Diodes AP6503 User Manual

C
C
%
P6503
340kHz 23V 3A SYNCHRONOUS DC/DC BUCK CONVERTER
high
Pin Assignments
( Top View )
BS
SW
GND
1
2
IN
3
4
Applications
• Gaming Consoles
• Flat Screen TV sets and Monitors
• Set Top Boxes
• Distributed power systems
• Home Audio
• Consumer electronics
• Network Systems
• FPGA, DSP and ASIC Supplies
• Green Electronics
SO-8EP
8
SS
EN
7
COMP
6
5
FB
Description
The AP6503 is a 340kHz switching frequency external compensated
synchronous DC/DC buck converter. It has integrated low R
DSON
and low side MOSFETs.
The AP6503 enables continues load current of up to 3A with
efficiency as high as 95%.
The AP6503 features current mode control operation, which enables
fast transient response times and easy loop stabilization.
The AP6503 simplifies board layout and reduces space requirements
with its high level of integration and minimal need for external
components, making it ideal for distributed power architectures.
The AP6503 is available in a standard Green SO-8EP package with
exposed PAD for improved thermal performance and is RoHS
compliant.
Features
VIN 4.7V to 23V
3A continuous Output Current, 4A Peak
V
340kHz switching frequency
Programmable Soft-Start
Enable pin
Protection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds
adjustable to 0.925 to 20V
OUT
OCP
Thermal Shutdown
.
Typical Applications Circuit
100
90
V = 5V
80
)
Y (
70
IEN
60
EFFI
50
V = 3.3V
OUT
L = 10µH
40
0123
AP6503
Document number: DS35077 Rev. 5 - 2
IN
V = 12V
IN
LOAD CURRENT (A)
Efficiency vs. Load Current
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Figure 1 Typical Application Circuit
January 2013
© Diodes Incorporated
Pin Descriptions
Pin
Number
1 BS
2 IN
3 SW
4 GND Ground (Connect the exposed pad to Pin 4).
5 FB
6 COMP
7 EN
8 SS
EP EP EP exposed thermal pad connect to Pin 4 GND
Pin
Name
High-Side Gate Drive Boost Input. BS supplies the drive for the high-side N-Channel MOSFET switch. Connect a 0.01µF or greater capacitor from SW to BS to power the high side switch.
Power Input. IN supplies the power to the IC, as well as the step-down converter switches. Drive IN with a
4.7V to 23V power source. Bypass IN to GND with a suitably large capacitor to eliminate noise on the input to the IC. See Input Capacitor.
Power Switching Output. SW is the switching node that supplies power to the output. Connect the output LC filter from SW to the output load. Note that a capacitor is required from SW to BS to power the high-side switch.c
Feedback Input. FB senses the output voltage and regulates it. Drive FB with a resistive voltage divider connected to it from the output voltage. The feedback threshold is 0.925V. See Setting the Output Voltage.
Compensation Node. COMP is used to compensate the regulation control loop. Connect a series RC network from COMP to GND. In some cases, an additional capacitor from COMP to GND is required. See Compensation Components.
Enable Input. EN is a digital input that turns the regulator on or off. Drive EN high to turn on the regulator; low to turn it off. Attach to IN with a 100k pull up resistor for automatic startup.
Soft-Start Control Input. SS controls the soft-start period. Connect a capacitor from SS to GND to set the soft-start period. A 0.1µF capacitor sets the soft-start period to 15ms. To disable the soft-start feature, leave SS floating.
Functional Block Diagram
P6503
Function
COMP
+
-
1.1V
0.3 V
0.923 V
0.9V
+
-
-
+
+
2.5V
+
-
5
FB
SS
8
6
EN
7
+
-
ERROR
AMPLIFIER
LOCKOUT
COMPARATOR
COMPARATOR
OVP
OSCILLATOR
100/340 KHz
EN OK
SHUTDOWN
RAMP
E
CLK
+
-
6uA
CURRENT
SENSE
AMPLIFIER
Logic
CURRENT
COMPARATOR
IN
INTERNAL
REGULATORS
+
-
IN < 4.10V
disable
100m
100m
5V
IN
2
BS
1
SW
3
GND
4
Figure 2 Functional Block Diagram
AP6503
Document number: DS35077 Rev. 5 - 2
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January 2013
© Diodes Incorporated
P6503
Absolute Maximum Ratings (Note 4) (@T
Symbol Parameter Rating Unit
VIN
VSW
VBS
VFB
VEN
V
COMP
TST
TJ
TL
ESD Susceptibility (Note 5)
HBM Human Body Model 3 kV
MM Machine Model 250 V
Notes: 4. Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time.
5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices.
Supply Voltage -0.3 to +26 V
Switch Node Voltage
Bootstrap Voltage
Feedback Voltage -0.3V to +6 V
Enable/UVLO Voltage -0.3V to +6 V
Comp Voltage -0.3V to +6 V
Storage Temperature -65 to +150 °C
Junction Temperature +150 °C
Lead Temperature +260 °C
= +25°C, unless otherwise specified.)
A
-1.0 to V
V
-0.3 to VSW +6
SW
IN
+0.3
V
V
Thermal Resistance (Note 6)
Symbol Parameter Rating Unit
JA
JC
Note: 6. Test condition for SO-8EP: Measured on approximately 1” square of 1 oz copper
Recommended Operating Conditions (Note 7) (@T
Symbol Parameter Min Max Unit
VIN
TA
Note: 7. The device function is not guaranteed outside of the recommended operating conditions.
Operating Ambient Temperature Range -40 +85 °C
Junction to Ambient 74 °C/W
Junction to Case 16 °C/W
= +25°C, unless otherwise specified.)
A
Supply Voltage 4.7 23 V
AP6503
Document number: DS35077 Rev. 5 - 2
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January 2013
© Diodes Incorporated
t
t
g
P6503
Electrical Characteristics (V
Symbol Parameter Test Conditions Min Typ Max Unit
IIN IIN
R
DS(ON)1
R
DS(ON)2
I
Limi
I
Limi
High-Side Switch Leakage Current
AVEA
GEA Error Amplifier Transconductance
GCS
FSW
FFB
D
MAX
TON
VFB
Feedback Overvoltage Threshold 1.1 V
V
EN_Risin
EN Lockout Threshold Voltage 2.2 2.5 2.7 V EN Lockout Hysteresis 220 mV
INUV
INUV
HYS
Soft-Start Current Soft-Start Period
TSD
Note: 8. Guaranteed by design
Shutdown Supply Current Supply Current (Quiescent) High-Side Switch On-Resistance (Note 8) 100 m Low-Side Switch On-Resistance (Note 8) 100 m HS Current Limit Minimum duty cycle 5.5 A LS Current Limit From Drain to Source 0.9 A
Error Amplifier Voltage Gain (Note 8)
COMP to Current Sense Transconductance
Oscillator Frequency Fold-back Frequency Maximum Duty Cycle Minimum On Time 130 ns Feedback Voltage
EN Rising Threshold 0.7 0.8 0.9 V
V
Vth
Under Voltage Threshold Rising
IN
VIN Under Voltage Threshold Hysteresis
Thermal Shutdown (Note 8) 160 °C
= 12V, TA = +25°C, unless otherwise specified.)
IN
VEN = 0V VEN = 2.0V, VFB = 1.0V
= 0V, VSW = 0V,
V
EN
=12V
V
SW
800 V/V
I
= ±10µA
C
2.8 A/V
V
= 0.75V
FB
V
= 0V
FB
VFB = 800mV
TA = -40°C to +85°C
3.80 4.05 4.40 V 250 mV
V
= 0V
SS
C
= 0.1µF
SS
0.3 3.0 µA
0.6 1.5 mA
0 10 A
1000 µA/V
300 340 380 kHz
0.30
fSW
90 %
900 925 950 mV
6 A 15 ms
AP6503
Document number: DS35077 Rev. 5 - 2
4 of 15
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January 2013
© Diodes Incorporated
C
O
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P6503
Typical Performance Graphs (V
0.6
0.58
0.56
0.54
0.52
0.5
QUIESCENT SUPPLY CURRENT (mA)
0.48 0 5 10 15 20 25
INPUT VOLTAGE (V)
Quiescent Supply Current vs. Input Voltage
6.2
6
5.8
5.6
5.4
= 12V, V
IN
= 3.3V, TA = +25°C, unless otherwise noted)
OUT
0.074
0.064
0.054
0.044
0.034
0.024
0.014
SHUTDOWN SUPPLY CURRENT (µA)
0.004 0 5 10 15 20 25
3.33
3.329
3.328
3.327
3.326
3.325
3.324
Shutdown Supply Current vs. Input Voltage
INPUT VOLTAGE (V)
V = 12V
IN
5.2
5
4.8
-60 -40 -20 0 20 40 60 80 100
TEMPERATURE (C)
Current Limit vs. Temperature
0.92
0.918
0.916
0.914
E (V)
0.912
LTA
0.91
K V
0.908
0.906
FEEDBA
0.904
0.902
0.9
-60 -40 -20 0 20 40 60 80 100
TEMPERATURE (°C)
Feedback Voltage vs. Temperature
3.323
OUTPUT VOLTAGE (V)
3.322
3.321
3.32
4.75 9.75 14.75 19.75 24.75
INPUT VOLTAGE (V)
Line Regulation
375
370
365
360
355
OSCILLATOR FREQUENCY (Khz)
350
TEMPERATURE (°C)
Oscillator Frequency vs. Temperature
AP6503
Document number: DS35077 Rev. 5 - 2
5 of 15
www.diodes.com
January 2013
© Diodes Incorporated
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