Datasheet STV80NE03L-06 Datasheet (SGS Thomson Microelectronics)

STV80NE03L-06

N - CHANNEL 30V - 0.005Ω - 80A - PowerSO-10

STripFET MOSFET

TYPE V

DSS

R

DS(on)

I

D

ST V80NE03L-06 30 V < 0.006 Ω 80 A

■ TYPICALR

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ LOW GATE CHARGE 100

■ APPLICATIONORIENTED

DS(on)

= 0.005 Ω

o

C

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ SOLENOIDAND RELAY DRIVERS

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ DC-DC& DC-ACCONVERTERS

■ AUTOMOTIVE ENVIRONMENT(INJECTION,

ABS, AIR-BAG, LAMPDRIVERS,Etc. )

10

1

PowerSO-10

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DM

P

dv/ dt Peak Diode Recovery voltage slope 7 V/ ns

T

(•) Pulsewidth limitedby safeoperating area (1)ISD≤ 80 A, di/dt ≤ 300 A/µs, VDD≤ V

May 2000

Dra in- sour c e Volt age (VGS=0) 30 V

DS

Dra in- gat e Voltage (RGS=20kΩ)30V

DGR

Gat e-source Volt age ± 20 V

GS

I

Dra in Cu rr ent ( c ont inuous) at Tc=25oC80A

D

I

Dra in Cu rr ent ( c ont inuous) at Tc=100oC60A

D

(•) Drain Cu rr ent ( p ulsed) 320 A

Tot al Diss ipation at Tc=25oC 150 W

tot

Derating Factor 1 W/

St orage T emperatur e -65 to 175

stg

T

Max. Operating Junction Temperat ur e 175

j

(BR)DSS,Tj≤TJMAX

o

C

o

C

o

C

1/8

STV80NE03L-06

THERMAL DATA

R

thj-case

Rthj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum L ead Tem pe ra t ure F or So ldering Purpos e

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single Pul se Avalanche E nergy

AS

(starting T

=25oC, ID=IAR,VDD=15V)

j

max,δ <1%)

j

1

62.5

0.5

300

80 A

600 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

- 40 to150oC unless otherwisespecified)

(T

J=

OFF

Symbol Parameter Test Condit ions Min. Typ. Max. U nit

V

(BR)DSS

I

DSS

I

GSS

Drain-source
Break dow n Vo lt age

Zero Gate Voltage
Drain Curre nt (V

GS

Gat e- bod y Leakag e
Current (V

DS

=0)

ID=250µAVGS=0

=250µAVGS=0 Tc=25oC

I

D

V

=MaxRating Tc=25oC

DS

=0)

=MaxRating

V

DS

= ± 20 V ± 100 nA

V

GS

27
30

1

50

ON(∗)

Symbol Parameter Test Condit ions Min. Typ. Max. U nit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µ A

V

DS=VGSID

Sta t ic Drain-s our c e On
Resistance

VGS=10V ID=40A

=5V ID=40A

V

GS

V

=10V ID=40A TJ=25oC

GS

=5V ID=40A TJ=25oC

V

GS

On State Drain Current VDS>I

D(on)xRDS(on)max

= 250 µ ATJ=25oC

0.6

1.7

3.0

2.5

0.012

0.018

0.005

0.006

0.009

40 A

VGS=10V

DYNAMIC

V

µA
µ

V

Ω
Ω
Ω
Ω

A

Symbol Parameter Test Condit ions Min. Typ. Max. U nit

g

(∗)Forward

fs

VDS>I

D(on)xRDS(on)maxID

=40 A 20 S

Tr ansc on duc tance

C

C

C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

VDS=25V f=1MHz VGS= 0 6500

1500

500

8700
2000

700

Capacit a nc e

2/8

pF
pF
pF

STV80NE03L-06

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Condit ions Min. Typ. Max. U nit

t

d(on)

t

r

Turn-on Time
Rise Time

VDD=15V ID=40A
R

G

=4.7

Ω

VGS=5V

40

26055350

(see test circuit, figure 3)

Q
Q
Q

Tot al Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=24V ID=80A VGS=5V 95

30
44

130 nC

SWITCHING OFF

Symbol Parameter Test Condit ions Min. Typ. Max. U nit

t

r(Voff)

t

t

Off-voltage Rise Time
Fall T ime

f

Cross-over Tim e

c

VDD=24V ID=80A

=4.7 Ω VGS=5V

R

G

(see test circuit, figure 5)

70
165
250

95
220
340

SOURCEDRAINDIODE

Symbol Parameter Test Condit ions Min. Typ. Max. U nit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area

Source-drain Current

(•)

Source-drain Current

80
320

(pulsed)

(∗)ForwardOnVoltage ISD=80A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 80 A di/dt = 10 0 A/µs

=15V Tj= 150oC

V

DD

(see test circuit, figure 5)

75

0.14
Charge
Reverse Recovery

4

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µ

A

C

SafeOperating Area for ThermalImpedance

3/8

STV80NE03L-06

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STV80NE03L-06

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

NormalizedOn Resistancevs Temperature

5/8

STV80NE03L-06

Fig. 1:

UnclampedInductiveLoad TestCircuit

Fig. 3: SwitchingTimes Test CircuitsFor
ResistiveLoad

Fig. 2:

UnclampedInductive Waveform

Fig. 4: Gate Charge test Circuit

Fig. 5:

Test Circuit For InductiveLoad Switching

And Diode Recovery Times

6/8

PowerSO-10 MECHANICAL DATA

STV80NE03L-06

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 3.35 3.65 0.132 0.144

A1 0.00 0.10 0.000 0.004

B 0.40 0.60 0.016 0.024

c 0.35 0.55 0.013 0.022

D 9.40 9.60 0.370 0.378

D1 7.40 7.60 0.291 0.300

E 9.30 9.50 0.366 0.374
E1 7.20 7.40 0.283 0.291
E2 7.20 7.60 0.283 0.300
E3 6.10 6.35 0.240 0.250
E4 5.90 6.10 0.232 0.240

e 1.27 0.050

F 1.25 1.35 0.049 0.053

H 13.80 14.40 0.543 0.567

h 0.50 0.002

L 1.20 1.80 0.047 0.071

q 1.70 0.067

α 0

o

o

8

==

==

HE

h

A

F

A1

610

51

eB

M

0.25

D

==

D1

==

DETAIL”A”

E2

==

DETAIL”A”

Q

B

0.10 A

E1E3

==

SEATING
PLANE

A

C

α

B

E4

==

SEATING

PLANE

A1

L

==

0068039-C

7/8

STV80NE03L-06

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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
subject to change withoutnotice. Thispublication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components inlife support devices or systems without express written approval ofSTMicroelectronics.

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