The VND830P-E is a monolithic device made by
using STMicroelectronics™ VIPower™ M0-3
technology, intended for driving any kind of load
with one side connected to ground.
Active V
against low energy spikes (see ISO7637 transient
compatibility table).
Active current limitation combined with thermal
shutdown and automatic restart protects the
device against overload. The device detects
open-load condition both is on-state and off-state.
Output shorted to V
Device automatically turns-off in case of ground
pin disconnection.
Table 2.Suggested connections for unused and not connected pins
Connection / pinStatusN.C.OutputInput
FloatingXXXX
To ground-X-
8
9
V
CC
OUTPUT 1
OUTPUT 1
OUTPUT 1
OUTPUT 2
OUTPUT 2
OUTPUT 2
V
CC
Through 10 KΩ
resistor
Doc ID 17546 Rev 25/27
Page 6
VND830P-EElectrical specifications
2 Electrical specifications
2.1 Absolute maximum ratings
Stressing the device above the rating listed in Tabl e 3 may cause permanent damage to the
device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sectionsof this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality
document.
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
- V
- I
I
- I
I
STAT
V
E
P
T
CC
CC
GND
OUT
OUT
I
IN
ESD
MAX
tot
T
j
T
c
stg
DC supply voltage41V
Reverse DC supply voltage- 0.3V
DC reverse ground pin current- 200mA
DC output currentInternally limitedA
Reverse DC output current - 6A
DC input current+/- 10mA
DC status current+/- 10mA
Electrostatic discharge (Human Body Model: R=1.5 KΩ;
C = 100 pF)
1. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick) connected to all VCC pins.
Horizontal mounting and no artificial air flow.
2. When mounted on a standard single-sided FR-4 board with 6 cm
Horizontal mounting and no artificial air flow.
Thermal resistance junction-lead (max)15°C/W
Thermal resistance junction-ambient (max)65
2
of Cu (at least 35 µm thick) connected to all VCC pins.
(1)
48
(2)
°C/W
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
otherwise stated.
(Per each channel)
Figure 3.Current and voltage conventions
I
IN1
INPUT 1
I
V
IN1
STAT1
STATUS 1
V
STAT1
I
IN2
INPUT 2
I
V
STAT2
IN2
STATUS 2
V
STAT2
< 36 V; -40 °C < Tj < 150 °C, unless
CC
(1)
V
F1
V
CC
I
OUT1
OUTPUT 1
V
OUT1
I
OUT2
OUTPUT 2
V
OUT2
GND
I
GND
I
S
V
CC
1. VFn = V
Table 5.Power output
CCn
- V
during reverse battery condition.
OUTn
SymbolParameterTest conditionsMin.Typ.Max. Unit
(1)
Operating supply voltage5.51336V
(1)
Undervoltage shutdown345.5V
(1)
Overvoltage shutdown36V
I
= 2 A; Tj = 25 °C
On-state resistance
ON
OUT
I
OUT
= 2 A; V
CC
> 8 V
60
120mΩmΩ
V
V
USD
V
R
CC
OV
Doc ID 17546 Rev 27/27
Page 8
VND830P-EElectrical specifications
Table 5.Power output (continued)
SymbolParameterTest conditionsMin.Typ.Max. Unit
(1)
I
S
I
L(off1)
I
L(off2)
I
L(off3)
I
L(off4)
1. Per device.
Table 6.Protections
Supply current
Off-state output currentV
Off-state output currentV
Off-state output current
Off-state output current
(1)
Off-state; V
= V
V
IN
Off-state; V
= V
V
IN
On-state; V
= 5 V; I
V
IN
= V
IN
= 0 V; V
IN
V
= V
IN
= 125 °C
T
j
V
= V
IN
=25 °C
T
j
= 13 V;
CC
= 0 V
OUT
= 13 V;
CC
= 0 V; Tj = 25°C
OUT
= 13 V;
CC
= 0 A
OUT
= 0 V 050µA
OUT
= 3.5 V -750µA
OUT
OUT
OUT
= 0 V; V
= 0 V; V
CC
CC
= 13 V;
= 13 V;
1240µA
1225µA
57mA
5µA
3µA
SymbolParameterTest conditionsMin.Typ.Max.Unit
T
T
T
Shutdown temperature150175200°C
TSD
Reset temperature135°C
T
R
Thermal hysteresis715°C
hyst
Status delay in overload
SDL
conditions
T
> T
j
TSD
20µs
V
= 13 V6915A
I
V
demag
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
Tabl e 7.VCC - output diode
Current limitation
lim
Turn-off output clamp
voltage
CC
5.5 V < V
I
OUT
< 36 V15A
CC
= 2 A; L = 6 mHV
-41V
CC
CC
-48 V
-55V
CC
SymbolParameterTest conditionsMin.Typ. Max.Unit
V
Forward on voltage-I
F
Table 8.Status pin
=1.3 A; Tj=150°C--0.6V
OUT
SymbolParameterTest conditionsMin. Typ. Max. Unit
V
STAT
I
LSTAT
C
STAT
Status low output voltageI
= 1.6 mA0.5V
STAT
Status leakage currentNormal operation; V
Status pin input capacitanceNormal operation; V
= 5 V10µA
STAT
= 5 V100pF
STAT
Doc ID 17546 Rev 28/27
Page 9
VND830P-EElectrical specifications
Table 8.Status pin (continued)
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
= 1 mA66.88V
V
Table 9.Switching (V
Status clamp voltage
SCL
CC
= 13 V)
SymbolParameterTest conditionsMin.Typ.Max. Unit
t
d(on)
t
d(off)
dV/dt
dV/dt
Table 10.Open-load detection
Turn-on delay time
Turn-off delay time
Turn-on voltage slope
(on)
Turn-off voltage slope
(off)
STAT
I
= - 1 mA-0.7V
STAT
= 6.5 Ω from VIN rising
R
L
edge to V
R
= 6.5 Ω from VIN falling
L
edge to V
= 6.5 Ω from V
R
L
to V
OUT
= 6.5 Ω from V
R
L
to V
OUT
= 1.3 V
OUT
= 11.7 V
OUT
= 10.4 V
= 1.3 V
OUT
OUT
= 1.3 V
= 11.7 V
-30-µs
-30-µs
See
-
-
Figure 14
See
Figure 15
-V/µs
-V/µs
SymbolParameterTest conditionsMin. Typ. Max. Unit
I
t
DOL(on)
V
t
DOL(off)
Table 11.Logic input
Open-load on-state detection
OL
threshold
Open-load on-state detection
delay
Open-load off-state voltage
OL
detection threshold
Open-load detection delay at
turn-off
= 5 V 50100200mA
V
IN
= 0 A 200µs
I
OUT
V
= 0 V1.52.53.5V
IN
1000µs
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
V
I
V
V
Input low level1.25V
IL
I
Low level input currentV
IL
Input high level3.25V
IH
High level input currentV
IH
Input hysteresis voltage0.5V
hyst
Input clamp voltage
ICL
= 1.25 V1µA
IN
= 3.25 V10µA
IN
I
= 1 mA 66.88V
IN
= -1 mA-0.7V
I
IN
Doc ID 17546 Rev 29/27
Page 10
VND830P-EElectrical specifications
Figure 4.Switching time waveforms
Table 12.Truth table
ConditionsInputOutputSense
Normal operation
Current limitation
Overtemperature
Undervoltage
Overvoltage
Output voltage > V
Output current < I
OL
OL
L
H
L
H
H
L
H
L
H
L
H
L
H
L
H
L
H
L
X
X
L
L
L
L
L
L
H
H
L
H
(T
(T
< T
j
> T
j
TSD
TSD
H
H
H
) H
) L
H
L
X
X
H
H
L
H
H
L
Doc ID 17546 Rev 210/27
Page 11
VND830P-EElectrical specifications
Table 13.Electrical transient requirements on V
ISO T/R
7637/1
test pulse
IIIIIIIVDelays and impedance
1-25 V-50 V-75 V-100 V
2+25 V+50 V+75 V+100 V
3a-25 V-50 V-100 V-150 V
3b+25 V+50 V+75 V+100 V0.1 µs, 50 Ω
4-4 V-5 V-6 V-7 V100 ms, 0.01 Ω
5+26.5V+46.5V+66.5V+86.5V400ms, 2Ω
Table 14.Electrical transient requirements on VCC pin (part 2)
Test levels
pin (part 1)
CC
2ms, 10Ω
0.2 ms, 10 Ω
0.1 µs, 50 Ω
ISO T/R
Test levels results
7637/1
test pulse
IIIIIIIV
1 CCCC
2 CCCC
3a CCCC
3b CCCC
4 CCCC
5CEEE
Table 15.Electrical transient requirements on VCC pin (part 3)
ClassContents
C
E
All functions of the device are performed as designed after exposure to
disturbance.
One or more functions of the device is not performed as designed after
exposure to disturbance and cannot be returned to proper operation without
replacing the device.
Doc ID 17546 Rev 211/27
Page 12
VND830P-EElectrical specifications
Figure 5.Waveforms
NORMAL OPERATION
INPUT
n
OUTPUT VOLTAGE
STATUS
n
V
CC
INPUT
n
OUTPUT VOLTAGE
STATUS
V
CC
INPUT
n
OUTPUT VOLTAGE
STATUS
n
n
n
n
V
USD
VCC<V
UNDERVOLTAGE
OVERVOLTAGE
OV
V
USDhyst
undefined
V
> V
CC
OV
INPUT
n
OUTPUT VOLTAGE
STATUS
n
INPUT
n
OUTPUT VOLTAGE
STATUS
n
T
j
INPUT
n
OUTPUT CURRENT
STATUS
n
OPEN-LOAD with external pull-up
V
> V
n
V
OL
OUT
OL
OPEN-LOAD without external pull-up
n
T
TSD
T
R
n
OVERTEMPERATURE
Doc ID 17546 Rev 212/27
Page 13
VND830P-EElectrical specifications
2.4 Electrical characteristics curves
Figure 6.Off-state output currentFigure 7.High level input current
IL(off1) (uA)
2.5
2.25
2
1.75
1.5
1.25
0.75
0.5
0.25
0
Figure 8.Input clamp voltageFigure 9.Status leakage current
Off state
Vcc=36V
Vin=Vout=0V
1
-50 -250255075 100 125 150 175
Tc (°C)
Vicl (V)
8
7.8
7.6
7.4
7.2
7
6.8
6.6
6.4
6.2
6
Iin=1mA
-50 -250255075 100 125 150 175
Tc (°C)
Iih (uA)
5
4.5
3.5
2.5
1.5
0.5
Vin=3.25V
4
3
2
1
0
-50 -250255075 100 125 150 175
Tc (°C)
Ilstat (uA)
0.05
0.04
Vstat=5V
0.03
0.02
0.01
0
-50 -250255075 100 125 150 175
Tc (°C)
Figure 10. Status low output voltageFigure 11. Status clamp voltage
Vstat (V)
0.8
0.7
Istat=1.6mA
0.6
0.5
0.4
0.3
0.2
0.1
0
-50 -250255075 100 125 150 175
Tc (°C)
Vscl (V)
8
7.8
7.6
7.4
7.2
6.8
6.6
6.4
6.2
Istat=1mA
7
6
-50 -250255075 100 125 150 175
Tc (°C)
Doc ID 17546 Rev 213/27
Page 14
VND830P-EElectrical specifications
Figure 12. Overvoltage shutdownFigure 13. I
Vov (V)
50
48
46
44
42
40
38
36
34
32
30
-50 -250255075 100 125 150 175
Ilim (A)
20
18
16
14
12
10
8
6
4
2
0
-50 -250255075 100 125 150 175
Tc (°C)
Figure 14. Turn-on voltage slopeFigure 15. Turn-off voltage slope
dVout/dt(on) (V/ms)
800
700
600
500
400
300
200
100
Vcc=13V
Rl=6.5Ohm
0
-50 -250255075 100 125 150 175
dVout/dt(off) (V/ms)
600
550
500
450
400
350
300
250
200
-50 -250255075 100 125 150 175
Tc (ºC)
vs T
LIM
Vcc=13V
Vcc=13V
Rl=6.5Ohm
case
Tc (°C)
Tc (ºC)
Figure 16. On-state resistance vs T
Ron (mOhm)
160
140
120
100
80
60
40
20
0
-50 -250255075 100 125 150 175
Iout=2A
Vcc=8V; 13V & 36V
Tc (°C)
case
Figure 17. On-state resistance vs V
CC
Ron (mOhm)
120
110
100
90
80
70
60
50
40
30
20
10
0
5 10152025303540
Tc=150°C
Tc=25°C
Tc= - 40°C
Iout=5A
Vcc (V)
Doc ID 17546 Rev 214/27
Page 15
VND830P-EElectrical specifications
Figure 18. Input high levelFigure 19. Input low level
Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
-50 -250255075 100 125 150 175
Tc ( ° C)
Figure 20. Open-load on-state detection
threshold
Iol (mA)
150
140
130
120
110
100
90
80
70
Vcc=13V
Vin=5V
-50 -250255075100 125 150 175
Tc ( ° C)
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -250255075 100 125 150 175
Tc (° C)
Figure 21. Open-load off-state detection
threshold
Vol (V)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
Vin=0V
-50 -250255075 100 125 150 175
Tc (°C)
Figure 22. Input hysteresis voltage
Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -250255075 100 125 150 175
Tc (°C)
Doc ID 17546 Rev 215/27
Page 16
VND830P-EApplication information
3 Application information
Figure 23. Application schematic
+5V
+5V
+5V
μ
R
prot
C
R
prot
R
prot
R
prot
STATUS1
INPUT1
STATUS2
INPUT2
V
CC
D
ld
OUTPUT1
D
OUTPUT2
GND
GND
R
V
GND
GND
3.1 GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1 Solution 1: a resistor in the ground line (R
This can be used with any type of load.
The following shows how to dimension the R
1.R
2. R
where - I
≤ 600 mV / (I
GND
≥ (-VCC) / (-I
GND
is the DC reverse ground pin current and can be found in the absolute
GND
S(on)max
GND
)
)
maximum rating section of the device’s datasheet.
GND
resistor:
GND
only)
Power dissipation in R
P
=(-VCC)2/R
D
(when VCC< 0 during reverse battery situations) is:
GND
GND
This resistor can be shared amongst several different HSD. Please note that the value of this
resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Doc ID 17546 Rev 216/27
Page 17
VND830P-EApplication information
Please note that, if the microprocessor ground is not common with the device ground, then
the R
produces a shift (I
GND
S(on)max
* R
) in the input thresholds and the status output
GND
values. This shift varies depending on how many devices are ON in the case of several highside drivers sharing the same R
GND
.
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using Section 3.1.2 described below.
3.1.2 Solution 2: a diode (D
A resistor (R
=1kΩ) should be inserted in parallel to D
GND
) in the ground line
GND
inductive load. This small signal diode can be safely shared amongst several different HSD.
Also in this case, the presence of the ground network produce a shift (~600 mV) in the input
threshold and the status output values if the microprocessor ground is not common with the
device ground. This shift does not vary if more than one HSD shares the same
diode/resistor network. Series resistor in INPUT and STATUS lines are also required to
prevent that, during battery voltage transient, the current exceeds the absolute maximum
rating. Safest configuration for unused INPUT and STATUS pin is to leave them
unconnected.
3.2 Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
maximum DC rating. The same applies if the device is subjected to transients on the
CC
V
line that are greater than those shown in Tab l e 1 3 .
CC
3.3 MCU I/O protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins are pulled negative. ST suggests to insert a resistor (R
the microcontroller I/O pins from latching up.
if the device is driving an
GND
) in line to prevent
prot
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os:
-V
CCpeak
/ I
latchup
≤ R
prot
≤ (V
OHμC
- V
IH
- V
GND
) / I
IHmax
Example
For the following conditions:
V
CCpeak
I
latchup
V
OHμC
5kΩ ≤ R
The recommended values are:
R
prot
= -100 V
≥ 20 mA
≥ 4.5 V
prot
= 10 kΩ
≤ 65 kΩ.
Doc ID 17546 Rev 217/27
Page 18
VND830P-EApplication information
3.4 Open-load detection in off-state
Off-state open-load detection requires an external pull-up resistor (RPU) connected between
OUTPUT pin and a positive supply voltage (V
microprocessor.
The external resistor has to be selected according to the following requirements:
1.No false open-load indication when load is connected: in this case
it needs to avoid V
V
OUT
= (V
/ (RL + RPU))RL < V
PU
to be higher than V
OUT
Olmin.
2. No misdetection when load is disconnected: in this case the V
V
Because I
up resistor R
; this results in the following condition R
OLmax
may significantly increase if V
s(OFF)
should be connected to a supply that is switched OFF when the module is in
PU
standby.
) like the +5 V line used to supply the
PU
; this results in the following condition
Olmin
has to be higher than
< (V
PU
is pulled high (up to several mA), the pull-
out
PU
- V
OUT
OLmax
) / I
L(off2)
.
The values of V
OLmin
, V
OLmax
and I
are available in Chapter 2: Electrical specifications.
L(off2)
Figure 24. Open-load detection in off-state
IN PUT
STATUS
DRIVER
+
LOGIC
+
-
GROUND
V batt.VPU
V
CC
I
L(o ff2)
OUT
R
V
OL
R
PU
R
L
Doc ID 17546 Rev 218/27
Page 19
VND830P-EApplication information
3.5 Maximum demagnetization energy
Figure 25. SO-16L maximum turn-off current versus load inductance
I
LM A X ( A)
100
10
A
B
C
1
0,1110100
A = single pulse at T
Jstart
B= repetitive pulse at T
C= repetitive pulse at T
Conditions:
= 13.5 V
V
CC
VIN, I
L
Note:
Values are generated with RL = 0 Ω.
In case of repetitive pulses, T
specified above for curves B and C.
Demagnetization
(at beginning of each demagnetization) of every pulse must not exceed the temperature
jstart
= 150 °C
Jstart
Jstart
= 100 °C
= 125 °C
L( m H )
Demagnetization
Demagnetization
t
Doc ID 17546 Rev 219/27
Page 20
VND830P-EPackage and PCB thermal data
4 Package and PCB thermal data
4.1 SO-16L thermal data
Figure 26. SO-16L PC board
Note:
Layout condition of R
35 µm, Copper areas: 0.5 cm
Figure 27. R
RTH j-amb (°C/W)
70
and Zth measurements (PCB FR4 area = 41 mm x 48 mm, PCB thickness = 2 mm, Cu thickness =
th
2
, 6 cm2).
vs PCB copper area in open box free air condition
thj-amb
65
(1)
60
55
50
45
40
01234567
PCB Cu heatsink area (cm^2)
Doc ID 17546 Rev 220/27
Page 21
VND830P-EPackage and PCB thermal data
Figure 28. SO-16 L thermal impedance junction ambient single pulse
Equation 1
Z
THδ
where
: pulse calculation formula
RTHδ Z
THtp
1 δ–()+⋅=
δtpT⁄=
Figure 29. Thermal fitting model of a quad channel HSD in SO-16L
Tj_1
Pd1
Tj_2
C1
C1C2
R1
Pd2
C3C4
R3R1R6R5R2
R2
R4
T_amb
C5C6C2
Doc ID 17546 Rev 221/27
Page 22
VND830P-EPackage and PCB thermal data
Table 16.Thermal parameters
Area/ island (cm2)Footprint6
R1 (°C/W)0.05
R2 (°C/W)0.3
R3 (°C/W)2.2
R4 (°C/W)12
R5 (°C/W)15
R6 (°C/W)3722
C1 (W.s/°C)0.001
C2 (W.s/°C)5.00E-03
C3 (W.s/°C)0.02
C4 (W.s/°C)0.3
C5 (W.s/°C)1
C6 (W.s/°C)35
Doc ID 17546 Rev 222/27
Page 23
VND830P-EPackage and packing information
5 Package and packing information
5.1 ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
5.2 SO-16L package information
Figure 30. SO-16L package dimensions
Doc ID 17546 Rev 223/27
Page 24
VND830P-EPackage and packing information
Table 17.SO-16L mechanical data
mm.
DIM.
Min.Typ.Max.
A2.65
a10.10.2
a22.45
b0.350.49
b10.230.32
C0.5
c145° (typ.)
D10.110.5
E10.010.65
e1.27
e38.89
F7.47.6
L0.51.27
M0.75
S8° (max.)
Doc ID 17546 Rev 224/27
Page 25
VND830P-EPackage and packing information
5.3 SO-16L packing information
Figure 31. SO-16L tube shipment (no suffix)
Base Q.ty50
Bulk Q.ty1000
C
B
A
Figure 32. Tape and reel shipment (suffix “TR”)
Tube length (± 0.5)532
A3.5
B13.8
C (± 0.1)0.6
Reel dimensions
Base Q.ty1000
Bulk Q.ty1000
A (max)330
B (min)1.5
C (± 0.2)13
F20.2
G (+ 2 / -0)16.4
N (min)60
T (max)22.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
22-Sep-20102Changed document status from preliminary data to datasheet.
Doc ID 17546 Rev 226/27
Page 27
VND830P-E
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