• Halogen and Antimony Free. “Green” Device (Note 3)
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
Adjustable to 0.8 to 12V
OUT
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
High-Side Gate Drive Boost Input. BS supplies the drive for the high-side N-Channel MOSFET a
0.01µF or greater capacitor from SW to BS to power the high side switch.
IN 2
Power Input. IN supplies the power to the IC, as well as the step-down converter switches. Drive IN
with a 4.75V to 17V power source. Bypass IN to GND with a suitably large capacitor to eliminate noise
on the input to the IC. See Input Capacitor.
Power Switching Output. SW is the switching node that supplies power to the output. Connect the
output LC filter from SW to the output load. Note that a capacitor is required from SW to BS to power
the high-side switch.
Feedback Input. FB senses the output voltage and regulates it. Drive FB with a resistive voltage
divider connected to it from the output voltage. The feedback threshold is 0.800V. See Setting the
Output Voltage.
Compensation Node. COMP is used to compensate the regulation control loop. Connect a series RC
network from COMP to GND. In some cases, an additional capacitor from COMP to GND is required.
See Compensation Components.
Enable Input. EN is a digital input that turns the regulator on or off. Drive EN high to turn on the
regulator; low to turn it off. Attach to IN with a 100k pull up resistor for automatic startup.
Soft-Start Control Input. SS controls the soft-start period. Connect a capacitor from SS to GND to set
the soft-start period. A 0.1µF capacitor sets the soft-start period to 13ms. To disable the soft-start
feature, leave SS floating.
Notes: 4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may
be affected by exposure to absolute maximum rating conditions for extended periods of time.
5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.
Supply Voltage
Switch Node Voltage
Bootstrap Voltage
Feedback Voltage -0.3V to +6.0 V
Enable/UVLO Voltage -0.3V to +6.0 V
Comp Voltage -0.3V to +6.0 V
Storage Temperature -65 to +150 °C
Junction Temperature +160 °C
Lead Temperature +260 °C
= +25°C, unless otherwise specified.)
A
-0.3 to 20
-1.0 to V
V
-0.3 to VSW +6.0
SW
IN
+0.3
V
V
V
Thermal Resistance
Symbol Parameter Rating Unit
JA
JC
Note: 6. Test condition: SO-8EP: Device mounted on FR-4 substrate (2s2p) 2"x2" PCB, with 2oz copper trace thickness and minimum recommended pad on top
layer and thermal vias to bottom layer ground plane.
Recommended Operating Conditions(Note 7) (@T
Symbol Parameter Min Max Unit
VIN
TA
Note: 7. The device function is not guaranteed outside of the recommended operating conditions.