Datasheet TEA5591 Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA5591

AM/FM radio receiver circuit

Product specification
File under Integrated Circuits, IC01

June 1989

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

GENERAL DESCRIPTION

The TEA5591 is an integrated radio circuit which is designed for use in portable receivers and clock radios. The IC is
also applicable to mains-fed AM an AM/FM receivers and car radio-receivers. The main advantage of this IC is its ability
to operate over a wide range of supply voltages without loss of performance. The AM circuit incorporates a balanced
mixer and a ‘one-pin’ oscillator, which operates in the 0.6 MHz to 30 MHz frequency range, with amplitude control. The
circuit also includes an IF amplifier, a detector and an AGC circuit which controls the IF amplifier and the mixer. The FM
circuit incorporates an RF amplifier, a balanced mixer and a ‘one-pin’ oscillator together with two AC coupled IF amplifiers
(with distributed selectivity), a quadrature demodulator for the ceramic filter and internal AFC.

Features

• DC AM/FM switch facility

• Three internal separate stabilizers to enable operation over a wide range of supply voltages (1.8 to 15 V)

• All pins (except pin 9) are ESD protected.

QUICK REFERENCE DATA

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT

Supply voltage (pin 8) V

P

Supply current

AM part I
FM part I

Operating ambient temperature range T
AM performance (pin 13)

m = 0.3

(AM) − 14 19 mA

P

(FM) − 17 23 mA

P

amb

RF sensitivity
RF input voltage V
RF input voltage (S+N)/N = 26 dB V
Signal plus noise-to-noise ratio V
AF output voltage V

= 10 mV V

o

= 1 mV (S+N)/N − 48 − dB

i

i
i

o

Total harmonic distortion THD − 0.7 − %
FM performance (pin 1)

∆f = 22.5 kHz

RF sensitivity
RF input voltage

−3 dB before limiting V

i

Signal plus noise-to-noise ratio for:
RF input signal voltage (V

)V

i

AF output voltage V

= 3.0 µV(S+N)/N 23 26 − dB

i

= 1 mV (S+N)/N − 60 − dB

V

i

= 100 µVV

i

o

Total harmonic distortion THD − 0.8 − %

1.8 3.0 15 V

−15 −+60 °C

− 3.5 −µV

− 17 −µV

− 50 − mV

− 2.3 4.0 µV

75 90 − mV

PACKAGE OUTLINE

20-lead DIL; plastic (SOT146); SOT146-1; 1996 August 14.

June 1989 2

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

June 1989 3

Fig.1 Block diagram.

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

June 1989 4

Fig.2 Equivalent circuit diagram.

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

PINNING

Fig.3 Pinning diagram.

June 1989 5

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT

Supply voltage (pin 8) V
Storage temperature range T
Operating ambient temperature range T
Total power dissipation P

P
stg
amb
tot

− 18 V

−65 + 150 °C

−15 + 60 °C

see Fig.4

Fig.4 Power derating curve.

June 1989 6

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

DC CHARACTERISTICS

All voltages are referenced to pin 3; all input currents are positive; all parameters are measured in Fig.5 at nominal
supply voltage V

= 3 V; T

P

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT

Supply voltage V

Voltages (FM)

pin 1 V
pin 2 V
pin 4 V
pin 5 V
pin 6 V
pin 9 V
pin 14 V
pin 17 V
pin 19 V

Voltages (AM)

pin 2 V
pin 12 V
pin 15 V

Supply current

AM part I
FM part I

= 25 °C unless otherwise specified

amb

P

1
2
4
5
6
9
14
17
19

2
12
15

P(AM)
P(FM)

1.8 3.0 15 V

− 0.90 − V

− 1.60 − V

− 0.85 − V

1.5 1.60 1.75 V

− 1.48 − V

− 1.05 − V

− 1.63 − V

− 0.60 − V

− 1.60 − V

− 1.10 − V

− 1.60 − V

− 1.54 − V

− 14 19 mA

− 17 23 mA

June 1989 7

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

AC CHARACTERISTICS

= 3 V; T

V

P

AM PART

Input conductance pin 4 f = 0.5 MHz g
Input capacitance pin 4 f = 0.5 MHz C

= 25 °C unless otherwise specified

amb

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT

ie

ie

− 1.7 − ms

− 5 − pF

Input conductance pin 13 f = 1.0 MHz g
Input capacitance pin 13 f = 1.0 MHz C

Output conductance pin 7 f = 0.5 MHz g
Output capacitance pin 7 f = 0.5 MHz C

Conductance pin 11 f = 1.5 MHz g
Capacitance pin 11 f = 1.5 MHz C

FM PART

Input conductance pin 4 f = 10.7 MHz g
Input capacitance pin 4 f = 10.7 MHz C

Input conductance pin 14 f = 10.7 MHz g
Input capacitance pin 14 f = 10.7 MHz C

Output conductance pin 6 f = 10.7 MHz g
Output capacitance pin 6 f = 10.7 MHz C

Output conductance pin 16 f = 10.7 MHz g
Output capacitance pin 16 f = 10.7 MHz C

ie

ie

oe

oe

e

e

ie

ie

ie

ie

oe

oe

oe

oe

− 230 −µs

− 13 − pF

− 4 −µs

− 4.7 − pF

−−6.8 − ms

− 25 − pF

− 2.7 − ms

− 6 − pF

− 2.8 − ms

− 2.5 − pF

− 2.8 − ms

− 3.0 − pF

− 1.6 −µs

− 4.5 − pF

Conductance pin 9 f = 10.7 MHz g
Capacitance pin 9 f = 10.7 MHz C

Conductance pin 18 f = 100 MHz g
Capacitance pin 18 f = 100 MHz C

e

e

e

e

June 1989 8

− 880 −µs

− 3.6 − pF

−−4−ms

− 10 − pF

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

AC CHARACTERISTICS

All parameters are measured in Fig.5 at nominal supply voltage V
RF conditions: Input frequency 1 MHz; 30% modulation where f

= 3 V; T

P

= 1 kHz; unless otherwise specified

mod

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
AM PERFORMANCE
RF sensitivity

AF output voltage for:

= 7.5 µV no AGC V

V

i

o

Noise

Signal plus noise-to-noise
ratio for:
RF input signal voltage of

= 17 µV(S+N)/N 23 26 − dB

V

i

= 1 mV (S + N)/N − 48 − dB

V

i

Optimum source impedance Z

S

Noise factor optimum noise impedance NF − 4 − dB

= 25 °C unless otherwise specified.

amb

16 30 40 mV

− 1.8 − kΩ

AGC

Change in RF input voltage
for 10 dB change in output
voltage V

AF output voltage
Total harmonic distortion

= 100 mV Vi1/V

i1

= 100 µVV

V

i

V

= 100 µV to 10 mV THD − 0.7 1.5 %

i

V

= 100 µV to 10 mV;

i

i2

o

80 86 − dB
40 50 60 mV

m = 0.8 THD − 35%

= 80 mV; m = 0.8 THD −−8%

V

i

June 1989 9

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
IF suppression

(note 1) V
Oscillator (pin 11)
Input voltage f

Temperature behaviour

Sensitivity ∆V
Output voltage V
Oscillator frequency

LW ∆f
MW ∆f
SW ∆f

Supply voltage behaviour

Sensitivity ∆V
Output voltage V
Oscillator frequency

LW ∆f
MW ∆f
SW ∆f

Transimpedance (Ztr) = V4/i7= 900Ω.

= 30 mV α−20 − dB

o

= 1.5 MHz V

osc

= 30.5 MHz V

f

osc

= 1.5 V V

V

P

osc
osc
osc

− 150 190 mV

− 150 − mV
100 −−mV

−15 to + 60 °C

(only the IC)

−−2−dB

− 1 − dB

− 500 − Hz

− 300 − Hz

− 100 − kHz

− 0 − dB

− 0.5 − dB

− 6 − kHz

− 0.1 − kHz

− 30 − kHz

= 1 mV ∆V

i

V

= 1.8 to 15 V

P

= 1 mV ∆V

i

i
o

osc
osc
osc

i
o

osc
osc
osc

June 1989 10

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

AC CHARACTERISTICS

All parameters are measured in Fig.5 at nominal supply voltage V

= 3 V; T

P

RF conditions: Input frequency 100 MHz; frequency deviation f = ± 22,5 kHz and f

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
FM PERFORMANCE
RF sensitivity

RF input voltage −3 dB before

limiting V

iFM

Noise

Signal plus noise-to-noise

ratio for:

RF input signal voltage (V

V

= 3.0 µV(S+N)/N 23 26 − dB

i

= 1 mV (S + N)/N − 60 − dB

V

i

Optimum source impedance Z

)

i

source

Noise factor optimum noise

impedance NF − 6 − dB

AF output voltage

i

o

= 100 µVV

V

Total harmonic

distortion V

= 30 µV

i

to 50 mV THD − 0.8 − %

= 1 mV;

V

i

∆f = 75 kHz THD − 3 − %

= 100 mV;

V

i

∆f = 75 kHz THD − 3 − %

AM suppression

RF input signal V

note 2

= 100 µV to

i

10 mV AMS − 50 − dB

Oscillator voltage (pin 18) f

IF rejection ratio IF

AFC

= 100 MHz V

osc

= 1.5 V V

V

P

= 111.2 MHz

f

osc

V

= 1.4 V ∆f −−620 − kHz

17

= 0.2 V ∆f −+420 − kHz

V

17

osc
osc

rr

= 25 °C unless otherwise specified

amb

= 1 kHz

mod

− 2.3 4.0 µV

− 50 −Ω

75 90 − mV

− 220 − mV
100 −−mV

− 60 − dB

June 1989 11

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Temperature behaviour

RF sensitivity −3 dB limiting ∆V
Output voltage V
Oscillator frequency ∆f

−15 to + 60 °C
(only the IC)

= 100 µV ∆V

i

osc

i
o

−−6−dB

−−2−dB

−−0.3 − %

Supply voltage behaviour

VP = 1.8 to 15 V

RF sensitivity −3 dB limiting ∆V
Output voltage V

= 100 µV ∆V

i

Oscillator frequency ∆f
Oscillator voltage ∆V

Notes to the AC characteristics

at fi455 kHz=

V

1. .

i

α

=

---------------------------------------------­V

at fi1MHz=

i

2. AM suppression is measured at:
f

= 400 Hz, m = 0.3 for AM;

mod

f

= 1 kHz, ∆f = 75 kHz for FM.

mod

osc

i
o

osc

− 6 − dB

− 0.5 − dB

− 100 − kHz

− 1.0 − dB

June 1989 12

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

June 1989 13

Fig.5 Test circuit.

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

APPLICATION INFORMATION

June 1989 14

Fig.6 Application diagram.

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

Component data

N1 = 4.5
L = 0.12 µH
Wire = 0.8 mm diameter
diameter = 4.5 mm

Fig.7 FM BFP coil (L1).

N1 = 132
N2 = 14
N3 = 9
C = 180 pF (internal)
Lprim = 660 µH
fo = 468 kHz
Wire = 0.07 mm diameter
Coil type 7P-TOKO
Material 7MCS

N1 = 86
N2 = 11
Lprim = 270 µH
Wire = 0.07 mm diameter
Coil type 7P-TOKO
Material 7BRS

Fig.8 AM IF coil (L2). TOKO sample no. 7MCS-7P.

Fig.9 Oscillator coil (L3). TOKO sample no. 7BRS-7P.

June 1989 15

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

N1 = 11
N2 = 2
C = 85 pF (internal)
f

= 10.7 MHz

o

Fig.10 FM IF coil (L5). TOKO equivalent no. 119ACS-30120M.

N1 = 1.5
L = 0.03 µH

Fig.11 Oscillator coil (L6). TOKO equivalent no. 301 SN-0100.

N1 = 2.5
L = 0.05 µH

Fig.12 FM RF coil (L7). TOKO equivalent no. 301 SN-0200.

June 1989 16

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

FERROCEPTOR COIL
L4: N1 = 105; N2 = 10; L = 625 µH

ERAMIC FILTERS

C
AM IF (K1). SFZ468 HL.
FM IF (K2). SFE10 . 7 MS2.
FM detector (K3). CDA10 . 7 MC1.

UNING CAPACITORS

T
AM 140/82 pF
FM 2 × 20 pF

June 1989 17

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

Physical dimensions of the printed circuit board = 5.0 × 8.1 cm.

Fig.13 Printed-circuit board component side, showing component layout. For circuit diagram see Fig.6.

Fig.14 Printed-circuit board showing track side.

June 1989 18

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

Fig.15 AM signal levels.

June 1989 19

Fig.16 FM signal levels.

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

Fig.17 Signal and noise (V

as a function of input voltage (Vi) at pin 13. Measured in test circuit Fig.5. AM AGC is measured at fi= MHz;
f

= 1 kHz; m = 0.3. AM distortion is measured at fi= 1 MHz; f

mod

), noise (VoN); reference level 0 dB = 100 mV, and total harmonic distortion (THD)

oAF

= 1 kHz.

mod

Fig.18 Signal and noise (V

), noise (VoN); reference level 0 dB = 100 mV; AM suppression (AMS) and total

oAF

harmonic distortion (THD) as a function of input voltage (V) at pin 1. Measured in test circuit Fig.5 at
fi= 98 MHz; f
f

= 1 kHz, ∆f = 75 kHz for FM.

mod

= 1 kHz; ∆f 22.5 kHz. AM suppression is measured at f

mod

June 1989 20

= 400 Hz, m= 0.3 for AM;

mod

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

PACKAGE OUTLINE

DIP20: plastic dual in-line package; 20 leads (300 mil)

D

seating plane

L

Z

20

pin 1 index

e

b

SOT146-1

M

E

A

2

A

A

1

w M

b

1

11

E

c

(e )

1

M

H

1

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

A 

A 

UNIT

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

max.

mm

OUTLINE
VERSION

SOT146-1

1 2

min.

max.

1.73

1.30

0.068

0.051

IEC JEDEC EIAJ

  SC603

b

b

1

0.53

0.38

0.021

0.015

0.014

0.009

REFERENCES

cD E e M

0.36

0.23

(1) (1)

26.92

26.54

1.060

1.045

June 1989 21

6.40

6.22

0.25

0.24

10

(1)

M

e

L

1

3.60

8.25

3.05

7.80

0.14

0.32

0.12

0.31

EUROPEAN

PROJECTION

H

E

10.0

0.2542.54 7.62

8.3

0.39

0.010.10 0.30

0.33

ISSUE DATE

w

92-11-17
95-05-24

Z

max.

2.04.2 0.51 3.2

0.0780.17 0.020 0.13

Philips Semiconductors Product specification

AM/FM radio receiver circuit TEA5591

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in

“IC Package Databook”

our

Soldering by dipping or by wave

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

DEFINITIONS

(order code 9398 652 90011).

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

Repairing soldered joints

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

stg max

). If the

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

June 1989 22