Datasheet TDA1555Q Datasheet (Philips)

Page 1
INTEGRATED CIRCUITS
DATA SH EET
TDA1555Q
4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector
Product specification File under Integrated Circuits, IC01
May 1992
Page 2
Philips Semiconductors Product specification
4 x 1 1 W single-ended or 2 x 22 W power
TDA1555Q
amplifier with distortion detector

GENERAL DESCRIPTION

The TDA1555Q is an integrated class-B output amplifier in a 17-lead single-in-line (SIL) plastic power package. The circuit contains 4 x 11 W single-ended or 2 x 22 W bridge amplifiers. The device is primarily developed for car radio applications.

Features

Requires very few external components
Flexibility in use Quad single-ended or stereo BTL
High output power
Low offset voltage at outputs (important for BTL)
Fixed gain
Good ripple rejection
Mute/stand-by switch
Load dump protection
AC and DC short-circuit-safe to ground and V
P

QUICK REFERENCE DATA

Thermally protected
Reverse polarity safe
Capability to handle high energy on outputs (VP = 0 V)
Protected against electrostatic discharge
No switch-on/switch-off plop
Low thermal resistance
Identical inputs (inverting and non-inverting)
Flexible leads
Distortion detector.
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Supply voltage range
operating V Repetitive peak output current I Total quiescent current I Stand-by current I
P ORM tot sb
6.0 14.4 18.0 V
−−4A
80 160 mA
0.1 100 µA
Stereo BTL application
Output power RL = 4 ; THD = 10% P
o
20 22 W Supply voltage ripple rejection RR 48 −−dB Noise output voltage
(RMS value) R
= 0 V
S
no(rms)
Input impedance |Z DC output offset voltage |V
| 253038k
I
O
70 −µV
| −−100 mV
Quad single-ended application
Output power THD = 10%
R
= 4 P
L
= 2 P
R
L
o o
6 W
11 W
Supply voltage ripple rejection RR 48 −−dB Noise output voltage
(RMS value) R
= 0 V
S
Input impedance |Z
no(rms)
| 506075k
I
50 −µV

PACKAGE OUTLINE

17-lead SIL-bent-to-DIL; plastic power (SOT243R); SOT243-1; 1996 July 23.
May 1992 2
Page 3
Philips Semiconductors Product specification
4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector
TDA1555Q
Fig.1 Block diagram.
May 1992 3
Page 4
Philips Semiconductors Product specification
4 x 11 W single-ended or 2 x 22 W power
TDA1555Q
amplifier with distortion detector

PINNING

1 NINV1 non-inverting input 1 9 n.c. not connected 2 INV1 inverting input 1 10 OUT3 output 3 3 GND ground (signal) 11 GND2 power ground 2 (substrate) 4 RR supply voltage ripple rejection 12 OUT4 output 4 5V
P1
positive supply voltage 1 13 V
P2
6 OUT1 output 1 14 M/SS mute/stand-by switch 7 GND1 power ground 1 (substrate) 15 DD distortion detector 8 OUT2 output 2 16 INV2 inverting input 2
17 NINV2 non-inverting input 2

FUNCTIONAL DESCRIPTION

The TDA1555Q contains four identical amplifiers with differential input stages (two inverting and two non-inverting) and can be used for single-ended or bridge applications. The gain of each amplifier is fixed at 20 dB (26 dB in BTL). Special features of this device are:

Mute/stand-by switch

positive supply voltage 2
low stand-by current (< 100 µA)
low mute/stand-by switching current (low cost supply switch)
mute facility

Distortion detector

At onset of clipping of one or more channels the distortion detector (pin 15) becomes active. This information can be used to drive a sound processor or DC volume control to decrease the input signal and so limit distortion.

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)
PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT
Supply voltage
operating V non-operating V
P P
18 V
30 V
load dump protected during 50 ms;
2.5 ms V
t
r
Non-repetitive peak output current I Repetitive peak output current I Storage temperature range T Junction temperature T AC and DC short-circuit-safe voltage V Energy handling capability at outputs V
= 0 V 200 mJ
P
Reverse polarity V Total power dissipation see Fig.2 P
P OSM ORM
stg
j
PSC
PR
tot
45 V
6A
4A
55 + 150 °C
150 °C
18 V
6V
60 W
May 1992 4
Page 5
Philips Semiconductors Product specification
4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector
TDA1555Q
Fig.2 Power derating curve.

DC CHARACTERISTICS

= 14.4 V; T
V
P
= 25 °C; measurements taken using Fig.4; unless otherwise specified
amb
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Supply
Supply voltage range note 1 V Total quiescent current I DC output voltage note 2 V DC output offset voltage |V
Mute/stand-by switch
Switch-on voltage level V
Mute condition
Output signal in mute V
= 1 V (max.);
I
position f = 1 kHz V
DC output offset voltage
(between pins 6 to 8 and 10 to 12) |V
Stand-by condition
DC current in stand-by condition I Switch-on current I
P
tot
O
| −−100 mV
O
ON
V
mute
O
| −−100 mV
O
V
sb
sb sw
6.0 14.4 18.0 V
80 160 mA
6.9 V
8.5 −−V
3.3 6.4 V
−−2mV
0 2V
−−100 µA
12 40 µA
May 1992 5
Page 6
Philips Semiconductors Product specification
4 x 11 W single-ended or 2 x 22 W power
TDA1555Q
amplifier with distortion detector

AC CHARACTERISTICS

= 14.4 V; RL = 4 ; f = 1 kHz; T
V
P
quad single-ended application unless otherwise specified
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Stereo BTL application
Output power THD = 0.5% P
Output power at V
= 13.2 V THD = 0.5% P
P
Total harmonic distortion P Power bandwidth THD = 0.5%
Low frequency roll-off note 3
High frequency roll-off 1 dB f Closed loop voltage gain G Supply voltage ripple rejection note 4
ON RR 48 −−dB mute RR 48 −−dB
stand-by RR 80 −−dB Input impedance |Z Noise output voltage
(RMS value) ON R ON R mute notes 5 and 6 V
Channel separation R Channel unbalance |G Distortion detector I
= 25 °C; measurements taken using Fig.3 for stereo BTL application and Fig.4 for
amb
o
THD = 10% P
THD = 10% P
= 1 W THD 0.1 %
o
= 1 dB
P
o
w.r.t. 15 W B
o o o
w
15 17 W 20 22 W
12 W
17 W
20 to
Hz
15 000
1 dB f
= 0 ; note 5 V
S
= 10 k; note 5 V
S
= 10 kΩα 40 −−dB
S
= 50 µA THD 2 5%
DD
L H
v
| 253038k
i
no(rms) no(rms) no(rms)
| −−1dB
v
45 Hz 20 −−kHz 25 26 27 dB
70 −µV
100 200 µV
60 −µV
May 1992 6
Page 7
Philips Semiconductors Product specification
4 x 11 W single-ended or 2 x 22 W power
TDA1555Q
amplifier with distortion detector
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Quad single-ended application
Output power note 7
45W
5.5 6 W
7.5 8.5 W 10 11 W
45 Hz 20 −−kHz 19 20 21 dB
50 −µV
70 100 µV
50 −µV
Output power at R
= 2 note 7
L
Total harmonic distortion P
THD = 0.5% P THD = 10% P
THD = 0.5% P THD = 10% P
= 1 W THD 0.1 %
o
o o
o o
Low frequency roll-off note 3
3 dB f High frequency roll-off 1 dB f Closed loop voltage gain G
L H
v
Supply voltage ripple rejection note 4
ON RR 48 −−dB mute RR 48 −−dB stand-by RR 80 −−dB
Input impedance |Z
| 506075k
i
Noise output voltage
(RMS value) ON R ON R mute notes 5 and 6 V
Channel separation R Channel unbalance |G Distortion detector I
= 0 ; note 5 V
S
= 10 k; note 5 V
S
= 10 kΩα 40 −−dB
S
= 50 µA THD 2 5%
DD
no(rms) no(rms) no(rms)
| −−1dB
v
Notes to the characteristics
1. The circuit is DC adjusted at VP= 6 V to 18 V and AC operating at VP= 8.5 to 18 V.
2. At 18 V < VP < 30 V the DC output voltage VP/2.
3. Frequency response externally fixed.
4. Ripple rejection measured at the output with a source impedance of 0 (maximum ripple amplitude of 2 V) and a frequency between 100 Hz and 10 kHz.
5. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.
6. Noise output voltage independent of RS (VI = 0 V).
7. Output power is measured directly at the output pins of the IC.
May 1992 7
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Philips Semiconductors Product specification
4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector

APPLICATION INFORMATION

TDA1555Q
Fig.3 Stereo BTL application circuit diagram.
May 1992 8
Page 9
Philips Semiconductors Product specification
4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector
TDA1555Q
Fig.4 Quad single-ended application circuit diagram.
May 1992 9
Page 10
Philips Semiconductors Product specification
4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector

PACKAGE OUTLINE

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
non-concave
D
d
x
E
h
D
h
view B: mounting base side
A
2
TDA1555Q

SOT243-1

117
e
Z
DIMENSIONS (mm are the original dimensions)
UNIT A e
mm
A2bpcD
17.0
4.6
4.2
0.75
0.60
15.5
0.48
0.38
1
e
(1)
deD
24.0
20.0
23.6
19.6
w M
b
p
(1)
E
h
12.2
10 2.54
11.8
0 5 10 mm
B
j
L
3
1.27
scale
1
e
5.08
L
E
2
h
6
Q
LL3m
3.4
12.4
3.1
11.0
c
2.4
1.6
e
4.3
m
E
A
2.1
1.8
v M
(1)
v
Qj
0.8
0.4w0.03
Z
x
2.00
1.45
2
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE VERSION
SOT243-1
IEC JEDEC EIAJ
REFERENCES
May 1992 10
EUROPEAN
PROJECTION
ISSUE DATE
92-11-17 95-03-11
Page 11
Philips Semiconductors Product specification
4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector
SOLDERING Introduction
There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used.
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in
“IC Package Databook”
our
Soldering by dipping or by wave
The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds.
(order code 9398 652 90011).
TDA1555Q
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.
stg max
). If the

DEFINITIONS

Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
May 1992 11
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