Datasheet TEA1110AT, TEA1110A Datasheet (Philips)

Page 1
INTEGRATED CIRCUITS
DATA SH EET
TEA1110A
Low voltage versatile telephone transmission circuit with dialler interface
Product specification Supersedes data of 1996 Nov 26 File under Integrated Circuits, IC03
1997 Apr 22
Page 2
Philips Semiconductors Product specification
Low voltage versatile telephone transmission circuit with dialler interface
FEATURES
Low DC line voltage; operates down to 1.6 V (excluding voltage drop over external polarity guard)
Voltage regulator with adjustable DC voltage
Provides a supply for external circuits
Symmetrical high impedance inputs (64 k) for
dynamic, magnetic or piezo-electric microphones
Asymmetrical high impedance input (32 k) for electret microphones
DTMF input with confidence tone MUTE input for pulse or DTMF dialling
Receiving amplifier for dynamic, magnetic or
piezo-electric earpieces
AGC line loss compensation for microphone and earpiece amplifiers.
QUICK REFERENCE DATA
I
= 15 mA; VEE=0V; R
line
=20Ω; AGC pin connected to VEE; Z
SLPE
unless otherwise specified.
APPLICATION
Line powered telephone sets, cordless telephones, fax
GENERAL DESCRIPTION
The TEA1110A is a bipolar integrated circuit that performs all speech and line interface functions required in fully electronic telephone sets. It performs electronic switching between speech and dialling. The IC operates at a line voltage down to 1.6 V DC (with reduced performance) to facilitate the use of telephone sets connected in parallel.
All statements and values refer to all versions unless otherwise specified.
machines, answering machines.
= 600 ; f = 1 kHz; T
line
amb
TEA1110A
=25°C;
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
line
line current operating range normal operation 11 140 mA
with reduced performance 1 11 mA V I
CC
V G
G
LN
CC
vtrx
vtrx
DC line voltage 3.35 3.65 3.95 V internal current consumption VCC= 2.9 V 1.1 1.4 mA supply voltage for peripherals IP=0mA 2.9 V typical voltage gain
microphone amplifier (not adjustable) V receiving amplifier range V
gain control range for microphone and
= 4 mV (RMS) 43.7 dB
MIC
= 4 mV (RMS) 19 33 dB
IR
I
=85mA 5.9 dB
line
receiving amplifiers with respect to I
=15mA
line
G
vtrxm
gain reduction for microphone and
MUTE = LOW 80 dB
receiving amplifiers
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
TEA1110A DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1 TEA1110AT SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
1997 Apr 22 2
Page 3
Philips Semiconductors Product specification
Low voltage versatile telephone transmission circuit with dialler interface
BLOCK DIAGRAM
handbook, full pagewidth
7
DTMF
IR
5
ATT.
V I
V I
V I
GAR
QR MUTE
13 12 6
CURRENT
REFERENCE
TEA1110A
V
14
CC
LN
1
MIC+
MIC
10
9
V
EE
V I
AGC
CIRCUIT
AGC
LOW VOLTAGE
CIRCUIT
TEA1110A(T)
3
2811 SLPE
REG
MGG736
Fig.1 Block diagram.
1997 Apr 22 3
Page 4
Philips Semiconductors Product specification
Low voltage versatile telephone transmission circuit with dialler interface
PINNING
SYMBOL PIN DESCRIPTION
LN 1 positive line terminal SLPE 2 slope (DC resistance) adjustment REG 3 line voltage regulator decoupling n.c. 4 not connected DTMF 5 dual-tone multi-frequency input MUTE 6 mute input to select speech or
dialling mode (active LOW) IR 7 receiving amplifier input AGC 8 automatic gain control/
line loss compensation MIC 9 inverting microphone amplifier input MIC+ 10 non-inverting microphone amplifier
input V
EE
QR 12 receiving amplifier output GAR 13 receive gain adjustment V
CC
11 negative line terminal
14 supply voltage for speech circuit and
peripherals
handbook, halfpage
LN
1
SLPE
2 3
REG
4
n.c.
TEA1110A(T)
5
DTMF
6
MUTE
7
IR
MGG735
Fig.2 Pin configuration.
TEA1110A
14
V
CC
13
GAR
12
QR
11
V
EE
10
MIC+
9
MIC
8
AGC
FUNCTIONAL DESCRIPTION
All data given in this chapter are typical values, except when otherwise specified.
Supply (pins LN, SLPE, V
and REG)
CC
The supply for the TEA1110A and its peripherals is obtained from the telephone line. See Fig.3.
The IC generates a stabilized reference voltage (V between pins LN and SLPE. V
is temperature
ref
ref
)
compensated and can be adjusted by means of an external resistor (RVA). V
equals 3.35 V and can be
ref
increased by connecting RVA between pins REG and SLPE (see Fig.4), or decreased by connecting R
VA
between pins REG and LN. The voltage at pin REG is used by the internal regulator to generate V decoupled by C
, which is connected to VEE. This
REG
and is
ref
capacitor, converted into an equivalent inductance (see Section “Set impedance”), realizes the set impedance conversion from its DC value (R
SLPE
) to its AC value (RCC in the audio-frequency range). The voltage at pin SLPE is proportional to the line current.
The voltage at pin LN is:
V I
V
LN
SLPEIlineICC
refRSLPEISLPE
IP– I∗–=
×+=
Where:
= line current
I
line
ICC= current consumption of the IC IP= supply current for peripheral circuits I* = current consumed between LN and VEE.
The preferred value for R
is 20 . Changing R
SLPE
SLPE
will affect more than the DC characteristics; it also influences the microphone and DTMF gains, the gain control characteristics, the sidetone level and the maximum output swing on the line.
1997 Apr 22 4
Page 5
Philips Semiconductors Product specification
Low voltage versatile telephone transmission circuit with dialler interface
handbook, full pagewidth
R
exch
V
exch
R
line
I
line
I
SLPE
LN 114
I
sh
V
d
2 SLPE
R
SLPE
20
R
CC
619
from pre amp
V
CC
I
I*
CC
C
VCC
100 µF
TEA1110A
311
REG
C
REG
4.7 µF
V
EE
TEA1110A
I
P
peripheral
circuits
MGG737
Fig.3 Supply configuration.
The internal circuitry of the TEA1110A is supplied from pin VCC. This voltage supply is derived from the line voltage by means of a resistor (R decoupled by a capacitor C
VCC
) and must be
CC
. It may also be used to supply peripheral circuits such as dialling or control circuits. The V
voltage depends on the current
CC
consumed by the IC and the peripheral circuits as shown by the formula:
V V
R supply, and I
V
CC
CC0
CCint
CC0RCCintIPIrec
VLNR
×=
CCICC
is the internal equivalent resistance of the voltage
is the current consumed by the output
rec
()×=
(see also Figs 5 and 6).
stage of the earpiece amplifier. The DC line current flowing into the set is determined by
the exchange supply voltage (V resistance (R (R
) and the reference voltage (V
line
), the DC resistance of the telephone line
exch
), the feeding bridge
exch
). With line currents
ref
below 7.5 mA, the internal reference voltage (generating V
) is automatically adjusted to a lower value. This means
ref
that more sets can operate in parallel with DC line voltages (excluding the polarity guard) down to an absolute minimum voltage of 1.6 V. At currents below 7.5 mA, the circuit has limited sending and receiving levels. This is called the low voltage area.
6.0
handbook, halfpage
V
ref
(V)
5.0
4.0
(1)
(2)
3.0
4
10
(1) Influence of RVA on V (2) V
without influence of RVA.
ref
5
10
.
ref
6
10
Fig.4 Reference voltage adjustment by RVA.
RVA ()
MGD176
10
7
1997 Apr 22 5
Page 6
Philips Semiconductors Product specification
Low voltage versatile telephone transmission circuit with dialler interface
Set impedance
In the audio frequency range, the dynamic impedance is mainly determined by the RCC resistor. The equivalent impedance of the circuit is illustrated in Fig.7.
Microphone amplifier (pins MIC+ and MIC)
The TEA1110A has symmetrical microphone inputs. The input impedance between pins MIC+ and MIC is 64 k (2 × 32 k). The voltage gain from pins MIC+/MIC to pin LN is set at 43.7 dB (typ).
Automatic gain control is provided on this amplifier for line loss compensation.
Receiving amplifier (pins IR, GAR and QR)
The receiving amplifier has one input (IR) and one output (QR). The input impedance between pin IR and pin V 20 k. The voltage gain from pin IR to pin QR is set at 33 dB (typ). The gain can be decreased by connecting an external resistor R
between pins GAR and QR; the
GAR
adjustment range is 14 dB. Two external capacitors C (connected between GAR and QR) and C between GAR and VEE) ensure stability. The C
GARS
(connected
GAR
capacitor provides a first-order low-pass filter. The cut-off frequency corresponds to the time constant C
GAR
× (R
GARint
// R
GAR
). R
is the internal resistor
GARint
which sets the gain with a typical value of 125 k. The condition C
GARS
=10×C
must be fulfilled to
GAR
ensure stability. The output voltage of the receiving amplifier is specified for
continuous wave drive. The maximum output swing depends on the DC line voltage, the RCC resistor, the I current consumption of the circuit, the IP current consumption of the peripheral circuits and the load impedance.
EE
GAR
is
CC
TEA1110A
and V currents to be increased (the ratio between I not affected by the resistor). The AGC function is disabled when pin AGC is left open-circuit.
Mute function (pin
The mute function performs the switching between the speech mode and the dialling mode. WhenMUTE is LOW, the DTMF input is enabled and the microphone and receiving amplifiers inputs are disabled. When MUTE is HIGH, the microphone and receiving amplifiers inputs are enabled while the DTMF input is disabled. A pull-up resistor is included at the input.
DTMF amplifier (pin DTMF)
When the DTMF amplifier is enabled, dialling tones may be sent on line. These tones can be heard in the earpiece at a low level (confidence tone).
The TEA1110A has an asymmetrical DTMF input. The input impedance between DTMF and V The voltage gain from pin DTMF to pin LN is 25.3 dB.
The automatic gain control has no effect on the DTMF amplifier.
handbook, halfpage
. This resistor enables the I
EE
MUTE)
2.5
I
P
(mA)
2
1.5
start
and I
line
stop
and I
start
is 20 k.
EE
MBE783
stop
is
Automatic gain control is provided on this amplifier for line loss compensation.
Automatic gain control (pin AGC)
The TEA1110A performs automatic line loss compensation. The automatic gain control varies the gain of the microphone amplifier and the gain of the receiving amplifier in accordance with the DC line current. The control range is 5.9 dB (which corresponds approximately to a line length of 5 km for a 0.5 mm diameter twisted-pair copper cable with a DC resistance of 176 /km and an average attenuation of 1.2 dB/km). The IC can be used with different configurations of feeding bridge (supply voltage and bridge resistance) by connecting an external resistor R
between pins AGC
AGC
1997 Apr 22 6
1
0.5
0
01234
(1) With RVA resistor. (2) Without RVA resistor.
(1)(2)
VCC (V)
Fig.5 Typical current IP available from VCC for
peripheral circuits at I
= 15 mA.
line
Page 7
Philips Semiconductors Product specification
Low voltage versatile telephone transmission circuit with dialler interface
handbook, halfpage
R
CCintVCC
V
CCO
I
rec
V
EE
PERIPHERAL
CIRCUIT
I
MBE792
Fig.6 VCC supply voltage for peripherals.
P
TEA1110A
SIDETONE SUPPRESSION
The TEA1110A anti-sidetone network comprising RCC//Z suppresses the transmitted signal in the earpiece. Maximum compensation is obtained when the following conditions are fulfilled:
R
SLPERast1
k
Z
bal
The scale factor k is chosen to meet the compatibility with a standard capacitor from the E6 or E12 range for Z
In practice, Z the line length. Therefore, the value of Z average line length which gives satisfactory sidetone suppression with short and long lines. The suppression also depends on the accuracy of the match between Z and the impedance of the average line.
, R
, R
line
ast1
× R
R
ast2
=
----------------------------------------------------------------------­R
ast1RSLPE
kZ
×=
line
line
, R
ast2
ast3
CC
R
+()×()
ast3RSLPE
×()
varies considerably with the line type and
, R
SLPE
R
+()×=
ast2Rast3
and Z
bal
should be for an
bal
(see Fig.8 )
bal
.
bal
REG
× R
V
SLPE
LN
SLPE
EE
× RP.
L
EQ
V
R
SLPE
20
ref
R
P
REG V
C
REG
4.7 µF
R
CC
619
CC
C
VCC
100 µF
MBE788
handbook, halfpage
Leq=C RP= internal resistance. RP= 15.5k.
Fig.7 Equivalent impedance between LN and VEE.
The anti-sidetone network for the TEA1110A (as shown in Fig.12) attenuates the receiving signal from the line by 32 dB before it enters the receiving amplifier. The attenuation is almost constant over the whole audio frequency range.
A Wheatstone bridge configuration (see Fig.9) may also be used.
More information on the balancing of an anti-sidetone bridge can be obtained in our publication
Handbook for Wired Telecom Systems, IC03b”
“Applications
, order
number 9397 750 00811.
1997 Apr 22 7
Page 8
Philips Semiconductors Product specification
Low voltage versatile telephone transmission circuit with dialler interface
handbook, full pagewidth
R
R
SLPE
CC
Z
line
V
EE
LN
SLPE
TEA1110A
R
ast1
I
m
R
ast3
IR
Z
R
ast2
Z
bal
ir
MBE787
handbook, full pagewidth
Fig.8 Equivalent circuit of TEA1110A family anti-sidetone bridge.
LN
R
R
CC
SLPE
SLPE
Z
line
V
EE
Z
bal
ast1
IR
Z
ir
R
A
MBE786
I
m
R
Fig.9 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.
1997 Apr 22 8
Page 9
Philips Semiconductors Product specification
Low voltage versatile telephone
TEA1110A
transmission circuit with dialler interface
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
LN
V
n(max)
I
line
P
tot
T
stg
T
amb
HANDLING
This device meets class 2 ESD test requirements [Human Body Model (HBM)], in accordance with
“MIL STD 883C - method 3015”
positive continuous line voltage VEE− 0.4 12 V repetitive line voltage during switch-on or
0.4 13.2 V
V
EE
line interruption maximum voltage on all pins VEE− 0.4 VCC+ 0.4 V line current R
SLPE
=20Ω;
140 mA
see Figs 10 and 11
total power dissipation T
TEA1110A 588 mW
=75°C;
amb
see Figs 10 and 11
TEA1110AT 384 mW storage temperature 40 +125 °C operating ambient temperature 25 +75 °C
.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air;
85 K/W
mounted on epoxy board 40.1 × 19.1 × 1.5 mm (TEA1110A) thermal resistance from junction to ambient in free air;
130 K/W
mounted on epoxy board 40.1 × 19.1 × 1.5 mm (TEA1110AT)
1997 Apr 22 9
Page 10
Philips Semiconductors Product specification
Low voltage versatile telephone transmission circuit with dialler interface
150
handbook, halfpage
I
line
(mA)
130
110
90
70
50
30
212
(1) T
=45°C; P
amb
(2) T
=55°C; P
amb
(3) T
=65°C; P
amb
(4) T
=75°C; P
amb
(1)
(2) (3)
(4)
46810
V
LNVSLPE
= 0.615W.
tot
= 0.538W.
tot
= 0.461W.
tot
= 0.384W.
tot
MBH275
(V)
150
handbook, halfpage
I
line
(mA)
130
110
90
70
50
30
212
(1) T
=35°C; P
amb
(2) T
=45°C; P
amb
(3) T
=55°C; P
amb
(4) T
=65°C; P
amb
(5) T
=75°C; P
amb
TEA1110A
MGD859
(1)
(2)
(3)
(4) (5)
46810
= 1.058W.
tot
= 0.941W.
tot
= 0.823W.
tot
= 0.705W.
tot
= 0.588W.
tot
_
V
V
LN
SLPE
(V)
Fig.10 SO14 Safe operating area (TEA1110AT).
Fig.11 DIP14 Safe operating area (TEA1110A).
1997 Apr 22 10
Page 11
Philips Semiconductors Product specification
Low voltage versatile telephone
TEA1110A
transmission circuit with dialler interface
CHARACTERISTICS
I
= 15 mA; VEE=0V; R
line
unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies (pins V
V
ref
, VCC, SLPE and REG)
LN
stabilized voltage between LN and SLPE
V
V
LN
LN(exR)
DC line voltage I
DC line voltage with an external resistor R
V
LN(T)
DC line voltage variation with temperature referred to 25 °C
I
CC
V R
CC
CCint
internal current consumption VCC= 2.9 V 1.1 1.4 mA supply voltage for peripherals IP=0mA 2.9 V equivalent supply voltage resistance IP= 0.5 mA 550 620
Microphone amplifier (pins MIC+ and MIC−)
input impedance
Z
i
differential between pins MIC+ and MIC
single-ended between pins
MIC+/MIC and V G G
vtx
vtx(f)
voltage gain from MIC+/MIC to LN V gain variation with frequency
referred to 1 kHz
G
vtx(T)
gain variation with temperature
referred to 25 °C CMRR common mode rejection ratio 80 dB V
LN(max)(rms)
maximum sending signal
(RMS value) V
notx
noise output voltage at pin LN; pins
MIC+/MIC shorted through 200
=20Ω; AGC pin connected to VEE; Z
SLPE
VA
EE
= 600 ; f = 1 kHz; T
line
amb
=25°C;
3.1 3.35 3.6 V
=1mA 1.6 V
line
=4mA 2.3 V
I
line
= 15 mA 3.35 3.65 3.95 V
I
line
= 140 mA −−6.9 V
I
line
R
VA(SLPEREG)
T
= 25 to +75 °C −±30 mV
amb
=27kΩ− 4.4 V
64 k
32 k
= 4 mV (RMS) 42.7 43.7 44.7 dB
MIC
f = 300 to 3400 Hz −±0.2 dB
T
= 25 to +75 °C −±0.3 dB
amb
I
= 15 mA; THD = 2% 1.4 1.7 V
line
I
= 4 mA, THD = 10% 0.8 V
line
psophometrically
−−78.5 dBmp
weighted (P53 curve)
Receiving amplifier (pins IR, QR and GAR)
Z
input impedance 20 k
i
G G
vrx
vrx(f)
voltage gain from IR to QR VIR= 4 mV (RMS) 32 33 34 dB
gain variation with frequency
f = 300 to 3400 Hz −±0.2 dB
referred to 1 kHz G
vrx(T)
gain variation with temperature
T
= 25 to +75 °C −±0.3 dB
amb
referred to 25 °C
1997 Apr 22 11
Page 12
Philips Semiconductors Product specification
Low voltage versatile telephone
TEA1110A
transmission circuit with dialler interface
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
vrxr
V
o(rms)
V
norx(rms)
Automatic gain control (pin AGC)
G
vtrx
I
start
I
stop
DTMF amplifier (pin DTMF)
Zi input impedance 20 k G
vdtmf
G
vdtmf(f)
G
vdtmf(T)
G
vct
gain voltage reduction range external resistor
−−14 dB connected between GAR and QR
maximum receiving signal (RMS value)
IP= 0 mA sine wave drive; RL= 150 ;
0.25 V
THD = 2%
= 0 mA sine wave
I
P
0.35 V drive; RL= 450 ; THD = 2%
noise output voltage at pin QR (RMS value)
G
= 33 dB;
vrx
IR open-circuit;
−−87 dBVp
RL= 150 ; psophometrically weighted (P53 curve)
gain control range for microphone
I
=85mA 5.9 dB
line
and receiving amplifiers with respect to I
=15mA
line
highest line current for maximum
23 mA
gain lowest line current for minimum gain 56 mA
voltage gain from DTMF to LN V
= 20 mV (RMS);
DTMF
24.1 25.3 26.5 dB MUTE = LOW
gain variation with frequency
f = 300 to 3400 Hz −±0.2 dB
referred to 1 kHz gain variation with temperature
T
= 25 to +75 °C −±0.4 dB
amb
referred to 25 °C voltage gain from DTMF to QR
(confidence tone)
V
= 20 mV (RMS);
DTMF
RL= 150
−−15 dB
Mute function (pin
V
IL
V
IH
I
MUTE
G
vtrxm
MUTE)
LOW level input voltage VEE− 0.4 − VEE+ 0.3 V HIGH level input voltage VEE+ 1.5 VCC+ 0.4 V input current 1.5 µA gain reduction for microphone and
MUTE = LOW 80 dB
receiving amplifiers
1997 Apr 22 12
Page 13
Philips Semiconductors Product specification
Low voltage versatile telephone transmission circuit with dialler interface
APPLICATION INFORMATION
pd5
R
470 k
pd4
R
470 k
BC558
supply for
peripheral
VCC
RCC619
signal from
C
dial and
control circuits
circuits
100 µF
R
pd6
PD
input
BC547
BF473
TEA1110A
68 k
pd3
R
1 M
MGG738
pd2
R
470 k
ndbook, full pagewidth
ast1
R
130 k
10
protect
R
CC
V
DTMF
QR
C
BAS11
95 V
VDR
TEA1110A(T)
GAR
MIC+
GAR
100 pF
ast2
R
3.92 k
LN
IR
IR
C
4 ×
MUTE
GARS
C
V
MIC
1 nF
EE
C
SLPE REG AGC
ast3
R
390
BZX79C10
REG
SLPE
R
4.7 µF
20
bal
Z
pd1
R
BSN254
470 k
BZX79C10
BC547
 limit
R
3.9
Fig.12 Typical application of the TEA1110A in sets with Pulse Dialling or Flash facilities.
a/b
line
telephone
b/a
1997 Apr 22 13
Page 14
Philips Semiconductors Product specification
Low voltage versatile telephone transmission circuit with dialler interface
PACKAGE OUTLINES
SO14: plastic small outline package; 14 leads; body width 3.9 mm
D
c
y
Z
14
8
TEA1110A
SOT108-1
E
H
E
A
X
v M
A
pin 1 index
1
e
0 2.5 5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
UNIT
mm
inches
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
A
max.
1.75
0.069
A
1
0.25
0.10
0.0098
0.0039
A2A
1.45
1.25
0.057
0.049
0.25
0.01
b
3
p
0.49
0.25
0.36
0.19
0.019
0.0098
0.014
0.0075
(1)E(1)
cD
8.75
8.55
0.35
0.34
7
w M
b
p
scale
eHELLpQZywv θ
4.0
1.27
3.8
0.16
0.050
0.15
6.2
5.8
0.24
0.23
A
2
1.05
0.041
Q
A
1
detail X
1.0
0.7
0.4
0.6
0.028
0.039
0.024
0.016
(A )
L
p
L
0.25
0.01 0.004
A
3
θ
0.25 0.1
0.01
(1)
0.7
0.3
0.028
0.012
o
8
o
0
OUTLINE
VERSION
SOT108-1
IEC JEDEC EIAJ
076E06S MS-012AB
REFERENCES
1997 Apr 22 14
EUROPEAN
PROJECTION
ISSUE DATE
91-08-13 95-01-23
Page 15
Philips Semiconductors Product specification
Low voltage versatile telephone transmission circuit with dialler interface
DIP14: plastic dual in-line package; 14 leads (300 mil)
D
seating plane
L
Z
14
e
b
TEA1110A
SOT27-1
M
E
A
2
A
A
1
w M
b
1
8
c
(e )
1
M
H
pin 1 index
1
0 5 10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
A
A
UNIT
inches
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
max.
mm
OUTLINE VERSION
SOT27-1
1 2
min.
max.
1.73
1.13
0.068
0.044
IEC JEDEC EIAJ
050G04 MO-001AA
b
b
1
0.53
0.38
0.021
0.015
0.36
0.23
0.014
0.009
REFERENCES
cD
scale
(1) (1)
19.50
18.55
0.77
0.73
7
Ee M
6.48
6.20
0.26
0.24
E
(1)
Z
L
e
1
3.60
3.05
0.14
0.12
M
E
8.25
7.80
0.32
0.31
EUROPEAN
PROJECTION
10.0
8.3
0.39
0.33
H
ISSUE DATE
w
0.2542.54 7.62
0.010.10 0.30
92-11-17 95-03-11
max.
2.24.2 0.51 3.2
0.0870.17 0.020 0.13
1997 Apr 22 15
Page 16
Philips Semiconductors Product specification
Low voltage versatile telephone transmission circuit with dialler interface
SOLDERING Introduction
There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used.
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our
“IC Package Databook”
DIP
OLDERING BY DIPPING OR BY WA VE
S The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds.
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.
EPAIRING SOLDERED JOINTS
R Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.
SO
REFLOW SOLDERING Reflow soldering techniques are suitable for all SO
packages.
(order code 9398 652 90011).
). If the
stg max
TEA1110A
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C.
Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.
AVE SOLDERING
W Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used.
The longitudinal axis of the package footprint must be parallel to the solder flow.
The package footprint must incorporate solder thieves at the downstream end.
During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.
Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
EPAIRING SOLDERED JOINTS
R Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.
1997 Apr 22 16
Page 17
Philips Semiconductors Product specification
Low voltage versatile telephone
TEA1110A
transmission circuit with dialler interface
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Apr 22 17
Page 18
Philips Semiconductors Product specification
Low voltage versatile telephone transmission circuit with dialler interface
NOTES
TEA1110A
1997 Apr 22 18
Page 19
Philips Semiconductors Product specification
Low voltage versatile telephone transmission circuit with dialler interface
NOTES
TEA1110A
1997 Apr 22 19
Page 20
Philips Semiconductors – a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +612 98054455, Fax.+61 29805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box213,
Tel. +431 60101, Fax.+43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r.1211, Volodarski Str.6,
220050 MINSK, Tel.+375 172200 733,Fax. +375172 200 773
Belgium: see The Netherlands Brazil: seeSouth America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,
51 JamesBourchier Blvd., 1407SOFIA, Tel. +3592 689211, Fax.+359 2689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1800 2347381
China/Hong Kong: 501 HongKong Industrial Technology Centre, 72 TatChee Avenue, Kowloon Tong, HONG KONG, Tel. +8522319 7888,Fax. +8522319 7700
Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard80, PB 1919, DK-2300COPENHAGEN S,
Tel. +4532 882636, Fax.+45 3157 0044 Finland: Sinikalliontie 3, FIN-02630ESPOO,
Tel. +3589 615800,Fax. +3589 61580920 France: 4 Ruedu Port-aux-Vins, BP317, 92156SURESNES Cedex,
Tel. +331 4099 6161,Fax. +331 40 99 6427 Germany: Hammerbrookstraße 69, D-20097HAMBURG,
Tel. +4940 2353 60,Fax. +4940 23 536 300 Greece: No. 15,25th MarchStreet, GR 17778TAVROS/ATHENS,
Tel. +301 4894339/239, Fax.+30 14814 240
Hungary: seeAustria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400018, Tel. +9122 4938541, Fax.+91 22 4938 722
Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +3531 7640000, Fax.+353 17640 200 Israel: RAPAC Electronics, 7Kehilat SalonikiSt, PO Box 18053,
TEL AVIV61180, Tel. +9723 6450444, Fax.+972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IVNovembre 3,
20124 MILANO, Tel.+39 26752 2531,Fax. +392 6752 2557 Japan: Philips Bldg13-37, Kohnan 2-chome, Minato-ku, TOKYO108,
Tel. +813 37405130, Fax.+81 33740 5077 Korea: Philips House, 260-199Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +822 7091412, Fax.+82 2709 1415 Malaysia: No. 76Jalan Universiti, 46200PETALING JAYA, SELANGOR,
Tel. +60 3750 5214,Fax. +603 7574880 Mexico: 5900 GatewayEast, Suite 200, ELPASO, TEXAS 79905,
Tel. +9-5800 2347381
Middle East: see Italy
Netherlands: Postbus 90050, 5600PB EINDHOVEN, Bldg.VB,
Tel. +3140 2782785, Fax.+31 4027 88399 New Zealand: 2 WagenerPlace, C.P.O. Box1041, AUCKLAND,
Tel. +649 8494160, Fax.+64 9849 7811 Norway: Box 1, Manglerud0612, OSLO,
Tel. +4722 748000, Fax.+47 2274 8341 Philippines: Philips Semiconductors Philippines Inc.,
106 ValeroSt. SalcedoVillage, P.O. Box2108 MCC,MAKATI, Metro MANILA, Tel.+63 2816 6380,Fax. +632 817 3474
Poland: Ul. Lukiska10, PL 04-123WARSZAWA, Tel. +4822 6122831, Fax.+48 22612 2327
Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva35A, 119048 MOSCOW,
Tel. +7095 7556918, Fax.+7 095755 6919 Singapore: Lorong 1, ToaPayoh, SINGAPORE 1231,
Tel. +65350 2538,Fax. +65251 6500
Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 MainRoad Martindale,
2092 JOHANNESBURG, P.O.Box 7430 Johannesburg2000, Tel. +2711 4705911, Fax.+27 11470 5494
South America: Rua doRocio 220, 5thfloor, Suite 51, 04552-903 SãoPaulo, SÃO PAULO- SP, Brazil, Tel. +5511 8212333, Fax.+55 11829 1849
Spain: Balmes 22, 08007BARCELONA, Tel. +343 3016312, Fax.+34 3301 4107
Sweden: Kottbygatan 7, Akalla, S-16485STOCKHOLM, Tel. +468 6322000, Fax.+46 8632 2745
Switzerland: Allmendstrasse 140, CH-8027ZÜRICH, Tel. +411 4882686, Fax.+41 1481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, ChienKuo N.Rd., Sec.1, TAIPEI, Taiwan Tel. +8862 21342865, Fax.+886 22134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-BangnaRoad Prakanong, BANGKOK10260, Tel. +662 7454090, Fax.+66 2398 0793
Turkey: Talatpasa Cad. No. 5, 80640GÜLTEPE/ISTANBUL, Tel. +90212 2792770, Fax.+90 212282 6707
Ukraine: PHILIPS UKRAINE, 4 PatriceLumumba str., Building B, Floor7, 252042 KIEV, Tel.+380 44264 2776, Fax. +38044 2680461
United Kingdom: Philips Semiconductors Ltd., 276 BathRoad, Hayes, MIDDLESEX UB35BX, Tel. +44181 7305000, Fax.+44 181 754 8421
United States: 811 EastArques Avenue, SUNNYVALE, CA94088-3409, Tel. +1800 2347381
Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica5/v, 11000 BEOGRAD,
Tel. +38111 625344, Fax.+38111 635777
For all other countries apply to: Philips Semiconductors, Marketing &Sales Communications, Building BE-p, P.O.Box 218, 5600MD EINDHOVEN, TheNetherlands, Fax.+31 40 27 24825
© Philips Electronics N.V. 1997 SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 417027/1200/02/pp20 Date of release: 1997 Apr 22 Document order number: 9397 75002077
Loading...