Datasheet VND81013TR, VND810 Datasheet (SGS Thomson Microelectronics)

®

July 2002 1/19

VND810

DOUBLE CHANNEL HIGH SIDE DRIVER

■ CMOS COMPATIBLE INPUTS

■ OPEN DRAIN STATUS OUTPUTS

■ ON STATE OPEN LOAD DETECTION

■ OFF STATE OPEN LOAD DETECTION

■ SHORTED LOAD PROTECTION

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUTDOWN

■ PROTECTION AGAINST LOSS OF GROUND

■ VERY LOW STAND-BY CURRENT

■ REVERSE BATTERY PROTECTIO N (**)

DESCRIPTION

The VND810 is a monolithic device designe d in
STMicroelectronics VIPower M0-3 Technology,
intended for driving any kind of load with one side
connected to ground.
Active VCC pin voltag e clamp protects th e dev ice
against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation

combined with thermal shutdown and automatic
restart protects the device against overloa d. The
device detects open load condition both in on and
off state. Output shorted to VCC is detected in the
off state. Dev ice auto mati cally tur ns off in c ase of
ground pin disconnection.

TYPE R

DS(on)

I

OUT

V

CC

VND810 160 mΩ (*) 3.5 A (*) 36 V

SO-16

ORDER CODES

PACKAGE TUBE T&R

SO-16

VND810 VND81013TR

(*) Per each channel

BLO C K DIAG RA M

(**) See appl ic ation schema tic at page 8

OVERTEMP. 1

V

cc

GND

INPUT1

OUTPUT1

OVERVOLTAGE

LOGIC

DRIVER 1

STATUS1

V

cc

CLAMP

UNDERVOLTAGE

CLAMP 1

OPENLOAD ON 1

CURRENT LIMITER 1

OPENLOAD OFF 1

OUTPUT2

DRIVER 2

CLAMP 2

OPENLOAD ON 2

OPENLOA D OFF 2

OVERTEMP. 2

INPUT2

STATUS2

CURRENT LIMITER 2

2/19

VND810

ABSOLUTE MAXIMUM RATI NG

CONNECTION DIAGRAM (TOP VIEW)

CURRENT AND VOLTAGE CONVENTIONS

Symbol Parameter Value Unit

V

CC

DC Supply Voltage 41 V

- V

CC

Reverse DC Supply Voltage - 0.3 V

- I

GND

DC Reverse Ground Pin Current - 200 mA

I

OUT

DC Output Current Internally Limited A

- I

OUT

Reverse DC Output Current - 6 A

I

IN

DC Input Current +/- 10 mA

I

stat

DC Status Cur rent +/- 10 mA

V

ESD

Electros tatic Discharge (Hum an Body Model: R=1.5KΩ; C=100pF)

- INPUT

- STATUS

- OUTPU T

- V

CC

4000
4000
5000
5000

V
V
V
V

E

MAX

Maximum Switching Energy
(L=1.5mH; R

L

=0Ω; V

bat

=13.5V; T

jstart

=150ºC; IL=5A)

26 mJ

P

tot

Powe r Dissipation TC=25°C 8.3 W

T

j

Junction Operating Temperature Internally Limited °C

T

c

Case Operating Temperature - 40 to 150 °C

T

stg

Storage Temperature - 55 to 150 °C

V

CC

V

CC

OUTPUT 2

OUTPUT 2

OUTPUT 1

V

CC

OUTPUT 1

V

CC

V

CC

INPUT 2

STA TUS 2

ST ATUS 1

INPUT 1

V

CC

GND

N.C.

1

8

9

16

I

S

I

GND

OUTPUT 2

V

CC

GND

STATUS 2

INPUT 2

I

OUT2

I

IN2

I

STAT2

V

STAT2

V

IN2

V

CC

V

OUT2

OUTPUT 1

I

OUT1

V

OUT1

INPUT 1

I

IN1

STATUS 1

I

STAT1

V

IN1

V

STAT 1

3/19

VND810

THERMAL DATA

(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal

mounting an d no ar tificial ai r flow.

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C < Tj <150°C, unless otherwise specified)

(Per each channel)
POWER OUTPUTS

(**) Per device

SWITCHING (VCC=13V)

LOGIC INPUT

Symbol Parameter Value Unit

R

thj-lead

Thermal R esistanc e Junctio n-lead 15 °C/W

R

thj-amb

Thermal Resistance Junctio n-ambient 75 (*) °C/W

Symbol Parameter Test Conditions Min Typ Max Unit

V

CC

(**) Operating Supply Voltage 5.5 13 36 V

V

USD

(**) Under Voltage Shut-down 3 4 5.5 V

V

OV

(**) Ove rvoltage Shut-down 36 V

R

ON

On State Resistance

I

OUT

=1A; Tj=25°C

I

OUT

=1A; VCC>8V

160
320

mΩ
mΩ

I

S

(**) Supply Current

Off State; V

CC

=13V; VIN=V

OUT

=0V

Off State; V

CC

=13V; VIN=V

OUT

=0V;

Tj=25°C

On State; V

CC

=13V; VIN=5V; I

OUT

=0A

12

12

5

40

25

7

µA

µA

mA

I

L(off1)

Off State Output Curr ent VIN=V

OUT

=0V 0 50 µA

I

L(off2)

Off State Output Curr ent VIN=0V; V

OUT

=3.5V -75 0 µA

I

L(off3)

Off State Output Curr ent VIN=V

OUT

=0V; Vcc=13V; Tj =125°C 5 µA

I

L(off4)

Off State Output Curr ent VIN=V

OUT

=0V; Vcc=13V; Tj =25°C 3 µA

Symbol Parameter Test Conditions Min Typ Max Unit

t

d(on)

Turn-on Delay Time

RL=13Ω from VIN rising ed ge to
V

OUT

=1.3V

30 µs

t

d(off)

Turn-off Delay Time

RL=13Ω from VIN falling edge to
V

OUT

=11.7V

30 µs

dV

OUT

/dt

(on)

Turn-on Voltage Slope

RL=13Ω from V

OUT

=1.3V to

V

OUT

=10.4V

See

relative

diagram

V/µs

dV

OUT

/dt

(off)

Turn-off Voltag e Slope

RL=13Ω from V

OUT

=11.7V to

V

OUT

=1.3V

See

relative

diagram

V/µs

Symbol Param eter Test Conditions Min Typ Max Unit

V

IL

Input Low Level 1.25 V

I

IL

Low Level Input Current VIN = 1.25V 1 µA

V

IH

Input High Level 3.25 V

I

IH

High Level Input Curr ent VIN = 3.25V 10 µA

V

I(hyst)

Input Hyst eresis Voltage 0.5 V

V

ICL

Input Clamp Voltage

I

IN

= 1mA

I

IN

= -1mA

66.8

-0.7

8V

V

1

4/19

VND810

ELECTRICAL CHARACTERISTICS (continued)

STATUS PIN

PROTECTIONS

OPENLOAD DETECTION

Symbol Parameter Test Conditions Min Typ Max Unit

V

STAT

Status Low Output Voltage I

STAT

= 1.6 mA 0.5 V

I

LSTAT

Status Leakage Current Normal Operation; V

STAT

= 5V 10 µA

C

STAT

Status Pin Input
Capacitance

Normal Operation; V

STAT

= 5V 100 pF

V

SCL

Status Clamp Voltage

I

STAT

= 1mA

I

STAT

= - 1mA

66.8

-0.7

8V

V

Symbol Parame ter Test Condit ions Min Typ Max Unit

T

TSD

Shut-down Temperature 150 175 200 °C

T

R

Reset Temp erature 135 °C

T

hyst

Ther ma l Hy steresi s 7 15 °C

t

SDL

Status Delay in Overload
Conditions

Tj>T

TSD

20 µs

I

lim

Current limitation

5.5V<V

CC

<36V

3.5 5 7.5

7.5

A
A

V

demag

Turn-off Output Clamp
Voltage

I

OUT

=1A; L= 6m H VCC-41 VCC-48 VCC-55 V

Symbol Param eter Test Conditions Min Typ Max Unit

I

OL

Openload ON State
Detectio n Threshol d

V

IN

=5V 20 40 80 mA

t

DOL(on)

Openload ON State
Detection Delay

I

OUT

=0A 200 µs

V

OL

Openload OFF State
Voltage Detection
Threshold

VIN=0V 1.5 2.5 3.5 V

t

DOL(off)

Openload Detection Delay
at Turn Off

1000 µs

2

V

INn

V

STAT n

t

DOL(off)

OPEN LOAD STATUS TIMING (with external pull-up)

V

INn

V

STAT n

OVERTEMP ST ATUS TIMING

t

SDL

t

SDL

I

OUT

< I

OL

V

OUT

> V

OL

t

DOL(on)

Tj > T

TSD

5/19

VND810

t

t

V

OUTn

V

INn

80%

10%

dV

OUT

/dt

(on)

t

d(off)

90%

dV

OUT

/dt

(off)

t

d(on)

Switching time Waveforms

TRUTH TABLE

CONDITIONS INPUT OUTPUT STATUS

Normal Operation

L

H

L

H

H
H

Current Limitation

L
H
H

L
X
X

H

(T

j

< T

TSD

) H

(T

j

> T

TSD

) L

Overtemperature

L

H

L

L

H
L

Undervoltage

L

H

L

L

X
X

Overvoltage

L

H

L

L

H
H

Output Voltage > V

OL

L

H

H
H

L
H

Output Current < I

OL

L

H

L
H

H
L

6/19

VND810

ELECTRICAL TRANS IENT REQUIREMENTS ON VCC PIN

ISO T/R 7637/1

Test Pulse

TEST LEVELS

I II III IV Delays and

Impedance

1 -25 V -50 V -75 V -100 V 2 ms 10 Ω

2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω
3a -2 5 V - 50 V - 100 V -150 V 0.1 µs 50 Ω
3b + 25 V +50 V +75 V +100 V 0.1 µs 50 Ω

4 -4 V -5 V -6 V -7 V 100 ms, 0.01

Ω

5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2

Ω

ISO T/R 76 37 / 1

Test Pulse

TEST LEVELS RESULTS

I II III IV

1CCCC

2CCCC
3aCCCC
3bCCCC

4CCCC

5CEEE

CLASS CONTENTS

C All func tions of the device are performed as desi gned afte r exposure to disturbance.
E One or more f unctions of the device is not per formed as designe d after exp osure and cannot be

returned to prop er operation withou t replacing the device.

7/19

VND810

1

OPEN LOAD without external pull-up

STATUS

n

INPUT

n

NORMAL OPERATION

UNDERVOLTAGE

V

CC

V

USD

V

USDhyst

INPUT

n

OVERVOLTAGE

V

CC

STATUS

n

INPUT

n

STATUS

n

STATUS

n

INPUT

n

STATUS

n

INPUT

n

OPEN LOAD wi th external pull-up

undefined

OVERTEMPE RATURE

INPUT

n

STATUS

n

T

TSD

T

R

Figure 1: Waveforms

T

j

OUTPUT VOLTAGE

n

VCC<V

OV

OUTPUT VOLTAGE

n

OUTPUT VOLTAGE

n

OUTPUT VOLTAGE

n

OUTP U T VO LTAGE

n

OUTPUT CURRENT

n

V

OUT>VOL

V

OL

VCC>V

OV

8/19

VND810

GND PROTECTION NETWORK AGAINST
REVERSE BATTERY

Soluti on 1: Resistor in the ground line (R

GND

only). This

can be us ed with any t ype of load .
The fo llowin g is an indica tion on how to dim ension the

R

GND

resistor.

1) R

GND

≤ 600mV / I

S(on)max

.

2) R

GND

≥ (−VCC) / (-I

GND

)

where -I

GND

is the DC re vers e grou nd pi n cu rren t an d can

be found in the absolute maximum rating section of the

device’s datasheet.
Power Dissipation in R

GND

(when VCC<0: during reverse

battery situations) is:
P

D

= (-VCC)2/R

GND

This resistor can be shared amongst several different
HSD. Please note that the value of this resis t o r sh ould be
calcul ated with form ula (1) wher e I

S(on)max

becomes t he
sum of the maximum on-state currents of the different
devices.

Please note that if the microprocessor ground is not
common with the device ground then the R

GND

will

produce a shift (I

S(on)max

* R

GND

) in the input thresholds

and the status output values. This shift will vary

depending on how man y devic es are ON in the ca se of
several high side drivers s haring the same R

GND

.

If the calculated power dissipation leads to a large resistor
or seve ral de vic es have to s hare t he s ame r esisto r then
the ST suggests to uti li ze Solution 2 (see below).

Solution 2:

A diode (D

GND

) in the gro und line.

A resistor (R

GND

=1kΩ) should be inserted in parallel to

D

GND

if the devi ce will be driving an inductive load.

This small signal diode can be safely shared amongst
several different HSD . Also in this case, the presence of
the ground network wi ll produce a shift (

j

600mV) in t he
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor netw ork.

LOAD DUMP PROTECTION

Dld is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds VCC max DC rating. The
same applies if the device will be subject to transients on
the VCC line that are grea ter tha n the ones sh own in the
ISO T/R 7637/1 table.

APPLICATION SCHEMATIC

V

CC

OUTPUT2

D

ld

+5V

R

prot

OUTPUT1

STA T US1

INPUT1

+5V

STA TUS2

INPUT2

GND

+5V

µ

C

R

prot

R

prot

R

prot

D

GND

R

GND

V

GND

9/19

VND810

µ

C I/Os PROTECTION:

If a ground protection network is used and negative
transients are present on the VCC line, the control pins will
be pulled negative. ST suggests to insert a resistor (R

prot

)

in line to prevent the µC I/Os pins to latch-up.
The valu e of these res istors is a compromise between

the leakage cur rent of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up limit
of µC I/Os.

-V

CCpeak/Ilatchup

≤ R

prot

≤ (V

OHµC-VIH-VGND

) / I

IHmax

Calculation example:
For V

CCpeak

= - 100V an d I

latchup

≥ 20mA; V

OHµC

≥ 4.5V

5kΩ ≤ R

prot

≤ 65kΩ.

Recommended R

prot

value is 10kΩ.

10/19

VND810

OPEN LOAD DETECTION IN OFF STATE

Off state open load detection requires an external pull-up
resistor (R

PU

) connected between OUTPUT pin and a

positive supply voltage (V

PU

) like the +5 V line used to

supply the microprocessor.
The external resistor has to be selected according to the
following requirements:

1) no f al se op en load i nd icat ion wh en load i s co nne cted :
in thi s case we have to avoi d V

OUT

to be hi gher than

V

Olmin

; this results in the following condition

V

OUT

=(VPU/(RL+RPU))RL<V

Olmin.

2) no misdetection when load is disconnected: in this
case the V

OUT

has to be higher than V

OLmax

; this

results in the following condition R

PU

<(V

PU–VOLma x

)/

I

L(off2)

.

Beca us e I

s(OFF)

may si gn ifi c a ntly increase if V

out

is pulled

high (up t o several mA ), the pul l-up resi stor R

PU

should

be conne cted t o a su pp ly t ha t is swit ch ed OFF when t h e
module is in standby.
The values of V

OLmin

, V

OLmax

and I

L(off2)

are available in

the Electrical Characteristics section.

V

OL

V batt. VPU

R

PU

R

L

R

DRIVER

+

LOGIC

+

-

INPUT

STATUS

V

CC

OUT

GROUND

I

L(off2)

Open Load detection in off state

11/19

VND810

High Level Input Current

Input Clamp Voltage Status Leakage Current

Off State Output Current

Status Clamp VoltageStatus Low Output Voltage

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Iih (uA)

Vin=3.25V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

6

6.2

6.4

6.6

6.8

7

7.2

7.4

7.6

7.8

8

Vicl (V)

Iin=1mA

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

0.01

0.02

0.03

0.04

0.05

Ilstat (uA)

Vstat=5V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

Vstat (V)

Istat=1.6mA

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

6

6.2

6.4

6.6

6.8

7

7.2

7.4

7.6

7.8

8

Vscl (V)

Istat=1mA

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0

0.16

0.32

0.48

0.64

0.8

0.96

1.12

1.28

1.44

1.6

IL(off1) (uA)

Off state

Vcc=36V

Vin=Vout=0V

12/19

VND810

Input Hysteresis VoltageInput Low Level

On State Resistance Vs T

case

On State Resistance Vs V

CC

Input High LevelOpenload On State Detection Threshold

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

2

2.2

2.4

2.6

2.8

3

3.2

3.4

3.6

Vih (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

Vil (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

Vhyst (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

10

15

20

25

30

35

40

45

50

55

60

Iol (mA)

Vcc=13V

Vin=5V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

50

100

150

200

250

300

350

400

Ron (mOhm)

Iout=0.5A

Vcc=8V; 13V & 36V

5 10152025303540

Vcc (V)

50

75

100

125

150

175

200

225

250

275

300

Ron (mOhm)

Iout=0.5A

Tc= - 40°C

Tc= 25°C

Tc= 150°C

13/19

VND810

Overvoltage Shutdown

Turn-on Voltage Slope Turn-off Voltage Slope

I

LIM

Vs T

case

Openload Off State Voltage Detection Threshold

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

30

32

34

36

38

40

42

44

46

48

50

Vov (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Vol (V)

Vin=0V

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0

100

200

300

400

500

600

700

800

900

1000

dVout/dt(on) (V/ms)

Vcc=13V

Rl=13Ohm

-50 -25 0 25 50 75 100 125 150 175

Tc (ºC)

0

50

100

150

200

250

300

350

400

450

500

dVout/dt(off) (V/ms)

Vcc=13V

Rl=13Ohm

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0

1

2

3

4

5

6

7

8

9

10

Ilim (A)

Vcc=13V

14/19

VND810

Maximum turn off current versus load inductance

A = Single Pulse at T

Jstart

=150ºC

B= Repetitive pulse at T

Jstart

=100ºC

C= Repetitive Pulse at T

Jstart

=125ºC

Conditions:
VCC=13.5V

Values are generated with RL=0Ω
In case of repetitive pulses, T

jstart

(at beginning of each demagnetization) of every pulse must not exceed

the temperature specified above for curves B and C.

VIN, I

L

t

Demagnetization

Demagnetization

Demagnetization

1

10

0.1 1 10 100
L(mH)

I

LMAX (A)

A

B

C

15/19

VND810

SO-16 PC Boar d

R

thj-amb

Vs PCB copper area in open box free air condition

SO-16 THERMAL DATA

Layout condition of Rth and Zth measur ements (PCB FR4 area= 58mm x 58mm , PCB thick ness=1.6mm,
Cu thickness=35µm, Copper areas: 0.26cm

2

, 4cm2).

40

45

50

55

60

65

70

75

80

85

012345

PC B Cu heatsink area (cm^2 )

RTH j-amb

(°C/W)

16/19

VND810

Thermal fitting model of a doubl e channel H SD
in SO-16

Pulse calculation formula

Thermal Parameter

Area/island (cm2)0.54

R1 (°C/W) 0.35
R2 (°C/W) 1.8
R3 ( °C/W) 4.5
R4 (°C/W) 10
R5 (°C/W) 16
R6 (°C/W) 48 25
C1 (W.s/°C) 0.0001
C2 (W.s/°C) 7.00E-04
C3 (W.s/°C) 6.00E-03
C4 (W.s/°C) 0.2
C5 (W.s/°C) 0.7
C6 (W.s/°C) 2 4

Z

THδ

RTHδ Z

THtp

1 δ–()+⋅=

where

δ tpT⁄=

SO-16 Thermal Impedance Junction Ambient Single Pulse

T_amb

Pd1

C1

R4

C3 C4

R3R1 R6R5R2

C5 C6C2

Pd2

R2

C1 C2

R1

Tj_1

Tj_2

0.01

0.1

1

10

100

1000

0.0001 0.001 0.01 0.1 1 10 100 1000
Tim e (s)

ZTH (°C/W)

0.26 cm

2

4 cm

2

17/19

VND810

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 1.75 0.068
a1 0.1 0.2 0.004 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.019
c1 45° (typ.)

D 9.8 10 0.385 0.393

E 5 .8 6.2 0.228 0.244

e 1.27 0.050

e3 8.89 0.350

F 3.8 4.0 0.149 1.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.05 0

M 0.62 0.024

S8° (max.)

SO-16 MECHANICAL DATA

18/19

VND810

SO-16 TUBE SHIPMENT (no suffi x)

1

All dimensions are in mm.

Base Q.ty 50
Bulk Q.ty 1000
Tube length (± 0.5) 532

A 3.2
B 6
C (± 0.1) 0.6

TAPE AND REEL SHIPMENT (suf fix “13TR”)

All dimensions are in mm.

Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 16.4
N (min) 60
T (max) 22.4

TAPE DIMENSIONS

According to Electronic Industries Associat ion
(EIA) S tandard 481 rev. A, Feb 1986

All dimensions are in mm.

Tape width W 16
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 7.5
Compartment Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2

Top

cover

tape

End

Start

No componentsNo components Components

500mm min

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

REEL DIMENSIONS

C

B

A

19/19

VND810

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subject to c hange without notice. T his publication supersedes and replac es all information pr ev iously supplied. STMicroelectr on ics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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