DYNEX MP03TT580-16, MP03TT580-17, MP03TT580-18 Datasheet

MP03TT580

Dual Thyristor Water Cooled Welding Module

Preliminary Information

DS5429-1.1 June 2001

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (Non Toxic) Isolation Medium

■ Integral Water Cooled Heatsink

APPLICATIONS

■ Welding

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages V

DRM VRRM

V

MP03TT580-18 MP03TT580-17 MP03TT580-16 MP03TT580-15

1800 1700 1600 1500

Lower voltage grades available

ORDERING INFORMATION

Conditions

T

= 0˚ to 125˚C,

vj

I

= I

= V = V

= 30mA

RRM

RSM

RRM

V V

DRM

DSM

DRM

respectively

= + 100V

KEY PARAMETERS V

DRM

I

LINE(cont.)

I

LINE(20cy./50%)

I

TSM(per arm)

V

isol

1

Fig. 1 Circuit diagram

Outline type code:

MP03 - W1 or W2

1800V 600A 1008A 6800A 3000V

G1K1K2G

2

23

Outline type code:

MP03 - W3 or W4

Order As:

MP03TT580-XX W1 With 1/4 BSP connection MP03TT580-XX W2 1/4 – 18 NPT connection MP03TT580-XX W3 1/4 – 18 NPT connection MP03TT580-XX W3A 1/4 – 18 NPT water connection thread MP03TT580-XX W4 With 1/4 BSP connection

XX shown in the part number about represents V selection required, e.g. MP03TT580-16-W3

DRM

/100

Note: When ordering, please use the whole part number. Auxiliary gate and cathode leads can be ordered separately.

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Outline type code: MP03 - W3A

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

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MP03TT580

ABSOLUTE MAXIMUM CURRENT RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Symbol

I

LINE

Max. controllable RMS line

Parameter

current - single phase

I

V

TSM

I2t

TSM

I2t

isol

Surge (non-repetitive) on-current

2

t for fusing

I

Surge (non-repetitive) on-current

2

t for fusing

I

Isolation voltage

THERMAL AND MECHANICAL RATINGS

Symbol

Parameter

Test Conditions

Continuous 50/60Hz T

4.5 Ltr/min T

20 cycles, 50% duty cycle T

4.5 Ltr/min T

R

= 0

= 125˚C

j

= 125˚C

j

DRM

10ms half sine, T

V

10ms half sine, T

= 50% V

V

R

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

water (in)

= 25˚C

= 40˚C

= 25˚C

= 40˚C

Min.

Max.

600

530

1186

1008

6.8

231x10

5.5

150x10

3000

Max.

3

Units

A

kA

2

A

kA

2

A

V

Units

s

2/9

R

th(j-w)

T

-

0.24

0.25

0.26

125

9(80)

Refer to

Thermal resistance - junction to water

(per thyristor)

dc, 4.5 Ltr/min

Half wave, 4.5 Ltr/min

3 Phase, 4.5 Ltr/min

vj

stg

-

Virtual junction temperature

Storage temperature range

Screw torque

Weight (nominal)

Reverse (blocking)

-

Mounting - M6

Electrical connections - M4

-

–40

5(44)

8(70)

-

˚C/kW

˚C

Nm (lb.ins)

g

drawings

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DYNAMIC CHARACTERISTICS

MP03TT580

Symbol

I

RRM/IDRM

dV/dt

dI/dt

V

T(TO)

r

T

Parameter

Peak reverse and off-state current

Linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

Test Conditions

DRM

= 125˚C

, Tj = 125˚C

to 500A, gate source 10V, 5Ω

DRM

At V

RRM/VDRM

To 67% V

From 67% V

t

= 0.5µs, Tj = 125˚C

r

At T

vj

At T

vj

Min.

-

Max.

300

1000

150

0.98

0.75

Units

Note : The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these

figures due to the impedance of the busbar from the terminal to the semiconductor.

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

V

GT

I

GT

Gate trigger voltage

Gate trigger current

Parameter

V

DRM

V

DRM

= 5V, T

Test Conditions

= 25oC

case

= 25oC

case

Max.

Units

3

150

mA

V/µs

A/µs

V

mΩ

V

mA

P

V

I

P

GD

FGM

FGN

RGM

FGM

GM

G(AV)

Gate non-trigger voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

At V

DRM Tcase

= 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 5

-

0.25

30

0.25

5

10

100

5

V

A

W

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