Datasheet VNS1NV04, VNN1NV04, VND1NV04 Datasheet (SGS Thomson Microelectronics)

®

VND1NV04

/ VNN1 NV04 / VNS1NV04

“OMNIFET II”:

FULLY AUTOPROTECTED POW ER M OSF ET

TYPE R

VND1NV04
VNN1NV04
VNS1NV04

n

LINEAR CURRENT LIMITATION

n

THERMAL SHUT DOWN

n

SHORT CIRCUIT PROTECTION

n

INTEGRATED CLAMP

n

LOW CURRENT DRAWN FRO M INPUT PIN

n

DIAGNOSTIC FEEDBACK THROUGH INPUT

DS(on)

250 mΩ 1.7 A 40 V

I

lim

V

clamp

PIN

n

ESD PROTECTION

n

DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

n

COMPATIBLE WITH STANDARD POWER

MOSFET

DESCRIPTION

The VND1NV04, VNN1NV04, VNS1NV04 are
monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power

BLOCK DIAGRAM

2

3

2

1

SOT-223 SO-8

3

1

TO-252 (DPAK)

ORDER CODES:

TO-252 (D PAK)
SOT-223
SO-8

VND1NV04
VNN1NV04
VNS1NV04

MOSFETS from DC up to 50KHz applications.
Built in therm al s hutdown, li ne ar cur ren t limi tation
and overvol tage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.

DRAIN

2

Overvoltage

Clamp

INPUT

1

Februa ry 2003 1/18

Gate

Control

Over

Temperature

Linear

Current

Limiter

3

SOURCE

FC01000

VND1NV04 / VNN1NV04 / VNS1NV04

ABSOLUTE MAXIMUM RATI NG

Symbol Parameter

V

DS

V

I

IN

R

IN MIN

I

D

I

R

V

ESD1

V

ESD2

P

T

T

T

stg

CONNECTION DIAGRAM (TO P VI EW)

Drain-source Voltage (VIN=0V) Internally Clamped V
Input Voltage Internally Clamped V

IN

Input Current +/-20 mA
Minimum I nput Series Impedance 330 Ω
Drain Current Internally Limited A
Reverse DC Output Current -3 A
Electros tatic Discharge (R=1.5KΩ, C=100pF) 4000 V
Electros tatic Discharge on output pin only

(R=330Ω, C=150pF)
Total Dissipation at Tc=25°C 7 8.3 35 W

tot

Operating Junction Temperature Internal ly limite d °C

j

Case Operating Temperature Internally limite d °C

c

Storage Temperature -55 to 150 °C

SOT-223 SO-8 DPAK

SO-8 Pack ag e (*)

Value

Unit

16500 V

SOURCE

1
SOURCE
SOURCE

INPUT

(*) For the pins configuration related to SOT-223 and DPAK see outline at page 1.

4

CURRENT AND VOLTAGE CONVENTIONS

I

IN

R

IN

INPUT

V

IN

8

5

DRAIN

SOURCE

DRAIN

DRAIN
DRAIN
DRAIN

I

D

V

DS

2/18

VND1NV04 / VNN1NV04 / VNS1NV04

THERMAL DATA

Symbol Parameter

R

thj-case

R

thj-lead

R

thj-amb

(*) When mounte d on a s tandard single-sided FR4 board with 50mm

Thermal R esistance Junction-case}} } MAX 18 3.5 °C/W

Thermal R esistance Junction-lead MAX 15 °C/W
Thermal Resistance Junction-ambient MAX 70 (*) 65(*) 54 (*) °C/W

2

of Cu (at leas t 35 µm thick) connected to all DRAIN pins.

SOT-223 SO-8 DPAK

ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)

OFF

Symbol Parameter Test Conditions Min Typ Max Unit

V

CLAMP

V

V

I

V

I

CLTH

INTH

ISS

INCL

DSS

Drain-source Clamp
Voltage
Drain-source Clamp

Threshold Voltage
Input Thre shold Voltage VDS=VIN; ID=1mA 0. 5 2.5 V
Supply Current from Input

Pin
Input-Source Clamp
Voltage

Zero Input Voltage Drain
Current (VIN=0V)

V

=0V; ID=0.5A 40 45 55 V

IN

VIN=0V; ID=2mA 36 V

VDS=0V; VIN=5V 100 150 µA
IIN=1mA

I

=-1mA

IN

=13V; VIN=0V; Tj=25°C

V

DS

V

=25V; VIN=0V

DS

Value

6

-1.0

6.8 8

-0.3
30
75

Unit

V

µA

ON

Symbol Parameter Test Conditions Min Typ Max Unit

R

DS(on)

Static Drain-source On
Resistance

=5V; ID=0.5A; Tj=25°C

V

IN

V

=5V; ID=0.5A

IN

250
500

mΩ

3/18

1

VND1NV04 / VNN1NV04 / VNS1NV04

ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)

DYNAMIC

Symbol Parameter Tes t Conditions Min Typ Max Unit

gfs (**)

C

OSS

SWITCHING

Symbol P arameter Test Co nditions Min Typ M ax Unit

t

d(on)

t

t

d(off)

t

t

d(on)

t

t

d(off)

t

(dI/dt)

Q

Forward
Transconductance

VDD=13V; ID=0.5A 2 S

Output Capacitance VDS=13V; f=1MHz; VIN=0V 90 pF

Turn-on Delay Time
Rise Time 170 500 ns

r

Turn-off Delay Time 350 1000 ns
Fall Time 200 600 ns

f

Turn-on Delay Time
Rise Time 1.3 4.0 µs

r

Turn-off Delay Time 1.8 5.5 µs
Fall Time 1.2 4.0 µs

f

Turn-on Current Slope

on

Total Input Charge

i

=15V; ID=0.5A

V

DD

V

=5V; R

gen

gen=RIN MIN

(see figure 1)

=15V; ID=0.5A

V

DD

V

gen

=5V; R

gen

=2.2K Ω

(see figure 1)

=15V; ID=1.5A

V

DD

V

=5V; R
V
I

gen
DD

gen

gen=RIN MIN

=12V; ID=0.5A; VIN=5V

=2.13m A (see figure 5)

=330Ω

=330Ω

70 200 ns

0.25 1.0 µs

5.0 A/µs

5.0 nC

SOURCE DRAIN DIODE

Symbol Parameter Test Condit ions Min Typ Max Unit

(*) Forward On Vol tage ISD=0.5A; VIN=0V 0.8 V

V

SD

Q

I

RRM

t

Reverse Recovery Time ISD=0.5A; dI/dt=6A/µs

rr

Reverse Recovery Charge 100 µC

rr

Reverse Recovery Current 0.75 A

V

=30V; L= 20 0 µ H

DD

(see test circuit, figure 2)

205 ns

PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)

Symbol Parameter Test Condit ions Min Typ Max Unit

I

lim

t

dlim

T

T

I

E

(**) Pulsed: Pulse duration = 300µs, duty cycle 1.5%

Drain Current Limit VIN=5V; VDS=13V 1.7 3.5 A

=5V; VDS=13V

Step Response Current
Limit

Overtemperature

jsh

Shutdown

Overtemperature Reset 135 °C

jrs

Fault Sink Current VIN=5V; VDS=13V; Tj=T

gf

Sing l e Pu lse

as

Avala nche Ener gy

V

IN

Starting T
V

IN

=25°C; VDD=24V

j

=5V; R

gen=RIN MIN

(see figures 3 & 4)

jsh

=330Ω; L=50mH

2.0 µs

150 175 200 °C

10 15 20 mA

55 mJ

4/18

2

VND1NV04 / VNN1NV04 / VNS1NV04

PROTECTION FEATURES

During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.

The device then behaves like a standard power
MOSFET and can be used as a switch from DC up

to 50KHz. The only difference from the user’s
standpoint is that a small DC current I
100µA) flows into the INPUT pin in order to supply

ISS

(typ.

the internal circuitry.
The de vice i ntegrates:

- OVERVOLTAGE CLAMP PROTECTION:
internally set at 45V, along with the rugged

avalanche characteristics o f the Power MOSFET
stage giv e this device unrivall ed ruggedne ss and
energy handl ing capability. This feat ure is mainly
important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT:
limits the drain current ID to I

INPUT pin voltages. When the current limiter is

whatever the

lim

active, the device operates in the linear region, so
power dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
junction temperature may reach the
overtemperature threshold T

jsh

.

- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION:

these are based on sensing the chip t emperatur e
and are not dependen t on the input voltage. The
location o f t he s ensing el emen t on the c h ip i n t he
power stage area ensures fast, accurate detection
of the junction temperature. Overtemperature
cutout occurs in the range 150 to 190 °C, a typical
value being 170 °C. The device is auto matically
restarted when the chip temp eratu re fall s of about
15°C below shut-down temperature.

- STATUS FEEDBACK:
in the case of an overtem perature fault cond ition

(Tj > T
current Igf through the INPUT pin in order to

), the device tries to sink a diagnostic

jsh

indicate fault condition. If driven from a low
impedance source, this current may be used in
order to warn the control circuit of a device
shutdown. If the drive imped ance is high enough
so that the INPUT p in dri ver is no t abl e to su pply
the current Igf, the INPUT pin will fall to 0V. This

will not however affect the device operation:
no requirement is put on the current capability
of the INPUT pin driver except to be able to
supply the normal operation drive current I

ISS

Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.

.

5/18

VND1NV04 / VNN1NV04 / VNS1NV04

Figure 1: Switching Time Test Circuit for Resistive Load

I

D

90%

V

D

R

gen

V

gen

t

r

t

V

gen

d(on) t

10%

Figure 2: Test Circuit for Diode Recovery Times

A

D

I

OMNIFET

S

330Ω

B

R

gen

FAST
DIODE

d(off)

I

t

f

A

B

OMNIFET

L=100uH

D

t

t

V

DD

6/18

V

gen

S

8.5 Ω

VND1NV04 / VNN1NV04 / VNS1NV04

Figure 3: Unclamped Inductive Load Test Circuits

R

V

IN

P

GEN

W

Figure 5: Input Charge Test Circuit

IN

V

GEN

Figure 4: Unclamped Inductive Waveforms

Figure 6: Thermal Impedance for SOT-223

ND8003

Figure 7: Thermal Impedance for DPAK/IPAK

7/18

VND1NV04 / VNN1NV04 / VNS1NV04

Source-Drain Diode Forward Characteristics

Vsd (mV)

1000

950

Vin=0V

900

850

800

750

700

0 2 4 6 8 101214

Id (A)

Derating Curve

Voltage

Static Drain Source On Resistance

Rds(on) (ohms)

4.5

4

3.5

3

2.5

2

1.5

1

0.5

0

Vin=2.5V

0 0.05 0.1 0.15 0.2 0.25 0.3

Tj=-40ºC

Tj=25ºC

Tj=150ºC

Id(A)

Static Drain-Source On resistance Vs. Input
Voltage

Rds(on) (mohms)

500

450

400

350

300

250

200

150

100

50

0

33.544.555.566.57

Id=0.5A

Tj=150ºC

Tj=25ºC

Tj=-40ºC

Vin(V)

TransconductanceStatic Drain-Source On resistance Vs. Input

Rds(on) (mohms)

500

Tj=150ºC

450

400

350

300

Tj=25ºC

250

200

Tj=-40ºC

150

100

50

0

3 3.5 4 4.5 5 5.5 6 6.5

Vin(V)

8/18

11

Id=1.5A
Id=1A

Id=1.5A
Id=1A

Id=1.5A
Id=1A

Gfs (S)

6

5.5
5

4.5
4

3.5
3

2.5
2

1.5

1

0.5
0

Vds=13V

0 0.25 0.5 0.75 1 1.25 1.5 1.75 2

Tj=-40ºC

Tj=25º C

Tj=150ºC

Id(A)

VND1NV04 / VNN1NV04 / VNS1NV04

Static Drain-Source On Resistance Vs. Id

Rds(on) (mohms)

500

450

400

350

300

250

200

150

100

50

0

0 0.25 0.5 0.75 1 1.25 1.5 1.75 2

Tj=150ºC

Tj=25ºC

Tj=-40ºC

Vin=3.5V

Vin=5V

Vin=3.5V

Vin=5V

Vin=3.5V

Vin=5V

Id(A)

Turn On Current Slope

di/dt(A/us)

6

5

4

Vin=5V

Vdd=15V

Id=1.5A

Transfer Characteristics

Idon(A)

2.25

2

Vds=13.5V

1.75

1.5

1.25

1

Tj=150ºC

0.75

0.5

0.25

0

1.5

1.7522.25

2.5

2.7533.25

Turn On Current Slope

di/dt(A/us)

1.4

1.2

1

Tj=-40ºC

Vin(V)

3.5

3.7544.25

Vin=3.5V
Vdd=15V

Id=1.5A

Tj=25ºC

4.5

4.75

5

3

2

1

0

0 500 1000 1500 2000 2500

Rg(ohm)

Input Voltage Vs. Input Charge

Vin (V)

6

5

4

3

2

1

0

Vds=12V

Id=0.5A

0123456

Qg (nC)

0.8

0.6

0.4

0.2
0 500 1000 1500 2000 2500

Rg(ohm)

Turn off drain source voltage slope

dv/dt(V/us)

350

300

250

200

150

100

50

0

0 500 1000 1500 2000 2500

Rg(ohm)

Vin=5V

Vdd=15V

Id=0.5A

9/18

VND1NV04 / VNN1NV04 / VNS1NV04

Turn Off Drain-Source Voltage Slope

dv/dt(V/us)

350

300

250

Vin=3.5V
Vdd=15V

Id=0.5A

200

150

100

50

0

0 500 1000 1500 2000 2500

Rg(ohm)

Switching Time Resistive Load

t(us)

2

1.75

1.5

1.25

0.75

0.5

0.25

Vdd=15V

Id=0.5A

Vin=5V

1

0

0 250 500 750 1000 1250 1500 1750 2000 2250 2500

td(off)

Rg(ohm)

Output Characteristics

tr

tf

td(on)

Capacitance Variations

C(pF)

225

200

175

150

125

100

75

50

0 5 10 15 20 25 30 35

f=1MHz
Vin=0V

Vds(V)

Switching Time Resistive Load

t(ns)

550
500
450
400
350
300
250
200
150
100

50

0

3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25

tr

td(on)

Vdd=15V

Id=0.5A

Rg=330ohm

td(off)

tf

Vin(V)

Normalized On Resistance Vs. Temperature

10/18

11

ID(A)

2.4

2.2
2

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2
0

0123456789101112

Vin=5.5V

Vin=4.5V

Vin=3.5V

Vin=3V

VDS(V)

Rds(on) (mOhm)

2.25

2

Vin=5V

1.75

1.5

1.25

0.75

0.5

Id=0.5A

1

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

VND1NV04 / VNN1NV04 / VNS1NV04

Normalized Input Threshold Voltage Vs.
Temperature

Vinth (V)

2

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2
0

Vds=Vin

Id=1mA

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

Step Response Current Limit

Tdlim(us)

2.4

2.3

Vin=5V

2.2

Rg=330ohm

Normalized Current Limit Vs. Junction
Temperature

Ilim (A)

5

4.5

4

3.5

3

2.5

2

1.5

1

0.5
0

Vin=5V

Vds=13V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

2.1

2

1.9
5 101520253035

Vdd(V)

11/18

VND1NV04 / VNN1NV04 / VNS1NV04

SOT-223 MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 1.8 0.071
B 0.6 0.7 0.85 0.024 0.027 0.033

B1 2.9 3 3.15 0.114 0.118 0.124

c 0.24 0.26 0.35 0.009 0.01 0.014

D 6.3 6.5 6.7 0.248 0.256 0.264

e2.3 0.09

e1 4.6 0.181

E 3.3 3.5 3.7 0.13 0.138 0.146

H 6.7 7 7.3 0.264 0.276 0.287

V10 (max)

A1 0.02 0.1 0.0008 0.004

mm. inch

12/18

0046067

VND1NV04 / VNN1NV04 / VNS1NV04

SO-8 MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019

c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M 0.6 0.023

F 8 (max.)

mm. inch

13/18

VND1NV04 / VNN1NV04 / VNS1NV04

TO-252 (DPAK) MECHANICAL DATA

DIM.

A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23

B 0.64 0.90
B2 5.20 5.40

C 0.45 0.60
C2 0.48 0.60

D 6.00 6.20
D1 5.1

E 6.40 6.60
E1 4.7

e2.28
G 4.40 4.60
H 9.35 10.10

L2 0.8
L4 0.60 1.00

R0.2

V2 0° 8°

Package W eight Gr. 0.29

MIN. TYP MAX.

mm.

14/18

P032P

VND1NV04 / VNN1NV04 / VNS1NV04

DPAK FOOTPRINT TUBE SHIPMENT (no suffix)

6.7

6.7 3.01.8 1.6

2.3

2.3

TAPE AND REEL SHIPMENT (suffix “13TR”)

A

Base Q.ty 75

C

Bulk Q.ty 3000
Tube length (± 0. 5) 532

A 6

B

B 21.3
C (± 0.1) 0.6

All dimensions are in mm.

REEL DIMENSIONS

Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 16.4
N (min) 60
T (max) 22.4

TAPE DIMENSIONS

According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986

Tape width W 16
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 7.5
Compartm ent Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2

All dimensions are in mm.

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

15/18

VND1NV04 / VNN1NV04 / VNS1NV04

SOT-223 TAPE AND REEL SHIPMENT (suffix “13TR”)

TAPE DIMENSIONS

According to Electr onic Industries Association
(EIA) Sta ndard 481 rev. A, Feb. 1986

Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2

REEL DIMENS I O N S

Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4

All dimensions are i n mm.

16/18

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

1

VND1NV04 / VNN1NV04 / VNS1NV04

SO-8 TUBE SHIPMENT (no suffix)

B

C

Base Q.ty 100
Bulk Q.ty 2000
Tube length (± 0.5) 532

A

A 3.2
B 6
C (± 0.1) 0.6

All dimensions are i n mm.

TAPE AND REEL SHIPMENT (suffix “13TR”)

REEL DIMENSIONS

Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4

All dimensions are in mm.

TAPE DIMENSIONS

According to Electr onic Industries Association
(EIA) S tanda rd 481 rev. A, Feb 1986

Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2

All dimensions are i n mm.

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

17/18

VND1NV04 / VNN1NV04 / VNS1NV04

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are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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18/18