320, tri-level (high-voltage, medium voltage
and ground) power outputs:
– capable of operating at 90V, absolute max.
– capable of sinking or sourcing 2mA
– Hi-Z
■
Logic supply range: 2.5V to 3.3V
■
Slim shape die for COG, COF and TCP
solutions
■
Interface:
– four dual (2-bit) input serial buses:
DBA[1:2], DBB[1:2], DBC[1:2] and DBD[1:2]
operating at shift clock frequency of
10MHz, max.
– three control inputs: shift clock direction
(DIR), chip select (/CS) and data latch
(/DL)
– two “all output” stage control inputs: AOC1
and AOC2
■
Power supplies:
– high-voltage for power outputs: 90V, max.
– logic supply suitable for battery powered
applications: 2.5V, min.
The STV7733 communicates with the host
controller through an 8-bit parallel interface. The
input data bus is organized as four, 2 x 80-bit shift
registers operating in parallel at a maximum clock
frequency of 10MHz.
Logic inputs are LVCMOS compatible.
The STV7733 is available in bumped die form.
Bumped die can be assembled in either a TCP or
COG module.
Figure 1.Block diagram
Description
The STV7733 device is a low-power,
controller/driver IC for dot-matrix displays. Data is
encoded on two bits to select one of four possible
output states: high level, medium level, ground or
high impedance (Hi-Z).
Inputs AOC1 and AOC2 control the all output
stages simultaneously to select one of five
possible configurations: high level, medium level,
ground, Hi-Z or data through.
Except for the data through mode, the
configuration selected by AOC1 and AOC2 is
applied to all outputs at the same time.
May 2007 Rev 11/28
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
HVDDIOutput buffer - high-voltage supply
MVDDIOutput buffer - medium voltage supply
VSSPIOutput buffer - ground level
VDDILogic power supply
VSSLILogic ground
VSSSIChip substrate level
DBA[1:2]IInput data bus, 2-bit serial interface
DBB[1:2]IInput data bus, 2-bit serial interface
DBC[1:2]IInput data bus, 2-bit serial interface
DBD[1:2]IInput data bus, 2-bit serial interface
Below, Table 2 describes the position of the first data sampled by the first rising edge of the
SCLK clock. For the first configuration described in Table 2, that is, with input DIR = “H”,
data on the 2-bit bus DBA is sampled by the first SCLK clock pulse and appears on power
output OUT1. After 80 clock pulses, data on OUT1 will be shifted to OUT317 - on the
high-to-low transition of input /DL. Input /CS is the chip select.
Table 2.Data bus configuration
SCLK pulse number
/CSDIRInputPosition
OUT1OUT2… OUT79 OUT80
Comment
LH
LL
DBA[1:2]
DBB[1:2]
DBC[1:2]
DBD[1:2]
DBA[1:2]
DBB[1:2]
DBC[1:2]
DBD[1:2]
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
01
02
03
04
320
319
318
317
05
06
07
08
316
315
314
313
313
314
315
316
08
07
06
05
317
318
319
320
04
03
02
01
Left/Right shift
Right/Left shift
Note:Data is transferred from the shift register to a latch block and then on to power output stages
on the falling edge of input /DL, see Figure 2.
All output data is stored and held in the latch block on the rising edge of the input /DL, see
Figure 2.
6/28
Page 7
STV7733Power output stage
5 Power output stage
The power output stage is defined by a set of three switches that can select three different
output voltages (HVDD, MVDD or V
the output stage in a high impedance (Hi-Z) mode.
Depending on the configuration of logic inputs AOC1 and AOC2, the power output stage is
configured in either a “data through” mode or a “simultaneous” mode. In the “data through”
mode (for AOC1 = AOC2 = “L”), the power output stage converts the 2-bit encoded data that
was loaded into the latch stage for each column into a high-voltage level that appears on the
output pin. When AOC1 and AOC2 are not both “L”, the power outputs can all operate
simultaneously - going to V
, MVDD or HVDD depending on AOC1 and AOC2 as described
SSP
below in Table 3.
Table 3.Power output truth table
DBn[1]DBn[2]POEAOC1AOC2OUTnComment
XXLXXAll Hi-Z
LLHLLHi-Z
HLHLLV
HHHLLMV
LHHLLHV
XXHHLAll V
XXHLHAll MV
XXHHHAll HV
1. With input POE = “L”, all power outputs are not active, that is, they are all in Hi-Z.
2. Data through mode: each power output depends on the DBn[1:2] value at the falling edge of input /DL.
3. Output simultaneous mode: all power outputs depend on the “H”/”L” input values for AOC1 and AOC2.
). These switches can also be all opened to configure
SSP
SSP
DD
DD
SSP
DD
DD
(1)
(2)
(2)
(2)
(2)
(3)
(3)
(3)
7/28
Page 8
Absolute maximum ratingsSTV7733
6 Absolute maximum ratings
Table 4.Absolute maximum ratings
SymbolParameterValueUnits
V
HV
MV
V
I
POUT
V
OUT
V
ESD
Logic supply range-0.3, +7V
DD
Driver supply range-0.3, +90V
DD
Driver supply range-0.3, +HVdd -10V
DD
Logic input voltage range-0.3, VDD+0.3V
IN
Driver output current ±5mA
Power output voltage range-0.3, +90V
ESD susceptibility, Human Body model
(100pF discharged through 1.5kohms)
2.0kV
TjmaxMaximum junction temperature100°C
TstgStorage temperature range-50, +150°C
8/28
Page 9
STV7733Electrical characteristics
7 Electrical characteristics
VDD = 3V, HVDD = 70V, MVDD = 35V, V
SSP
= 0V, V
SSL
= 0V, V
SSS
= 0V, T
amb
= 25°C,
F = 10MHz, unless otherwise specified.
Table 5.Electrical characteristics
SymbolParameterMin.Typ. Max. Units
Supply
V
I
I
DD1
I
DD2
HV
MV
I
OUT1 to OUT320
V
HPOUTH
V
MPOUTH
V
POUTL
I
POUTH
VDD supply voltage2.533.3V
DD
VDD supply current with no clock, all logic inputs set to either
DD
0V or VDD and all power outputs in Hi-Z
--0.5µA
VDD dynamic supply current @ clock frequency = 5MHz
(data frequency is 2.5MHz)
VDD dynamic supply current @ clock frequency = 100kHz
(data frequency = 50kHz
HVDD supply voltage1580V
DD
MVDD supply voltage
DD
HVDD supply current in steady state--10µA
PP
(1)
(2)
-3-mA
-0.1-mA
1570V
Power output high level (voltage difference versus HVDD)
@ I
HPOUTH
= -0.5mA and HV
= 80V---10V
DD
Power output medium level (voltage difference versus
MVDD)
@ I
MPOUTH
@ I
MPOUTL
= + 0.5mA and MV
= - 0.5mA and MV
DD
DD
= 40V
= 40V
-
-
--+10
Power output low level
@ I
= + 0.5mA--+10V
POUTL
Output current from HVDD, MVDD (see Figure 4)
1) HVDD = 80V, MVDD = 40V
2) HVDD = 60V, MVDD = 30V
-1.42
-0.7
-10
-mA
V
V
mA
I
POUTM
I
POUTL
I
HiZ
Output current from output to MVDD (Figure 4)
1) HVDD = 80V and MVDD = 40V
2) HVDD = 60V and MVDD = 30V
Output current from output to V
@ Vdd=2.5V (Figure 4)
SSP
1) HVDD = 80V and MVDD = 40V
Output current during Hi-Z mode
@ V
= 2.5V, HVDD = 80V and MVDD = 40V
DD
9/28
+1.5
+0.7
mA
mA
+1.5-mA
-10µA
Page 10
Electrical characteristicsSTV7733
Out
Cp
I
POUTH (-)
S1
S3
MV
DD HVDD
V
SSP
S2
Out
Cp
S1
S3
MV
DD HVDD
V
SSP
S2
I
POUTM (+)
Out
Cp
S1
S3
MV
DD HVDD
V
SSP
S2
I
POUTL (+)
a) I
POUTH
b) I
POUTM
c) I
POUTL
Reminder:
•
Current going into the device is a “sinking” current, considered as “positive”
•
Current coming out of the device is a “sourcing” current, considered as “negative”
Table 5.Electrical characteristics (continued)
SymbolParameterMin.Typ. Max. Units
SCLK, DIR, /CS, DBn[1:2], /DL, AOC1, AOC2 and POE
V
V
1. This measurement is performed during device evaluation - it is not tested on all devices.
2. HVDD must be greater than MVDD under all conditions.
High level input voltage (% of VDD)70--%
IH
Low level input voltage (% of VDD)--30%
IL
I
High level input current @ V
IH
I
Low level input current @ V
IL
> 0.7 × V
IH
= 0V--5µA
IL
DD
--5µA
Figure 4.Sink/source current capability test of power outputs
10/28
Page 11
STV7733AC timing requirements
8 AC timing requirements
VDD = 2.5V to 3.3V, T
= - 20°C to +70°C,
amb
input signal edge maximum rise and fall times (tr, tf) = 5ns.
Table 6.AC timing requirements
SymbolParameterMin.Typ. Max. Units
t
SCLK
t
WHSCLK
t
WLSCLK
t
SDAT
t
HDAT
t
SCS
t
HCS
t
HDL
t
t
SDL
Data clock period100--ns
Clock pulse duration at high level40--ns
Clock pulse duration at low level40--ns
Input data set-up time before low-to-high clock transition25--ns
Input data hold-time after low-to-high clock transition25--ns
/CS set-up time before low-to-high clock transition40--ns
/CS hold-time after low-to-high clock transition25--ns
/DL hold-time after low-to-high transition of /CS25--ns
Low level pulse duration25--ns
DL
/DL set-up time before low-to-high transition of /CS475ns
11/28
Page 12
AC Timing characteristicsSTV7733
9 AC Timing characteristics
V
= 3V, HVDD = 70V, MVDD = 35V, V
DD
F = 5MHz, C
= 10pF, unless otherwise specified (V
load
VDD).
Table 7.AC timing characteristics
Symbol ParameterMin.Typ.Max. Units
Delay between /DL transition and change in level of
t
PHL2
t
PLH2
power output @ VDD = 3V (see Figure 5)
1. OUT1 and OUT320
2. OUT160 and OUT161
SSP
= 0V, V
SSL
= 0V, V
ILMAX
SSS
= 0.3 × VDD, V
= 0V, T
-
-
150
500
amb
IHMIN
= 25°C,
= 0.7 ×
250
850nsns
t
PLH3M
t
PLH3H
t
PHL3M
t
PHL3L
t
R_OUTM
t
R_OUTH
t
F_OUTM
t
F_OUTL
Delay between AOC
transitions and change in level of
1,2
power output (see Figure 5)
1. OUT1 and OUT320
2. OUT160 and OUT161
Output transition time for one single power output with
VDD = 3V, MVDD = 35V and HVDD = 70V (see
Figure 5)
Output rise time from V
Output rise time from MVDD to HV
Output fall time from HVDD to MV
Output fall time from MVDD to V
SSP
to MV
DD
DD
DD
SSP
-
-
-
-
-
-
150
500
400
500
800
200
250
850nsns
ns
ns
ns
ns
12/28
Page 13
t
WHSCLK
50%
SCLK
DB (input)
/DL
(Latch on falling edge)
50%
50%
t
WLSCLK
50%
50%
t
SDAT
t
HDAT
50%
Input timing
Output timing
OUT(n
)
90%
50%
t
DL
t
PHL2
t
SCLK
50%
/CS
t
SCS
50%
t
HCS
t
SDL
t
HDL
10%
t
PLH2
3-Steps output timing
50%
5%
55%
45%
95%
t
R_OUTM
t
R_OUTH
5%
55%
45%
95%
t
F_OUTM
50%
t
PLH3M
t
PLH3H
t
PHL3M
t
F_OUTL
t
PHL3L
HV
DD
MV
DD
V
SSP
50%50%
AOC
1,2
OUT(n)
t
WHSCLK
50%
SCLK
DB (input)
/DL
(Latch on falling edge)
50%
50%
t
WLSCLK
50%
50%
t
SDAT
t
HDAT
50%
Input timing
Output timing
OUT(n
)
90%
50%
t
DL
t
PHL2
t
SCLK
50%
/CS
t
SCS
50%
t
HCS
t
SDL
t
HDL
10%
t
PLH2
3-Steps output timing
50%
5%
55%
45%
95%
t
R_OUTM
t
R_OUTH
5%
55%
45%
95%
t
F_OUTM
50%
t
PLH3M
t
PLH3H
t
PHL3M
t
F_OUTL
t
PHL3L
HV
DD
MV
DD
V
SSP
50%50%
AOC
1,2
OUT(n)
STV7733Timing
10 Timing
Figure 5.Timing diagram
13/28
Page 14
Pad dimensions (in microns)/pad positionsSTV7733
11 Pad dimensions (in microns)/pad positions
The reference (x=0, y=0) is the center of the die. Bump pad pitch: 68µm, minimum (on the
power output side of the die).
Table 8.Die size
DimensionUnits
Die size without scribe
X22440µm
Y1550µm
Die size with scribe
X22550µm
Y1660µm
Pad placement coordinate values correspond to the center of each bump pad center.
Number of pads: 404
Table 9.Pad placement and bump dimensions (in microns)
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