Datasheet STW12NA60, STH12NA60FI Datasheet (SGS Thomson Microelectronics)

STH12NA60/FI

STW12NA60

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE V

STH 12NA60
STH 12NA60FI
STW12NA60

■ TYPICAL R

■ ± 30V GATE TO SOURCE VOLTAGE RATING

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW INTRINSIC CAPACITANCES

■ GATE GHARGE MINIMIZED

■ REDUCED THRESHOLD VOLTAGE SPREAD

DS(on)

DSS

600 V
600 V
600 V

= 0.44 Ω

R

DS(on)

<0.6Ω
<0.6Ω
<0.6Ω

I

D

12 A

7A

12 A

o

C

DESCRIPTION

This series of POWER MOSFETS represents the
most advanced high voltage technology. The op­timized cell layout coupled with a new proprietary
edge termination concur to give the device low
R

and gate charge, unequalled ruggedness

DS(on)

and superior switching performance.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWERSUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

TO-247

3

2

1

3

2

TO-218 ISOWATT218

1

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

ST H/STW12NA60 STH 12NA60FI

V

V

V

I

DM

P

V

T

(•) Pulsewidth limited bysafe operating area

November 1996

Drain - s ource Voltage (VGS=0) 600 V

DS

Drain- gate Voltage (RGS=20kΩ)600V

DGR

Gate-source Voltage ± 30 V

GS

Drain Current (continuous) at Tc=25oC127A

I

D

Drain Current (continuous) at Tc=100oC7.6 4.4A

I

D

(•) Drain Current (pulsed) 48 48 A

Total Di ssipation at Tc=25oC 190 80 W

tot

Derat ing Factor 1.52 0.64 W/
Ins ulation Withs t and Voltage (DC)  4000 V

ISO

St or a ge Tem perature -65 to 150

stg

Max. Operating Junction Temperature 150

T

j

o
o

o

C

C
C

1/11

STH12NA60/FI - STW12NA60

THERMAL DATA

TO - 218/ TO-247 IS OWATT218

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e Max 0.66 1.56
Thermal Resistance Junction- ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purpose

l

Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng T
Repetitive Avalanc he Energ y

AR

=25oC, ID=IAR,VDD=50V)

j

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive

(Tc= 100oC, pulse width limited by Tjmax, δ <1%)

30

0.1

300

12 A

700 mJ

28 mJ

7.6 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS= 0 600 V

Break d own Volta ge

I

DSS

I

GSS

Zer o Gate Volt age
Drain Current (VGS=0)

Gat e- body Leak age
Current (V

DS

=0)

VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC

= ± 30 V ± 100 nA

V

GS

25

250

ON (∗)

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V
St at ic Drain-s our ce O n

VGS=10V ID=6A 0.44 0.6 Ω

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

12 A

VGS=10V

DYNAMIC

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=6A 8 12 S

VDS=25V f=1MHz VGS= 0 2500

310

85

3250

410
110

µA
µA

pF
pF
pF

2/11

STH12NA60/FI - STW12NA60

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on T im e

t

Rise Time

r

Turn-on C urrent S lope VDD=480V ID=12A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Co ndition s Mi n. Typ. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=300V ID=6A
RG=4.7 Ω VGS=10V

25
35

(see test circuit, figure 3)

190 A/µs
RG=47 Ω VGS=10V
(see test circuit, figure 5)

VDD= 480 V ID=12A VGS=10V 110

15
47

VDD=480V ID=12A
RG=4.7 Ω VGS=10V
(see test circuit, figure 5)

35
20
57

35
50

150 nC

50
30
80

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Co ndition s Mi n. Typ. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

12
48

(pulsed)

V

(∗) Forward On Volt age ISD=12A VGS=0 1.6 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD= 12 A di/dt = 100 A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)

670

12.7

Charge

I

RRM

Reverse Recovery

38

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218

A
A

ns

µC

A

3/11

STH12NA60/FI - STW12NA60

Thermal ImpedeanceFor TO-218 and TO-247

Derating Curve For TO-218 and TO-247

Thermal Impedance For ISOWATT218

Derating Curve For ISOWATT218

Output Characteristics

4/11

Transfer Characteristics

STH12NA60/FI - STW12NA60

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-sourceVoltage Capacitance Variations

Temperature

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs

5/11

STH12NA60/FI - STW12NA60

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode ForwardCharacteristics

6/11

STH12NA60/FI - STW12NA60

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 2: Unclamped Inductive Waveforms

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

7/11

STH12NA60/FI - STW12NA60

TO-247 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.208
A1 2.87 0.113
A2 1.5 2.5 0.059 0.098

b 1 1.4 0.039 0.055
b1 2.25 0.088
b2 3.05 3.43 0.120 0.135

C 0.4 0.8 0.015 0.031
D 20.4 21.18 0.803 0.833

e 5.43 5.47 0.213 0.215

E 15.3 15.95 0.602 0.628

L 15.57 0.613
L1 3.7 4.3 0.145 0.169

Q 5.3 5.84 0.208 0.230

ØP 3.5 3.71 0.137 0.146

mm inch

8/11

C

A

b1

A1

b

e

b2

A2

Q

D

L1

L

ø

E

STH12NA60/FI - STW12NA60

TO-218 (SOT-93) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098

E 0.5 0.78 0.019 0.030

F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598

L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220

R – 12.2 – 0.480

Ø 4 4.1 0.157 0.161

mm inch

E

A

C

L5

D

L6

L3

L2

H

G

Ø

F

R

123

P025A

9/11

STH12NA60/FI - STW12NA60

ISOWATT218 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122

D1 1.88 2.08 0.074 0.081

E 0.45 1 0.017 0.039

F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637

L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817

M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181

L3

N

E

A

D

C

L5

M

H

L2

L6

L1

D1

L4

F

U

G

123

P025C

10/11

STH12NA60/FI - STW12NA60

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such informationnor for any infringement of patents or other rightsof third parties which mayresults fromits use. No
licenseis granted by implication orotherwise under any patentor patent rights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in thispublication are subject to change withoutnotice. Thispublication supersedes andreplacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics products are not authorizedfor use ascriticalcomponents in lifesupportdevicesor systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.

 1996 SGS-THOMSON Microelectronics -Printed in Italy- AllRightsReserved

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