Diodes AP2213 User Manual

Data Sheet

500mA LOW NOISE LDO REGULATOR AP2213

General Description

The AP2213 is a 500mA output current fixed voltage
regulator which provides low noise, very low dropout
voltage (typically 350mV at 500mA), very low
standby current (1μA maximum) and excellent power
supply ripple rejection (PSRR 75dB at 100Hz) in bat­tery powered applications, such as handsets and PDAs
and in noise sensitive applications, such as RF elec­tronics.

The AP2213 features individual logic compatible
enable/shutdown control inputs, a low power shut­down mode for extended battery life, over current pro­tection, over temperature protection, as well as
reversed-battery protection.

The AP2213 has 2.5V, 3.0V and 3.3V versions.

The AP2213 is available in TO-252-2 (1), TO-252-2
(3), SOIC-8 and SOT-223 packages.

Features

· Up to 500mA Output Current

· Low Standby Current

· Low Dropout Voltage: V

· High Output Accuracy: ±1%

· Good Ripple Rejection Ability: 75dB at 100Hz

OUT

=100μA

and I

· Tight Load and Line Regulation

· Low Temperature Coefficient

· Over Current Protection

· Thermal Protection

· Reversed-battery Protection

· Logic-controlled Enable

=350mV at 500mA

DROP

Applications

· Laptop, Notebook, and Palmtop Computer

· CD-ROM, CD-R/RW, DVD Driver

· Portable Electronic

· PC Peripheral

SOIC-8TO-252-2 (1) SOT-223TO-252-2 (3)

Figure 1. Package Types of AP2213

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

1

Data Sheet

VOUT

GND

VIN

1

2

3

1

2

3

4

8

7

6

5

VOUT

GND

VIN

GND

GND

GND

BYP

EN

VIN

VOUT

GND

1

2

3

1

2

3

VIN

VOUT

GND

500mA LOW NOISE LDO REGULATOR AP2213

Pin Configuration

D Package

(TO-252-2 (1))

(TO-252-2 (3))

H Package

(SOT-223)

Figure 2. Pin Configuration of AP2213 (Top View)

Pin Description

Pin Number

TO-252-2 (1)/

TO-252-2 (3)

3 3 2 VOUT Regulated output voltage

2 5, 6, 7, 8 1 GND Ground

SOIC-8 SOT-223

Pin Name Function

M Package

(SOIC-8)

1 2 3 VIN Input Voltage

1EN

4 BYP Bypass capacitor for low noise operation

Enable input: CMOS or TTL compatible input. Logic
high=enable, logic low=shutdown

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

2

Data Sheet

+

-

Bandgap

Ref.

Current Limit

Thermal Shutdown

V

IN

BYP

EN

GND

V

OUT

500mA LOW NOISE LDO REGULATOR AP2213

Functional Block Diagram

1 (2) (3)

(4)

(1)

2 (5, 6, 7, 8) (1)

Figure 3. Functional Block Diagram of AP2213

3 (3) (2)

A (B) (C)
A for TO-252-2 (1)/(3)

B for SOIC-8
C for SOT-223

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

3

Data Sheet

500mA LOW NOISE LDO REGULATOR AP2213

Ordering Information

AP2213 -

E1: Lead Free

Circuit Type

Package

D: TO-252-2 (1)/TO-252-2 (3)
M: SOIC-8
H: SOT-223

G1: Green

TR: Tape and Reel

Blank: Tube

2.5: Fixed Output 2.5V

3.0: Fixed Output 3.0V

3.3: Fixed Output 3.3V

Package

TO-252-2 (1)/

TO-252-2 (3)

SOIC-8

SOT-223

Temperature

Range

o

-40 to 125

-40 to 125

-40 to 125

C

o

C

o

C

Lead Free Green Lead Free Green

AP2213D-2.5E1 AP2213D-2.5G1 AP2213D-2.5E1 AP2213D-2.5G1 Tube

AP2213D-2.5TRE1 AP2213D-2.5TRG1 AP2213D-2.5E1 AP2213D-2.5G1 Tape & Reel

AP2213D-3.0E1 AP2213D-3.0G1 AP2213D-3.0E1 AP2213D-3.0G1 Tube

AP2213D-3.0TRE1 AP2213D-3.0TRG1 AP2213D-3.0E1 AP2213D-3.0G1 Tape & Reel

AP2213D-3.3E1 AP2213D-3.3G1 AP2213D-3.3E1 AP2213D-3.3G1 Tube

AP2213D-3.3TRE1 AP2213D-3.3TRG1 AP2213D-3.3E1 AP2213D-3.3G1 Tape & Reel

AP2213M-2.5E1 AP2213M-2.5G1 2213M-2.5E1 2213M-2.5G1 Tube

AP2213M-2.5TRE1 AP2213M-2.5TRG1 2213M-2.5E1 2213M-2.5G1 Tape & Reel

AP2213M-3.0E1 AP2213M-3.0G1 2213M-3.0E1 2213M-3.0G1 Tube

AP2213M-3.0TRE1 AP2213M-3.0TRG1 2213M-3.0E1 2213M-3.0G1 Tape & Reel

AP2213M-3.3E1 AP2213M-3.3G1 2213M-3.3E1 2213M-3.3G1 Tube

AP2213M-3.3TRE1 AP2213M-3.3TRG1 2213M-3.3E1 2213M-3.3G1 Tape & Reel

AP2213H-2.5TRE1 AP2213H-2.5TRG1 EH13C GH13C Tape & Reel

AP2213H-3.0TRE1 AP2213H-3.0TRG1 EH13E GH13E Tape & Reel

AP2213H-3.3TRE1 AP2213H-3.3TRG1 EH13F GH13F Tape & Reel

Part Number Marking ID

Packing Type

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

4

Data Sheet

500mA LOW NOISE LDO REGULATOR AP2213

Absolute Maximum Ratings (Note 1)

Parameter Symbol Value Unit

Supply Input Voltage V

Enable Input Voltage V

Power Dissipation P

Lead Temperature (Soldering, 10sec) T

LEAD

Junction Temperature T

Storage Temperature T

IN

EN

D

J

STG

Internally Limited (Thermal Protection) W

20 V

20 V

260

150

-65 to 150

o

C

o

C

o

C

ESD (Machine Model) ESD 300 V

TO-252-2 (1)/TO-252-2 (3) 90

o

Thermal Resistance (No Heatsink)

θ

JA

SOIC-8 160

C/W

SOT-223 108

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max­imum Ratings" for extended periods may affect device reliability.

Recommended Operating Conditions

Parameter Symbol Min Max Unit

Supply Input Voltage V

Enable Input Voltage V

Operating Junction Temperature T

IN

EN

J

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

5

2.5 18 V

018V

-40 125

o

C

Data Sheet

500mA LOW NOISE LDO REGULATOR AP2213

Electrical Characteristics
AP2213-2.5 Electrical Characteristics

VIN=3.5V, I

otherwise specified.

unless

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage Accuracy

Output Voltage
Temperature Coefficient
(Note 3)

Line Regulation

Load Regulation
(Note 4)

Dropout Voltage (Note 5)

Standby Current

Ground Pin Current
(Note 6)

=100μA, CIN=1.0μF, C

OUT

ΔV

ΔV

(ΔV

OUT/VOUT

=2.2μF, VEN≥

OUT

OUT/VOUT

/ΔT 120

OUT

2.0V, TJ=25oC,

Bold

typeface applies over -40oC≤TJ≤

Variation from specified
V

OUT

)/ΔT 48

V

RLINE

V

RLOAD

V

DROP

I

STD

I

GND

VIN=3.5V to 13.2V

I

=0.1mA to 500mA

OUT

I

=100μA

OUT

I

=50mA

OUT

I

=100mA

OUT

=150mA

I

OUT

I

=300mA

OUT

=500mA

I

OUT

VEN≤0.4V (shutdown) 0.01 1

V

≤0.18V (shutdown) 5

EN

VEN≥2.0V, I

≥2.0V, I

V

EN

VEN≥2.0V, I

≥2.0V, I

V

EN

≥2.0V, I

V

EN

OUT

OUT

OUT

OUT

OUT

=100μA

=50mA

=150mA

=300mA

=500mA

-1 1

-2 2

1.5 4.5

17

15 50

110 150

230

140 250

300

165 275

350

250 400

500

350 600

700

100 150

180

350 600

800

1.3 1.9

410

11 20

125oC (Note 2),

%

μV/

ppm/

12

17

mV

mV

70

mV

μA

μA

2.5

mA

15

28

o

C

o

C

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

6

Data Sheet

HznV /

500mA LOW NOISE LDO REGULATOR AP2213

Electrical Characteristics (Continued)
AP2213-2.5 Electrical Characteristics

VIN=3.5V, I

unless

otherwise specified.

Parameter Symbol Conditions Min Typ Max Unit

Ripple Rejection PSRR f=100Hz, I

Current Limit I

Output Noise

=100μA, CIN=1.0μF, C

OUT

=2.2μF, VEN≥

OUT

LIMIT

e

no

2.0V, TJ=25oC,

OUT

V

=0V 700 1000 mA

OUT

I

=50mA, C

OUT

100pF from BYP to GND

Bold

typeface applies over -40oC≤TJ≤

=100μA75dB

=2.2μF,

OUT

260

125oC (Note 2),

Enable Input Logic-low
Voltage

Enable Input Logic-high Voltage V

Enable Input Logic-low Current

Enable Input Logic-high Current

V

I

IL

I

IH

Regulator shutdown

IL

Regulator enabled 2.0 V

IH

VIL≤0.4V 0.01 1

≤0.18V 2

V

IL

VIL≥2.0V 5 20

V

≥2.0V 25

IL

0.4

0.18

V

μA

μA

TO-252-2 (1)/TO-252-2 (3) 20

Thermal Resistance

θ

JC

SOIC-8 45

o

C/W

SOT-223 31

Note 2: Specifications in bold type are limited to

-40oC≤TJ≤

125oC. Limits over temperature are guaranteed by design, but not

tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.

Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T

o

40

C≤TJ≤

125oC)

below its nominal value measured at 1V differential.

=25oC) or 2% (-

J

Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

7

Data Sheet

500mA LOW NOISE LDO REGULATOR AP2213

Electrical Characteristics (Continued)
AP2213-3.0 Electrical Characteristics

VIN=4V, I

unless

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage Accuracy

Output Voltage
Temperature Coefficient
(Note 3)

Line Regulation

Load Regulation
(Note 4)

Dropout Voltage (Note 5)

Standby Current

Ground Pin Current
(Note 6)

=100μA, CIN=1.0μF, C

OUT

otherwise specified.

ΔV

ΔV

(ΔV

OUT/VOUT

=2.2μF, VEN≥

OUT

OUT/VOUT

/ΔT 120

OUT

2.0V, TJ=25oC,

Bold

typeface applies over -40oC≤TJ≤

Variation from specified
V

OUT

)/ΔT 40

V

RLINE

V

RLOAD

V

DROP

I

STD

I

GND

VIN=4V to 13.2V

I

=0.1mA to 500mA

OUT

I

=100μA

OUT

I

=50mA

OUT

=100mA

I

OUT

=150mA

I

OUT

=300mA

I

OUT

=500mA

I

OUT

VEN≤0.4V (shutdown) 0.01 1

V

≤0.18V (shutdown) 5

EN

VEN≥2.0V, I

≥2.0V, I

V

EN

VEN≥2.0V, I

≥2.0V, I

V

EN

VEN≥2.0V, I

OUT

OUT

OUT

OUT

OUT

=100μA

=50mA

=150mA

=300mA

=500mA

-1 1

-2 2

1.5 4.5

18

15 50

110 150

230

140 250

300

165 275

350

250 400

500

350 600

700

100 150

180

350 600

800

1.3 1.9

2.5

410

11

125oC (Note 2),

%

μV/

ppm/

12

17

mV

mV

70

mV

μA

μA

mA

15

20

28

o

C

o

C

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

8

Data Sheet

HznV /

500mA LOW NOISE LDO REGULATOR AP2213

Electrical Characteristics (Continued)
AP2213-3.0 Electrical Characteristics

VIN=4V, I

unless

Parameter Symbol Conditions Min Typ Max Unit

Ripple Rejection PSRR f=100Hz, I

Current Limit I

Output Noise

=100μA, CIN=1.0μF, C

OUT

otherwise specified.

=2.2μF, VEN≥

OUT

LIMIT

e

no

2.0V, TJ=25oC,

V

=0V 700 1000 mA

OUT

I

=50mA, C

OUT

100pF from BYP to GND

Bold

typeface applies over -40oC≤TJ≤

=100μA75dB

OUT

=2.2μF,

OUT

260

125oC (Note 2),

Enable Input Logic-low
Voltage

Enable Input Logic-high Voltage V

Enable Input Logic-low Current

Enable Input Logic-high Current

V

IL

IH

I

IL

I

IH

Regulator shutdown

Regulator enabled 2.0 V

VIL≤0.4V 0.01 1

≤0.18V 2

V

IL

VIL≥2.0V 5 20

V

≥2.0V 25

IL

0.4

0.18

V

μA

μA

TO-252-2 (1)/TO-252-2 (3) 20

Thermal Resistance

θ

JC

SOIC-8 45

o

C/W

SOT-223 31

Note 2: Specifications in bold type are limited to

-40oC≤TJ≤

125oC. Limits over temperature are guaranteed by design, but not

tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.

Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T

o

40

C≤TJ≤

125oC)

below its nominal value measured at 1V differential.

=25oC) or 2% (-

J

Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

9

Data Sheet

500mA LOW NOISE LDO REGULATOR AP2213

Electrical Characteristics (Continued)
AP2213-3.3 Electrical Characteristics

VIN=4.3V, I

otherwise specified.

unless

Parameter Symbol Conditions Min Typ Max Unit

Output Voltage Accuracy

Output Voltage
Temperature Coefficient
(Note 3)

Line Regulation

Load Regulation
(Note 4)

Dropout Voltage (Note 5)

Standby Current

Ground Pin Current
(Note 6)

=100μA, CIN=1.0μF, C

OUT

ΔV

(ΔV

=2.2μF, VEN≥

OUT

OUT/VOUT

ΔV

/ΔT 120

OUT

OUT/VOUT

V

V

V

)/ΔT 36.3

RLINE

RLOAD

DROP

I

STD

I

GND

2.0V, TJ=25oC,

Bold

typeface applies over -40oC≤TJ≤

Variation from specified
V

OUT

VIN=4.3V to 13.2V

I

=0.1mA to 500mA

OUT

I

=100μA

OUT

I

=50mA

OUT

I

=100mA

OUT

I

=150mA

OUT

I

=300mA

OUT

I

=500mA

OUT

VEN≤0.4V (shutdown) 0.01 1

V

≤0.18V (shutdown) 5

EN

VEN≥2.0V, I

V

≥2.0V, I

EN

≥2.0V, I

V

EN

V

≥2.0V, I

EN

≥2.0V, I

V

EN

OUT

OUT

OUT

OUT

OUT

=100μA

=50mA

=150mA

=300mA

=500mA

-1 1

-2 2

1.5 4.5

19

15 50

110 150

230

140 250

300

165 275

350

250 400

500

350 600

700

100 150

180

350 600

800

1.3 1.9

410

11

125oC (Note 2),

%

μV/

ppm/

12

18

mV

mV

70

mV

μA

μA

2.5

mA

15

20

28

o

C

o

C

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

10

Data Sheet

HznV /

500mA LOW NOISE LDO REGULATOR AP2213

Electrical Characteristics (Continued)
AP2213-3.3 Electrical Characteristics

VIN=4.3V, I

unless

otherwise specified.

Parameter Symbol Conditions Min Typ Max Unit

Ripple Rejection PSRR f=100Hz, I

Current Limit I

Output Noise

=100μA, CIN=1.0μF, C

OUT

=2.2μF, VEN≥

OUT

LIMIT

e

no

2.0V, TJ=25oC,

OUT

V

=0V 700 1000 mA

OUT

I

=50mA, C

OUT

100pF from BYP to GND

Bold

typeface applies over -40oC≤TJ≤

=100μA75dB

=2.2μF,

OUT

260

125oC (Note 2),

Enable Input Logic-low
Voltage

Enable Input Logic-high Voltage V

Enable Input Logic-low Current

Enable Input Logic-high Current

V

IL

IH

I

IL

I

IH

Regulator shutdown

Regulator enabled 2.0 V

VIL≤0.4V 0.01 1

≤0.18V 2

V

IL

VIL≥2.0V 5 20

V

≥2.0V 25

IL

0.4

0.18

V

μA

μA

TO-252-2 (1)/TO-252-2 (3) 20

Thermal Resistance

θ

JC

SOIC-8 45

o

C/W

SOT-223 31

Note 2: Specifications in bold type are limited to

-40oC≤TJ≤

125oC. Limits over temperature are guaranteed by design, but not

tested in production.
Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature
range.
Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load
regulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.

Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (T

o

40

C≤TJ≤

125oC)

below its nominal value measured at 1V differential.

=25oC) or 2% (-

J

Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
supply is the sum of the load current plus the ground pin current.

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

11

Data Sheet

-60 -40 -20 0 20 40 60 80 100 120 140

2.484

2.486

2.488

2.490

2.492

2.494

2.496

2.498

2.500

2.502

Output Voltage (V)

Junction Temperature (oC)

AP2213-2.5
V

IN

=3.5V, I

OUT

=10mA

C

IN

=1μF, C

OUT

=2.2μF

-60 -40 -20 0 20 40 60 80 100 120 140

50

100

150

200

250

300

350

400

450

500

550

600

650

700

750

800

850

Dropout Voltage (mV)

Junction Temperature (oC)

I

OUT

=50mA

I

OUT

=100mA

I

OUT

=150mA

I

OUT

=300mA

I

OUT

=500mA

CIN=1μF, C

OUT

=2.2μF

0 100 200 300 400 500

0

1

2

3

4

5

6

7

8

9

10

Ground Pin Current (mA)

Output Current (mA)

TA=25oC

C

IN

=1μF, C

OUT

=2.2μF

-60 -40 -20 0 20 40 60 80 100 120 140

0

2

4

6

8

10

12

14

16

18

20

Ground Pin Current (mA)

Junction Temperature (0C)

I

OUT

=50mA

I

OUT

=100mA

I

OUT

=150mA

I

OUT

=300mA

I

OUT

=500mA

AP2213-2.5
V

IN

=3.5V, CIN=1μF, C

OUT

=2.2μF

500mA LOW NOISE LDO REGULATOR AP2213

Typical Performance Characteristics

Figure 4. Output Voltage vs. Junction Temperature Figure 5. Dropout Voltage vs. Junction Temperature

Figure 6. Ground Pin Current vs. Output Current Figure 7. Ground Pin Current vs. Junction Temperature

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

12

Data Sheet

-60 -40 -20 0 20 40 60 80 100 120 140

2

3

4

5

6

7

8

9

10

11

12

13

VEN=1.8V

VEN=2V

VEN=3V

VEN=3.7V

Enable Current (μA)

Junction Temperature (oC)

AP2213-2.5, VIN=3.5V

C

IN

=1μF, C

OUT

=2.2μF, I

OUT

=100μA

-60 -40 -20 0 20 40 60 80 100 120 140

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

VEN=logic high

VEN=logic low

Enable Voltage (V)

Junction Temperature (oC)

AP2213-2.5
C

IN

=1μF, C

OUT

=2.2μF

I

OUT

=100μA, VIN=3.5V

10 10 0 1k 10k 100k 1M 10M

100

10

1

0.1

0.01

0.001

Frequency (Hz)

AP2213-2.5
I

OUT

=10mA, CIN=1μF, C

OUT

=2.2μF

V

IN

=3.5V, C

BYP

=100pF

0.0001

Output Noise ( )

500mA LOW NOISE LDO REGULATOR AP2213

Typical Performance Characteristics (Continued)

Figure 8. Enable Current vs. Junction Temperature

V/ Hz

μ

Figure 10. Output Noise vs. Frequency

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

Figure 9. Enable Voltage vs. Junction Temperature

5.5

4.5

3.5

(1V/Div)

IN

V

2.5

AP2213-2.5

10

0

(10m V/Div)

OUT

-10

ΔV

-20

Time (200μs/Div)

Figure 11. Line Transient

(Conditions: V

C

=3.4 to 4.4V, VEN=2V, I

IN

=100pF, C

BYP

OUT

=2.2μF)

OUT

=100μA,

13

Data Sheet

10 100 1k 10k 100k 1M

0

10

20

30

40

50

60

70

80

90

100

PSRR (dB)

Frequency (Hz)

AP2213-2.5
VIN=3.5V, V

RIPPLE

=1V

PP

I

OUT

=10mA, C

OUT

=2.2μF

25 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Power Dissipation (W)

Ambient Temperature (oC)

TO-252-2(1)/(3) Package
No Heatsink

500mA LOW NOISE LDO REGULATOR AP2213

Typical Performance Characteristics (Continued)

1

0.5

0

(0.5A/Div)

-0.5

OUT

I

(10mV/D iv)

OUT

ΔV

0

-10

-20

-30

10mA

Time (200μs/Div)

Figure 12. Load Transient

(Conditions: VIN=3.5V, C

I

=10 to 500mA, CIN=1μF, C

OUT

AP2213-2.5

=100pF, VEN=2V,

BYP

=2.2μF)

OUT

3

2

1

(1V/Div)

EN

0

V

2

1

(1V/Div)

OUT

0

V

-1

Time (40μs/Div)

Figure 13. VEN vs. V

(Conditions: VEN=0 to 2V, VIN=3.5V, I

C

=open, CIN=1μF, C

BYP

OUT

OUT

AP2213-2.5

=30mA,

OUT

=2.2μF)

Figure 14. PSRR vs. Frequency

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

Figure 15. Power Dissipation vs. Ambient Temperature

14

Data Sheet

0 50 100 150 200 250 300 350 400 450 500

0.01

0.1

1

10

100

1000

ESR (Ω)

Output Current (mA)

C

OUT

=1μF

No Bypass Capacitor

Stable Area

0 50 100 150 200 250 300 350 400 450 500

0.01

0.1

1

10

100

1000

ESR (Ω)

Output Current (mA)

C

OUT

=2.2μF

No Bypass Capacitor

Stable Area

25 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Power Dissipation (W)

Ambient Temperature (oC)

SOIC-8 Package
No Heatsink

0 50 100 150 200 250 300 350 400 450 500

0.01

0.1

1

10

100

1000

ESR (Ω)

Output Current (mA)

C

OUT

=4.7μF

No Bypass Capacitor

Stable Area

500mA LOW NOISE LDO REGULATOR AP2213

Typical Performance Characteristics (Continued)

Figure 16. Power Dissipation vs. Ambient Temperature

Figure 18. ESR vs. Output Current

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

Figure 17. ESR vs. Output Current

Figure 19. ESR vs. Output Current

15

Data Sheet

BYP

100pF

EN

GND

AP2213-2.5

VIN=3.5V

V

OUT

=2.5V

2.2μF1μF

V

IN

V

IN

V

OUT

V

OUT

C

OUT

C

BYP

C

IN

500mA LOW NOISE LDO REGULATOR AP2213

Typical Application

Figure 20. Typical Application of AP2213 (Note 7)

Note 7: Dropout voltage is 350mV when TA=25oC. In order to obtain a normal output voltage, V

+0.35V is the minimum

OUT

input voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage

+1V to 18V. For AP2213-2.5 version, its input voltage can be set from 3.5V(V

is V

OUT

+1V) to 18V.

OUT

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

16

Data Sheet

500mA LOW NOISE LDO REGULATOR AP2213

Application Information

Input Capacitor

A 1μF minimum capacitor is recommended to be
placed between V

and GND.

IN

Output Capacitor

It is required to prevent oscillation. 1μF minimum is
recommended when C

mum is recommended when C

is unused. 2.2μF mini-

BYP

is 100pF. The out-

BYP

put capacitor may be increased to improve transient
response.

Noise Bypass Capacitor

Bypass capacitor is connected to the internal voltage
reference. A small capacitor connected from BYP to
GND make this reference quiet, resulting in a
significant reduction in output noise, but the ESR
stable area will be narrowed. In order to keep the
output stability, it is recommended to use the bypass
capacitor no more than 100pF.

The start-up speed of the AP2213 is inversely
proportional to the value of reference bypass
capacitor. In some cases, if output noise is not a
major concern and rapid turn-on is necessary, omit
C

and leave BYP open.

BYP

ture must be within the range specified under abso­lute maximum ratings to avoid thermal shutdown.
To determine if the power dissipated in the regulator
reaches the maximum power dissipation (see figure
16, 17), using:
T

= PD*θJA + T

J

PD=(VIN-V

Where: TJ≤T

ings for the junction temperature; V

A

)*I

OUT

OUT+VIN*IGND

, T

J(max)

is absolute maximum rat-

J(max)

IN*IGND

can be

ignored due to its small value.

T

is 150oC, θJA is 90oC/W for TO-252-2 (1)/

J(max)

TO-252-2 (3) package and 160

o

C/W for SOIC-8

package.

Example: For 2.5V version packaged in SOIC-8,

I

=500mA, TA=50oC, V

OUT

o

(150

C-50oC)/(0.5A*160oC/W)+2.5V=3.75V

IN(Max)

is:

Therefore, for good performance, please make sure
that input voltage is less than 3.75V without heatsink

when T

=50oC.

A

Power Dissipation

Thermal shutdown may take place if exceeding the
maximum power dissipation in application. Under all
possible operating conditions, the junction tempera-

Dec. 2012 Rev. 2. 0

BCD Semiconductor Manufacturing Limited

17

Data Sheet

1.350(0.053)

1.650(0.065)

0.600(0.024)

0.900(0.035)

4.500(0.177)

4.700(0.185)

3°

4°

3.800REF(0.150REF)

4.800(0.189)

6.500(0.256)

4.300(0.169)

5.400(0.213)

1.400(0.055)

1.780(0.070)

0.000(0.000)

0.127(0.005)

0.450(0.018)

0.580(0.023)

2.300TYP

9.500(0.374)

9.900(0.390)

0.700(0.028)

0.900(0.035)

0.500(0.020)

0.700(0.028)

5.200(0.205)

5.400(0.213)

6.450(0.254)

6.650(0.262)

2.550(0.100)

2.900(0.114)

5.450(0.215)

6.250(0.246)

2.200(0.087)

2.400(0.094)

5°

5°

8

°

0.450(0.018)

0.580(0.023)

500mA LOW NOISE LDO REGULATOR AP2213

Mechanical Dimensions

Unit: mm(inch)TO-252-2 (1)

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

18

Data Sheet

1.29±0.1

2.900REF

1

.400(0.05

5

)

1

.700(0.06

7

)

0.470(0. 019)

0.600(0.024)

5

9

0

8

9.800(0.386)

10.400(0.409)

2.200(0.087)

2.380(0. 094)

0.900(0.035)

1.100(0. 043)

4.700REF

6.500(0. 256)

6.700(0. 264)

5.130(0.202)

5.460(0.215)

0.150(0.006)

0.750(0.030)

6.000(0.236 )

6.200(0.244 )

0.720(0.0 28)

0.850( 0. 033)

2.286(0. 090)
BSC

0.720(0.028)

0.900(0. 035)

0.900(0.035)

1.250(0.049)

1.800REF

8

0

0.600(0.

0

24)

1.000(0.039)

7

3

9

5

5.250REF

Option 1

Option 2

500mA LOW NOISE LDO REGULATOR AP2213

Mechanical Dimensions (Continued)

Unit: mm(inch)TO-252-2 (3)

Dec. 2012 Rev. 2. 0

19

BCD Semiconductor Manufacturing Limited

Data Sheet

0

°

8

°

1°
5°

R

0

.

1

5

0

(

0

.

0

0

6

)

R0.150(0.006)

1.000(0.039)

0.330(0.013)

0.510(0.020)

1.350(0.053)

1.750(0.069)

0.100(0.004)

0.300(0.012)

0.900(0.035)

0.800(0.031)

0.200(0.008)

3.800(0.150)

4.000(0.157)

7

°

7

°

2

0

:

1

D

1.270(0.050)

TYP

0.190(0.007)

0.250(0.010)

8

°

D

5.800(0.228)

6.200(0.244)

0.675(0.027)

0.725(0.029)

0.320(0.013)

8

°

0.450(0.017)

0.800(0.031)

4.700(0.185)

5.100(0.201)

Note: Eject hole, oriented hole and mold mark is optional.

500mA LOW NOISE LDO REGULATOR AP2213

Mechanical Dimensions (Continued)

SOIC-8 Unit: mm(inch)

φ

φ

Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited

20

Data Sheet

3.300(0.130)

3.700(0.146)

6.700(0.264)

7.300(0.287)

2.900(0.114)

3.100(0.122)

0.610(0.024)

0.810(0.032)

2.300(0.091)

TYP

6.300(0.248)

6.700(0.264)

1.750(0.069)

TYP

4.500(0.177)

4.700(0.185)

0.020(0.001)

0.100(0.004)

1.520(0.060)

1.800(0.071)

1.500(0.059)

1.700(0.067)

0

.

2

5

0

(

0

.

0

1

0

)

0

.3

5

0

(

0

.

0

1

4

)

0.250(0.010)

0°

10°

0.900(0.035)

MIN

500mA LOW NOISE LDO REGULATOR AP2213

Mechanical Dimensions (Continued)

SOT-223 Unit: mm(inch)

Dec. 2012 Rev. 2. 0

21

BCD Semiconductor Manufacturing Limited

BCD Semiconductor Manufacturing Limited

IMPORTANT NOTICE

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or

other rights nor the rights of others.

other rights nor the rights of others.

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- Headquarters

BCD Semiconductor Manufacturing Limited

BCD Semiconductor Manufactur ing Limited

- Wafer Fab

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Tel: [phone], Fax: [phone]

800, Yi Shan Road, Shanghai 200233, China
Tel: [phone], Fax: [phone]

REGIONAL SALES OFFICE

Shenzhen Office

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Shenzhen Office

Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office

China

Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office

Tel: [phone]

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- Wafer Fab

BCD Semiconductor Manufacturing Limited

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.

- IC Design Group

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Tel: [phone], Fax: [phone]

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BCD Semiconductor (Taiwan) Company Limited

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Tai wan

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BCD Semiconductor Corp.

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BCD Semiconductor Corporation

CA 94544, USA

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