Datasheet TDA1519C-N3 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1998 Oct 16
File under Integrated Circuits, IC01

2000 Mar 08

INTEGRATED CIRCUITS

TDA1519C

22 W BTL or 2 × 11 W stereo power
amplifier

2000 Mar 08 2

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

FEATURES

• Requires very fewexternal components for Bridge-Tied
Load (BTL)

• Stereo or BTL application

• High output power

• Low offset voltage at output (important for BTL)

• Fixed gain

• Good ripple rejection

• Mute/standby switch

• Load dump protection

• AC and DC short-circuit-safe to ground and V

P

• Thermally protected

• Reverse polarity safe

• Capability to handle high energy on outputs (VP=0V)

• No switch-on/switch-off plop

• Protected against electrostatic discharge

• Low thermal resistance

• Identical inputs (inverting and non-inverting)

• Pin compatible with TDA1519B (TDA1519C and

TDA1519CSP).

GENERAL DESCRIPTION

The TDA1519C is an integrated class-B dual output
amplifier in a 9-lead plastic single in-line (SIL) power or
20-lead heatsink small outline package.

For the TDA1519CTH (SOT418-2) the heatsink is
positioned on top of the package, thereby allowing an
external heatsink to be mounted on top. The heatsink of
the TDA1519CTD (SOT397-1) is facing the PCB thereby
allowing the heatsink to be soldered on the copper area of
the PCB.

ORDERING INFORMATION

TYPE NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TDA1519C SIL9P plastic single in-line power package; 9 leads SOT131-2
TDA1519CSP SMS9P plastic surface mounted single in-line power package; 9 leads SOT354-1
TDA1519CTH HSOP20 heatsink small outline package; 20 leads; low stand-off SOT418-2
TDA1519CTD HSOP20 heatsink small outline package; 20 leads SOT397-1

2000 Mar 08 3

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

V

P

supply voltage operating 6.0 14.4 17.5 V

non-operating −−30 V
load dump protected −−45 V

I

ORM

repetitive peak output current −−4A

I

q(tot)

total quiescent current − 40 80 mA

I

stb

standby current − 0.1 100 µA

I

sw(on)

switch-on current −−40 µA

Inputs

Z

i

 input impedance BTL 25 −−kΩ

stereo 50 −−kΩ

Stereo application

P

o

output power THD = 10%

R

L

=4Ω−6−W

R

L

=2Ω−11 − W

α

cs

channel separation 40 −−dB

V

n(o)(rms)

noise output voltage (RMS value) − 150 −µV

BTL application

P

o

output power THD = 10%; RL=4Ω− 22 − W

SVRR supply voltage ripple rejection R

S

=0Ω
f = 100 Hz 34 −−dB
f = 1 to 10 kHz 48 −−dB

∆V

OO

 DC output offset voltage −−250 mV

T

j

junction temperature −−150 °C

2000 Mar 08 4

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

BLOCK DIAGRAM

Fig.1 Block diagram.

MGL491

handbook, full pagewidth

60
kΩ

input

reference

voltage

power
ground
(substrate)

+
+

−

5

signal
ground

2 7

9

6

183

Ω

18.1 kΩ

3

TDA1519C

15 kΩ

15 kΩ

VA

VA

C

m

mute switch

power stage

60
kΩ

standby
reference
voltage

mute
reference
voltage

1

NINV

RR

INV

OUT2

M/SS

OUT1

GND1 GND2V

P

4

8

183

Ω

18.1 kΩ

VA

C

m

mute switch

power stage

+

−

mute
switch

standby

switch

× 1

V

P

The pin numbers refer to the TDA1519C and TDA1519CSP.

2000 Mar 08 5

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

PINNING

SYMBOL

PIN

DESCRIPTION

TDA1519C;

TDA1519CSP

TDA1519CTD TDA1519CTH

NINV 1 19 2 non-inverting input
GND1 2 20 1 ground 1 (signal)
RR 3 1 20 supply voltage ripple rejection
OUT1 4 3 18 output 1
GND2 5 5 16 ground 2 (substrate)
OUT2 6 8 13 output 2
V

P

7 10 11 positive supply voltage
M/SS 8 11 10 mute/standby switch input
INV 9 12 9 inverting input
n.c. − 2, 4, 6, 7, 9

and 13 to 18

3 to 8, 12, 14,
15, 17 and 19

not connected

Fig.2 Pin configuration

(SOT131-2 and 354-1).

alfpage

NINV

GND1

RR

OUT1

GND2

OUT2

V

P

M/SS

INV

1
2
3
4
5
6
7
8
9

TDA1519C

TDA1519CSP

MGR561

page

RR

n.c.

OUT1

n.c.

GND2

n.c.
n.c.

OUT2

n.c.

V

P

GND1
NINV
n.c.
n.c.

n.c.
n.c.

n.c.

n.c.
INV
M/SS

1
2
3
4
5
6
7
8
9

10

11

12

20
19
18
17
16
15
14
13

TDA1519CTD

MGL937

Fig.3 Pin configuration

(SOT397-1).

page

GND1

NINV

n.c.
n.c.
n.c.
n.c.
n.c.
n.c.
INV

M/SS

RR
n.c.
OUT1
n.c.

n.c.
n.c.

GND2

OUT2
n.c.
V

P

1
2
3
4
5
6
7
8
9

10

11

12

20
19
18
17
16
15
14
13

TDA1519CTH

MGL936

Fig.4 Pin configuration

(SOT418-2).

2000 Mar 08 6

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

FUNCTIONAL DESCRIPTION

TheTDA1519C contains two identicalamplifiers with differential inputstages. The gain ofeach amplifier is fixedat40 dB.
A special feature of this device is the mute/standby switch which has the following features:

• Low standby current (<100 µA)

• Low mute/standby switching current (low cost supply switch)

• Mute condition.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

P

supply voltage operating − 17.5 V

non-operating − 30 V
load dump protected;

during 50 ms; tr≥ 2.5 ms

− 45 V

V

sc

AC and DC short-circuit-safe voltage − 17.5 V

V

rp

reverse polarity voltage − 6V
energy handling capability at outputs V

P

=0V − 200 mJ

I

OSM

non-repetitive peak output current − 6A

I

ORM

repetitive peak output current − 4A

P

tot

total power dissipation see Fig.5 − 25 W

T

j

junction temperature − 150 °C

T

stg

storage temperature −55 +150 °C

Fig.5 Power derating curve for SIL9P.

handbook, halfpage

−25 0 50 150

30

10

0

20

MGL492

100

P

tot

(W)

T

amb

(°C)

(1)

(2)

(3)

(1) Infinite heatsink.
(2) R

th(c-a)

= 5 K/W.

(3) R

th(c-a)

= 13 K/W.

2000 Mar 08 7

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

THERMAL CHARACTERISTICS

DC CHARACTERISTICS

VP= 14.4 V; T

amb

=25°C; measurements taken using Fig.6; unless otherwise specified.

Notes

1. The circuit is DC adjusted at V

P

= 6 to 17.5 V and AC operating at VP= 8.5 to 17.5 V.

2. At VP= 17.5 to 30 V, the DC output voltage ≤0.5VP.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air

TDA1519C 40 K/W
TDA1519CTH and TDA1519CTD 40 K/W

R

th(j-c)

thermal resistance from junction to case

TDA1519C 3 K/W
TDA1519CTH and TDA1519CTD 3 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

V

P

supply voltage note 1 6.0 14.4 17.5 V

I

q(tot)

total quiescent current − 40 80 mA

V

O

DC output voltage note 2 − 6.95 − V

∆V

OO

 DC output offset voltage −− 250 mV

Mute/standby switch

V

sw(on)

switch-on voltage level 8.5 −−V

Mute condition

V

mute

mute voltage 3.3 − 6.4 V

V

O

output signal in mute position VI= 1 V (max.); f = 20 Hz to 15 kHz −− 20 mV

∆V

OO

 DC output offset voltage −− 250 mV

Standby condition

V

stb

standby voltage standby mode 0 − 2V

I

stb

standby current standby mode −− 100 µA

I

sw(on)

switch-on current − 12 40 µA

2000 Mar 08 8

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

AC CHARACTERISTICS

VP= 14.4 V; RL=4Ω; f = 1 kHz; T

amb

=25°C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Stereo application (see Fig.6)

P

o

output power note 1

THD = 0.5% 4 5 − W
THD = 10% 5.5 6.0 − W

R

L

=2Ω; note 1
THD = 0.5% 7.5 8.5 − W
THD = 10% 10 11 − W

THD total harmonic distortion P

o

=1W − 0.1 − %

f

ro(l)

low frequency roll-off −3 dB; note 2 − 45 − Hz

f

ro(h)

high frequency roll-off −1dB 20 −−kHz

G

v(cl)

closed-loop voltage gain 39 40 41 dB

SVRR supply voltage ripple rejection on; notes 3 and 4 40 −−dB

on; notes 3 and 5 45 −−dB
mute; notes 3 and 6 45 −−dB
standby;

notes 3 and 6

80 −−dB

Z

i

 input impedance 50 60 75 kΩ

V

n(o)(rms)

noise output voltage (RMS value) note 7

on; R

S

=0Ω−150 −µV

on; R

S

=10kΩ− 250 500 µV

mute; note 8 − 120 −µV

α

cs

channel separation RS=10kΩ 40 −−dB

∆G

v(ub)

 channel unbalance − 0.1 1 dB
BTL application (see Fig.7)
P

o

output power note 1

THD = 0.5% 15 17 − W
THD = 10% 20 22 − W

output power at V

P

= 13.2 V note 1

THD = 0.5% − 13 − W
THD = 10% − 17.5 - W

THD total harmonic distortion P

o

=1W − 0.1 − %

B

p

power bandwidth THD = 0.5%;

Po= −1 dB; with
respect to 15 W

− 35 to
15000

− Hz

f

ro(l)

low frequency roll-off −1 dB; note 2 − 45 − Hz

f

ro(h)

high frequency roll-off −1dB 20 −−kHz

G

v(cl)

closed-loop voltage gain 45 46 47 dB

2000 Mar 08 9

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

Notes

1. Output power is measured directly at the output pins of the IC.

2. Frequency response externally fixed.

3. Ripple rejection measured at the output with a source impedance of 0 Ω (maximum ripple amplitude of 2 V).

4. Frequency f = 100 Hz.

5. Frequency between 1 and 10 kHz.

6. Frequency between 100 Hz and 10 kHz.

7. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.

8. Noise output voltage independent of RS (Vi= 0 V).

SVRR supply voltage ripple rejection on; notes 3 and 4 34 −−dB

on; notes 3 and 5 48 −−dB
mute; notes 3 and 6 48 −−dB
standby;

notes 3 and 6

80 −−dB

Z

i

 input impedance 25 30 38 kΩ

V

n(o)(rms)

noise output voltage (RMS value) note 7

on; R

S

=0Ω−200 −µV

on; R

S

=10kΩ− 350 700 µV

mute; note 8 − 180 −µV

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

2000 Mar 08 10

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

APPLICATION INFORMATION

Fig.6 Stereo application diagram (SOT131-2 and SOT354-1).

handbook, full pagewidth

2200

µF

1000

µF

100 µF

100

nF

220 nF

60 kΩ

input

reference

voltage

40 dB

+

−

1

220 nF

60 kΩ

40 dB

−

+

9

546

inverting inputnon-inverting input

internal

1/2 V

P

V

P

power

ground

2

signal

ground

TDA1519C

38

7

standby switch

MGL493

Fig.7 BTL application diagram (SOT131-2 and SOT354-1).

handbook, full pagewidth

2200

µF

100

nF

220 nF

60 kΩ

RL = 4 Ω

input

reference

voltage

40 dB

+

−

1

60 kΩ

40 dB

−

+

9

546

non-inverting input

to pin 9

internal
1/2 V

P

V

P

power

ground

2

signal

ground

TDA1519C

38

7

standby switch

MGL494

to pin 1

2000 Mar 08 11

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

Fig.8 Total quiescent current (I

q(tot)

) as a function of supply voltage (VP).

handbook, halfpage

020

60

30

40

50

MGR539

4 8 12 16

I

q(tot)
(mA)

VP (V)

Fig.9 Output power (Po) as a function of supply voltage (VP) for BTL application at RL= 4 Ω; f = 1 kHz.

handbook, halfpage

020

30

0

10

20

MGR540

4 8 12 16

P

o

(W)

VP (V)

THD = 10%

0.5%

2000 Mar 08 12

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

Fig.10 Total harmonic distortion (THD) as a function of output power (Po) for BTL application at RL=4Ω;

f = 1 kHz.

handbook, halfpage

12

0

10

−1

11010

2

MGR541

4

8

THD

(%)

Po (W)

Fig.11 Total harmonic distortion (THD) as a function of operating frequency (f) for BTL application at RL=4Ω;

Po=1W.

handbook, halfpage

0.6

0

10 10

2

10

3

10

4

MGR542

0.2

0.4

THD

(%)

f (Hz)

2000 Mar 08 13

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

PACKAGE OUTLINES

UNIT A

b

max.

b

p2

cD

(1)

E

(1)

Z

(1)

deD

h

Lj

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

4.6

4.4

1.1

0.75

0.60

0.48

0.38

24.0

23.6

20.0

19.6

10 2.54

12.2

11.8

3.4

3.1

A

max.

1

2.0

E

h

6

2.00

1.45

2.1

1.8

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

17.2

16.5

SOT131-2

95-03-11
99-12-17

0 5 10 mm

scale

Q

0.25w0.03

x

D

L

A

E

c

A

2

Q

w M

b

p

d

D

Z

e

x

h

19

E

h

non-concave

seating plane

1

b

j

SIL9P: plastic single in-line power package; 9 leads

SOT131-2

view B: mounting base side

B

2000 Mar 08 14

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

UNIT A A1A2A3bpcD

(1)

E

(1)

Z

(1)

deD

h

E

h

L

p

L

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

4.9

4.2

0.35

0.05

4.6

4.4

0.25

0.75

0.60

24.0

23.6

0.48

0.38

10

20.0

19.6

12.2

11.8

2.54

3.4

2.8

2.1

1.9

6

3°
0°

2.00

1.45

3.4

3.1

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

7.4

6.6

SOT354-1

0 5 10 mm

scale

Q

j

0.15

wxy θ

D

c

A

1

Q

heatsink

heatsink

θ

A

L

p

(A3)

A

2

0.030.25

w M

b

p

d

D

h

Z

e

x

91

j

E

h

non-concave

98-10-08
99-12-17

SMS9P: plastic surface mounted single in-line power package; 9 leads

SOT354-1

L

E

y

2000 Mar 08 15

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

UNIT

A

4

(1)

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

98-02-25
99-11-12

IEC JEDEC EIAJ

mm

+0.12

−0.02

3.5 0.35

DIMENSIONS (mm are the original dimensions)

Notes

1. Limits per individual lead.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

SOT418-2

0 5 10 mm

scale

HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height

SOT418-2

A

max.

detail X

A

2

3.5

3.2

D

2

1.1

0.9

H

E

14.5

13.9

L

p

1.1

0.8

Q

1.7

1.5

2.5

2.0

v

0.25w0.25

yZ

8°
0°

θ

0.07

x

0.03

D

1

13.0

12.6

E

1

6.2

5.8

E

2

2.9

2.5

bpc

0.32

0.23

e

1.27

D

(2)

16.0

15.8

E

(2)

11.1

10.9

0.53

0.40

A

3

A

4

A

2

(A3)

L

p

θ

A

Q

D

y

x

H

E

E

c

v M

A

X

A

b

p

w M

Z

D

1

D

2

E

2

E

1

e

20

11

1

10

pin 1 index

2000 Mar 08 16

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

UNIT

A

1

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

97-11-03
99-11-12

IEC JEDEC EIAJ

mm

0.3

0.1

3.6 0.35

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

SOT397-1

0 5 10 mm

scale

HSOP20: plastic, heatsink small outline package; 20 leads

SOT397-1

A

max.

D

y

H

E

A1A

4

A

2

b

p

(A3)

E

c

v M

A

X

A

L

p

detail X

θ

A

Q

w M

Z

D

1

D

2

E

2

E

1

e

1

10

20

11

pin 1 index

A

2

3.3

3.0

A

4

0.1
0

D

2

1.1

0.9

H

E

14.5

13.9

L

p

1.1

0.8

Q

1.5

1.4

2.5

2.0

v

0.25w0.25

yZ

8°
0°

θ

0.1

D

1

13.0

12.6

E

1

6.2

5.8

E

2

2.9

2.5

bpc

0.32

0.23

e

1.27

D

(1)

16.0

15.8

E

(1)

11.1

10.9

0.53

0.40

A

3

2000 Mar 08 17

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

SOLDERING
Introduction

Thistextgives a very briefinsighttoa complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when
through-holeandsurfacemountcomponentsare mixed on
one printed-circuit board. However, wave soldering is not
always suitable for surface mount ICs,or for printed-circuit
boards with high population densities. In these situations
reflow soldering is often used.

Through-hole mount packages

SOLDERING BY DIPPING OR BY SOLDER WAVE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg(max)

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the

package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

Surface mount packages

REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
tothe printed-circuit board byscreen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating,soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

WAVE SOLDERING
Conventional single wave soldering is not recommended

forsurfacemount devices (SMDs) or printed-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswith leads on four sides,thefootprintmust
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement andbefore soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

MANUAL SOLDERING
Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

2000 Mar 08 18

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

Suitability of IC packages for wave, reflow and dipping soldering methods

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e)equal toor larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

MOUNTING PACKAGE

SOLDERING METHOD

WAVE REFLOW

(1)

DIPPING

Through-hole mount DBS, DIP, HDIP, SDIP, SIL suitable

(2)

− suitable

Surface mount BGA, LFBGA, SQFP, TFBGA not suitable suitable −

HBCC, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, SMS

not suitable

(3)

suitable −

PLCC

(4)

, SO, SOJ suitable suitable −

LQFP, QFP, TQFP not recommended

(4)(5)

suitable −

SSOP, TSSOP, VSO not recommended

(6)

suitable −

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

2000 Mar 08 19

Philips Semiconductors Product specification

22 W BTL or 2 × 11 W stereo power
amplifier

TDA1519C

NOTES

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

2000

69

Philips Semiconductors – a w orldwide compan y

For all other countries apply to: Philips Semiconductors,

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
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Printed in The Netherlands 753503/02/pp20 Date of release: 2000 Mar 08 Document order number: 9397 750 06633