Page 1
N - CHANNEL ENHANCEMENT MODE
TYPE V
STP3NB60
ST P12NB30FP
■ TYPICALR
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGEMINIMIZED
DS(on)
DSS
300 V
300 V
=0.34 Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
R
DS(on)
<0.40Ω
<0.40Ω
I
D
12A
6.5 A
STP12NB30
STP12NB30FP
PowerMESH MOSFET
PRELIMINARY DATA
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGHSPEEDSWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY(UPS)
■ DC-DC& DC-AC CONVERTERSFOR
TELECOM,INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
ST P12 NB30 ST P12 NB30FP
V
V
V
I
DM
P
dv/dt(
V
T
Drain-source Voltage (VGS=0) 300 V
DS
DGR Drain- gate Voltage (R
Gat e- source Vo lt age ± 30 V
GS
I
Drain Cur rent (c on t inuous) a t Tc=25oC126.5A
D
Drain Cur rent (c on t inuous) a t Tc=100oC7.54A
I
D
=20kΩ)
GS
300 V
(•) Dra in Curr ent (pulsed) 48 48 A
Tot al Dissip at ion at Tc=25oC12535W
tot
Derat in g F ac tor 1 0.28 W/
1) Peak Diode Rec overy voltage slope 5.5 5.5 V/ns
Ins ulation Withsta nd Voltage ( D C) 2000 V
ISO
Sto rage Tempe rature -65 to 150
stg
T
Max. Operating Ju nc tion T emperat ure 150
j
o
C
o
C
o
C
January 1998
1/6
Page 2
STP12NB30/FP
THERMAL DATA
TO-220 TO220-FP
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Value Uni t
I
AR
E
Ther mal Resist ance Junctio n-case M ax 1 3.57
Ther mal Resist ance Junctio n-ambient Max
Ther mal Resist ance Case-sink T y p
Maximum Lead Tem per a t u re F o r Soldering Purpos e
l
Avalanche Cur rent, Repet it i v e or Not-Re petitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
62.5
0.5
300
12 A
250 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
300 V
Breakdown V oltage
I
DSS
I
GSS
Zer o Gat e V o lt age
Drain Current (V
GS
Gat e-body Leaka ge
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125oC
DS
= ± 30 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
345V
Voltage
R
DS(on)
Stati c D rain-source On
VGS=10V ID=6A 0.34 0.4 Ω
Resistance
I
D(on)
On State Drain Curre nt VDS>I
D(on)xRDS(on)max
12 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansconductanc e
C
C
C
Input Capac i t an c e
iss
Out put C apa c itance
oss
Reverse Transf er
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=6A 3 S
VDS=25V f=1MHz VGS= 0 1000
200
25
1400
270
35
µA
µA
pF
pF
pF
2/6
Page 3
STP12NB30/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
t
d(on)
Turn-on Time
r
Rise Tim e
t
VDD=150V ID=6A
=4.7 Ω VGS=10V
R
G
20
10
28
14
ns
ns
Q
Q
Q
Total Gate Charge
g
Gat e-Sour ce Cha rge
gs
Gate-Drain Charge
gd
VDD=240 V ID=12A VGS=10V 29
11
12
40 nC
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Of f - voltage Rise Time
Fall Time
f
Cross-ov er Time
c
VDD=240V ID=12 A
=4.7 Ω VGS=10V
R
G
10
10
20
14
14
28
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area
Source-drain Curre nt
(•)
Source-drain Curre nt
12
48
(pulsed)
(∗) For ward On Volt age ISD=12A VGS=0 1.5 V
Reverse Recov er y
rr
Time
Reverse Recov er y
rr
= 1 2 A di/ dt = 100 A/µs
I
SD
=100V Tj=150oC
V
DD
250
2
Charge
Reverse Recov er y
16
Current
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/6
Page 4
STP12NB30/FP
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
F
H2
G
C
D1
L2
Dia.
L5
L7
L6
L9
P011C
4/6
Page 5
TO-220FP MECHANICAL DATA
STP12NB30/FP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
5/6
Page 6
STP12NB30/FP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subjectto change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics productsare not authorizedfor use as critical componentsin life support devicesor systems without express
written approval ofSGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
6/6
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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