Datasheet VND830P-E Datasheet (ST)

Page 1
Features
Type R
VND830P-E 60 mΩ
1. Per each channel.
DS(on)
(1)
I
OUT
6A
(1)
V
CC
36 V
VND830P-E
Double channel high-side driver
ECOPACK
Automotive Grade: compliance with AEC
®
guidelines
Very low standby current
CMOS compatible input
On-state open-load detection
Off-state open-load detection
Thermal shutdown protection and diagnosis
Undervoltage shutdown
Overvoltage clamp
Output stuck to V
Load current limitation
Reverse battery protection
Electrostatic discharge protection
detection
CC

Table 1. Device summary

Description
The VND830P-E is a monolithic device made by using STMicroelectronics™ VIPower™ M0-3 technology, intended for driving any kind of load with one side connected to ground.
Active V against low energy spikes (see ISO7637 transient compatibility table).
Active current limitation combined with thermal shutdown and automatic restart protects the device against overload. The device detects open-load condition both is on-state and off-state. Output shorted to V Device automatically turns-off in case of ground pin disconnection.
pin voltage clamp protects the devices
CC
is detected in the off-state.
CC
Order codes
Package
Tube Tape and reel
SO-16L VND830P-E VND830PTR-E
September 2010 Doc ID 17546 Rev 2 1/27
www.st.com
1
Page 2
VND830P-E Contents
Contents
1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 16
3.1.1 Solution 1: a resistor in the ground line (RGND only) . . . . . . . . . . . . . . 16
3.1.2 Solution 2: a diode (D
3.2 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
) in the ground line . . . . . . . . . . . . . . . . . . . . 17
GND
3.3 MCU I/O protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.4 Open-load detection in off-state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.5 Maximum demagnetization energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4 Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.1 SO-16L thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.1 ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.2 SO-16L package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.3 SO-16L packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Doc ID 17546 Rev 2 2/27
Page 3
VND830P-E List of tables
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table 2. Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 3. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 4. Thermal data (per island) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 5. Power output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Table 6. Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 7. V
Table 8. Status pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 9. Switching (V
Table 10. Open-load detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 11. Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 12. Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 13. Electrical transient requirements on V Table 14. Electrical transient requirements on V Table 15. Electrical transient requirements on V
Table 16. Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 17. SO-16L mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 18. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
- output diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
CC
= 13 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
CC
pin (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
CC
pin (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
CC
pin (part 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
CC
Doc ID 17546 Rev 2 3/27
Page 4
VND830P-E List of figures
List of figures
Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 4. Switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5. Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 6. Off-state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 7. High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 8. Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 9. Status leakage current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 10. Status low output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 11. Status clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 12. Overvoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 13. I
Figure 14. Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 15. Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 16. On-state resistance vs Figure 17. On-state resistance vs V
Figure 18. Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 19. Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 20. Open-load on-state detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 21. Open-load off-state detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 22. Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 23. Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 24. Open-load detection in off-state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 25. SO-16L maximum turn-off current versus load inductance. . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 26. SO-16L PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 27. Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . 20
Figure 28. SO-16 L thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 29. Thermal fitting model of a quad channel HSD in SO-16L . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 30. SO-16L package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 31. SO-16L tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 32. Tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
LIM
vs T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
case
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Tcase
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
CC
Doc ID 17546 Rev 2 4/27
Page 5
VND830P-E Block diagram and pin description

1 Block diagram and pin description

Figure 1. Block diagram

V
cc
V
GND
INPUT1
STATUS1
INPUT2
STATUS2
cc
CLAMP
OVERT EMP. 1
OVERT EMP. 2
LOGIC
OVERVOLTAGE
UNDERVOLTAGE
CLAMP 1
DRIVER 1
CURRENT LIMITER 1
OPEN-LOAD ON 1
OPEN-LOAD OFF 1
CLAMP 2
DRIVER 2
CURRENT LIMITER 2
OPEN-LOAD ON 2
OPEN-LOAD OFF 2
OUTPUT1
OUTPUT2

Figure 2. Configuration diagram (top view)

V
CC
1
16
N.C.
GND
INPUT 1
STATUS 1
STATUS 2
INPUT 2
V
CC

Table 2. Suggested connections for unused and not connected pins

Connection / pin Status N.C. Output Input
Floating X X X X
To ground - X -
8
9
V
CC
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 2
OUTPUT 2
OUTPUT 2
V
CC
Through 10 KΩ
resistor
Doc ID 17546 Rev 2 5/27
Page 6
VND830P-E Electrical specifications

2 Electrical specifications

2.1 Absolute maximum ratings

Stressing the device above the rating listed in Tabl e 3 may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality document.

Table 3. Absolute maximum ratings

Symbol Parameter Value Unit
V
- V
- I
I
- I
I
STAT
V
E
P
T
CC
CC
GND
OUT
OUT
I
IN
ESD
MAX
tot
T
j
T
c
stg
DC supply voltage 41 V
Reverse DC supply voltage - 0.3 V
DC reverse ground pin current - 200 mA
DC output current Internally limited A
Reverse DC output current - 6 A
DC input current +/- 10 mA
DC status current +/- 10 mA
Electrostatic discharge (Human Body Model: R=1.5 KΩ; C = 100 pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
4000 4000 5000 5000
V V V V
Maximum switching energy (L = 1.8 mH; R
= 9 A)
I
L
= 0 Ω; V
L
Power dissipation T
= 13.5 V; T
bat
=25°C 8.3 W
lead
= 150 °C;
jstart
102 mJ
Junction operating temperature Internally limited °C
Case operating temperature - 40 to 150 °C
Storage temperature - 55 to 150 °C
Doc ID 17546 Rev 2 6/27
Page 7
VND830P-E Electrical specifications

2.2 Thermal data

Table 4. Thermal data (per island)

Symbol Parameter Value Unit
R
thj-lead
R
thj-amb
1. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick) connected to all VCC pins. Horizontal mounting and no artificial air flow.
2. When mounted on a standard single-sided FR-4 board with 6 cm Horizontal mounting and no artificial air flow.
Thermal resistance junction-lead (max) 15 °C/W
Thermal resistance junction-ambient (max) 65
2
of Cu (at least 35 µm thick) connected to all VCC pins.
(1)
48
(2)
°C/W

2.3 Electrical characteristics

Values specified in this section are for 8 V < V otherwise stated.
(Per each channel)

Figure 3. Current and voltage conventions

I
IN1
INPUT 1
I
V
IN1
STAT1
STATUS 1
V
STAT1
I
IN2
INPUT 2
I
V
STAT2
IN2
STATUS 2
V
STAT2
< 36 V; -40 °C < Tj < 150 °C, unless
CC
(1)
V
F1
V
CC
I
OUT1
OUTPUT 1
V
OUT1
I
OUT2
OUTPUT 2
V
OUT2
GND
I
GND
I
S
V
CC
1. VFn = V

Table 5. Power output

CCn
- V
during reverse battery condition.
OUTn
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
Operating supply voltage 5.5 13 36 V
(1)
Undervoltage shutdown 3 4 5.5 V
(1)
Overvoltage shutdown 36 V
I
= 2 A; Tj = 25 °C
On-state resistance
ON
OUT
I
OUT
= 2 A; V
CC
> 8 V
60
120mΩmΩ
V
V
USD
V
R
CC
OV
Doc ID 17546 Rev 2 7/27
Page 8
VND830P-E Electrical specifications
Table 5. Power output (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
I
S
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
1. Per device.

Table 6. Protections

Supply current
Off-state output current V
Off-state output current V
Off-state output current
Off-state output current
(1)
Off-state; V
= V
V
IN
Off-state; V
= V
V
IN
On-state; V
= 5 V; I
V
IN
= V
IN
= 0 V; V
IN
V
= V
IN
= 125 °C
T
j
V
= V
IN
=25 °C
T
j
= 13 V;
CC
= 0 V
OUT
= 13 V;
CC
= 0 V; Tj = 25°C
OUT
= 13 V;
CC
= 0 A
OUT
= 0 V 0 50 µA
OUT
= 3.5 V -75 0 µA
OUT
OUT
OUT
= 0 V; V
= 0 V; V
CC
CC
= 13 V;
= 13 V;
12 40 µA
12 25 µA
57mA
A
A
Symbol Parameter Test conditions Min. Typ. Max. Unit
T
T
T
Shutdown temperature 150 175 200 °C
TSD
Reset temperature 135 °C
T
R
Thermal hysteresis 7 15 °C
hyst
Status delay in overload
SDL
conditions
T
> T
j
TSD
20 µs
V
= 13 V 6 9 15 A
I
V
demag
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles.

Tabl e 7. VCC - output diode

Current limitation
lim
Turn-off output clamp voltage
CC
5.5 V < V
I
OUT
< 36 V 15 A
CC
= 2 A; L = 6 mH V
-41 V
CC
CC
-48 V
-55 V
CC
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
Forward on voltage -I
F

Table 8. Status pin

=1.3 A; Tj=150°C - - 0.6 V
OUT
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
STAT
I
LSTAT
C
STAT
Status low output voltage I
= 1.6 mA 0.5 V
STAT
Status leakage current Normal operation; V
Status pin input capacitance Normal operation; V
= 5 V 10 µA
STAT
= 5 V 100 pF
STAT
Doc ID 17546 Rev 2 8/27
Page 9
VND830P-E Electrical specifications
Table 8. Status pin (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
= 1 mA 6 6.8 8 V
V
Table 9. Switching (V
Status clamp voltage
SCL
CC
= 13 V)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
dV/dt
dV/dt

Table 10. Open-load detection

Turn-on delay time
Turn-off delay time
Turn-on voltage slope
(on)
Turn-off voltage slope
(off)
STAT
I
= - 1 mA -0.7 V
STAT
= 6.5 Ω from VIN rising
R
L
edge to V
R
= 6.5 Ω from VIN falling
L
edge to V
= 6.5 Ω from V
R
L
to V
OUT
= 6.5 Ω from V
R
L
to V
OUT
= 1.3 V
OUT
= 11.7 V
OUT
= 10.4 V
= 1.3 V
OUT
OUT
= 1.3 V
= 11.7 V
-30-µs
-30-µs
See
-
-
Figure 14
See
Figure 15
-V/µs
-V/µs
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
t
DOL(on)
V
t
DOL(off)

Table 11. Logic input

Open-load on-state detection
OL
threshold
Open-load on-state detection delay
Open-load off-state voltage
OL
detection threshold
Open-load detection delay at turn-off
= 5 V 50 100 200 mA
V
IN
= 0 A 200 µs
I
OUT
V
= 0 V 1.5 2.5 3.5 V
IN
1000 µs
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
V
I
V
V
Input low level 1.25 V
IL
I
Low level input current V
IL
Input high level 3.25 V
IH
High level input current V
IH
Input hysteresis voltage 0.5 V
hyst
Input clamp voltage
ICL
= 1.25 V 1 µA
IN
= 3.25 V 10 µA
IN
I
= 1 mA 6 6.8 8 V
IN
= -1 mA -0.7 V
I
IN
Doc ID 17546 Rev 2 9/27
Page 10
VND830P-E Electrical specifications

Figure 4. Switching time waveforms

Table 12. Truth table

Conditions Input Output Sense
Normal operation
Current limitation
Overtemperature
Undervoltage
Overvoltage
Output voltage > V
Output current < I
OL
OL
L
H
L H H
L H
L H
L H
L H
L H
L
H
L X X
L
L
L
L
L
L
H H
L H
(T (T
< T
j
> T
j
TSD
TSD
H H
H ) H ) L
H
L
X
X
H
H
L
H
H
L
Doc ID 17546 Rev 2 10/27
Page 11
VND830P-E Electrical specifications
Table 13. Electrical transient requirements on V
ISO T/R
7637/1
test pulse
I II III IV Delays and impedance
1 -25 V -50 V -75 V -100 V
2 +25 V +50 V +75 V +100 V
3a -25 V -50 V -100 V -150 V
3b +25 V +50 V +75 V +100 V 0.1 µs, 50 Ω
4 -4 V -5 V -6 V -7 V 100 ms, 0.01 Ω
5 +26.5V +46.5V +66.5V +86.5V 400ms, 2Ω

Table 14. Electrical transient requirements on VCC pin (part 2)

Test levels
pin (part 1)
CC
2ms, 10Ω
0.2 ms, 10 Ω
0.1 µs, 50 Ω
ISO T/R
Test levels results
7637/1
test pulse
I II III IV
1 CCCC
2 CCCC
3a CCCC
3b CCCC
4 CCCC
5CEEE

Table 15. Electrical transient requirements on VCC pin (part 3)

Class Contents
C
E
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.
Doc ID 17546 Rev 2 11/27
Page 12
VND830P-E Electrical specifications

Figure 5. Waveforms

NORMAL OPERATION
INPUT
n
OUTPUT VOLTAGE
STATUS
n
V
CC
INPUT
n
OUTPUT VOLTAGE
STATUS
V
CC
INPUT
n
OUTPUT VOLTAGE
STATUS
n
n
n
n
V
USD
VCC<V
UNDERVOLTAGE
OVERVOLTAGE
OV
V
USDhyst
undefined
V
> V
CC
OV
INPUT
n
OUTPUT VOLTAGE
STATUS
n
INPUT
n
OUTPUT VOLTAGE
STATUS
n
T
j
INPUT
n
OUTPUT CURRENT
STATUS
n
OPEN-LOAD with external pull-up
V
> V
n
V
OL
OUT
OL
OPEN-LOAD without external pull-up
n
T
TSD
T
R
n
OVERTEMPERATURE
Doc ID 17546 Rev 2 12/27
Page 13
VND830P-E Electrical specifications

2.4 Electrical characteristics curves

Figure 6. Off-state output current Figure 7. High level input current
IL(off1) (uA)
2.5
2.25
2
1.75
1.5
1.25
0.75
0.5
0.25
0
Figure 8. Input clamp voltage Figure 9. Status leakage current
Off state Vcc=36V
Vin=Vout=0V
1
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Vicl (V)
8
7.8
7.6
7.4
7.2
7
6.8
6.6
6.4
6.2
6
Iin=1mA
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Iih (uA)
5
4.5
3.5
2.5
1.5
0.5
Vin=3.25V
4
3
2
1
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Ilstat (uA)
0.05
0.04
Vstat=5V
0.03
0.02
0.01
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)

Figure 10. Status low output voltage Figure 11. Status clamp voltage

Vstat (V)
0.8
0.7
Istat=1.6mA
0.6
0.5
0.4
0.3
0.2
0.1
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Vscl (V)
8
7.8
7.6
7.4
7.2
6.8
6.6
6.4
6.2
Istat=1mA
7
6
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Doc ID 17546 Rev 2 13/27
Page 14
VND830P-E Electrical specifications

Figure 12. Overvoltage shutdown Figure 13. I

Vov (V)
50
48
46
44
42
40
38
36
34
32
30
-50 -25 0 25 50 75 100 125 150 175
Ilim (A)
20
18
16
14
12
10
8
6
4
2
0
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)

Figure 14. Turn-on voltage slope Figure 15. Turn-off voltage slope

dVout/dt(on) (V/ms)
800
700
600
500
400
300
200
100
Vcc=13V
Rl=6.5Ohm
0
-50 -25 0 25 50 75 100 125 150 175
dVout/dt(off) (V/ms)
600
550
500
450
400
350
300
250
200
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
vs T
LIM
Vcc=13V
Vcc=13V
Rl=6.5Ohm
case
Tc (°C)
Tc (ºC)
Figure 16. On-state resistance vs T
Ron (mOhm)
160
140
120
100
80
60
40
20
0
-50 -25 0 25 50 75 100 125 150 175
Iout=2A
Vcc=8V; 13V & 36V
Tc (°C)
case
Figure 17. On-state resistance vs V
CC
Ron (mOhm)
120
110
100
90
80
70
60
50
40
30
20
10
0
5 10152025303540
Tc=150°C
Tc=25°C
Tc= - 40°C
Iout=5A
Vcc (V)
Doc ID 17546 Rev 2 14/27
Page 15
VND830P-E Electrical specifications

Figure 18. Input high level Figure 19. Input low level

Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
-50 -25 0 25 50 75 100 125 150 175
Tc ( ° C)
Figure 20. Open-load on-state detection
threshold
Iol (mA)
150
140
130
120
110
100
90
80
70
Vcc=13V
Vin=5V
-50 -25 0 25 50 75 100 125 150 175
Tc ( ° C)
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -25 0 25 50 75 100 125 150 175
Tc (° C)
Figure 21. Open-load off-state detection
threshold
Vol (V)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
Vin=0V
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)

Figure 22. Input hysteresis voltage

Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Doc ID 17546 Rev 2 15/27
Page 16
VND830P-E Application information

3 Application information

Figure 23. Application schematic

+5V
+5V
+5V
μ
R
prot
C
R
prot
R
prot
R
prot
STATUS1
INPUT1
STATUS2
INPUT2
V
CC
D
ld
OUTPUT1
D
OUTPUT2
GND
GND
R
V
GND
GND

3.1 GND protection network against reverse battery

This section provides two solutions for implementing a ground protection network against reverse battery.
3.1.1 Solution 1: a resistor in the ground line (R
This can be used with any type of load.
The following shows how to dimension the R
1. R
2. R
where - I
600 mV / (I
GND
(-VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
)
)
maximum rating section of the device’s datasheet.
GND
resistor:
GND
only)
Power dissipation in R
P
=(-VCC)2/R
D
(when VCC< 0 during reverse battery situations) is:
GND
GND
This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Doc ID 17546 Rev 2 16/27
Page 17
VND830P-E Application information
Please note that, if the microprocessor ground is not common with the device ground, then the R
produces a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift varies depending on how many devices are ON in the case of several high­side drivers sharing the same R
GND
.
If the calculated power dissipation requires the use of a large resistor, or several devices have to share the same resistor, then ST suggests using Section 3.1.2 described below.
3.1.2 Solution 2: a diode (D
A resistor (R
=1kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load. This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network produce a shift (~600 mV) in the input threshold and the status output values if the microprocessor ground is not common with the device ground. This shift does not vary if more than one HSD shares the same diode/resistor network. Series resistor in INPUT and STATUS lines are also required to prevent that, during battery voltage transient, the current exceeds the absolute maximum rating. Safest configuration for unused INPUT and STATUS pin is to leave them unconnected.

3.2 Load dump protection

Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the V
maximum DC rating. The same applies if the device is subjected to transients on the
CC
V
line that are greater than those shown in Tab l e 1 3 .
CC

3.3 MCU I/O protection

If a ground protection network is used and negative transients are present on the VCC line, the control pins are pulled negative. ST suggests to insert a resistor (R the microcontroller I/O pins from latching up.
if the device is driving an
GND
) in line to prevent
prot
The value of these resistors is a compromise between the leakage current of microcontroller and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of microcontroller I/Os:
-V
CCpeak
/ I
latchup
R
prot
(V
OHμC
- V
IH
- V
GND
) / I
IHmax
Example
For the following conditions:
V
CCpeak
I
latchup
V
OHμC
5kΩ ≤ R
The recommended values are:
R
prot
= -100 V
20 mA
4.5 V
prot
= 10 kΩ
65 kΩ.
Doc ID 17546 Rev 2 17/27
Page 18
VND830P-E Application information

3.4 Open-load detection in off-state

Off-state open-load detection requires an external pull-up resistor (RPU) connected between OUTPUT pin and a positive supply voltage (V microprocessor.
The external resistor has to be selected according to the following requirements:
1. No false open-load indication when load is connected: in this case it needs to avoid V V
OUT
= (V
/ (RL + RPU))RL < V
PU
to be higher than V
OUT
Olmin.
2. No misdetection when load is disconnected: in this case the V V
Because I up resistor R
; this results in the following condition R
OLmax
may significantly increase if V
s(OFF)
should be connected to a supply that is switched OFF when the module is in
PU
standby.
) like the +5 V line used to supply the
PU
; this results in the following condition
Olmin
has to be higher than
< (V
PU
is pulled high (up to several mA), the pull-
out
PU
- V
OUT
OLmax
) / I
L(off2)
.
The values of V
OLmin
, V
OLmax
and I
are available in Chapter 2: Electrical specifications.
L(off2)

Figure 24. Open-load detection in off-state

IN PUT
STATUS
DRIVER
+
LOGIC
+
-
GROUND
V batt. VPU
V
CC
I
L(o ff2)
OUT
R
V
OL
R
PU
R
L
Doc ID 17546 Rev 2 18/27
Page 19
VND830P-E Application information

3.5 Maximum demagnetization energy

Figure 25. SO-16L maximum turn-off current versus load inductance

I
LM A X ( A)
100
10
A
B
C
1
0,1 1 10 100
A = single pulse at T
Jstart
B= repetitive pulse at T
C= repetitive pulse at T
Conditions:
= 13.5 V
V
CC
VIN, I
L
Note: Values are generated with RL = 0 Ω. In case of repetitive pulses, T specified above for curves B and C.
Demagnetization
(at beginning of each demagnetization) of every pulse must not exceed the temperature
jstart
= 150 °C
Jstart
Jstart
= 100 °C
= 125 °C
L( m H )
Demagnetization
Demagnetization
t
Doc ID 17546 Rev 2 19/27
Page 20
VND830P-E Package and PCB thermal data

4 Package and PCB thermal data

4.1 SO-16L thermal data

Figure 26. SO-16L PC board
Note: Layout condition of R 35 µm, Copper areas: 0.5 cm
Figure 27. R
RTH j-amb (°C/W)
70
and Zth measurements (PCB FR4 area = 41 mm x 48 mm, PCB thickness = 2 mm, Cu thickness =
th
2
, 6 cm2).
vs PCB copper area in open box free air condition
thj-amb
65
(1)
60
55
50
45
40
01234567
PCB Cu heatsink area (cm^2)
Doc ID 17546 Rev 2 20/27
Page 21
VND830P-E Package and PCB thermal data

Figure 28. SO-16 L thermal impedance junction ambient single pulse

Equation 1
Z
THδ
where
: pulse calculation formula
RTHδ Z
THtp
1 δ()+=
δ tpT=

Figure 29. Thermal fitting model of a quad channel HSD in SO-16L

Tj_1
Pd1
Tj_2
C1
C1 C2
R1
Pd2
C3 C4
R3R1 R6R5R2
R2
R4
T_amb
C5 C6C2
Doc ID 17546 Rev 2 21/27
Page 22
VND830P-E Package and PCB thermal data

Table 16. Thermal parameters

Area/ island (cm2) Footprint 6
R1 (°C/W) 0.05
R2 (°C/W) 0.3
R3 (°C/W) 2.2
R4 (°C/W) 12
R5 (°C/W) 15
R6 (°C/W) 37 22
C1 (W.s/°C) 0.001
C2 (W.s/°C) 5.00E-03
C3 (W.s/°C) 0.02
C4 (W.s/°C) 0.3
C5 (W.s/°C) 1
C6 (W.s/°C) 3 5
Doc ID 17546 Rev 2 22/27
Page 23
VND830P-E Package and packing information

5 Package and packing information

5.1 ECOPACK® packages

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.

5.2 SO-16L package information

Figure 30. SO-16L package dimensions

Doc ID 17546 Rev 2 23/27
Page 24
VND830P-E Package and packing information

Table 17. SO-16L mechanical data

mm.
DIM.
Min. Typ. Max.
A 2.65
a1 0.1 0.2
a2 2.45
b 0.35 0.49
b1 0.23 0.32
C0.5
c1 45° (typ.)
D 10.1 10.5
E 10.0 10.65
e1.27
e3 8.89
F7.4 7.6
L 0.5 1.27
M 0.75
S 8° (max.)
Doc ID 17546 Rev 2 24/27
Page 25
VND830P-E Package and packing information

5.3 SO-16L packing information

Figure 31. SO-16L tube shipment (no suffix)

Base Q.ty 50 Bulk Q.ty 1000
C
B
A

Figure 32. Tape and reel shipment (suffix “TR”)

Tube length (± 0.5) 532 A 3.5 B 13.8 C (± 0.1) 0.6
Reel dimensions
Base Q.ty 1000 Bulk Q.ty 1000 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 16.4 N (min) 60 T (max) 22.4
Tape dimensions
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986
Tape width W 16 Tape Hole Spacing P0 (± 0.1) 4 Component Spacing P 12 Hole Diameter D (± 0.1/-0) 1.5 Hole Diameter D1 (min) 1.5 Hole Position F (± 0.05) 7.5 Compartment Depth K (max) 6.5 Hole Spacing P1 (± 0.1) 2
All dimensions are in mm.
Top
cover
tape
End
500mm min
Empty components pockets saled with cover tape.
User direction of feed
Start
No componentsNo components Components
500mm min
Doc ID 17546 Rev 2 25/27
Page 26
VND830P-E Revision history

6 Revision history

Table 18. Document revision history

Date Revision Changes
25-May-2010 1 Initial release.
22-Sep-2010 2 Changed document status from preliminary data to datasheet.
Doc ID 17546 Rev 2 26/27
Page 27
VND830P-E
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Doc ID 17546 Rev 2 27/27
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