Datasheet VND7NV04-1, VND7NV04, VNS7NV04, VNN7NV04 Datasheet (SGS Thomson Microelectronics)

®

VNN7NV04 / VNS7NV04

/ VND7NV 04 / VND7NV0 4-1

“OMNIFET II”:

FULLY AUTOPROTECTED POW ER M OSFET

TYPE R

VNN7NV04
VNS7NV04
VND7NV04
VND7NV04-1

n

LINEAR CURRENT LIMITATION

n

THERMAL SHUT DOWN

n

SHORT CIRCUIT PROTECTION

n

INTEGRATED CLAMP

n

LOW CURRENT DRAWN FRO M INPUT PIN

n

DIAGNOSTIC FEEDBACK THROUGH INPUT

DS(on)

60 mΩ 6 A 40 V

I

lim

V

clamp

PIN

n

ESD PROTECTION

n

DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

n

COMPATIBLE WITH STANDARD POWER

MOSFET

DESCRIPTION

The VNN7NV04, VNS7NV04, VND7NV04
VND7NV04-1, are mon ol ithi c devic es desi g ned in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power

BLOCK DIAGRAM

2

3

2

1

SOT-223

3

1

TO25 2 (D PAK)

SO-8

TO251 (IPAK)

3

2

1

ORDER CODES

PACKAGE TUBE T&R

SOT-223 VNN7NV04 VNN7NV0413TR

SO-8 VNS7NV04 VNS7NV0413TR

TO-252 (DPAK) VND7NV04 VND7NV0413TR
TO-251 (IP AK) VND7NV04-1

-

MOSFETS from DC up to 50KHz applications.
Built in thermal shutdown, l inear curren t limitation
and overvoltage cla mp protects the chip in harsh
environments.
Fault feedback can be de tected by mon itori ng the
voltage at the input pin.

DRAIN

2

Overvoltage

Clamp

INPUT

1

Februa ry 2003 1/29

Gate

Control

Over

T emperature

Linear

Current

Limiter

3

SOURCE

FC01000

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

ABSOLUTE MAXIMUM RATI NG

Symbol Parameter

Drain-source Voltage (VIN=0V) Intern ally Clamped V
Input Voltage Internally Clamped V

IN

Input Current +/-20 mA
Minimum I nput Series Impedance 150 Ω
Drain Current Internally Limited A
Reverse DC Output Current -10.5 A
Electros tatic Discharge (R=1.5KΩ, C=100pF) 4000 V
Electros tatic Discharge on output pin only

(R=330Ω, C=150pF)
Total Dissipation at Tc=25°C 7 4.6 60 W

tot

Maximum Switching Energy (L=0.7mH;
RL=0Ω; V

=13.5V; T

bat

=150ºC; IL=9A)

jstart

Maximum Switching Energy (L=0.6mH;
RL=0Ω; V

Operating Junction Temperature Internally limited °C

j

Case Operating Temperature Internally limit ed °C

c

=13.5V; T

bat

=150ºC; IL=9A)

jstart

Storage Temperatu re -55 to 150 °C

R

V
V

E

E

V

DS

V

I

IN

IN MIN

I

D

I

R

ESD1

ESD2

P

MAX

MAX

T

T

T

stg

CONNECTION DIAGRAM (TO P VI EW)

SOT-223 SO-8 DPAK/IPAK

Value

Unit

16500 V

40 40 mJ

37 mJ

SOURCE
SOURCE
SOURCE
INPUT

1

4

SO-8 Package (*)

(*) For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page 1.

CURRENT AND VOLTAGE CONVEN TIO NS

R

I

IN

V

IN

IN

INPUT

8

5

DRAIN

SOURCE

DRAIN
DRAIN
DRAIN
DRAIN

I

D

V

DS

2/29

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

THERMAL DATA

Symbol Parameter

R

thj-case

R

thj-lead

R

thj-amb

(*) When mounted on a standard single-sided FR4 board with 0.5cm

Thermal R esistance Junction-case}} } MAX 18 2.1 2.1 °C/W

Thermal R esistance Junction-lead MAX 27 °C/W
Ther ma l R esistan ce J u nction-ambient MAX 96 (*) 90 (*) 65 (*) 102 °C/W

SOT-223 SO-8 DPAK IPAK

2

of Cu (at least 35 µm thick) connected to all DRAIN pins.

ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)
OFF

Symbol Parameter Test Conditions Min Typ Max Unit

V

CLAMP

V

CLTH

V

INTH

I

ISS

V

INCL

I

DSS

Drain-source Clamp
Voltage

Drain-source Clamp
Threshold Voltage

Input Thre shold Voltage VDS=VIN; ID=1mA 0. 5 2.5 V
Supply Current from Input

Pin
Input-Source Clamp

Voltage
Zero Input Voltage Drain

Current (VIN=0V)

VIN=0V; ID=3.5A 40 45 55 V

VIN=0V; ID=2mA 36 V

=0V; VIN=5V 100 150 µA

V

DS

I

=1mA

IN

I

=-1mA

IN

V

=13V; VIN=0V; Tj=25°C

DS

V

=25V; VIN=0V

DS

Value

6

-1.0

6.8 8

-0.3
30
75

Unit

V

µA

ON

Symbol Parameter Test Conditions Min Typ Max Unit

V

R

DS(on)

Static Drain-source On
Resistance

=5V; ID=3.5A; Tj=25°C

IN

V

=5V; ID=3.5A

IN

60

120

mΩ

3/29

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)

DYNAMIC

Symbol Parameter Test Conditions Min Typ Max Unit

gfs (*)
C

OSS

SWITCHING

Symbol Parameter Test Conditi ons Min Typ Max Unit

t

d(on)

t

t

d(off)

t

t

d(on)

t

t

d(off)

t

(dI/dt)

Q

Forward
Transconductanc e

VDD=13V; ID=3.5A 9 S

Output Capacitance VDS=13V; f=1MHz; VIN=0V 220 pF

Turn-on Delay Time
Rise Time 470 1500 ns

r

Turn-off Delay Time 500 1500 ns
Fall Time 350 1000 ns

f

Turn-on Delay Time
Rise Time 4.6 14.0 µs

r

Turn-off Delay Time 5.4 16.0 µs
Fall Time 3.6 11.0 µs

f

Turn-on Current Slope

on

Total Input Charge

i

=15V; ID=3.5A

V

DD

V

=5V; R

gen

gen=RIN MIN

(see figure 1)

=15V; ID=3.5A

V

DD

V

gen

=5V; R

gen

=2.2K Ω

(see figure 1)

=15V; ID=3.5A

V

DD

V

=5V; R
V
I

gen
DD

gen

gen=RIN MIN

=12V; ID=3.5A; VIN=5V

=2.13m A (see figure 5)

=150Ω

=150Ω

100 300 ns

0.75 2.3 µs

6.5 A/µs

18 nC

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions M in Typ Max Uni t

(*) Forward On Voltage ISD=3.5A; VIN=0V 0.8 V

V

SD

Q

I

RRM

t

Reverse Recovery Time ISD=3.5A; dI/dt=20A/µs

rr

Reverse Recovery Charge 0.28 µC

rr

Reverse Recovery Current 2.5 A

V

=30V; L= 20 0 µ H

DD

(see test circuit, figure 2)

220 ns

PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)

Symbol Parameter Test Conditions M in Typ Max Uni t

I

lim

t

dlim

T

T

I

E

(*) Pulsed: Pu ls e duration = 300µs, duty c y c le 1.5%

Drain Current Limit VIN=5V; VDS=13V 6 9 12 A

=5V; VDS=13V

Step Response Current
Limit

Overtemperature

jsh

Shutdown

Overtemperature Reset 135 °C

jrs

Fault Sink Current VIN= 5V; VDS=13V; Tj=T

gf

Sing l e Pu lse

as

Avala nche Energy

V

IN

starti ng T
V

IN

=25°C; VDD=24V

j

=5V; R

gen=RIN MIN

(see figures 3 & 4)

jsh

=150Ω; L=24mH

4.0 µs

150 175 200 °C

15 mA

200 mJ

4/29

2

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

PROTECTION FEATURES

During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.

The device then behaves like a standard power
MOSFET and can be used as a switch from DC to

50KHz. The only difference from the user’s
standpoint is that a small DC current I
100µA) flows into the INPUT pin in order to supply

ISS

(typ.

the internal circuitry.
The de vice integrates:

- OVERVOLTAGE CLAMP PROTECTION:
internally set at 45V, along with the rugged
avalanche characteristics o f the Power MOSFET
stage giv e this device unrivall ed ruggedne ss and
energy handl ing capability. This feat ure is mainly
important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current ID to I
voltage. When the current limiter is active, the

whatever the INPUT pin

lim

device operates in the linear region, so power
dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
junction temperature may reach the
overtemperature threshold T

jsh

.

- OVERTEMPERATURE AND SHORT CIRCUI T
PROTECTION: these are based on sensing the
chip temperature and are not dependent on the
input voltage. The location of the sensi ng eleme nt
on the chip in the power st age ar ea ensures f ast,
accurate detection of the junction temperature.
Overtemperatur e cut-out occurs i n the range 1 50
to 190 °C, a typical value being 170 °C. The device
is automatically restarted when the chip
temperature fa lls of about 15°C be low shut-d own
temperature.

- STATUS FEEDBACK: in the case of an
overtemperature fault condition (Tj > T
device tries to sink a diagnostic current Igf thro ug h

jsh

), the

the INPUT pin in order to indicate fault condition. If
driven from a l ow impedance sou rce, this curre nt
may be used in orde r to warn the contr ol circ uit of
a device shut down. If the drive impeda nc e is h i gh
enough so that the INPUT pin dri ver is not abl e to
supply the current Igf, the INPUT pin will fall to 0V.

This will not however affect the device
operation: no requirement is put on the current
capability of t he IN PUT pin dr ive r e xcep t t o b e
able to supply the normal operation drive
current I

ISS

.

Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.

5/29

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

Figure 1: Switching Time Test Circuit for Resistive Load

V

gen

I

D

90%

V

D

R

gen

t

r

t

V

gen

d(on) t

10%

Figure 2: Test Circuit for Diode Recovery Times

A

D

I

OMNIFET

S

150Ω

B

R

gen

FAST
DIODE

d(off)

I

t

f

A

B

OMNIFET

L=100uH

D

t

t

V

DD

6/29

1

V

gen

S

8.5 Ω

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

Figure 3: Unclamped Inductive Load Test Circuits

R

V

IN

P

GEN

W

Figur e 5: Input Charge Test Circuit

V

IN

Figure 4: Unclamped Inductive Waveforms

7/29

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

Source-Drain Diode Forward Characteristics

Vsd (mV)

1000

950

900

850

800

750

700

650

600

550
500

Vin=0V

0 2 4 6 8 101214

Id(A)

Derating Curve

Static Drain-Source On resistance Vs. Input
Voltage

Rds(on) (mOhm)

140

120

Tj=150ºC

100

80

Tj=25ºC

60

Tj=-40ºC

40

20

0

3 3.5 4 4.5 5 5.5 6 6.5

Vin(V)

Id=6A
Id=1A

Id=6A
Id=1A

Id=6A
Id=1A

Static Drain Source On Resistance

Rds(on) (mOhm)

500

450

400

350

300

250

200

150

100

50

0

0 0.25 0.5 0.75 1 1.25

Tj= - 40ºC

Vin=2.5V

Tj=25ºC

Tj=150ºC

Id(A)

Static Drain-Source On resistance Vs. Input
Voltage

Rds(on) (mOhm)

120
110
100

90
80
70
60
50
40
30
20
10

0

33.544.555.566.57

Id=3.5A

Tj=150ºC

Tj=25ºC

Tj= - 40ºC

Vin(V)

Transconductance

Gfs (S)

20

18

16

14

12

10

8

6

4

2
0

Vds=13V

Tj=-40ºC
Tj=25ºC

Tj=150ºC

012345678

Id(A)

8/29

1

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

Static Drain-Source On Resistance Vs. Id

Rds(on) (mOhm)

140

120

100

80

60

40

20

0

00.511.522.533.544.555.56

Tj=150ºC

Tj=25ºC

Tj=-40ºC

Vin=3.5V

Vin=5V

Vin=3.5V

Vin=5V
Vin=3.5V

Vin=5V

Id(A)

Turn On Current Slope

di/dt(A/us)

8

7

6

5

4

3

2

1

0

100

200

300

400

500

Rg(ohm)

600

Vin=5V

Vdd=15V

Id=3.5A

700

800

900

1000

1100

Transfer Characteristics

Idon(A)

10

9

8

7

6

5

4

3

2

0

Vds=13.5V

1

1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

Vin(V)

Turn On Current Slope

di/dt(A/us)

2.25

2

1.75

1.5

1.25

1

0.75

0.5

0.25
100 200 300 400 500 600 700 800 900 1000 1100

Rg(ohm)

Vin=3.5V
Vdd=15V

Id=3.5A

Tj=25ºC
Tj=-40ºC
Tj=150ºC

Input Voltage Vs. Input Charge

Vin(V)

8

7

6

5

4

3

2

1

0

0 5 10 15 20 25

Vds=12V

Id=3.5A

Qg(nC)

1

Turn off drain source voltage slope

dv/dt(V/us)

300

250

200

150

100

50

0

100 200 300 400 500 600 700 800 900 1000 1100

Rg(ohm)

Vin=5V

Vdd=15V

Id=3.5A

9/29

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

Turn Off Drain-Source Voltage Slope

dv/dt(v/us)

300

250

700

Vin=3.5V
Vdd=15V

Id=3.5A

800

900

200

150

100

50

0

100

200

300

400

500

600

Rg(ohm)

Switching Time Resistive Load

t(us)

5.5
5

4.5

3.5

2.5

1.5

0.5

Vdd=15V

Id=3.5A

Vin=5V

4

3

2

1

0

250

0

500

750

1000

1250

td(off)

td(on)

1500

1750

2000

Rg(ohm)

Output Characteristics

1000

2250

Capacitance Variations

C(pF)

600

1100

500

400

300

200

100

0 5 10 15 20 25 30 35

f=1MHz
Vin=0V

Vds(V)

Switching Time Resistive Load

t(ns)

1600

tr

tr

tf

2500

1400

1200

1000

800

600

400

200

0

3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25

td(off)

td(on)

Vdd=15V

Id=3.5A

Rg=150ohm

tf

Vin(V)

Normalized On Resistance Vs. Temperature

ID(A)

12

11

10

9
8
7
6
5
4
3
2

1

0

012345678910111213

VDS(V)

10/29

1

Vin=5V
Vin=4.5V
Vin=4V

Vin=3V

Vin=2.5V

Vin=2V

Rds(on)

2.25

2

1.75

1.5

1.25

1

0.75

0.5

Vin=5V

Id=3.5A

-50 -25 0 25 50 75 100 125 150 175

T(ºC)

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

Normalized Input Threshold Voltage Vs.
Temperature

Vin(th)

1.15

1.1

1.05

1

0.95

0.9

0.85

0.8

0.75

0.7

-50 -25 0 25 50 75 100 125 150 175

T(ºC)

Vds=Vin

Id=1mA

Step Response Current Limit

Tdlim(us)

7

6.5

6

Vin=5V

Rg=150ohm

Current Limit Vs. Junction Temperature

Ilim (A)

15

14

13

12

11

10

9

8

7

6
5

Vds=13V

Vin=5V

-50 -25 0 25 50 75 100 125 150 175

Tj (ºC)

5.5

5

4.5

4

3.5

5 101520253035

Vdd(V)

11/29

1

11

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

SO-8 Maximum turn off current versus load inductance

LMAX (A)

I

100

10

A

B

C

1

0.01 0.1 1 10 100

A = Single Pulse at T

B= Repetitive pulse at T
C= Repetitive Pulse at T

Conditions:
VCC=13.5V

Values are generated with RL=0Ω
In case of repetitive pulses, T

the temperature specified above for curves B and C.

VIN, I

L

=150ºC

Jstart

=100ºC

Jstart

=125ºC

Jstart

jstart

Demagnetization

(at beginning of each demagnetization) of every pulse must not exceed

L(mH)

Demagnetization

Demagnetization

12/29

t

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

DPAK Maximum turn off current versus load inductance

LMAX (A)

I

100

10

A

B

C

1

0.01 0.1 1 10 100

A = Single Pulse at T

B= Repetitive pulse at T
C= Repetitive Pulse at T

Conditions:
VCC=13.5V

Values are generated with RL=0Ω
In case of repetitive pulses, T

the temperature specified above for curves B and C.

VIN, I

L

=150ºC

Jstart

=100ºC

Jstart

=125ºC

Jstart

jstart

Demagnetization

(at beginning of each demagnetization) of every pulse must not exceed

L(mH)

Demagnetization

Demagnetization

t

13/29

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

SOT-223 Maximum turn off current versus load inductance

LMAX (A)

I

100

10

A

B

C

1

0.01 0.1 1 10

A = Single Pulse at T

B= Repetitive pulse at T
C= Repetitive Pulse at T

Conditions:
VCC=13.5V

Values are generated with RL=0Ω
In case of repetitive pulses, T

the temperature specified above for curves B and C.

VIN, I

L

=150ºC

Jstart

=100ºC

Jstart

=125ºC

Jstart

jstart

Demagnetization

(at beginning of each demagnetization) of every pulse must not exceed

L(mH)

Demagnetization

Demagnetization

14/29

t

SO-8 PC Board

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

SO-8 THERMAL DATA

R

thj-amb

Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 5 8m m , PCB thickness=2mm,
Cu thickness=35µm, Copper areas: 0.14cm

Vs PCB copper area in open box free air condition

2

, 0.6cm2, 1.6cm2).

SO-8 at 4 pins connected to TAB

RTHj_amb

(ºC/W)

110
105
100

95
90
85
80
75
70

00.511.522.5

PCB CU heatsink are a (cm^2)

15/29

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

SOT-223 THERMAL DATA

SOT-223 PC Board

R

thj-amb

Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 5 8m m , PCB thickness=2mm,
Cu thickness=35µm, Copper areas: 0.11cm

2

, 1cm2, 2cm2).

Vs PCB copper area in open box free air condition

RTH j-amb (°C/W)

140
130
120
110
100

90
80

16/29

70
60

00.511.522.5

Cu area (cm^2)

DPAK PC Board

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

DPAK THERMAL DATA

Layout condition of Rth and Zth measur em ents (PCB FR 4 area= 60mm x 60mm, PCB thickness=2mm,
Cu thickness=35µm, Copper areas: from mi nimum pad lay-out to 8c m

R

Vs PCB copper area in open box free air condition

thj-amb

RTH j_amb (ºC/W)

90

80

70

60

50

40

2

).

30

0246810

PCB CU heatsink area (cm^2)

17/29

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

DPAK Thermal Impedance Junction Ambient Single Pulse

ZTH (°C/W)

1000

100

10

1

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)

Thermal fitting model of an OMNIFET II in
DPAK

Tj

C1

R1 R2

Pd

C2

C3

R3

T_amb

C4

R4

C5

R5

C6

R6

Pulse calculation formula

Z

THδ

where

RTHδ Z

δ tpT⁄=

THtp

Thermal Paramet er

Area/island (cm2) Footpri nt 6

R1 (°C/W) 0.1
R2 (°C/W) 0.35
R3 ( °C/W) 1.20
R4 (°C/W) 2
R5 (°C/W) 15
R6 (°C/W) 61 24
C1 (W.s/°C) 0.0006
C2 (W.s/°C) 0.0021
C3 (W.s/°C) 0.05
C4 (W.s/°C) 0.3
C5 (W.s/°C) 0.45
C6 (W.s/°C) 0.8 5

Footprint

2

6 cm

1 δ–()+⋅=

18/29

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

SO-8 Thermal Impedance Junction Ambient Single Pulse

ZTH (°C/W)

1000

100

10

1

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

Time (s)

Thermal fitting model of an OMNIFET II in SO-8

Tj

C1

R1 R2

Pd

C2

C3

R3

T_amb

C4

R4

C5

R5

C6

R6

Pulse calculation formula

Z

THδ

where

RTHδ Z

δ tpT⁄=

THtp

Thermal Paramet er

Area/island (cm2) Footpri nt 2

R1 (°C/W) 0.2
R2 (°C/W) 0.9
R3 ( °C/W) 3.5
R4 (°C/W) 21
R5 (°C/W) 16
R6 (°C/W) 58 28
C1 (W.s/°C) 3.00E-04
C2 (W.s/°C) 9.00E-04
C3 (W.s/°C) 7.50E-03
C4 (W.s/°C) 0.045
C5 (W.s/°C) 0.35
C6 (W.s/°C) 1.05 2

Footprint

2

2 cm

1 δ–()+⋅=

19/29

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

SOT-223 Thermal Impedance Junction Ambient Single Pulse

ZTH (°C/W)

1000

100

10

1

0.1

Footprint

2

2 cm

0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)

Thermal fitting model of an OMNIFET II in
SOT-223

Tj

C1

R1 R2

Pd

C2

C3

R3

T_amb

C4

R4

C5

R5

C6

R6

Pulse calculation formula

Z

THδ

where

RTHδ Z

δ tpT⁄=

THtp

Thermal Paramet er

Area/island (cm2) Footpri nt 2

R1 (°C/W) 0.2
R2 (°C/W) 1.1
R3 ( °C/W) 4.5
R4 (°C/W) 24
R5 (°C/W) 0.1
R6 (°C/W) 100 45
C1 (W.s/°C) 3.00E-04
C2 (W.s/°C) 9.00E-04
C3 (W.s/°C) 3.00E-02
C4 (W.s/°C) 0.16
C5 (W.s/°C) 1000
C6 (W.s/°C) 0.5 2

1 δ–()+⋅=

20/29

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

TO-251 (IPAK) MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

A

E

= =

C2

L2

B2

= =

C

A3

A1

B6

L

B

B5

G

= =

D

B3

2

1 3

L1

21/29

1

1

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

TO-252 (DPAK) MECHANICAL DATA

DIM.

mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094

A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035

B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023

C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

R 0.2 0.008

V2 0° 8° 0° 8°

22/29

D

R

A

C2

A1

L2

B

=

E

B2

===

L4

H

C

V2

A2

==

==

G

0.60 MIN.

FLAT ZONE

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

SOT-223 MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 1.8 0.071

B 0.6 0.7 0.85 0.024 0.027 0.033

B1 2.9 3 3.15 0.114 0.118 0.124

c 0.24 0.26 0.35 0.009 0.01 0.014

D 6.3 6.5 6.7 0.248 0.256 0.264

e2.3 0.09

e1 4.6 0.181

E 3.3 3.5 3.7 0.13 0.138 0.146

H 6.7 7 7.3 0.264 0.276 0.287

V10 (max)

A1 0.02 0.1 0.0008 0.004

mm. inch

0046067

23/29

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

SO-8 MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 1.75 0.068

a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033

b 0.35 0.48 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.019

c1 45 (typ.)

D 4.8 5.0 0.188 0.196

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 3.81 0.150

F 3.8 4.0 0.14 0.157

L 0.4 1.27 0.015 0.050

M 0.6 0.023

F 8 (max.)

mm. inch

24/29

1

SOT-223 TAPE AND REEL SHIPMENT (suffix “13TR”)

TAPE DIMENSIONS

According to Electr onic Industries Association
(EIA) Sta ndard 481 rev. A, Feb. 1986

Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

REEL DIMENS I O N S

Base Q.ty 1000
Bulk Q.ty 1000
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4

All dimensions are i n mm.

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

25/29

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

SO-8 TUBE SHIPMENT (no suffix)

B

C

Base Q.ty 100
Bulk Q.ty 2000
Tube length (± 0.5) 532

A

A 3.2
B 6
C (± 0.1) 0.6

All dimensions are i n mm.

TAPE AND REEL SHIPMENT (suffix “13TR”)

REEL DIMENSIONS

Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 12.4
N (min) 60
T (max) 18.4

All dimensions are in mm.

TAPE DIMENSIONS

According to Electr onic Industries Association
(EIA) S tanda rd 481 rev. A, Feb 1986

Tape width W 12
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 5.5
Compartment Depth K (max) 4.5
Hole Spacing P1 (± 0.1) 2

All dimensions are i n mm.

26/29

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

DPAK FOOTPRINT TUBE SHIPMENT (no suffix)

6.7

6.7 3.01.8 1.6

2.3

2.3

TAPE AND REEL SHIPMENT (suffix “13TR”)

A

Base Q.ty 75

C

Bulk Q.ty 3000
Tube length (± 0. 5) 532

A 6

B

B 21.3
C (± 0.1) 0.6

All dimensions are in mm.

REEL DIMENSIONS

Base Q.ty 2500
Bulk Q.ty 2500
A (max) 330
B (min) 1.5
C (± 0.2) 13

F 20.2
G (+ 2 / -0) 16.4
N (min) 60
T (max) 22.4

TAPE DIMENSIONS

According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986

Tape width W 16
Tape Hole Spacing P0 (± 0.1) 4
Component Spacing P 8
Hole Diameter D (± 0.1/-0) 1.5
Hole Diameter D1 (min) 1.5
Hole Position F (± 0.05) 7.5
Compartm ent Depth K (max) 6.5
Hole Spacing P1 (± 0.1) 2

All dimensions are in mm.

Top

cover

tape

End

500mm min

Empty components pockets
saled with cover tape.

User direction of feed

Start

No componentsNo components Components

500mm min

27/29

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

IPAK TUBE SHIP MENT (no suffix)

A

C

Base Q.ty 75
Bulk Q.ty 3000
Tube length (± 0.5) 532

B

A 6
B 21.3
C (± 0.1) 0.6

All dimensions are in mm.

28/29

1

VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1

Information furnish ed is believed to be accurate and r eliable. However, STMicroel ec tronics ass um es no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise unde r any patent or patent rights of STMicroelect r onics. Specifications mentioned in this publication are
subject to c hange without notice. T his publication supersedes and replac es all information pr ev iously supplied. STMicroelectr on ics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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