Datasheet STP11NM60FD, STB11NM60FD, STP11NM60FDFP, STB11NM60FD-1 Datasheet (ST)

Page 1
查询STB11NM60FD-1供应商
STP11NM60FD- STB11NM60FD
STP11NM60FDFP - STB11NM60FD-1
N-CHANNEL 600V-0.40-11ATO-220/TO-220FP/I2PAK/D2PAK
FDmesh™Power MOS FET (with FAST DIODE)
TYPE V
STP11NM60FD STP11NM60FDFP STB11NM60FD STB11NM60FD-1
TYPICAL RDS(on) = 0.40
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AN D GATE
DSS
600 V 600 V 600 V 600 V
R
DS(on)
<0.45 <0.45 <0.45 <0.45
I
D
11 A 11 A 11 A 11 A
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS
DESCRIPTION
The F Dmesh™ associates all advantages of re­duced on-resistance and fast switching with an in­trinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in par­ticular ZVS phase-shift converters.
APPLICATIONS
ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT
3
2
TO-220
D2PAK
1
3
1
TO-220FP
2
I
INTERNAL SCHEMATIC DIAGRAM
PAK
3
2
1
3
2
1
ORDER CODES
PART NUMBER MARKING PACKAGE PACKAGING
STP11NM60FD P11NM60FD TO-220 TUBE STP11NM60FDFP P11NM60FDFP TO-220FP TUBE STB11NM60FDT4 B11NM60FD
STB11NM60FD-1 B11NM60FD
2
PAK
D
2
I
PAK
TAPE & REEL
TUBE
1/13February 2004
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STP11NM60FD - STP11N M 60FDF P - STB11NM60FD - ST B 11NM60FD -1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
IDM()
P
TOT
Drain-source Voltage (VGS=0) Drain-gate Voltage (RGS=20kΩ) Gate- source Voltage ±30 V Drain Current (continuos) at TC=25°C Drain Current (continuos) at TC=100°C Drain Current (pulsed) 44 44 (*) A Total Dissipation at TC=25°C Derating Factor 0.88 0.28 W/°C
1) Peak Diode Recovery voltage slope 20 V/ns
dv/dt (
V
ISO
T
stg
T
j
()Pulse width limited by safe operating area
<11A, di/dt<400A/µs, VDD<V
(1)I
SD
(*)Limited only by maximum temperature allowed
Insulation Winthstand Voltage (DC) -- 2500 V Storage Temperature Max. Operating Junction Temperature
(BR)DSS,TJ<TJMAX
STP11NM60FD
STB11NM60FD
STB11NM60FD-1
11 11 (*) A
77(*)A
160 35 W
STP11NM60FDFP
600 V 600 V
–65 to 150 °C
THERMAL DATA
TO-220/I
2
PAK
2
PAK
D
Rthj-case Thermal Resistance Junction-case Max 0.78 3.57 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
TO-220FP
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T
max)
j
Single Pulse Avalanche Energy (starting T
=25°C, ID=IAR,VDD=35V)
j
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
5.5 A
350 mJ
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current (V
GS
=0)
Gate-body Leakage Current (V
DS
=0) Gate Threshold Voltage Static Drain-source On
Resistance
ID= 250 µA, VGS= 0 600 V
V
=MaxRating
DS
V
=MaxRating,TC= 125 °C
DS
V
=±30V ±100 nA
GS
V
DS=VGS,ID
= 250 µA
34
A
100 µA
5V
VGS=10V,ID= 5.5 A 0.40 0.45
2/13
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STP11NM60FD - ST P11N M 60F D FP - STB11NM60FD - STB11NM60FD-1
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
D(on)xRDS(on)max,
ID=5.5A
C
iss
C
oss
C
rss
Input Capacitance Output Capacitance 208 pF Reverse Transfer
V
=25V,f=1MHz,VGS=0
DS
Capacitance
C
oss eq.
(2) Equivalent Output
VGS=0V,VDS= 0V to 400V 100 pF
Capacitance
R
G
Gate Input Resistance f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV Open Drain
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. C
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time 16 ns Total Gate Charge
Gate-Source Charge 7.8 nC Gate-Drain Charge 13 nC
V
=250V,ID=5.5A
DD
RG=4.7Ω VGS=10V (see test circuit, Figure 3)
V
=400V,ID=11A,
DD
VGS=10V
5.2 S
1000 pF
28 pF
3
when VDSincreases from 0 to 80%
oss
20 ns
28 40 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
Off-voltage Rise Time
t
f c
FallTime 15 ns Cross-over Time 24 ns
V
=400V,ID=11A,
DD
R
=4.7Ω, VGS= 10V
G
(seetest circuit,Figure5)
10 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 11 A
(2)
Source-drain Current (pulsed) 44 A ForwardOnVoltage Reverse Recovery Time Reverse Recovery Charge 1.1 µC
ISD=11A,VGS=0
= 11A, di/dt = 100A/µs,
I
SD
VDD=50V (see test circuit, Figure 5)
190 ns
Reverse Recovery Current 14.5 A
1.5 V
3/13
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STP11NM60FD - STP11N M 60FDF P - STB11NM60FD - ST B 11NM60FD -1
Safe Operating for TO-220/I2PAK/D2PAK Safe Operating Area for TO-220FP
Thermal Impedance for TO-220FPThermal Impedance for TO-220/I2PAK
4/13
Transfer CharacteristicsOutput Characteristics
Page 5
STP11NM60FD - ST P11N M 60F D FP - STB11NM60FD - STB11NM60FD-1
Static Drain-source On ResistanceTransconductance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized On Resistance vs TemperatureNormalized Gate Theresho ld Voltage vs Temp.
5/13
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STP11NM60FD - STP11N M 60FDF P - STB11NM60FD - ST B 11NM60FD -1
Source-drain Diode Forward Characteristics
6/13
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STP11NM60FD - ST P11N M 60F D FP - STB11NM60FD - STB11NM60FD-1
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Induc tive Load Switching And Di ode Recovery T imes
Fig. 4: Gate Charge test Circuit
7/13
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STP11NM60FD - STP11N M 60FDF P - STB11NM60FD - ST B 11NM60FD -1
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
8/13
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STP11NM60FD - ST P11N M 60F D FP - STB11NM60FD - STB11NM60FD-1
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
F1
F
G1
H
F2
123
L4
L2
L5
G
9/13
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STP11NM60FD - STP11N M 60FDF P - STB11NM60FD - ST B 11NM60FD -1
TO-262 (I2PAK) MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
A1 2.40 2.72 0.094 0.107
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.49 0.70 0.019 0.027
c2 1.23 1.32 0.048 0.052
D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
E 10 10.40 0.393 0.410
L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
10/13
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STP11NM60FD - ST P11N M 60F D FP - STB11NM60FD - STB11NM60FD-1
D2PAK MECHANICAL DATA
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E10 10.40.393 E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068
mm. inch
M 2.4 3.2 0.094 0.126 R0.4 0.015
V2 0º
3
11/13
1
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STP11NM60FD - STP11N M 60FDF P - STB11NM60FD - ST B 11NM60FD -1
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421 B0 15.7 15 .9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0. 476 P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0. 956
* on sales ty pe
12/13
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
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STP11NM60FD - ST P11N M 60F D FP - STB11NM60FD - STB11NM60FD-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of u se of suc h informat ion n or for any in fring ement of paten ts or oth er ri ghts of th ird part ies whic h may resul t from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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