Datasheet VNS1NV04D Datasheet (SGS Thomson Microelectronics)

®

VNS1NV04D

“OMNIFET II”:

FULLY AUTOPROTECTED POW ER M OSF ET

TYPE R

DS(on)

I

lim

V

clamp

VNS1NV04D 250 mΩ (*) 1.7 A (*) 40 V (*)

(*) Per each device

n

LINEAR CURRENT LIMITATION

n

THERMAL SHUT DOWN

n

SHORT CIRCUIT PROTECTION

n

INTEGRATED CLAMP

n

LOW CURRENT DRAWN FRO M INPUT PIN

n

DIAGNOSTIC FEEDBACK THROUGH INPUT

PIN

n

ESD PROTECTION

n

DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

n

COMPATIBLE WITH STANDARD POWER

MOSFET

DESCRIPTION

The VNS1NV04D is a device formed by two
monolithic OMNIFET II chips housed in a
standard SO-8 package. The OMNIFET II are
designed in STMicroelectronics VIPower M0-3

BLOCK DIAGRAM

SO-8

Technology: they are int ended for repl acement of
standard Power MOSFETS from DC up to 50KHz
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protects
the chip in harsh environments.
Fault feedback ca n be dete c ted by mo nitori ng the
voltage at the input pin.

INPUT1

GATE

CONTROL

OVER

TEMPERATURE

OVERVOLTAGE

CLAMP

LINEAR

CURRENT

LIMITER

DRAIN1

SOURCE1

DRAIN2

SOURCE2

OVERVOLTAGE

CLAMP

LINEAR

CURRENT

LIMITER

GATE

CONTROL

OVER

TEMPERATURE

INPUT2

Februa ry 2003 1/14

1

VNS1NV04D

ABSOLUTE MAXIMUM RATI NG

Symbol Parameter Value Unit

V

V

I

R

IN MINn

I
I

V

ESD1

V

ESD2

P

T

DSn

INn

INn

Dn
Rn

T
T

stg

Drain-source Voltage (V
Input Vol tage Internally Clamp ed V
Input Current +/-20 mA
Minimum I nput Series Impedance 330 Ω
Drain Current Internally Limited A
Reverse DC Output Current -3 A
Electros tatic Discharge (R=1.5KΩ, C=100pF) 4000 V
Electros tatic Discharge on output pins only (R=330Ω, C=150pF) 16500 V
Total Dissipation at Tc=25°C 4 W

tot

Operating Junction Temperature Internally limited °C

j

Case Operating Temperature Internally limited °C

c

Storage Temperature -55 to 150 °C

CONNECTION DIAGRAM (TO P VI EW)

=0V) Intern ally Clamped V

INn

SOURCE 1
INPUT 1
SOURCE 2

INPUT 2

CURRENT AND VOLTAGE CONV ENTIONS

I

IN2

R

IN1

INPUT 1

R

IN2

INPUT 2

SOURCE 1

I

IN1

V

IN1

V

IN2

1

4

8

5

DRAIN 1

DRAIN 2

SOURCE 2

DRAIN 1

DRAIN 1
DRAIN 2
DRAIN 2

I

D1

I

D2

V

DS1

V

DS1

2/14

1

VNS1NV04D

THERMAL DATA

Symbol Parameter Value Unit

R

thj-lead

R

thj-amb

(*) When mounted on a standard s ingle-sided FR4 boar d with 50mm

channel.

ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)

(Per each device)

OFF

Symbol Parameter Test Conditions Min Typ Max Unit

V

CLAMP

V

CLTH

V

INTH

I

ISS

V

INCL

I

DSS

Ther m al Re s i st an ce Junction-lead (per channe l ) MAX 30 °C/W

Thermal Resistance Junction-ambient MAX 80(*) °C/W

2

of Cu (at least 35 µm thick) connected to all DRAIN pins of the relative

Drain-source Clamp
Voltage
Drain-source Clamp

Threshold Voltage

V

=0V; ID=0.5A 40 45 55 V

IN

VIN=0V; ID=2mA 36 V

Input Thre shold Voltage VDS=VIN; ID=1mA 0.5 2.5 V
Supply Current from Input

Pin
Input-Source Clamp
Voltage

Zero Input Voltage Drain
Current (VIN=0V)

VDS=0V; VIN=5V 100 150 µA
IIN=1mA

I

=-1mA

IN

=13V; VIN=0V; Tj=25°C

V

DS

V

=25V; VIN=0V

DS

6

-1.0

6.8 8

-0.3
30
75

V
V

µA
µA

ON

Symbol Parameter Test Conditions Min Typ Max Unit

R

DS(on)

Static Drain-source On
Resistance

=5V; ID=0.5A; Tj = 25°C

V

IN

V

=5V; ID=0.5A

IN

250
500

mΩ
mΩ

3/14

1

VNS1NV04D

ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)

DYNAMIC

Symbol Parameter Test Conditions Min Typ Max Unit

gfs (*)
C

OSS

SWITCHING

Symbol Parameter Test Conditi ons Min Typ Max U nit

t

d(on)

t

t

d(off)

t

t

d(on)

t

t

d(off)

t

(dI/dt)

Q

Forward
Transconductanc e

VDD=13V; ID=0.5A 2 S

Output Capacitance VDS=13V; f=1MHz; VIN=0V 90 pF

Turn-on Delay Time
Rise Time 170 500 ns

r

Turn-off Delay Time 350 1000 ns
Fall Time 200 600 ns

f

Turn-on Delay Time
Rise Time 1.3 4.0 µs

r

Turn-off Delay Time 1.8 5.5 µs
Fall Time 1.2 4.0 µs

f

Turn-on Current Slope

on

Total Input Charge

i

=15V; ID=0.5A

V

DD

V

=5V; R

gen

gen=RIN MINn

(see figure 1)

=15V; ID=0.5A

V

DD

V

gen

=5V; R

gen

=2.2K Ω

(see figure 1)

=15V; ID=1.5A

V

DD

V

=5V; R
V
I

gen

gen
DD

gen=RIN MINn

=12V; ID=0.5A; VIN=5V
=2.13mA (see figure 5)

=330Ω

=330Ω

70 200 ns

0.25 1.0 µs

5.0 A/µs

5.0 nC

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min Typ Max Unit

(*) Forward On Vol tage ISD=0.5A; VIN=0V 0.8 V

V

SD

Q

I

RRM

t

Reverse Recovery Time ISD=0.5A; dI/dt=6A/µs

rr

Reverse Recovery Charge 100 µC

rr

Reverse Recovery Current 0.75 A

V

=30V; L= 20 0 µ H

DD

(see test circuit, figure 2)

205 ns

PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)

Symbol Parameter Test Conditions Min Typ Max Unit

I

lim

t

dlim

T

T

I

E

(*) Pulsed: Pu ls e duration = 300µs, duty c y c le 1.5%

Drain Current Limit VIN=5V; VDS=13V 1.7 3.5 A

=5V; VDS=13V

Step Response Current
Limit

Overtemperature

jsh

Shutdown

Overtemperature Reset 135 °C

jrs

Fault Sink Current VIN=5V; VDS=13V; Tj=T

gf

Sing l e Pu lse

as

Avala nche Energy

V

IN

starti ng T
V

IN

=25°C; VDD=24V

j

=5V R

gen=RIN MINn

(see figures 3 & 4)

jsh

=330Ω; L=50mH

2.0 µ s

150 175 200 °C

10 15 20 mA

55 mJ

4/14

2

VNS1NV04D

PROTECTION FEATURES

During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.

The device then behaves like a standard power
MOSFET and can be used as a switch from DC to

50KHz. The only difference from the user’s
standpoint is that a small DC current I
100µA) flows into the INPUT pin in order to supply

ISS

(typ.

the internal circuitry.
The de vice integrates :

- OVERVOLTAGE CLAMP PROTECTION:
internally set at 45V, along with the rugged
avalanche characteristics o f the Power MOSFET
stage giv e this device unrivall ed ruggedne ss and
energy handl ing capability. This feat ure is mainly
important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current ID to I
voltage. When the current limiter is active, the

whatever the INPUT pin

lim

device operates in the linear region, so power
dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
junction temperature may reach the
overtemperature threshold T

jsh

.

- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing the
chip temperature and are not dependent on the
input voltage. The location of the sensi ng eleme nt
on the chip in the power st age ar ea ensures f ast,
accurate detection of the junction temperature.
Overtemperature cutout occurs in the range 150 to
190 °C, a typical value being 170 °C. The device is
automatically restarted when the chip temperature
falls of about 15°C below shut-down temperature.

- STATUS FEEDBACK: in the case of an
overtemperature fault condition (Tj > T
device tries to sink a diagnostic current Igf thro ug h

jsh

), the

the INPUT pin in order to indicate fault condition. If
driven from a l ow impedance sou rce, this curre nt
may be used in orde r to warn the contr ol circ uit of
a device shut down. If the drive impeda nc e is h i gh
enough so that the INPUT pin dri ver is not abl e to
supply the current Igf, the INPUT pin will fall to 0V.

This will not however affect the device
operation: no requirement is put on the current
capability of t he IN PUT pin dr ive r e xcep t t o b e
able to supply the normal operation drive
current I

ISS

.

Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.

5/14

1

VNS1NV04D

Figure 1: Switching Time Test Circuit for Resistive Load

I

D

90%

V

D

R

gen

V

gen

t

r

t

V

gen

d(on) t

10%

Figure 2: Test Circu it for Diode Recovery Times

A

D

I

OMNIFET

S

330Ω

B

R

FAST
DIODE

gen

d(off)

I

t

f

A

B

OMNIFET

L=100uH

D

t

t

V

DD

6/14

1

V

gen

S

8.5 Ω

VNS1NV04D

Figure 3: Unclamped Inductive Load Test Circuits

R

V

IN

P

GEN

W

Figure 5: Input Charge Test Circuit

IN

V

GEN

Figure 4: Unclamped Inductive Waveforms

ND8003

7/14

1

1

VNS1NV04D

Source-Drain Diode Forward Characteristics

Vsd (mV)

1000

950

Vin=0V

900

850

800

750

700

0 2 4 6 8 101214

Id (A)

Derating Curve

Voltage

Static Drain Source On Resistance

Rds(on) (ohms)

4.5

4

3.5

3

2.5

2

1.5

1

0.5

0

Vin=2.5V

0 0.05 0.1 0.15 0.2 0.25 0.3

Tj=-40ºC

Tj=25ºC

Tj=150ºC

Id(A)

Static Drain-Source On resistance Vs. Input
Voltage

Rds(on) (mohms)

500

450

400

350

300

250

200

150

100

50

0

33.544.555.566.57

Id=0.5A

Tj=150ºC

Tj=25ºC

Tj=-40ºC

Vin(V)

TransconductanceStatic Drain-Source On resistance Vs. Input

Rds(on) (mohms)

500

Tj=150ºC

450

400

350

300

Tj=25ºC

250

200

Tj=-40ºC

150

100

50

0

3 3.5 4 4.5 5 5.5 6 6.5

Vin(V)

8/14

1111

Id=1.5A
Id=1A

Id=1.5A
Id=1A

Id=1.5A
Id=1A

Gfs (S)

6

5.5
5

4.5
4

3.5
3

2.5
2

1.5

1

0.5
0

Vds=13V

0 0.25 0.5 0.75 1 1.25 1.5 1.75 2

Tj=-40ºC

Tj=25º C

Tj=150ºC

Id(A)

VNS1NV04D

Static Drain-Source On Resistance Vs. Id

Rds(on) (mohms)

500

450

400

350

300

250

200

150

100

50

0

0 0.25 0.5 0.75 1 1.25 1.5 1.75 2

Tj=150ºC

Tj=25ºC

Tj=-40ºC

Vin=3.5V

Vin=5V

Vin=3.5V

Vin=5V

Vin=3.5V

Vin=5V

Id(A)

Turn On Current Slope

di/dt(A/us)

6

5

4

Vin=5V

Vdd=15V

Id=1.5A

Transfer Characteristics

Idon(A)

2.25

2

Vds=13.5V

1.75

1.5

1.25

1

Tj=150ºC

0.75

0.5

0.25

0

1.5

1.7522.25

2.5

2.7533.25

Turn On Current Slope

di/dt(A/us)

1.4

1.2

1

Tj=-40ºC

Vin(V)

3.5

3.7544.25

Vin=3.5V
Vdd=15V

Id=1.5A

Tj=25ºC

4.5

4.75

5

3

2

1

0

0 500 1000 1500 2000 2500

Rg(ohm)

Input Voltage Vs. Input Charge

Vin (V)

6

5

4

3

2

1

0

Vds=12V

Id=0.5A

0123456

Qg (nC)

0.8

0.6

0.4

0.2
0 500 1000 1500 2000 2500

Rg(ohm)

Turn off drain source voltage slope

dv/dt(V/us)

350

300

250

200

150

100

50

0

0 500 1000 1500 2000 2500

Rg(ohm)

Vin=5V

Vdd=15V

Id=0.5A

9/14

1

11

VNS1NV04D

Turn Off Drain-Source Voltage Slope

dv/dt(V/us)

350

300

250

Vin=3.5V
Vdd=15V

Id=0.5A

200

150

100

50

0

0 500 1000 1500 2000 2500

Rg(ohm)

Switching Time Resistive Load

t(us)

2

1.75

1.5

1.25

0.75

0.5

0.25

Vdd=15V

Id=0.5A

Vin=5V

1

0

0 250 500 750 1000 1250 1500 1750 2000 2250 2500

td(off)

Rg(ohm)

Output Characteristics

tr

tf

td(on)

Capacitance Variations

C(pF)

225

200

175

150

125

100

75

50

0 5 10 15 20 25 30 35

f=1MHz
Vin=0V

Vds(V)

Switching Time Resistive Load

t(ns)

550
500
450
400
350
300
250
200
150
100

50

0

3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25

tr

td(on)

Vdd=15V

Id=0.5A

Rg=330ohm

td(off)

tf

Vin(V)

Normalized On Resistance Vs. Temperature

10/14

1111

ID(A)

2.4

2.2
2

1.8

1.6

1.4

1.2
1

0.8

0.6

0.4

0.2
0

0123456789101112

Vin=5.5V

Vin=4.5V

Vin=3.5V

Vin=3V

VDS(V)

Rds(on) (mOhm)

2.25

2

1.75

1.5

1.25

0.75

0.5

Vin=5V

Id=0.5A

1

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

VNS1NV04D

Normalized Input Threshold Voltage Vs.
Temperature

Vinth (V)

2

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2
0

Vds=Vin

Id=1mA

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

Step Response Current Limit

Tdlim(us)

2.4

2.3

Vin=5V

2.2

Rg=330ohm

Normalized Current Limit Vs. Junction
Temperature

Ilim (A)

5

4.5

4

3.5

3

2.5

2

1.5

1

0.5
0

Vin=5V

Vds=13V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

2.1

2

1.9
5 101520253035

Vdd(V)

11/14

VNS1NV04D

SO-8 MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019

c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M 0.6 0.023

F 8 (max.)

mm. inch

12/14

1

SO-8 TUBE SHIPMENT (no suffix)

VNS1NV04D

B

C

Base Q.ty 100
Bulk Q.ty 2000
Tube length (± 0.5) 532

A

A 3.2
B 6
C (± 0.1) 0.6

All dimensions are i n mm.

TAPE AND REEL SHIPMENT (suf fix “13TR”)

REEL DIMENSIONS

Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4

All dimensions are in mm.

TAPE DIMENSIONS

According to Electr onic Industries Association
(EIA) S tanda rd 481 rev. A, Feb 1986

Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2

All dimensions are i n mm.

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

13/14

1

VNS1NV04D

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are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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