DYNEX MP04DD810-28, MP04DD810-24, MP04DD810-30, MP04DD810-26 Datasheet
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MP04DD810
FEATURES
■ Dual Device Module
■ Electrically Isolated Package
■ Pressure Contact Construction
■ International Standard Footprint
■ Alumina (Non-toxic) Isolation Medium
APPLICATIONS
■ Power Supplies
■ Large IGBT Circuit 'Front Ends'
■ Rectifiers
■ Battery Chargers
VOLTAGE RATINGS
KEY PARAMETERS
V
RRM
3000V
I
F(AV)
812A
I
FSM (per arm)
20000A
I
F(RMS)
1276A
V
isol
3000V
3000
2800
2600
2400
MP04DD810-30
MP04DD810-28
MP04DD810-26
MP04DD810-24
Conditions
T
vj
= –40˚ to 150˚C,
V
RSM
= V
RRM
+ 100V
Lower voltage grades available
Type Number Repetitive Peak
Voltages
V
DRM VRRM
V
Fig.1 DD circuit configuration
ORDERING INFORMATION
Order As:
MP04DD810-XX-W2 1/4 - 18 NPT connection
MP04DD810-XX-W3 1/4 - 18 NPT connection
MP04DD810-XX-W3A 1/4 - 18 NPT water connection
thread
XX shown in the part number about represents V
DRM
/100
selection required, eg. MP04DD810-28-W2
Note: When ordering, please use the complete part number.
Please quote full part number in all correspondance.
1
2
3
MP04DD810
Dual Rectifier Diode Water Cooled Module
Preliminary Information
DS5286-2.1 June 2001
Fig. 2 Module package variants - (not to scale)
Module outline type code: MP04-W2
(See Package Details for further information)
Module outline type code:
MP04-W3
Module outline type code:
MP04-W3A
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MP04DD810
Half wave resistive load
THERMAL AND MECHANICAL DATA
dc, 4.5 Ltr/min
Conditions Min. Max. Units
o
C/W
-
0.106Halfwave, 4.5 Ltr/min
T
vj
Virtual junction temperature
T
stg
Storage temperature range
-
Thermal resistance - junction to water
(per diode)
R
th(j-w)
Symbol
Parameter
Screw torque
6 (53) -
Nm (lb.ins)
–40 150
o
C
Reverse (blocking) - 150
o
C
3 Phase, 4.5 Ltr/min
- 0.112
o
C/W
- 0.102
o
C/W
Symbol Parameter Conditions
I
F(AV)
Mean forward current
I
F(RMS)
RMS value
UnitsMax.
885 A
T
water (in)
= 40oC 812 A
T
water (in)
= 25oC, 4.5 Ltr/min 1392 A
T
water (in)
= 40oC, 4.5 Ltr/min 1276 A
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
T
water (in)
= 25oC
10ms half sine; Tj = 150oC
VR = 0
10ms half sine; Tj = 150oC
VR = 50% V
RRM
I
FSM
Surge (non-repetitive) forward current
I
2
tI
2
t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing 1.28 x 106A2s
16 kA
2.0 x 10
6
A2s
20 kA
V
isol
Isolation voltage
3000 V
Commoned terminals to base plate AC RMS, 1 min, 50Hz
Mounting - M6
-
- 12 (106)
Nm (lb.ins)
Electrical connections - M10
-
Refer to
Drawing
g
-
-
Weight (nominal)
4.5 Ltr/min
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MP04DD810
Note 1: The data given in this datasheet with regard to forward voltage drop is the for the calculation of the power dissipation in
the semiconductor elements only. Forward voltage drops measured at the power terminals will be in excess of these figures due to
the impedance of the busbars from the terminals to the semiconductor.
CHARACTERISTICS
Peak reverse current
Parameter
µC1600
At Tvj = 150˚C -
Q
S
Total stored charge
I
F
= 1000A, dIRR/dt = 3A/µs
T
case
= 150˚C, VR = 100V
Symbol
I
RRM
I
RR
Peak recovery current
V
TO
Threshold voltage. See Note 1.
r
T
Slope resistance. See Note 1. 0.29 mΩ
At T
vj
= 150˚C - 0.7 V
-85A
-
At V
RRM
, T
case
= 150oC-50mA
Conditions Min. Max. Units
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