Datasheet STW10NK80Z, STP10NK80ZFP, STP10NK80Z Datasheet (SGS Thomson Microelectronics)

STP10NK80Z - STP10NK80ZFP

STW10NK80Z

N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247

Zener-Protected SuperMESH™Power M OSF ET

TYPE V

STP10NK80Z
STP10NK80ZFP
STW10NK80Z

■ TYPICAL R

■ EXTREMELY HIGHdv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSICCAPACITANCES

■ VERY GOOD MANUFACTURING

800 V
800 V
800 V

(on) = 0.78 Ω

DS

DSS

R

DS(on)

< 0.90 Ω
< 0.90 Ω
< 0.90 Ω

I

D

9A
9A
9A

Pw

160 W

40 W

160 W

REPEATIBILITY

DESCRIPTION

The SuperME SH™ series is obtained through an
extreme optimization of ST’s we ll established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis tak­en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple­ments S T full range of high voltage MOSFETs in­cluding revolutionary MDm es h™ products.

TO-220

1

3

2

TO-220FP

TO-247

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES

■ DC-AC CONVERTERS FOR WELDING, UPS

AND MOTOR DRIVE

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP10NK80Z P10NK80Z TO-220 TUBE

STP10NK80ZFP P10NK80ZFP TO-220FP TUBE

STW10NK80Z W10NK80Z TO-247 TUBE

1/11February 2003

STP10NK80Z - STP10NK80ZF P - STW10NK80Z

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP10NK80Z STP10NK80ZFP STW10NK80Z

V

DS

V

DGR

V

GS

I

D

I

D

IDM()

P

TOT

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

() Pulse width limited by safe operating area
(1) I

≤9A, di/dt ≤200A/µs, VDD≤ V

SD

(*) Limited only by maximum temperature allowed

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

800 V

800 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

9 9 (*) 9 A

6 6 (*) 6 A
Drain Current (pulsed) 36 36 (*) 36 A
Total Dissipation at TC= 25°C

160 40 160 W
Derating Factor 1.28 0.32 1.28 W/°C
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4KV

Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature

Storage Temperature

(BR)DSS,Tj≤TJMAX.

-55to150

-55to150

°C
°C

THERMAL DATA

TO-220 TO-220FP TO-247

Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 0.78 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

E

AS

Single Pulse Avalanche Energy
(starting T

max)

j

= 25 °C, ID=IAR,VDD=50V)

j

9A

290 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

2/11

STP10NK80Z - STP10NK 80ZFP - STW10NK80Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OT HERWISE SPECIFIED)

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source
Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=15V,ID= 4.5 A 9.6 S

g

fs

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

C

oss eq.

C

iss

C

oss

C

rss

Capacitance

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

ID=1mA,VGS= 0 800 V

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 100µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 4.5 A 0.78 0.9 Ω

=25V,f=1MHz,VGS= 0 2180

V

DS

205

38

VGS=0V,VDS= 0V to 640V 105 pF

VDD=400V,ID= 4.5 A
RG= 4.7Ω VGS=10V

30
20

(Resistive Load see, Figure 3)

=640V,ID=9A,

V
V

DD
GS

=10V

72

12.5

101

37

µA
µA

pF
pF
pF

ns
ns

nC
nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

Fall Time

VDD= 400 V, ID= 4.5 A
R

=4.7ΩVGS=10V

G

65
17

(Resistive Load see, Figure 3)

t

r(Voff)

t

t

f

c

Fall Time
Cross-over Time

Off-voltage Rise Time

= 640V, ID=9A,

V

DD

RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)

13
10
25

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD= 9 A, VGS=0
I

SD

VDD=45V,Tj= 150°C
(see test circuit, Figure 5)

= 9 A, di/dt = 100A/µs

645

6.4
20

when VDSincreases from 0 to 80%

oss

9

36

1.6 V

ns
ns

ns
ns
ns

A
A

ns

µC

A

3/11

STP10NK80Z - STP10NK80ZF P - STW10NK80Z

Safe Operating Area For TO-220 Thermal Imped ance For TO-220

Thermal Impedance For TO-220F PSafe Operating Area For TO-220FP

4/11

Thermal Impedance For TO-247Safe Operating Area For TO-247

STP10NK80Z - STP10NK 80ZFP - STW10NK80Z

Output Characteristics

Transconductance

Transfer Characteristics

Static Drain-source O n Resistance

Gate Charge vs Gate-so urce Voltage

Capacitance Variations

5/11

STP10NK80Z - STP10NK80ZF P - STW10NK80Z

Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

Maximum Avalanche Energy vs Temperature

Normalized BVDSS vs Temperature

6/11

STP10NK80Z - STP10NK 80ZFP - STW10NK80Z

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

7/11

STP10NK80Z - STP10NK80ZF P - STW10NK80Z

E

P011C

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A

C

D

8/11

L5

Dia.

L7

D1

L6

L2

L9

F1

G1

F

H2

G

F2

L4

STP10NK80Z - STP10NK 80ZFP - STW10NK80Z

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L5

L4

9/11

STP10NK80Z - STP10NK80ZF P - STW10NK80Z

TO-247 MECHANICAL DATA

DIM.

A 4.85 5.15 0.19 0.20
D 2.20 2.60 0.08 0.10
E 0.40 0.80 0.015 0.03

F 1 1.40 0.04 0.05
F1 3 0.11
F2 2 0.07
F3 2 2.40 0.07 0.09
F4 3 3.40 0.11 0.13

G 10.90 0.43
H 15.45 15.75 0.60 0.62

L 19.85 20.15 0.78 0.79
L1 3.70 4.30 0.14 0.17
L2 18.50 0.72
L3 14.20 14.80 0.56 0.58
L4 34.60 1.36
L5 5.50 0.21

M 2 3 0.07 0.11

V

V2

Dia 3.55 3.65 0.14 0.143

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

5º 5º

60º 60º

10/11

STP10NK80Z - STP10NK 80ZFP - STW10NK80Z

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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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11/11