DYNEX MP03TT1250-15, MP03TT1250-16, MP03TT1250-17, MP03TT1250-18 Datasheet

MP03TT1250

G1K1K2G

2

1

23

MP03TT1250

Dual Thyristor Water Cooled Welding Module

Preliminary Information

DS5424-1.1 June 2001

FEATURES

■ Dual Device Module

■ Electrically Isolated Package

■ Pressure Contact Construction

■ International Standard Footprint

■ Alumina (Non Toxic) Isolation Medium

■ Integral Water Cooled Heatsink

APPLICATIONS

■ Welding

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages V

DRM VRRM

V

MP03TT1250-18 MP03TT1250-17 MP03TT1250-16 MP03TT1250-15

1800 1700 1600 1500

Lower voltage grades available

ORDERING INFORMATION

Conditions

T

= 0˚ to 125˚C,

vj

= I

= V = V

= 30mA

RRM

RSM

RRM

I V V

DRM

DSM

DRM

respectively

=

+ 100V

KEY PARAMETERS V

DRM

I

LINE(cont.)

I

LINE(20cy./50%)

I

TSM(per arm)

V

isol

Fig. 1 Circuit diagram

Outline type code:

MP03 - W1 or W2

1800V 798A 1258A 8100A 3000V

Outline type code:

MP03 - W3 or W4

Order As:

MP03TT1250-XX W1 With 1/4 BSP connection MP03TT1250-XX W2 1/4 – 18 NPT connection MP03TT1250-XX W3 1/4 – 18 NPT connection MP03TT1250-XX W3A 1/4 – 18 NPT water connection thread MP03TT1250-XX W4 With 1/4 BSP connection

XX shown in the part number about represents V selection required, e.g. MP03TT1250-16-W3

DRM

/100

Note: When ordering, please use the whole part number. Auxiliary gate and cathode leads can be ordered separately.

Outline type code: MP03 - W3A

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

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MP03TT1250

ABSOLUTE MAXIMUM CURRENT RATINGS

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

Symbol

I

LINE

Max. controllable RMS line

Parameter

current - single phase

I

V

TSM

I2t

TSM

I2t

isol

Surge (non-repetitive) on-current

2

t for fusing

I

Surge (non-repetitive) on-current

2

t for fusing

I

Isolation voltage

THERMAL AND MECHANICAL RATINGS

Symbol

Parameter

Test Conditions

Continuous 50/60Hz T

4.5 Ltr/min T

20 cycles, 50% duty cycle T

4.5 Ltr/min T

10ms half sine, T

= 50% V

V

R

= 125˚C

j

= 0

V

R

= 125˚C

j

DRM

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Test Conditions

water (in)

= 25˚C

= 40˚C

= 25˚C

= 40˚C

Min.

Max.

798

703

1410

1258

8.1

0.33X10

6.5

0.21X10

3000

Max.

6

Units

A

kA

2

A

kA

2

A

V

Units

s

2/9

R

th(j-w)

Thermal resistance - junction to water

(per thyristor)

dc, 4.5 Ltr/min

Half wave, 4.5 Ltr/min

3 Phase, 4.5 Ltr/min

T

vj

T

stg

-

Virtual junction temperature

Storage temperature range

Screw torque

Reverse (blocking)

-

Mounting - M6

Electrical connections - M4

-

Weight (nominal)

-

–40

5(44)

8(70)

-

0.175

0.185

0.195

125

-

9(80)

Refer to

˚C/kW

˚C

Nm (lb.ins)

g

drawing

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DYNAMIC CHARACTERISTICS

MP03TT1250

Symbol

I

RRM/IDRM

dV/dt

dI/dt

V

T(TO)

r

T

Parameter

Peak reverse and off-state current

Linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

Test Conditions

DRM

= 125˚C

, Tj = 125˚C

to 500A, gate source 10V, 5Ω

DRM

At V

RRM/VDRM

To 67% V

From 67% V

= 0.5µs, Tj = 125˚C

t

r

At T

vj

At T

vj

Min.

-

Max.

1000

0.93

0.67

Units

30

500

Note: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these

figures due to the impedance of the busbar from the terminal to the semiconductor.

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

V

GT

I

GT

Gate trigger voltage

Gate trigger current

Parameter

V

DRM

V

DRM

= 5V, T

Test Conditions

= 25oC

case

= 25oC

case

Max.

Units

3

150

mA

V/µs

A/µs

V

mΩ

V

mA

P

V

FGM

RGM

I

FGM

P

G(AV)

GD

FGN

GM

Gate non-trigger voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

At V

DRM Tcase

= 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 5

-

0.25

30

0.25

5

10

100

5

V

A

W

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