The data given in this datasheet with regard to forward voltage drop is the for the calculation of the power dissipation in

the semiconductor elements only. Forward voltage drops measured at the power terminals will be in excess of these figures due to
the impedance of the busbars from the terminals to the semiconductor.

CURVES

2500

Measured under pulse
conditions

- (A)

2000

F

2200
2000
1800
1600

1500

Tj = 150˚C

1000

Instantaneous forward current I

500

0

0.5 0.75 1.0 1.51.25
Instantaneous forward voltage V

Fig.3 Maximum (limit) forward characteristics

Tj = 25˚C

- (V)

F

1400
1200
1000

800
600

Power dissipation (Watts, per arm)

400
200

0

0 200 400 600 800 1000 1200 1400 1600 1800

Forward current, (Average, per arm) I

F(AV)

- (A)

Fig.4 Power dissipation curves

30°
60°
90°
120°
180°
DC

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