Datasheet STPIC6C595TTR, STPIC6C595MTR, STPIC6C595M Datasheet (SGS Thomson Microelectronics)

STPIC6C595

POWER LOGIC 8-BIT SHIFT REGISTER

■ LOW R

■ 30mJ AVAILANCHE ENERGY

■ EIGHT 100mA DMOS OUTPUTS

■ 250mA CURRENT LIMIT CAPABILITY

■ 33V OUTPUT CLAMP VOLTAGE

■ DEVICE ARE CASCADABLE

■ LOW POWER CONSUMPTION

DS(on)

:4ΩTYP

DESCRIPTION

This STPIC6C595 is a monolithic,
medium-voltage, low current power 8-bit s hift
register designed for use in systems that require
relatively moderate l oad power such as LEDs. The
device contains a built-in voltage clamp on the
outputs for inductive transient protection. Power
driver application s include relays, solenoids, and
other low-current or medium-voltage loads.
The device c ontains an 8-bit serial-in, parallel-out
shift regist er that feeds an 8-bit D-type s tora ge
register. Data transfe rs through both the shift and
storage register clock (SRCK) and the register
clock (RCK

), respectively. The device transfers
data out the serial output (SER OUT) port on the
rising edge of SRCK. The storage register
transfers data to the output buffer when shift
register c lear (CLR) is high. When CLR

is low, the
input shift register is cleared. When output enable
(G

) is held high, all data in the output buf fer is held
low and all drain output are of f. When G is held
low, data from the storage register is t r ans parent
to the output buffer. When data in the output

SOP TSSOP

buffers is low, the DMOS transi stor outputs are off.
When data is high, the D MOS transistor outputs
have sink-c urrent capability. The SER OUT allows
for cascading of the data from the shift register to
additional devices.
Output are low-side, open-drain DMOS transistors
with output ratings of 33V and 100mA continuous
sink-current capability. Each output provides a
250 mA maximum current limit at T

= 25°C. The

C

current limit decreases as the junction
temperature increases for additional d ev ice
protection. The device also provides up to 1.5KV
of ESD protection when tested using the
human-body model and 200V machine model.
The STPIC6C595 is c harac terized for operation
over the operating case temperature range of

-40°C to 125°C.

ORDERING CODES

Type Package Comments

STPIC6C595M SO-16 (Tube) 50parts per tube / 20tube per box

STPIC6C595MTR SO-16 (Tape & Reel) 2500 parts per reel

STPIC6C595TTR TSSOP16 (Tape & Reel) 2500 parts per reel

1/14August 2002

STPIC6C595

Figure1 : Logic Symbol And Pin Configuration

Figure2 : Input And Output Equivalent Circuits

2/14

STPIC6C595

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DS

I

DS

I
I
I

E

I

AS

P
P
T
T

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is
not implied.

Logic Supply Voltage (See Note 1)

CC

Logic Input Voltage Range

I

Power DMOS Drain to Source Voltage (See Note 2)

DS

Continuous Source to Drain Diode Anode Current
Pulsed Source to Drain Diode Anode Current (See Note 3)
Pulsed Drain Current, Each Output, All Output ON (TC=25°C)

D

Continuous Current, Each Output, All Output ON (TC=25°C)

D

Peak Drain Current Single Output (TC=25°C) (See Note 3)

D

Single Pulse Avalanche Energy (See Figure11 and 12)

AS

Avalanche Current (See Note 4 and figure 17)
Continuous total dissipation (TC≤ 25°C)

d

Continuous total dissipation (TC= 125°C)

d

Operating Virtual Junction Temperature Range

J

Operating Case Temperature Range

C

Storage Temperature Range

stg

Lead Temperature 1.6mm (1/16inch) from case for 10 seconds

L

7V

-0.3 to 7 V
33 V

250 mA
500 mA
250 mA
100 mA
250 mA

30 mJ

200 mA

1087 mW

217 mW

-40 to +150 °C

-40 to +125 °C

-65 to +150 °C
260 °C

THERMAL DATA

Symbol Parameter Value Unit

R

thj-amb

Thermal Resistance Junction-ambient

115 °C/W

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Min. Max. Unit

V

V

V
I

DP

t

t
t
T

Logic Supply Voltage 4.5 5.5 V

CC

High Level Input Voltage 0.85V

IH

Low Level Input Voltage 0 0.15V

IL

CC

Pulse Drain Output Current (TC=25°C, VCC=5V,all outputs ON)
(see note 3, 5 and figure 15)

Set-up Time, SER IN High Before SRCK ↑ (see Figure 6 and 8) 20 ns

su

Hold Time, SER IN High Before G ↑ (see Figure 6, 7, 8) 20 ns

h

Pulse Duration (see Figure 8) 40 ns

W

Operating Case Temperature -40 125 °C

C

V

CC

CC

250 mA

V
V

3/14

STPIC6C595

DC CHARACTERISTICS (VCC=5V, TC= 25°C, unless otherwise specified.)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSX

V

SD

V

OH

V

OL

I

IH

I

IL

I

CC

I

CC(FRQ)

I

N

I

DSX

R

DS(on)

Drain-to-Source breakdown
Voltage

Source-to-Drain Diode
Forward Voltage

High Level Output Voltage
SER OUT

Low Level Output Voltage
SER OUT

High Level Input Current VCC= 5.5V VI=V
Low Level Input Current VCC= 5.5V VI=0 -1 µA
Logic Supply Current VCC= 5.5V All outputs OFF or ON 20 200 µA
Logic Supply Current at

Frequency

Nominal Current V

Off-State Drain Current VDS= 30V VCC= 5.5V 0.3 5 µA

Static Drain Source ON
StateResistance (See Note
5, 6 and figg. 14, 16)

ID= 1mA 33 37 V

IF= 100 mA 0.85 1.2 V

IOH=-20µAVCC= 4.5V 4.4 4.49 V

=-4mA VCC= 4.5V 4 4.2 V

I

OH

IOH=20µAVCC= 4.5V 0.005 0.1 V

= 4 mA VCC= 4.5V 0.3 0.5 V

I

OH

1 µA

f

= 5MHz CL= 30pF

SRCK

CC

0.2 2 mA

All outputs OFF
(See Figg. 6, 18 and 19)

= 0.5V IN=I

DS(on)

D

90 mA

TC=85°C (See Note 5, 6, 7)

= 30V VCC=5.5V or 0V

V

DS

T

=125°C

C

0.6 8 µA

ID= 50mA VCC= 4.5V 4.5 6 Ω

= 50mA VCC= 4.5V

I

D

T

=125°C

C

= 100mA VCC= 4.5V 4.5 6 Ω

I

D

6.5 9 Ω

SWITCHING CHARACTERISTICS (V

=5V, TC= 25°C, unless otherwise specified.)

CC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

PHL

Propagation Dealy Time,
High to Low Level Output

CL=30pF ID= 75mA
(See Figg. 4, 5, 6,7, 20)

80 ns

from G

t

PLH

Propagation Dealy Time,
Low to High Level Output

130 ns

from G
Rise Time, Drain Output 60 ns

t

r

Fall Time, Drain Output 50 ns

t

f

t

Note 1: All Voltage value are with respect to GND
Note 2: Each power DMOS source is internally connected to GND
Note 3: Pulse duration ≤ 100µs and duty cycle ≤ 2%
Note 4: Drain Supply Voltage = 15V, starting junction temperature (T
Note 5: Technique should limit T
Note 6: These parameters are measured with voltage sensing contacts separate from the current-carrying contacts.
Note 7: Nominal Current is defined for a consistent comparison between devices from different sources. It is the current that produces a

voltagedropof0.5VatT

propagation Delay Time 20 ns

pd

Reverse Recovery Current

t

a

Rise Time
Reverse Recovery Time 115 ns

t

rr

to 10°C maximum

J-TC

=85°C.

C

IF= 100mA di/dt = 10A/µs
(See Note 5, 6 and Fig. 9 and 10)

) = 25°C. L = 1.5H and IAS= 200mA (See Fig. 11 and 12)

JS

39 ns

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Figure3 : Logic Diagram

STPIC6C595

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STPIC6C595

Figure4 : Typical Operation Mode Test Circuits

Figure5 : Typical Operation Mode Waveforms

NOTE:
A) The word generator has the following characteristics: t

includes probe and jig capacitance.

B) C

L

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≤ 10ns, tf≤ 10ns, tW= 300ns, pulse repetition rate (PRR) = 5KHz, ZO=50Ω

r

Figure6 : Typical Operation Mode Test Circuits

Figure7 : Switching Time Waveform

STPIC6C595

Figure8 : Input Setup And Hold Waveform

NOTE:
A) The word generator has the following characteristics: t

includes probe and jig capacitance.

B) C

L

≤ 10ns, tf≤ 10ns, tW= 300ns, pulse repetition rate (PRR) = 5KHz, ZO=50Ω

r

7/14

STPIC6C595

Figure9 : Reverse Recovery Current Test Circuits

Figure10 : So urce Drain Diode Waveform

NOTE:
A) The V
and t3=3µs
B) The Drain terminal under test is connected to the TPK test point. All other terminals are connected together and connected to theTPA test
point.
C) I

amplitude and RGare adjusted for di/dt = 10A/µs. A VGGdouble-pulse trainn is used to set IF= 0.1A. where t1=10µs, t2=7µs

GG

= maximum recovery current.

RM

8/14

Figure11 : Single Pulse Avalanc he En ergy Tes t Circuits

Figure12 : Single Pulse Avalanc he En ergy Wa ve form

STPIC6C595

NOTE:
A) The word generator has the following characteristics: tr≤ 10ns, tf≤ 10ns, ZO=50Ω
B) Input pulse duration, tW is increased until peak current I

= 200 mA. Energy test level is defined as EAS=(IASxV

AS

(BR)DSXxtAV

)/2 = 30mJ.

9/14

STPIC6C595

TYPICAL PERFORMANCE CHARACTERISTICS (unless otherwise specified Tj=25°C)
Figure13 : Max Continuous Drain Current vs

Number of Outpu ts Conducting Simultaneously

Figure14 : Static Drain-Source ON-State
Resistance vs Drai n Current

Figure16 : Static Drain-Source ON-State
Resistance vs Logic Supply Voltage

Figure17 : Peak Avalanche Current vs Time
Duration of Avalanche

Figure15 : Maximum Peak Drain Current vs
Number of Outputs Conducting Simultaneou sly

10/14

Figure18 : Supply C urrent vs Frequenc y

STPIC6C595

Figure19 : Supply C urrent vs Suppl y Voltage

Figure20 : Switching Time vs Case Temperature

Figure21 : Normalized Junction to Ambi ent

Thermal Resistance

11/14

STPIC6C595

SO-16 MECHANICAL DATA

DIM.

A 1.75 0.068
a1 0.1 0.2 0.003 0.007
a2 1.65 0.064

b 0.35 0.46 0.013 0.018
b1 0.19 0.25 0.007 0.010

C 0.5 0.019
c1 45˚ (typ.)

D 9.8 10 0.385 0.393

E 5.8 6.2 0.228 0.244

e 1.27 0.050
e3 8.89 0.350

F 3.8 4.0 0. 149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.62 0.024

S ˚ (max.)

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

8

12/14

PO13H

STPIC6C595

TSSOP16 MECHANICAL DATA

mm. inch

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 1.2 0.047

A1 0.05 0.15 0.002 0.004 0.006

A2 0.8 1 1.05 0.031 0.039 0.041

b 0.19 0.30 0.007 0.012

c 0.09 0.20 0.004 0.0089

D 4.9 5 5.1 0.193 0.197 0.201

E 6.2 6.4 6.6 0.244 0.252 0.260

E1 4.3 4.4 4.48 0.169 0.173 0.176

e 0.65 BSC 0.0256 BSC

K0˚ 8˚0˚ 8˚

L 0.45 0.60 0.75 0.018 0.024 0.030

A2

A

A1

b

e

c

K

L

E

D

E1

PIN 1 IDENTIFICATION

1

0080338D

13/14

STPIC6C595

o

o

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