Datasheet STP11NM80, STB11NM80 Datasheet (SGS Thomson Microelectronics)

STP11NM80 - STB11NM80

STF11NM80 - STW11NM80

N-CHANNEL 800V - 0.35Ω - 11A TO-220/FP/D2PAK/TO-247

MDmesh™Power MOSFET

TARGET DATA

TYPE V

STP11NM80
STF11NM80
STB11NM80
STW11NM80



TYPICAL RDS(on) = 0.35 Ω



LOW GATE INPUT RESISTANCE



LOW INPUT CAPACITANCE AND GATE

800 V
800 V
800 V
800 V

DSS

R

DS(on)Rds(on)*Qg

< 0.40 Ω
< 0.40 Ω
< 0.40 Ω
< 0.40 Ω

14 Ω*nC
14 Ω*nC
14 Ω*nC
14 Ω*nC

I

D

11 A
11 A
11 A
11 A

CHARGE



BEST R

* Qg IN THE INDUSTRY

ds(on)

DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro­cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.

3

2

1

D2PAK

TO-220

3

2

1

TO-220FP

TO-247

INTERNAL SCHE MATIC DIAGRAM

3

1

3

2

1

APPLICATIONS

The 800 V MDmes h™ family is very su itable for sin­gle switch applications in particular for Flyback and
Forward converter topologies.

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP11NM80 P11NM80 TO-220 TUBE
STF11NM80 F11NM80 TO-220FP TUBE

STB11NM80T4 B11NM80

STW11NM80 W11NM80 TO-247 TUBE

June 2003

2

PAK

D

TAPE & REEL

1/10

STP11NM80 - ST B 11NM 80 - S TF11NM 80 - STW11NM 80

ABSOLUTE M AXIMUM RATINGS

Symbol Parameter Value Unit

TO-220/D

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 44 44 (*) A
Total Dissipation at TC= 25°C

I

V

DM

P

V

DGR

V

I
I

TOT

DS

GS

D
D

Derating Factor 1.2 0.28 W/°C

dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns

T

stg

T

j

Storage Temperature
Max. Operating Junction Temperature

()Pulse width limited by safe operating area

<11A, di/dt<400A/µs, VDD<V

(1)I

SD

(*) Limited only by the Maximum Temperature Allowed

(BR)DSS,TJ<TJMAX

2

PAK

TO-247

TO-220FP

800 V
800 V

11 11 (*) A

4.7 4.7 (*) A

150 35 W

–65 to 150 °C

THERMAL DATA

2

TO-247

PAK

TO-220FP

TO-220/D

Rthj-case Thermal Resistance Junction-case Max 0.83 3.6 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose 300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID= 2.5A, VDD=50V)

j

ELECTRICAL CHARACT ERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

TBD A

TBD mJ

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

Resistance

ID= 250 µA, VGS= 0 800 V

V

= Max Rating

DS

=0)

VDS= Max Rating, TC=125°C
V

= ±30V 100 nA

GS

V

DS=VGS,ID

= 250 µA 3

4

VGS=10V,ID= 5.5 A 0.35 0.40 Ω

10 µA

100 µA

5V

2/10

STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80

ELECTRICAL CHARACT ERISTICS (CO NTINUED)

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS>I

g

fs

D(on)xRDS(on)max,

ID= 7.5 A

V

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 1000 pF
Reverse Transfer

=30V,f=1MHz,VGS=0

DS

Capacitance

R

G

Gate Input Resistance f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV
Open Drain

(1)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

Turn-on Delay Time

t

r

g
gs
gd

Rise Time 14 ns
Total Gate Charge

Gate-Source Charge 10 nC
Gate-Drain Charge 24 nC

=400V,ID= 5.5 A

DD

R

= 4.7 Ω ,VGS= 10V

G

(see test circuit, Figure 3)
V

=400V,ID=11A,

DD

VGS=10V

5S

1900 pF

18 pF

2 Ω

27 ns

40 58 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

r(Voff)

t

f

t

c

Off-voltage Rise Time
Fall Time 11 ns
Cross-over Time 21 ns

= 640 V, ID= 11A,

DD

=4.7Ω , VGS=10V

R

G

(see test circuit, Figure 5)

6ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 11 A

(2)

Source-drain Current (pulsed) 44 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 6.5 µC

ISD=11A,VGS=0
I

= 11 A, di/dt = 100A/µs,

SD

VDD=100V,Tj=150°C
(see test circuit, Figure 5)

496 ns

Reverse Recovery Current 26 A

1.5 V

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STP11NM80 - ST B 11NM 80 - S TF11NM 80 - STW11NM 80

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

4/10

STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

5/10

STP11NM80 - ST B 11NM 80 - S TF11NM 80 - STW11NM 80

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

6/10

L3

L6

L7

F1

F

G1

H

F2

123

L4

L2

L5

G

STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80

D2PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126

R 0.4 0.015
V2 0º 8º

3

7/10

1

STP11NM80 - ST B 11NM 80 - S TF11NM 80 - STW11NM 80

TO-247 MECHANICAL DATA

DIM.

A 4.85 5.15 0.19 0.20

A1 2.20 2.60 0.086 0.102

b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134

c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e5.45 0.214
L 14.20 14.80 0.560 0.582

L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216

S5.50 0.216

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

8/10

STP11NM80 - STB11NM80 - STF11NM80 - STW11NM80

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10. 5 10.7 0.413 0.421
B0 15.7 15 .9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0. 062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sal es type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

9/10

STP11NM80 - ST B 11NM 80 - S TF11NM 80 - STW11NM 80

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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
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