Datasheet VND600SP Datasheet (SGS Thomson Microelectronics)



VND600SP

DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY

TARGET SPECIFICATION

TYPE R

DS(on)

VND600SP 30mΩ 25A 36 V

■ DC SHORT CIRCUIT CURRENT: 25 A

■ CMOS COMPATIBLE INPUTS

■ PROPORTIONAL LOAD CURRENT SENSE

■ UNDERVOLTAGE AND OVERVOLTAGEn

SHUT-DOWN

■ OVERVOLTAGE CLAMP

■ THERMAL SHUT DOWN

■ CURRENT LIMITATION

■ VERY LOW STAND-BY POWER DISSIPATION

■ PROTECTION AGAINST:

n LOSS OF GROUND ANDLOSS OF V

■ REVERSE BATTERY PROTECTION (*)

DESCRIPTION

The VND600SP is a monolithic device made
using STMicroelectronics VIPower technology. It
is intended for driving resistive or inductive loads
with one side connectedtoground.ActiveV
voltage clamp protects the device against low
energy spikes (see ISO7637 transient

BLOCK DIAGRAM

I

lim

V

CC

10

1

PowerSO-10

CC

compatibility table). This device has two channels
in high side configuration; each channel has an
analog sense output on which the sensing current
is proportional (according to a known ratio) to the
corresponding load current. Built-in thermal shut­down and outputs current limitation protect the
chip from over temperature and short circuit.
Device turns off in case of ground pin

CC

pin

disconnection.

V

CC

OVERVOLTAGE

VCCCLAMP

INPUT 1

INPUT 2

GND

OVERTEMP.1

OVERTEMP. 2

(*) See application schematic at page7

LOGIC

Ot1

Ot2

UNDERVOLTAGE

DRIVER 1

I

OUT1

DRIVER2

I

OUT2

PwCLAMP 1

I

LIM1

V

dslim1

K

PwCLAMP 2

I

LIM2

V

dslim2

K

OUTPUT 1

Ot1

CURRENT
SENSE 1

OUTPUT 2

Ot2

CURRENT
SENSE 2

September 1999 1/10

1

VND600SP

ABSOLUTE MAXIMUM RATING

Symbol Parameter Value Unit

V

-V

-I

GND

I

OUT

I

I

V

CSENSE

V

ESD

P

TOT

T

T

T

STG

CONNECTION DIAGRAM (TOP VIEW)

DC supply voltage 41 V

CC

Reverse supply voltage -0.3 V

CC

DC reverse ground pin current -200 mA
Output current Internally limited A
Reverse output current -21 A

R

Input current +/- 10 mA

IN

Current sense maximum voltage

-3

+15
Electrostatic discharge (R=1.5kΩ; C=100pF) 2000 V
Power dissipation at Tc=25°C90W
Junction operating temperature Internally limited °C

j

Case operating temperature -40 to 150 °C

c

Storage temperature -55 to 150 °C

V
V

GROUND
INPUT 2
INPUT 1
C.SENSE1
C.SENSE2

10

V

CC

CURRENT ANDVOLTAGE CONVENTIONS

I

IN1

V

IN1

I

IN2

V

IN2

INPUT1

CURRENT SENSE 1

INPUT2

CURRENT SENSE 2

6
7

8
9

11

GROUND

V

CC

OUTPUT1

OUTPUT2

5
4
3

2
1

I

OUT1

I

SENSE1

I

OUT2

I

SENSE2

V

SENSE2

V

V

OUT2

I

CC

SENSE1

OUTPUT 2
OUTPUT 2
N.C.
OUTPUT 1
OUTPUT 1

V

OUT1

V

CC

2/10

1

I

GND

VND600SP

THERMAL DATA

Symbol Parameter Value Unit

R
R

Note: (1) one channel ON

ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C<Tj<150°C;unless otherwise specified)

(Per each channel)
POWER

(1) Thermal resistance junction-case (MAX) 1.75 °C/W

thj-case

(2) Thermal resistance junction-case (MAX) 1.2 °C/W

thj-case

R

thj-amb

(2) twochannels ON

Thermal resistance junction-ambient (MAX) 50 °C/W

Symbol Parameter Test Conditions Min Typ Max Unit

V

V

V

R

V

I

CC

USD

OV

ON

clamp

I

S

L(off)

Operating supply
voltage

5.5 13 36 V

Undervoltage shutdown 3 4 5.5 V
Overvoltage shutdown 36 42 48 V

I

OUT

On state resistance

Clamp voltage

I

OUT

I

OUT

=20 mA

I

CC

(see note 1)
Off state; Input n.c.; V

Supply current

On state; V
R

SENSE

Off state output current VIN=V

=5A; Tj=25°C
=5A; Tj=150°C
=3A; VCC=6V

41 48 55 V

=13V

CC

=5V; VCC=13V;I

IN

=3.9kΩ

=0V 0 50 µA

OUT

OUT

=0A;

30
60

100

40

6

mΩ
mΩ
mΩ

µA

mA

SWITCHING (VCC=13V)

Symbol Parameter Test Conditions Min Typ Max Unit

(dV
(dV

t

d(on)

t

d(off)
OUT
OUT

Turn-on delay time R1=2.6Ω 30 µs

Turn-on delay time R1=2.6Ω 30 µs
/dt)onTurn-on voltage slope R1=2.6Ω 0.20 V/µs
/dt)

Turn-off voltage slope R1=2.6Ω 0.20 V/µs

off

PROTECTIONS

Symbol Parameter Test Conditions Min Typ Max Unit

T

T

HYST

V

demag

V

I

lim

TSD

T

ON

=13V

V

DC short circuit current

CC

5.5V<VCC<36V

Thermal shut-down

temperature

Thermal reset

R

temperature

Thermal hysteresis 7 15 °C

=2A; VIN=0V; L=6mH

Turn-off output voltage

I

OUT

clamp

Output voltage drop

limitation

I

=0.5A

OUT

Tj= -40°C...+150°C

25 40 70

70

150 175 200 °C

135 °C

Vcc-41 Vcc-48 Vcc-55 V

50 mV

A
A

3/10

1

VND600SP

CURRENT SENSE (9V≤V

≤16V) (See fig. 1)

CC

Symbol Parameter Test Conditions Min Typ Max Unit

K

K

K

V

SENSE1,2

V

SENSEH

I

1

OUT/ISENSE

I

2

OUT/ISENSE

I

3

OUT/ISENSE

Max analog sense
output voltage
Analog sense output

voltage in overtemperature
condition

or I

OUT1

other channels open; Tj= -40°C...150°C
I

or I

OUT1

channels open; Tj=-40°C
Tj=25°C...150°C

I

or I

OUT1

channels open; Tj=-40°C
Tj=25°C...150°C

VCC=5.5V; I
VCC>8V, I

V

=13V; R

CC

OUT2

OUT2

OUT2

OUT1,2

OUT1,2

SENSE

=0.5A; V

=5A; V

=15A; V

=2.5A; R

=5A; R

=3.9kΩ

SENSE

SENSE

SENSE

SENSE

=0.5V;

=4V; other

=4V; other

=10kΩ

SENSE

=10kΩ

3300 4400 6000
4200

4400
4200

4400

4900

4900
4900

4900

6000

5750
5500

5250
2
4

5.5 V

I

LOGIC INPUT (Channels 1,2)

Symbol Parameter Test Conditions Min Typ Max Unit

V

I

V

I

V

I(hyst)

V

Note 1: V

Input low level voltage 1.25 V

IL

Low level input current VIN=1.25V 1 µA

IL

Input high level voltage 3.25 V

IH

High level input current VIN=3.25V 10 µA

IH

Input hysteresis voltage 0.5 V
Input clamp voltage

ICL

and VOVare correlated. Typical difference is 5V.

clamp

I

IN

I

IN

=1mA
=-1mA

6.5 7.4

-0.7

8.5 V

TRUTH TABLE (per channel)

V
V

V

CONDITIONS INPUT OUTPUT SENSE

Normal operation

Overtemperature

Undervoltage

Overvoltage

Short circuit to GND

Short circuit to V

CC

Negative output voltage
clamp

4/10

L

H

L

H

L

H

L

H

L

H

L

H

L

H

L
L
L
L
L
L
L
L

H
H

0

Nominal

0

V

SENSEH

0
0

0
0
0
0
0

< Nominal

LL 0

2

ELECTRICAL TRANSIENT REQUIREMENTS

VND600SP

ISO T/R 7637/1

Test Pulse

I II III IV Delays and

1 -25 V -50 V -75 V -100 V 2 ms 10 Ω

2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω
3a -25 V -50 V -100 V -150 V 0.1 µs50Ω
3b +25 V +50 V +75 V +100 V 0.1 µs50Ω

4 -4 V -5 V -6 V -7 V 100 ms, 0.01 Ω

5 +26.5 V +46.5V +66.5 V +86.5 V 400 ms, 2 Ω

ISO T/R 7637/1

Test Pulse

I II III IV

TEST LEVELS RESULTS

1CCCC

2CCCC
3aCCCC
3bCCCC

4CCCC

5C E E E

CLASS CONTENTS

C All functions of the device are performed as designed after exposure to disturbance.
E

One or more functions of the device is not performed as designed after exposure to disturbance
and cannot be returned to proper operation without replacing the device.

SWITCHING CHARACTERISTICS

TEST LEVELS

Impedance

V

OUT

dV

OUT

INPUT

/dt

(on)

t

d(on)

70%

t

90%

dV

/dt

OUT

(off)

r

10%

t

d(off)

t

f

t

t

5/10

VND600SP

Figure1: Waveforms

INPUT

n

LOAD CURRENT
SENSE

n

V

CC

INPUT

n

LOAD CURRENT

SENSE

n

V

CC

INPUT

n

LOAD CURRENT
SENSE

n

NORMAL OPERATION

n

UNDERVOLTAGE

V

USDhyst

V

USD

n

OVERVOLTAGE

V

OV

VCC<V

OV

n

VCC>V

OV

INPUT

n

LOAD CURRENT
LOAD VOLTAGE
SENSE

n

INPUT

n

LOAD VOLTAGE
LOAD CURRENT

SENSE

n

T

j

INPUT

n

LOAD CURRENT
SENSE

n

SHORT TO GROUND

n

n

SHORT TO V

n

n

<Nominal

T

TSD

T

R

n

OVERTEMPERATURE

CC

<Nominal

I

SENSE

=

V

SENSEH

R

SENSE

6/10

APPLICATION SCHEMATIC

+5V

R

prot

R

µC

prot

R

prot

INPUT1

CURRENTSENSE1

INPUT2

VND600SP

V

CC

D

ld

OUTPUT1

R

SENSE1

R

prot

CURRENTSENSE2

R

SENSE2

GND PROTECTION NETWORK AGAINST
REVERSE BATTERY

Solution 1: Resistor in the ground line (R
can be used withany type of load.

The following is an indication on how to dimension the

resistor.

R

GND

1) R

2) R

where -I
be found in the absolute max imum r ating s ection of the

≤ 600mV / I

GND

≥ (−VCC) / (-I

GND

is the DC reverse groundpin current and can

GND

S(on)max

)

GND

.

device’s datasheet.
Power Dissipation in R

battery situations) is:

= (-VCC)2/R

P

D

GND

(when VCC<0: during reverse

GND

This r esistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) wher e I
sum of the maximum on-state c urrents of t he different

S(on)max

devices.
Please note that if the m icroprocessor ground i s not

common with the device ground then the R

*R

produce a shift (I
and the status output values. This shift will vary

S(on)max

) in the input thresholds

GND

depending o n how many devices are ON in the case o f
several high side drivers sharing the same R

only). This

GND

becomes the

GND

.

GND

will

GND

R

V

GND

GND

D

OUTPUT2

GND

If thecalculated power dissipation leadsto a large resistor
or several devices have to share the same resistor then
the ST sug gests to utilize Solution 2 (see below).

Solution 2: A diode (D
A resistor ( R

if the device will be drivingan inductive load.

D

GND

=1kΩ) s hould be inserted in para llel to

GND

) in the ground line.

GND

This small signal di ode can be safely shared amongst
several different HSDs. Also in this case, the presence of
the grou nd network will pro duce a shift ( j 600mV) in the
input thresholds and t he s tatus output values if the
microprocessor ground is not common with the de vice
ground. This shift will not vary if more than o ne HSD
shares the same diode/resistor network.

LOAD DUMP PROT ECTION

Dldis necessary (Transil or MOV) if the load dump peak
voltage exceeds V
the devicewill be subject totransients on the V
are greater th an the ones sho wn in the ISO T/R 7637/1
table.

max DC rating. The same applies if

CC

µC I/Os PROTECTION:

If a ground protection netwo rk is used and ne gative
transient are present on the V
be pulled negative. ST suggests toinsert a resistor (R
in line to prevent the µC I/Os pins to latch-up.

The value of these resistors is acompromise between the
leakage current of µC and the current required by the

line, t he control pins w ill

CC

CC

linethat

prot

)

7/10

11

VND600SP

HSD I/Os(Input levels compatibility)withthe latch-uplimit
ofµC I/Os.

≤ R

-V

CCpeak/Ilatchup

Fig 1: I

I

OUT/ISENSE

OUT/ISENSE

prot

versus I

≤ (V

OUT

OHµC-VIH

-V

GND

)/I

IHmax

6500
6000
5500

max.Tj=25...150°C

5000
4500

min.Tj=25...150°C

4000
3500

Calculation example:

CCpeak

prot

= - 100V and I
≤ 65kΩ.

prot

For V
5kΩ ≤ R

Recommended R

≥ 20mA; V

latchup

value is 10kΩ.

max.Tj=-40°C

typical value

min.Tj=-40°C

OHµC

≥ 4.5V

3000

0246810121416

I

(A)

OUT

8/10

1

PowerSO-10 MECHANICAL DATA

VND600SP

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

A 3.35 3.65 0.132 0.144

A1 0.00 0.10 0.000 0.004

B 0.40 0.60 0.016 0.024

c 0.35 0.55 0.013 0.022

D 9.40 9.60 0.370 0.378

D1 7.40 7.60 0.291 0.300

E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240

e 1.27 0.050

F 1.25 1.35 0.049 0.053

H 13.80 14.40 0.543 0.567

h 0.50 0.002

Q 1.70 0.067

α 0º 8º

B

==

==

HE

h

A

F

A1

610

51

eB

M

0.25

D

==

D1

==

DETAIL”A”

E2

==

DETAIL”A”

Q

0.10 A

E1E3

==

SEATING

PLANE

A

C

α

B

E4

==

SEATING

PLANE

A1

L

==

9/10

1

VND600SP

Information furnished is believed to be accurate and reliable. However,STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approvalof STMicroelectronics.

Australia - Brazil - Canada- China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -

The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan- Thailand - United Kingdom - U.S.A.

The ST logo is a registered trademarkof STMicroelectronics

 1999 STMicroelectronics - Printed in ITALY- All Rights Reserved.

STMicroelectronics GROUPOF COMPANIES

http://www.st.com

10/10

1