STU11NC60
N-CHANNEL 600V - 0.48Ω - 11A Max220
PowerMeshII MOSFET
TYPE V
DSS
R
DS(on)
I
D
STU11NC60 600V < 0.55Ω 11 A
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
(on) = 0.48Ω
DS
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area
figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLIES (UPS)
■ DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
3
2
1
Max220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns
T
stg
T
(•)Pulse width limited by safe operating area
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
600 V
600 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC=25°C
Drain Current (continuos) at TC= 100°C
(●)
Drain Current (pulsed) 44 A
TotalDissipation at TC=25°C
11 A
8A
160 W
Derating Factor 1.28 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
j
(1)ISD≤11A, di/dt ≤100A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX.
1/8June 2000
STU11NC60
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.78 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
=25°C, ID=IAR,VDD=50V)
j
I
= 250 µA, VGS=0
D
= Max Rating
V
DS
=0)
DS
GS
=0)
V
= Max Rating, TC= 125 °C
DS
= ±30V
V
GS
600 V
12 A
400 mJ
1 µA
50 µA
±100 nA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
V
DS=VGS,ID
= 10V, ID=6A
V
GS
V
DS>ID(on)xRDS(on)max,
= 250 µA
VGS=10V
234V
0.48 0.55 Ω
11 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance 275 pF
Reverse Transfer
Capacitance
DS>ID(on)xRDS(on)max,
ID=6A
V
= 25V,f = 1 MHz, VGS=0
DS
13 S
2150 pF
39 pF
2/8
STU11NC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
Q
Q
Q
r
g
gs
gd
Turn-on Delay Time
Rise Time
TotalGate Charge
Gate-Source Charge 13 nC
Gate-Drain Charge 28 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 25 ns
Cross-over Time 30 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 11 A
(2)
Source-drain Current (pulsed) 44 A
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 5.6 µC
Reverse Recovery Current 19 A
V
= 300V, ID=6A
DD
= 4.7Ω,VGS= 10V
R
G
(see test circuit, Figure 3)
V
= 480V, ID=12A,
DD
= 10V, RG=4.7Ω
V
GS
V
= 480V, ID=12A,
DD
= 4.7Ω, VGS=10V
R
G
(see test circuit, Figure 5)
ISD=12A,VGS=0
I
= 12 A, di/dt = 100A/µs,
SD
= 100V, Tj= 150°C
V
DD
(see test circuit, Figure 5)
20 ns
15 ns
65 90 nC
14 ns
1.6 V
590 ns
Safe Operating Area Thermal Impedance
3/8
STU11NC60
Transfer CharacteristicsOutput Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Capacitance Variations
4/8
STU11NC60
Normalized Gate TheresholdVoltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STU11NC60
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/8
STU11NC60
Max220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.2 2.4 0.087 0.094
A2 2.9 3.1 0.114 0.122
b 0.7 0.93 0.027 0.036
b1 1.25 1.4 0.049 0.055
b2 1.2 1.38 0.047 0.054
c 0.45 0.6 0.18 0.023
D 15.9 16.3 0.626 0.641
D1 9 9.35 0.354 0.368
D2 0.8 1.2 0.031 0.047
D3 2.8 3.2 0.110 0.126
e 2.44 2.64 0.096 0.104
E 10.05 10.35 0.396 0.407
L 13.2 13.6 0.520 0.535
L1 3 3.4 0.118 0.133
D3 D1
A
mm inch
D2
A2
C
A1
7/8
D
b1
b2
E
L1
L
b
e
P011R
STU11NC60
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subject to change withoutnotice. Thispublication supersedes and replaces allinformation previously supplied. STMicroelectronics products
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