Page 1
VERTICALDEFLECTION BOOSTER
.
POWERAMPLIFIER
.
FLYBACKGENERATOR
.
THERMALPROTECTION
.
OUTPUTCURRENT UP TO 2.6A
.
FLYBACKVOLTAGEUP TO 90V (on Pin 5)
.
SUITABLEFORDC COUPLINGAPPLICATION
DESCRIPTION
Designedfor monitorsand high performance TVs,
the STV9379Avertical deflection booster delivers
flybackvoltagesclose to 90V.
The STV9379A operates with supplies up to 42V
and provides up to 2.6A
the yoke.
TheSTV9379Aisofferedin HEPTAWATTpackage.
output current to drive
PP
PP
HEPTAWATT
(PlasticPackage)
ORDER CODE :
STV9379A
STV9379A
PIN CONNECTIONS
Tab connected to pin 4
August 1998
7
6
5
4
3
2
1
Non-inverting Input
OutputStage Supply
Output
GND or NegativeSupply
FlybackGenerator
SupplyVoltage
Inverting Input
9379A-01.EPS
1/5
Page 2
STV9379A
BLOCKDIAGRAM
OUTPUT
SUPPLY
VOLTAGE
STAGE
SUPPLY
FLYBACK
GENERATOR
236
FLYBACK
GENERATOR
INVERTING INPUT
NON-INVERTING INPUT
1
POWER
AMPLIFIER
5
OUTPUT
7
THERMAL
PROTECTION
STV9379A
4
GROUND or NEGATIVE SUPPLY
ABSOLUTE MAXIMUMRATINGS
Symbol Parameter Value Unit
V
V
V
1,V7
I
I
I
V
ESD
T
oper
T
T
Notes : 1. Versus Pin 4.
Supply Voltage (Pin 2) (see note 1) 50 V
S
Flyback Peak Voltage(Pin 6) (see note 1) 100 V
6
Amplifier Input Voltage(Pins 1-7) (see note 1) -0.3, + V
Maximum Output Peak Current(see notes 2 and 3) 1.8 A
O
Maximum Sink Current (first part of flyback) (t < 1ms) 1.8 A
3
Maximum Source Current (t < 1ms) (see note 2) 1.8 A
3
ESD susceptibility: EIAJNorm (200pF discharged through 0Ω) 300 V
Operating Ambient Temperature - 20, + 75
Storage Temperature - 40, + 150
stg
Junction Temperature +150
j
2. The output current can reach 5A peak for t ≤ 10µs (up to 120Hz).
3. Provided SOAR is respected (see Figures1 and 2).
S
9379A-02.EPS
V
o
C
o
C
o
C
9379A-01.TBL
THERMAL DATA
Symbol Parameter Value Unit
Junction-case Thermal Resistance Max. 3
Temperature for Thermal Shutdown 150
t
Hysteresis on T
t
Recommended Max. Junction Temperature 120
jr
t
10
2/5
R
th(j-c)
T
∆T
T
o
C/W
o
o
o
C
C
C
9379A-02.TBL
Page 3
STV9379A
ELECTRICAL CHARACTERISTICS
(V
= 42V, TA=25oC, unlessotherwise specified)
S
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
I
I
I
I
I
V
∆V
IO
GV VoltageGain 80 dB
V
V
V
D5 - 6
V
D3 - 2
V
V
3SH
Operating Supply Voltage Range VersusPin 4 10 42 V
S
Pin 2 Quiescent Current I3=0,I5= 0 13 20 mA
2
Pin 6 Quiescent Current I3=0,I5=0 5 10 30 mA
6
Max. Operating Peak Output Current 1.3 A
O
Amplifier Bias Current V1= 22V,V7= 23V - 0.15 - 1 µA
1
Amplifier Bias Current V1= 23V,V7= 22V - 0.15 - 1 µA
7
Offset Voltage 7mV
IO
/∆t Offset Drift versus Temperature - 10 µV/oC
Output Saturation Voltage to GND (Pin 4) I5= 1.3A 1 1.5 V
5L
Output Saturation Voltage to Supply (Pin 6) I5= - 1.3A 1.6 2.2 V
5H
Diode Forward Voltage between Pins 5-6 I5= 1.3A 1.3 2 V
Diode Forward Voltage between Pins 3-2 I3= 1.3A 1.3 2 V
Saturation Voltage on Pin 3 I3= 20mA 0.8 1.2 V
3L
Saturation Voltage to Pin 2 (2nd part of flyback) I3= - 1.3A 2.9 3.6 V
9379A-03.TBL
APPLICATIONCIRCUITS
AC COUPLING
V
REF
Ly
<Rd<
(*)
50
µs
R5
Ly
20µs
26
1
7
POWER
AMPLIFIER
STV9379A
C
F
FLYBACK
GENERATOR
THERMAL
PROTECTION
4
R3
R2
+V
3
S
5
R4
Rd (*)
1.5Ω
0.22µF
C
R1
Ly
Yoke
L
9379A-03.EPS
3/5
Page 4
STV9379A
APPLICATIONCIRCUITS (continued)
DC COUPLING
+V
S
C
F
Figure1 :
I(A)
C
10
@T
R5
1
+
V
REF
Vertical
Position
Adjustment
7
STV9379A
(*)
50
Ly
µs
<Rd<
Ly
20µs
OutputTransistors SOA
(for secondary breakdown)
=25°C
case
26
FLYBACK
GENERATOR
POWER
AMPLIFIER
4
-V
EE
3
THERMAL
PROTECTION
Figure2 :
ISB (%)
100
5
Ly
Yoke
R2
Rd (*)
1.5Ω
0.22µF
R1
SecondaryBreakdown Temperature
Derating Curve
(ISB = secondarybreakdowncurrent)
9379A-04.EPS
1
-1
10
t = 1ms
t = 10ms
-2
10
11010
t= 100ms
V(V)
CE
2
9379A-05.EPS
4/5
90
80
70
T
(°C)
case
60
25 50 75 100 125
9379A-06.EPS
Page 5
STV9379A
PACKAGEMECHANICAL DATA :
7 PINS - PLASTICHEPTAWATT
Dimensions Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.8 0.189
C 1.37 0.054
D 2.4 2.8 0.094 0.110
D1 1.2 1.35 0.047 0.053
E 0.35 0.55 0.014 0.022
F 0.6 08 0.024 0.031
F1 0.9 0.035
G 2.41 2.54 2.67 0.095 0.100 0.105
G1 4.91 5.08 5.21 0.193 0.200 0.205
G2 7.49 7.62 7.8 0.295 0.300 0.307
H2 10.4 0.409
H3 10.05 10.4 0.396 0.409
L 16.97 0.668
L1 14.92 0.587
L2 21.54 0.848
L3 22.62 0.891
L5 2.6 3 0.102 0.118
L6 15.1 15.8 0.594 0.622
L7 6 6.6 0.236 0.260
M 2.8 0.110
M1 5.08 0.200
Dia. 3.65 3.85 0.144 0.152
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties whichmay result from
its use. No licence is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previouslysupplied.STMicroelectronicsproducts are notauthorizedforuseascriticalcomponentsinlifesupport devicesorsystems
without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
PM-HEPTV.EPS
HEPTV.TBL
1998 STMicroelectronics - All Rights Reserved
Purchase of I
Rights to use these components in a I
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta- Mexico - Morocco - The Netherlands
2
C Components of STMicroelectronics, conveys a license under the PhilipsI2C Patent.
2
the I
C Standard Specifications as defined by Philips.
STMicroelectronics GROUP OF COMPANIES
Singapore - Spain - Sweden - Switzerland- Taiwan - Thailand - United Kingdom - U.S.A.
2
C system, is granted providedthat the system conforms to
5/5
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