Datasheet TDA1560Q Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TDA1560Q

40 W car radio high power amplifier

Product specification
Supersedes data of 1995 Jul 07
File under Integrated Circuits, IC01

1996 May 14

Philips Semiconductors Product specification

40 W car radio high power amplifier TDA1560Q

FEATURES

• Very high output power

• Low power dissipation when used for music signals

• Switches to low output power in the event of excessive

heatsink temperatures

• Requires few external components

GENERAL DESCRIPTION

The TDA1560Q is an integrated Bridge-Tied Load (BTL)
class-H high power amplifier. In a load of 8 Ω, the output
power is 40 W typical at a THD of 10%.

The encapsulation is a 17-lead DIL-bent-SIL plastic power
package. The device is primarily developed for car radio
applications.

• Fixed gain

• Low cross-over distortion

• No switch-on/switch-off plops

• Mode select switch

• Low offset voltage at the output

• Load dump protection

• Short-circuit safe to ground, V

and across load

P

• Protected against electrostatic discharge

• Thermally protected

• Diagnostic facility

• Flexible leads.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

P

supply voltage operating 8.0 14.4 18 V

non-operating −−30 V
load dump protected −−45 V

I

ORM

I

q(tot)

I

sb

G

v

P

o

SVRR supply voltage ripple rejection f

repetitive peak output current −−4A
total quiescent current − 100 160 mA
standby current − 550µA
voltage gain 29 30 31 dB
output power RL=8Ω; THD = 10% − 40 − W

R

=8Ω; THD = 0.5% − 30 − W

L

= 100 Hz to 10 kHz;

i

48 55 − dB

RS=0Ω

V

no

Z

 input impedance 180 300 − kΩ

i

∆V

 DC output offset voltage −−150 mV

O

noise output voltage − 100 300 µV

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

TDA1560Q DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1

1996 May 14 2

Philips Semiconductors Product specification

40 W car radio high power amplifier TDA1560Q

BLOCK DIAGRAM

handbook, full pagewidth

MODE

INP

INP

V

ref

GND

S1

C1

C1

n

13 10

10 k

17

Ω

TEMPERATURE

SENSOR

disable

SUPPLY

C1

p

V

P

9

TDA1560Q

V

P

1

p

150
k

Ω

150
k

2

n

4

16

3

C

DEC

Ω

INPUT AND
FEEDBACK

CIRCUIT

15 k

Ω

voltage

reference

15

disable

C2

POWER

STAGE

POWER

STAGE

V

P

SUPPLY

58

n

C2

C2

LOAD DUMP

TEMPERATURE

AND CURRENT

PROTECTION

12 6

p

GND GND

14

7

11

V

DIAG

OUT1

OUT2

MCD334 - 1

n

p

Fig.1 Block diagram.

1996 May 14 3

Philips Semiconductors Product specification

40 W car radio high power amplifier TDA1560Q

PINNING

SYMBOL PIN DESCRIPTION

INP
INP

p
n

1 positive input

2 negative input
GND 3 ground
V
C2

ref

n

4 reference voltage

5 capacitor C2 negative terminal
GND 6 ground
OUT1
C2

p

V

P

C1

p

OUT2

n

p

7 output 1 (negative)

8 capacitor C2 positive terminal

9 supply voltage

10 capacitor C1 positive terminal

11 output 2 (positive)
GND 12 ground
C1
V
C

n

DIAG

DEC

13 capacitor C1 negative terminal

14 diagnostic voltage output

15 decoupling
MODE 16 mode select switch input
S1 17 class-B/class-H input switch

handbook, halfpage

INP
INP

GND

V

C2

GND

OUT1

C2

C1

OUT2

GND

C1

V

DIAG

C

DEC

MODE

1

p

2

n

3
4

ref

5

n

6
7

n

8

p

9

V

S1

TDA1560Q

P

10

p

11

p

12
13

n

14
15
16
17

MCD329 - 1

Fig.2 Pin configuration.

1996 May 14 4

Philips Semiconductors Product specification

40 W car radio high power amplifier TDA1560Q

FUNCTIONAL DESCRIPTION

The TDA1560Q contains a mono class-H BTL output
power amplifier. At low output power, up to 10 W, the
device operates as a normal BTL amplifier. When a larger
output voltage swing is required, the internal supply
voltage is lifted to approximately twice the external supply
voltage. This extra supply voltage is obtained from the
charge in the external electrolytic capacitors. Due to this
momentarily higher supply voltage, the maximum output
power is 40 W typical at a THD of 10%.

In normal use, when the output is driven with music-type
signals, the high output power is only required for a small
percentage of the time. Assuming a music signal has a
normal (Gaussian) amplitude distribution, the reduction in
dissipation is approximately 50% when compared to a
class-B output amplifier with the same output power.
The heatsink should be designed for use with music
signals.

If the device is continuous sine wave driven, instead of
driven with music signals and at a high output power
(class-H operation), the case temperature can rise above
120 °C with such a practical heatsink. In this event, the
thermal protection disables the high power supply voltage
and limits the output power to 10 W and the maximum
dissipation to 5 W.

The gain of each amplifier is internally fixed at 30 dB. With
the mode select input the device can be switched to the
following modes:

• Low standby current (<50 µA)

• Mute condition, DC adjusted

• On, operation in class-B, limited output power

• On, operation in class-H, high output power.

The open voltage on the class-B/class-H pin is related to
the global temperature of the crystal. By measuring this
voltage, external actions can be taken to reduce an
excessive temperature (e.g. by cutting off low frequencies
or externally switching to class-B). For the relationship
between the crystal temperature and the voltage on this
pin, see Fig.3.

By forcing a high voltage level on the class-B/class-H pin,
thereby simulating a high temperature, the device can be
externally switched to class-B operation. Similarly, by
forcing a low voltage level on the class-B/class-H pin,
thereby simulating a low temperature, the device can be
forced into class-H operation, even if the case temperature
exceeds 120 °C.

The device is fully protected against short-circuiting of the
outputs to ground or V

and across the load, high crystal

P

temperature and electrostatic discharge at all input and
output pins. In the event of a continuing short-circuit to
ground or VP, excessive dissipation is prevented because
the output stages will be switched off. The output stages
will be switched on again within 20 ms after the
short-circuit has been removed.

A diagnostic facility is available at pin 14. In normal
conditions the voltage at this pin will be the supply voltage
(VP). In the event of the following conditions:

• Junction temperature exceeds 150 °C

• Short-circuit of one of the outputs to ground or to V

P

• Load dump; VP>20V.
The voltage level at pin 14 will be at a constant level of

approximately1⁄2VP during fault condition. At a short-circuit
over the load, pin 14 will be at1⁄2VP for approximately
20 ms and VP for approximately 50 µs.

The device can be used as a normal BTL class-AB
amplifier if the electrolytic capacitors C1 and C2 are
omitted; see Fig.6. If the case temperature exceeds
120 °C, the device will switch back from class-H to class-B
operation. The high power supply voltage is then disabled
and the output power is limited to 10 W. By measuring the
voltage on the class-B/class-H pin, the actual crystal
temperature can be detected.

1996 May 14 5

Philips Semiconductors Product specification

40 W car radio high power amplifier TDA1560Q

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

P

I

OSM

I

ORM

V

P(sc)

E

cap

I

17

P

tot

T

stg

T

amb

supply voltage operating − 18 V

non-operating − 30 V

load dump protection; tr≥ 2.5 ms − 45 V
non-repetitive peak output current − 6A
repetitive peak output current − 4A
AC and DC short-circuit safe voltage − 18 V
energy handling capability at outputs VP=0 − 200 mJ
current at pin 17 V17<VP−1 − 5mA
total power dissipation − 60 W
storage temperature −55 +150 °C
operating ambient temperature −40 −°C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

R

th j-case

Heatsink design

There are two parameters that determine the size of the
heatsink. The first is the rating for the case temperature
and the second is the ambient temperature at which the
amplifier must still deliver its full power in the class-H
mode.

thermal resistance from junction to ambient in free air 40 K/W
thermal resistance from junction to case (measured in Fig.6) 3 K/W

XAMPLE 2

E
With disabled class-H mode, an 8 Ω load and driven with

a sine wave signal the maximum power dissipation is
approximately 5 W. At a virtual junction temperature of
150 °C and T
R

th case-h

= 1 K/W the thermal resistance of the heatsink

amb(max)

at 60 °C, R

th vj-case

= 3 K/W and

should be:

E

XAMPLE 1

With an 8 Ω load and driven with a music signal, the
maximum power dissipation is approximately 6.5 W. If the
amplifier is to deliver its full power at ambient temperatures
up to 50 °C the case temperature should not be higher

150 60–

---------------------­5

In this example the size of the heatsink is determined by
the virtual junction temperature.

3 1 14 K/W=––

than120 °C for class-H operation.
R

th case-h

120 50–

----------------------

= 1 K/W, thus the external heatsink should be:

6.5

1.0– 10 K/W=

In this example and with an 8 Ω load, the size of the
heatsink is determined by the rating for the maximum full
power ambient temperature. If the case temperature of the
device exceeds 120 °C then the device switches back to
class-B, see “Example 2”.

1996 May 14 6

Philips Semiconductors Product specification

40 W car radio high power amplifier TDA1560Q

DC CHARACTERISTICS

V

= 14.4 V; RL=8Ω; T

P

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply

V

P

I

q(tot)

V

O

∆V
V

14

O

supply voltage note 1 8.0 14.4 18.0 V
total quiescent current − 100 160 mA
DC output voltage note 2 − 6.5 − V

 DC output offset voltage −−150 mV

diagnostic output voltage note 3 6 − 8V
Mode select switch (see Fig.4)
V

16

I

SW max

I

sb

∆V

V

O

O

switch input voltage level standby condition 0 − 1.2 V

maximum switch current −−20 µA

DC supply current standby condition − 550µA

 DC output offset voltage mute condition −−150 mV

output signal voltage in mute condition V

=25°C and using 4 K/W heatsink; measured in Fig.6; unless otherwise specified.

amb

mute condition 2.6 − 3.5 V
class-B operation 4.5 − 7.0 V
class-H operation 8.5 − V

mute-on step; note 4 −−150 mV

i(max)

=1V;

−−2mV

fi=20Hzto15kHz

V

P

Class-B/class-H operation (see Fig.3 and note 5)
V

17

switch input voltage level class-B operation 2.5 − VP− 1V

class-H operation 0 − 1.0 V

I

SW

T

case

switch current note 6 −−2mA

case temperature for switching to class-B − 120 −°C

Notes

1. The circuit is DC adjusted at V

= 8 to 18 V and AC operating at VP= 8.5 to 18 V.

P

2. The DC output voltage, or the common mode voltage on the loudspeaker terminals with respect to ground, is 6.3 V
at output power up to 8.5 W. At higher output power, the common mode voltage will be higher.

3. The voltage at pin 14 is approximately1⁄2VP in the event of a short-circuit, load dump or temperature protection. Any
circuit connected to pin 14 should have an input resistance of >2 MΩ and an input capacitance of <5 nF.

4. The DC output offset voltage step is the difference in output offset voltage in the mute condition and the on condition.
The absolute value of this voltage step is given as +∆V

o mute

−∆V

< 150 mV.

oon

5. Figure 3 shows the relationship between the global crystal temperature and the open voltage at the
class-B/class-H pin.

6. The maximum voltage on pin 17 is VP− 1 (VP≤ 18 V).

1996 May 14 7

Philips Semiconductors Product specification

40 W car radio high power amplifier TDA1560Q

V

handbook, halfpage

3

V

17

(V)

2

MCD332 - 1

95%
50%

5%

handbook, halfpage

P

8.5
8

V

16

7

(V)

6

5

Class - H

Class - B

1

0

0

40 80 160

120

o

Tvj ( C)

Fig.3 Class-B/class-H pin voltage level.

4

3

2

1

0

Mute

Standby

MCD331 - 1

Fig.4 Switching levels of mode select switch.

1996 May 14 8

Philips Semiconductors Product specification

40 W car radio high power amplifier TDA1560Q

AC CHARACTERISTICS

VP= 14.4 V; RL=8Ω; fi= 1 kHz; T
unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

P

o

output power class-H operation

THD total harmonic distortion P

B power bandwidth THD = 0.5%; P

f

lr

f

hr

G

v

low frequency roll-off −3 dB; note 3 − 40 − Hz
high frequency roll-off −1dB 20 −−kHz
voltage gain 29 30 31 dB

SVRR supply voltage ripple rejection note 4

CMRR common mode rejection ratio note 5 64 −−dB
V

i(max)

V

no

Z

 input impedance note 8 180 300 − kΩ

I

maximum input voltage − 1.2 − V
noise output voltage on; RS=0Ω; note 6 − 100 300 µV

=25°C and using 4 K/W heatsink; measured in Fig.6;

amb

THD = 0.5% 27 30 − W
THD = 10%;

36 39 − W

continuously driven
THD = 10%;

− 40 − W

with burst signals; note 1

class-B operation

THD = 10% 7 10 − W

=1W − 0.05 − %

o

=10W − 0.1 − %

P

o

= −1dB

o

− 40 to 15000 − Hz

with respect to 30 W; note 2

on 48 55 − dB
mute 48 65 − dB
standby 80 −−dB

on; R

=10kΩ; note 6 − 150 −µV

S

mute; notes 6 and 7 − 100 −µV

Notes

1. With a continuous sine wave input signal the output power is approximately 1 W less than driven with a bursted
signal; also depending on the equivalent series resistance of the electrolytic capacitors C1 and C2 (see Fig.6) and
the resistance of the connections between pins 5, 8, 10 and 13 and C1, C2.

2. The power bandwidth is limited by the value of the electrolytic capacitors C1 and C2.

3. Frequency response is externally fixed by the input coupling capacitor.

4. Ripple rejection measured at the output, across R

, with a source impedance of 0 Ω and a frequency between 100 Hz

L

and 10 kHz, and an amplitude of 2 V (p-p). The maximum supply voltage ripple is 2.5 V RMS.

5. The common mode rejection ratio is measured at the output, across RL, with a voltage source (500 mV RMS)
between both short-circuited inputs and signal ground (see Fig.5). Frequencies are between 100 Hz and 10 kHz.

6. Noise output voltage measured in a bandwidth of 20 Hz to 20 kHz.

7. Noise output voltage independent of source impedance.

8. Input impedance without external resistor (Rex).

1996 May 14 9

Philips Semiconductors Product specification

40 W car radio high power amplifier TDA1560Q

+V

handbook, full pagewidth

input ( )

V

P

9

1

output 1 ( )

7

P

input ( )

2

TDA1560Q

3

6,12

Fig.5 Common mode rejection ratio measurements.

Table 1 Values of capacitors C1, C2 and Ck and frequency roll off

fat−3dB

(Hz)

C1, C2

(µF)

10 4700 560
20 3300 270
30 2200 180
40 2200 150
50 1500 100
60 1500 82
70 1000 68

11

output 2 ( )

MCD330 - 1

R

L

ground

C

(nF)

k

1996 May 14 10

Philips Semiconductors Product specification

40 W car radio high power amplifier TDA1560Q

APPLICATION INFORMATION

P

V

µ

2200 F

µ

Ω

0.22 F

1

µ

0.22 F

Ω

1

MCD333 - 3

ground

diagnostic

output

100 nF

9

µ

Ω

0.22 F

2

µ

2200 F

SUPPLY

13 10

disable

Ω

10 k

TDA1560Q

SENSOR

TEMPERATURE

17

S1

14

P

V

output 1 (–)
7

POWER

1

input (+)

k

C

150 nF

input

LOAD DUMP

TEMPERATURE

STAGE

Ω

150

k

output 2 (+)
11

PROTECTION

AND CURRENT

STAGE

POWER

150

k Ω

2

Ω

ex

R = 100 k

input (–)

k

C

150 nF

P

V

CIRCUIT

INPUT AND

FEEDBACK

4
ref

V

Ω

15 k

16

µ

10 F

12 6

58

SUPPLY

disable

voltage

reference

15

3

mode select switch

µ

0.22 F

µ

2200 F

µ

0.22 F

Ω

2

handbook, full pagewidth

Fig.6 Test and application diagram.

are given for a low frequency roll off (−3 dB) of 40Hz; see also Table 1.

ex

and R

k

1996 May 14 11

The values for C

n this application circuit the device is driven on input pin 1.If pin2 is used the output power will be lower.

Philips Semiconductors Product specification

40 W car radio high power amplifier TDA1560Q

24

handbook, halfpage

P

diss

(W)

16

8

0

01020 40

sine wave

pink noise

30

Po (W)

Fig.7 Dissipation as a function of output power.

MLB062

50

handbook, halfpage

P

o

(W)

40

30

20

0

024 8

THD =10%.

50 Hz

25 Hz

6 10

MLB063

C1, C2 (mF)

Fig.8 Output power as a function of lift capacitors.

P

(W)

40

o

30

20

10

10

handbook, full pagewidth

11100 F

8800 Fµ

6600 Fµ

µ

4400 Fµ

2200 Fµ

2

10

Fig.9 Output power as a function of frequency at THD = 1%.

f (Hz)

MLB064

3

10

1996 May 14 12

Philips Semiconductors Product specification

40 W car radio high power amplifier TDA1560Q

P

(W)

40

o

30

20

10

10

handbook, full pagewidth

11100 Fµ

8800 F

6600 Fµ

µ

4400 Fµ

2200 Fµ

2

10

Fig.10 Output power as a function of frequency at THD = 10%.

f (Hz)

MLB065

3

10

handbook, full pagewidth

10

THD

(%)

1

1

10

2

10

010203040

C1, C2 = 2200 F

µ

f = 10 kHz

f = 100 Hz

Fig.11 Total harmonic distortion as a function of output power.

f = 1 kHz

P (W)

o

MLB066

1996 May 14 13

Philips Semiconductors Product specification

40 W car radio high power amplifier TDA1560Q

PACKAGE OUTLINE

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)

non-concave

D

d

j

x

E

h

view B: mounting base side

B

SOT243-1

D

h

A

2

E

A

117

e

Z

DIMENSIONS (mm are the original dimensions)

UNIT A e

mm

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE
VERSION

SOT243-1

A2bpcD

17.0

4.6

4.2

0.75

0.60

15.5

0.48

0.38

IEC JEDEC EIAJ

1

e

(1)

deD

24.0

20.0

23.6

19.6

w M

b

p

(1)

E

h

12.2

10 2.54

11.8

REFERENCES

0 5 10 mm

scale

1

1.27

e

5.08

L

3

L

E

2

h

6

Q

LL3m

3.4

12.4

3.1

11.0

m

2.4

1.6

c

e

2

Qj

2.1

4.3

1.8

EUROPEAN

PROJECTION

v M

v

0.8

x

0.4w0.03

ISSUE DATE

95-03-11
97-12-16

(1)

Z

2.00

1.45

1996 May 14 14

Philips Semiconductors Product specification

40 W car radio high power amplifier TDA1560Q

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Soldering by dipping or by wave

The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

(order code 9398 652 90011).

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

Repairing soldered joints

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

stg max

). If the

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 May 14 15

Philips Semiconductors – a worldwide company

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Tel. [phone], Fax. [phone]

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SELANGOR, Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO,

TEXAS 79905, Tel. [phone], Fax. [phone]

Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]

Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC,
MAKATI, Metro MANILA,
Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,

Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd.,

195-215 Main Road Martindale, 2092 JOHANNESBURG,
P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Rua do Rocio 220 - 5th floor, Suite 51,

CEP: 04552-903-SÃO PAULO-SP, Brazil,
P.O. Box 7383 (01064-970),
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,

Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla. S-16485 STOCKHOLM,

Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. [phone], Fax. [phone]

Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,

Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE,

2A Akademika Koroleva str., Office 165, 252148 KIEV,
Tel.[phone], Fax. [phone]

United Kingdom: Philips Semiconductors LTD.,

276 Bath Road, Hayes, MIDDLESEX UB3 5BX,
Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE,

CA 94088-3409, Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax. [phone]

Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,

Marketing & Sales Communications, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Fax. [phone]

SCDS48 © Philips Electronics N.V. 1996

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517021/1200/04/pp16 Date of release: 1996 May 14
Document order number: 9397 750 00844